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    Semiconductor integrated circuit device having a dummy conductive film and method of manufacturing the same
    1.
    发明授权
    Semiconductor integrated circuit device having a dummy conductive film and method of manufacturing the same 有权
    具有虚拟导电膜的半导体集成电路器件及其制造方法

    公开(公告)号：US07001808B2

    公开(公告)日：2006-02-21

    申请号：US10786334

    申请日：2004-02-26

    申请人： Keisuke Tsukamoto ,  Yoshihiro Ikeda ,  Tsutomu Okazaki ,  Daisuke Okada ,  Hiroshi Yanagita

    发明人： Keisuke Tsukamoto ,  Yoshihiro Ikeda ,  Tsutomu Okazaki ,  Daisuke Okada ,  Hiroshi Yanagita

    IPC分类号： H01L31/336

    CPC分类号： H01L27/11526 ,  H01L27/105 ,  H01L27/11543

    摘要： Defects in element forming regions on which memory cells of a non-volatile memory are formed are to be diminished to reduce leakage current. End portions of element forming regions with non-volatile memory cells formed thereon are extended a length D by utilizing the region which underlies a dummy conductive film, whereby a stress induced from an insulating film which surrounds the element forming regions is concentrated on the extended region. As a result, defects do not extend up to the regions where memory cells are formed and therefore it is possible to reduce leakage current in the memory cells.

    摘要翻译： 在其上形成非易失性存储器的存储单元的元件形成区域中的缺陷将被减小以减少泄漏电流。 在其上形成有非易失性存储单元的元件形成区域的端部通过利用虚设导电膜下面的区域而延伸长度D，由此围绕元件形成区域的绝缘膜引起的应力集中在延伸区域上 。 结果，缺陷不延伸到形成存储单元的区域，因此可以减少存储单元中的漏电流。

    Semiconductor device with reduced memory leakage current
    2.
    发明授权
    Semiconductor device with reduced memory leakage current 有权
    具有减少内存泄漏电流的半导体器件

    公开(公告)号：US07095074B2

    公开(公告)日：2006-08-22

    申请号：US10196166

    申请日：2002-07-17

    申请人： Keisuke Tsukamoto ,  Yoshihiro Ikeda ,  Tsutomu Okazaki ,  Daisuke Okada ,  Hiroshi Yanagita

    发明人： Keisuke Tsukamoto ,  Yoshihiro Ikeda ,  Tsutomu Okazaki ,  Daisuke Okada ,  Hiroshi Yanagita

    IPC分类号： H01L29/76 ,  H01L29/788

    CPC分类号： H01L27/11526 ,  H01L27/105 ,  H01L27/11543

    摘要： Defects in element forming regions on which memory cells of a non-volatile memory are formed are to be diminished to reduce leakage current. End portions of element forming regions with non-volatile memory cells formed thereon are extended a length D by utilizing the region which underlies a dummy conductive film, whereby a stress induced from an insulating film which surrounds the element forming regions is concentrated on the extended region. As a result, defects do not extend up to the regions where memory cells are formed and therefore it is possible to reduce leakage current in the memory cells.

    摘要翻译： 在其上形成非易失性存储器的存储单元的元件形成区域中的缺陷将被减小以减少泄漏电流。 在其上形成有非易失性存储单元的元件形成区域的端部通过利用虚设导电膜下面的区域而延伸长度D，由此围绕元件形成区域的绝缘膜引起的应力集中在延伸区域上 。 结果，缺陷不延伸到形成存储单元的区域，因此可以减少存储单元中的漏电流。

    Method of manufacturing a semiconductor device having trenches for isolation and capacitor formation trenches
    4.
    发明授权
    Method of manufacturing a semiconductor device having trenches for isolation and capacitor formation trenches 有权
    制造具有用于隔离沟槽和电容器形成沟槽的半导体器件的方法

    公开(公告)号：US07015090B2

    公开(公告)日：2006-03-21

    申请号：US10408353

    申请日：2003-04-08

    申请人： Tsutomu Okazaki ,  Daisuke Okada ,  Yoshihiro Ikeda ,  Keisuke Tsukamoto ,  Tatsuya Fukumura ,  Shoji Shukuri ,  Keiichi Haraguchi ,  Koji Kishi

    发明人： Tsutomu Okazaki ,  Daisuke Okada ,  Yoshihiro Ikeda ,  Keisuke Tsukamoto ,  Tatsuya Fukumura ,  Shoji Shukuri ,  Keiichi Haraguchi ,  Koji Kishi

    IPC分类号： H01L21/8248

    CPC分类号： H01L27/11536 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L29/66181 ,  H01L29/7833

    摘要： At least not less than one capacitor formation trench providing an uneven surface is formed on the surface of a capacitor formation region. Thus, the surface area of a capacitor is increased, which enables improvement of the capacitance of the capacitor per unit area. Further, by forming the capacitor formation trench and an element formation trench that are formed in the surface of the semiconductor substrate by the same step, it is possible to simplify the manufacturing process. Whereas, a dielectric film of the capacitor in the capacitor formation region and a high-voltage gate insulating film in a MISFET formation region are formed by the same step; alternatively, the dielectric film of the capacitor in the capacitor formation region and a memory gate interlayer film between a polysilicon layer and a polysilicon layer in the memory cell formation region are formed by the same step.

    摘要翻译： 在电容器形成区域的表面上形成至少不少于一个形成凹凸表面的电容器形成沟槽。 因此，电容器的表面积增加，这能够提高每单位面积的电容器的电容。 此外，通过形成通过相同的步骤形成在半导体衬底的表面中的电容器形成沟槽和元件形成沟槽，可以简化制造工艺。 而电容器形成区域中的电容器的电介质膜和MISFET形成区域中的高压栅极绝缘膜通过相同的步骤形成; 或者，电容器形成区域中的电容器的电介质膜和存储单元形成区域中的多晶硅层和多晶硅层之间的存储器栅极层间膜通过相同的步骤形成。

    Method of manufacturing a semiconductor device having trenches for isolation and capacitor
    5.
    发明申请
    Method of manufacturing a semiconductor device having trenches for isolation and capacitor 审中-公开
    制造具有用于隔离和电容器的沟槽的半导体器件的方法

    公开(公告)号：US20060033141A1

    公开(公告)日：2006-02-16

    申请号：US11248309

    申请日：2005-10-13

    申请人： Tsutomu Okazaki ,  Daisuke Okada ,  Yoshihiro Ikeda ,  Keisuke Tsukamoto ,  Tatsuya Fukumura ,  Shoji Shukuri ,  Keiichi Haraguchi ,  Koji Kishi

    发明人： Tsutomu Okazaki ,  Daisuke Okada ,  Yoshihiro Ikeda ,  Keisuke Tsukamoto ,  Tatsuya Fukumura ,  Shoji Shukuri ,  Keiichi Haraguchi ,  Koji Kishi

    IPC分类号： H01L29/94 ,  H01L21/383

    CPC分类号： H01L27/11536 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L29/66181 ,  H01L29/7833

    摘要： At least not less than one capacitor formation trench providing an uneven surface is formed on the surface of a capacitor formation region. Thus, the surface area of a capacitor is increased, which enables improvement of the capacitance of the capacitor is increased, which enables improvement of the capacitance of the capacitor per unit area. Further, by forming the capacitor formation trench and an element formation trench that are formed in the surface of the semiconductor substrate by the same step, it is possible to simplify the manufacturing process. Whereas, a dielectric film of the capacitor in the capacitor formation region and a high-voltage insulating film in a MISFET formation region are formed by the same step; alternatively, the dielectric of the capacitor in the capacitor formation region and a memory gate interlayer film between a polysilicon layer and a polysilicon layer in the memory cell formation region are formed by the same step.

    摘要翻译： 在电容器形成区域的表面上形成至少不少于一个形成凹凸表面的电容器形成沟槽。 因此，电容器的表面积增大，能够提高电容器的电容量，能够提高单位面积的电容器的电容。 此外，通过形成通过相同的步骤形成在半导体衬底的表面中的电容器形成沟槽和元件形成沟槽，可以简化制造工艺。 而通过相同的步骤形成电容器形成区域中的电容器的电介质膜和MISFET形成区域中的高压绝缘膜; 或者，电容器形成区域中的电容器的电介质和存储单元形成区域中的多晶硅层和多晶硅层之间的存储器栅极层间膜通过相同的步骤形成。

    Video and audio signal output device
    6.
    发明授权
    Video and audio signal output device 失效
    视频和音频信号输出设备

    公开(公告)号：US07420621B2

    公开(公告)日：2008-09-02

    申请号：US11132187

    申请日：2005-05-19

    申请人： Keisuke Tsukamoto ,  Toshihiro Takagi

    发明人： Keisuke Tsukamoto ,  Toshihiro Takagi

    IPC分类号： H04N5/445

    CPC分类号： H04N17/04 ,  H04N5/44513 ,  H04N5/60 ,  H04N21/4122 ,  H04N21/4221 ,  H04N21/42221 ,  H04N21/42684 ,  H04N21/433 ,  H04N21/43615 ,  H04N21/43637 ,  H04N21/488

    摘要： When a user commands a microprocessor, using a remote control, to output information about a video and audio signal output device itself to a monitor device, the microprocessor superimposes, on video signals decoded by a decoder, video signals of a terminal connection information image for displaying, on the monitor device, color images corresponding to output signals from respective output terminals of red (R), green (G) and blue (B) in a VGA terminal or a BNC terminal so as to form and output combined video signals to the monitor device. Thus, e.g. if the monitor device has multiple video signal input terminals for inputting output signals from the respective output terminals of R, G and B, and if no signal is input from one of the input terminals, the user can confirm the input terminal, from which no signal is input, by just watching the screen of the monitor device without confirming the actual connection of the input terminals.

    摘要翻译： 当用户使用遥控器命令微处理器将视频和音频信号输出设备本身的信息输出到监视器装置时，微处理器将由解码器解码的视频信号叠加到终端连接信息图像的视频信号 在显示器装置上显示与VGA端子或BNC端子中的红色（R），绿色（G）和蓝色（B）的各个输出端子的输出信号相对应的彩色图像，以形成并输出组合的视频信号 监视器设备。 因此，例如 如果监视器装置具有用于输入来自R，G和B的各个输出端的输出信号的多个视频信号输入端子，并且如果没有信号从输入端子之一输入，则用户可以确认输入端子 信号被输入，只需要在不确认输入端子的实际连接的情况下观察监视器的屏幕。

    Television broadcast receiver
    7.
    发明申请
    Television broadcast receiver 失效
    电视广播接收机

    公开(公告)号：US20060020986A1

    公开(公告)日：2006-01-26

    申请号：US11175215

    申请日：2005-07-07

    申请人： Keisuke Tsukamoto

    发明人： Keisuke Tsukamoto

    IPC分类号： H04N7/173

    CPC分类号： H04N21/4345 ,  H04N5/4401 ,  H04N5/46 ,  H04N21/4221 ,  H04N21/4263 ,  H04N21/4383 ,  H04N21/44209 ,  H04N21/485

    摘要： A TV receiver comprises: a tuner connected to a unidirectional antenna or a smart antenna; a reception control unit for outputting, to the tuner, a channel control signal to command a channel, and outputting, to the smart antenna, a receiving direction control signal to command a receiving direction; and an antenna selection switch for a user to select the either antenna. The reception control unit switches its control mode between a unidirectional antenna mode and a smart antenna mode. In the unidirectional antenna mode, the reception control unit outputs a channel control signal to the tuner. In the smart antenna mode, the reception control unit outputs the channel control signal and the receiving direction control signal to the tuner and the smart antenna, respectively, for controlling the TV signal reception. This TV receiver can properly switch the antenna control mode, depending on the kind of antenna selected by the user.

    摘要翻译： 电视接收机包括：连接到单向天线或智能天线的调谐器; 接收控制单元，用于向调谐器输出用于命令信道的信道控制信号，并向智能天线输出接收方向控制信号以指令接收方向; 以及用于用户选择任一天线的天线选择开关。 接收控制单元在单向天线模式和智能天线模式之间切换其控制模式。 在单向天线模式中，接收控制单元向调谐器输出频道控制信号。 在智能天线模式中，接收控制单元将频道控制信号和接收方向控制信号分别输出到调谐器和智能天线，以控制TV信号的接收。 该电视接收机可以根据用户选择的天线种类，正确切换天线控制模式。

    Television broadcast receiver
    8.
    发明申请
    Television broadcast receiver 审中-公开
    电视广播接收机

    公开(公告)号：US20060010474A1

    公开(公告)日：2006-01-12

    申请号：US11175263

    申请日：2005-07-07

    申请人： Keisuke Tsukamoto

    发明人： Keisuke Tsukamoto

    IPC分类号： H04N5/50 ,  H04N7/20

    CPC分类号： H04N21/4345 ,  H04N5/50 ,  H04N21/4383 ,  H04N21/44209

    摘要： A television receiver comprises a tuner connected to a unidirectional antenna or a multi-directional antenna, and a microprocessor for controlling a reception process of the television receiver. The microprocessor outputs, to the connected antenna, a receiving direction control signal for commanding a receiving direction, and determines, on the basis of signal intensities of the television signal received by the tuner, which antenna is connected to the tuner. If the microprocessor determines that the unidirectional antenna is connected to the tuner, the microprocessor outputs, to the tuner, a channel control signal to command the tuner for a channel to be selected, while if the microprocessor determines that the multi-directional antenna is connected to the tuner, the microprocessor outputs, to the tuner, both the channel control signal and the receiving direction control signal. This television receiver can properly perform its television signal reception processes, depending on the kind of antenna connected thereto.

    摘要翻译： 电视接收机包括连接到单向天线或多方向天线的调谐器和用于控制电视接收机的接收处理的微处理器。 微处理器向所连接的天线输出用于指示接收方向的接收方向控制信号，并且基于由调谐器接收的电视信号的信号强度来确定哪个天线连接到调谐器。 如果微处理器确定单向天线连接到调谐器，则微处理器向调谐器输出通道控制信号以指示调谐器选择一个通道，而如果微处理器确定多方向天线已连接 微调器向调谐器输出信道控制信号和接收方向控制信号。 该电视接收机可以根据与其连接的天线的种类适当地执行其电视信号接收处理。