公开(公告)号：US07095074B2

公开(公告)日：2006-08-22

申请号：US10196166

申请日：2002-07-17

申请人： Keisuke Tsukamoto ,  Yoshihiro Ikeda ,  Tsutomu Okazaki ,  Daisuke Okada ,  Hiroshi Yanagita

发明人： Keisuke Tsukamoto ,  Yoshihiro Ikeda ,  Tsutomu Okazaki ,  Daisuke Okada ,  Hiroshi Yanagita

IPC分类号： H01L29/76 ,  H01L29/788

CPC分类号： H01L27/11526 ,  H01L27/105 ,  H01L27/11543

摘要： Defects in element forming regions on which memory cells of a non-volatile memory are formed are to be diminished to reduce leakage current. End portions of element forming regions with non-volatile memory cells formed thereon are extended a length D by utilizing the region which underlies a dummy conductive film, whereby a stress induced from an insulating film which surrounds the element forming regions is concentrated on the extended region. As a result, defects do not extend up to the regions where memory cells are formed and therefore it is possible to reduce leakage current in the memory cells.

摘要翻译： 在其上形成非易失性存储器的存储单元的元件形成区域中的缺陷将被减小以减少泄漏电流。 在其上形成有非易失性存储单元的元件形成区域的端部通过利用虚设导电膜下面的区域而延伸长度D，由此围绕元件形成区域的绝缘膜引起的应力集中在延伸区域上 。 结果，缺陷不延伸到形成存储单元的区域，因此可以减少存储单元中的漏电流。

公开(公告)号：US07001808B2

公开(公告)日：2006-02-21

申请号：US10786334

申请日：2004-02-26

申请人： Keisuke Tsukamoto ,  Yoshihiro Ikeda ,  Tsutomu Okazaki ,  Daisuke Okada ,  Hiroshi Yanagita

发明人： Keisuke Tsukamoto ,  Yoshihiro Ikeda ,  Tsutomu Okazaki ,  Daisuke Okada ,  Hiroshi Yanagita

IPC分类号： H01L31/336

CPC分类号： H01L27/11526 ,  H01L27/105 ,  H01L27/11543

摘要： Defects in element forming regions on which memory cells of a non-volatile memory are formed are to be diminished to reduce leakage current. End portions of element forming regions with non-volatile memory cells formed thereon are extended a length D by utilizing the region which underlies a dummy conductive film, whereby a stress induced from an insulating film which surrounds the element forming regions is concentrated on the extended region. As a result, defects do not extend up to the regions where memory cells are formed and therefore it is possible to reduce leakage current in the memory cells.

摘要翻译： 在其上形成非易失性存储器的存储单元的元件形成区域中的缺陷将被减小以减少泄漏电流。 在其上形成有非易失性存储单元的元件形成区域的端部通过利用虚设导电膜下面的区域而延伸长度D，由此围绕元件形成区域的绝缘膜引起的应力集中在延伸区域上 。 结果，缺陷不延伸到形成存储单元的区域，因此可以减少存储单元中的漏电流。

公开(公告)号：US06808951B2

公开(公告)日：2004-10-26

申请号：US09987884

申请日：2001-11-16

申请人： Yoshihiro Ikeda ,  Tsutomu Okazaki ,  Keisuke Tsukamoto ,  Hiroshi Yanagita ,  Daisuke Okada

发明人： Yoshihiro Ikeda ,  Tsutomu Okazaki ,  Keisuke Tsukamoto ,  Hiroshi Yanagita ,  Daisuke Okada

IPC分类号： H01L2100

CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L27/11524

摘要： An insulating film for protecting an upper portion of a control gate electrode is constituted by a silicon oxide film, and thereby stress affecting a gate oxide film and a substrate that is located below a bottom portion thereof is reduced. Further, an etching prevention film consisting of a silicon nitride film is formed on a sidewall of the silicon oxide film, and thereby it is possible to prevent the sidewall of the silicon oxide film from being etched in a hydrofluoric acid cleaning step after processing of a gate electrode.

摘要翻译： 用于保护控制栅电极的上部的绝缘膜由氧化硅膜构成，从而降低了影响栅极氧化膜和位于其底部下方的衬底的应力。 此外，在氧化硅膜的侧壁上形成由氮化硅膜构成的防蚀膜，从而可以防止氧化硅膜的侧壁在氢氟酸清洗工序中被蚀刻 栅电极。

公开(公告)号：US07553334B2

公开(公告)日：2009-06-30

申请号：US11976238

申请日：2007-10-23

申请人： Eiichi Hazaki ,  Yasuhiro Mitsui ,  Takashi Furukawa ,  Hiroshi Yanagita ,  Susumu Kato ,  Osamu Satou ,  Osamu Yamada ,  Yoshikazu Inada

发明人： Eiichi Hazaki ,  Yasuhiro Mitsui ,  Takashi Furukawa ,  Hiroshi Yanagita ,  Susumu Kato ,  Osamu Satou ,  Osamu Yamada ,  Yoshikazu Inada

IPC分类号： G01N13/10

CPC分类号： G01R31/2891 ,  G01N23/225 ,  G01R31/2887 ,  H01J37/20 ,  H01J37/226 ,  H01J37/28 ,  H01J2237/2007 ,  H01J2237/2008 ,  H01J2237/20221 ,  H01J2237/204 ,  H01J2237/24564 ,  H01J2237/2482

摘要： For adjusting a positional relationship between a specimen and a probe to measure an electric characteristic of the specimen through a contact therebetween, a base table holding a specimen table holding the specimen and a probe holder holding the probe is positioned at a first position to measure the positional relationship between the probe and the specimen at the first position, and subsequently positioned at a second position to measure the positional relationship therebetween at the second position so that the probe and the specimen are contact each other at the second position, the specimen table and the probe holder are movable with respect to each other on the base table at each of the first and second positions to adjust the positional relationship between the probe and the specimen, and a measuring accuracy at the second position is superior to a measuring accuracy at the first position.

摘要翻译： 为了调整试样与探针之间的位置关系，通过它们之间的接触测量试样的电特性，将保持试样的试样台的基台和保持探针的探针架固定在第一位置，以测量 在第一位置处的探针和样本之间的位置关系，并且随后位于第二位置以测量其在第二位置处的位置关系，使得探针和样本在第二位置彼此接触，样本台和 探针支架能够在基台上在第一和第二位置中的每一个处相对于彼此移动，以调节探针与样本之间的位置关系，并且第二位置处的测量精度优于 第一名

公开(公告)号：US07297945B2

公开(公告)日：2007-11-20

申请号：US11002710

申请日：2004-12-03

申请人： Eiichi Hazaki ,  Yasuhiro Mitsui ,  Takashi Furukawa ,  Hiroshi Yanagita ,  Susumu Kato ,  Osamu Satou ,  Osamu Yamada ,  Yoshikazu Inada

发明人： Eiichi Hazaki ,  Yasuhiro Mitsui ,  Takashi Furukawa ,  Hiroshi Yanagita ,  Susumu Kato ,  Osamu Satou ,  Osamu Yamada ,  Yoshikazu Inada

IPC分类号： G01N23/00

CPC分类号： G01R31/2891 ,  G01N23/225 ,  G01R31/2887 ,  H01J37/20 ,  H01J37/226 ,  H01J37/28 ,  H01J2237/2007 ,  H01J2237/2008 ,  H01J2237/20221 ,  H01J2237/204 ,  H01J2237/24564 ,  H01J2237/2482

摘要： For adjusting a positional relationship between a specimen and a probe to measure an electric characteristic of the specimen through a contact therebetween, a base table holding a specimen table holding the specimen and a probe holder holding the probe is positioned at a first position to measure the positional relationship between the probe and the specimen at the first position, and subsequently positioned at a second position to measure the positional relationship therebetween at the second position so that the probe and the specimen are contact each other at the second position, the specimen table and the probe holder are movable with respect to each other on the base table at each of the first and second positions to adjust the positional relationship between the probe and the specimen, and a measuring accuracy at the second position is superior to a measuring accuracy at the first position.

摘要翻译： 为了调整试样与探针之间的位置关系，通过它们之间的接触测量试样的电特性，将保持试样的试样台的基台和保持探针的探针架固定在第一位置，以测量 在第一位置处的探针和样本之间的位置关系，并且随后位于第二位置以测量其在第二位置处的位置关系，使得探针和样本在第二位置彼此接触，样本台和 探针支架能够在基台上在第一和第二位置中的每一个处相对于彼此移动，以调节探针与样本之间的位置关系，并且第二位置处的测量精度优于 第一名

公开(公告)号：US20050139781A1

公开(公告)日：2005-06-30

申请号：US11002710

申请日：2004-12-03

申请人： Eiichi Hazaki ,  Yasuhiro Mitsui ,  Takashi Furukawa ,  Hiroshi Yanagita ,  Susumu Kato ,  Osamu Satou ,  Osamu Yamada ,  Yoshikazu Inada

发明人： Eiichi Hazaki ,  Yasuhiro Mitsui ,  Takashi Furukawa ,  Hiroshi Yanagita ,  Susumu Kato ,  Osamu Satou ,  Osamu Yamada ,  Yoshikazu Inada

IPC分类号： G01Q30/02 ,  G01N23/225 ,  G21K7/00 ,  G01N23/00

CPC分类号： G01R31/2891 ,  G01N23/225 ,  G01R31/2887 ,  H01J37/20 ,  H01J37/226 ,  H01J37/28 ,  H01J2237/2007 ,  H01J2237/2008 ,  H01J2237/20221 ,  H01J2237/204 ,  H01J2237/24564 ,  H01J2237/2482

摘要： For adjusting a positional relationship between a specimen and a probe to measure an electric characteristic of the specimen through a contact therebetween, a base table holding a specimen table holding the specimen and a probe holder holding the probe is positioned at a first position to measure the positional relationship between the probe and the specimen at the first position, and subsequently positioned at a second position to measure the positional relationship therebetween at the second position so that the probe and the specimen are contact each other at the second position, the specimen table and the probe holder are movable with respect to each other on the base table at each of the first and second positions to adjust the positional relationship between the probe and the specimen, and a measuring accuracy at the second position is superior to a measuring accuracy at the first position.

摘要翻译： 为了调整试样与探针之间的位置关系，通过它们之间的接触测量试样的电特性，将保持试样的试样台的基台和保持探针的探针架固定在第一位置，以测量 在第一位置处的探针和样本之间的位置关系，并且随后位于第二位置以测量其在第二位置处的位置关系，使得探针和样本在第二位置彼此接触，样本台和 探针支架能够在基台上在第一和第二位置中的每一个处相对于彼此移动，以调节探针与样本之间的位置关系，并且第二位置处的测量精度优于 第一名

公开(公告)号：US08110878B2

公开(公告)日：2012-02-07

申请号：US13179163

申请日：2011-07-08

申请人： Naozumi Morino ,  Atsushi Hiraiwa ,  Kazutoshi Oku ,  Toshiaki Ito ,  Motoshige Igarashi ,  Takayuki Sasaki ,  Masao Sugiyama ,  Hiroshi Yanagita ,  Shinichi Watarai

发明人： Naozumi Morino ,  Atsushi Hiraiwa ,  Kazutoshi Oku ,  Toshiaki Ito ,  Motoshige Igarashi ,  Takayuki Sasaki ,  Masao Sugiyama ,  Hiroshi Yanagita ,  Shinichi Watarai

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L27/01 ,  H01L27/12 ,  H01L31/0392 ,  H01L23/62

CPC分类号： H01L21/823892 ,  H01L27/0629 ,  H01L27/0928 ,  H01L2224/05554

摘要： There is provided a technology which allows improvements in manufacturing yield and product reliability in a semiconductor device having a triple well structure. A shallow p-type well is formed in a region different from respective regions in a p-type substrate where a deep n-type well, a shallow p-type well, and a shallow n-type well are formed. A p-type diffusion tap formed in the shallow p-type well is wired to a p-type diffusion tap formed in a shallow n-type well in the deep n-type well using an interconnection in a second layer. The respective gate electrodes of an nMIS and a pMIS each formed in the deep n-type well are coupled to the respective drain electrodes of an nMIS and a pMIS each formed in the substrate using an interconnection in a second or higher order layer.

摘要翻译： 提供了一种在具有三重阱结构的半导体器件中提高制造产量和产品可靠性的技术。 在形成深n型阱，浅P型阱和浅n型阱的p型衬底中，在与各个区域不同的区域中形成浅的p型阱。 形成在浅p型阱中的p型扩散抽头使用在第二层中的互连在深n型阱中连接到形成在浅n型阱中的p型扩散阱。 每个形成在深n型阱中的nMIS和pMIS的相应栅极电极使用在第二层或更高级层中的互连而在衬底中形成的nMIS和pMIS的相应漏电极耦合。

公开(公告)号：US07982271B2

公开(公告)日：2011-07-19

申请号：US12901858

申请日：2010-10-11

申请人： Naozumi Morino ,  Atsushi Hiraiwa ,  Kazutoshi Oku ,  Toshiaki Ito ,  Motoshige Igarashi ,  Takayuki Sasaki ,  Masao Sugiyama ,  Hiroshi Yanagita ,  Shinichi Watarai

发明人： Naozumi Morino ,  Atsushi Hiraiwa ,  Kazutoshi Oku ,  Toshiaki Ito ,  Motoshige Igarashi ,  Takayuki Sasaki ,  Masao Sugiyama ,  Hiroshi Yanagita ,  Shinichi Watarai

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L27/01 ,  H01L27/12 ,  H01L31/0392 ,  H01L23/62

CPC分类号： H01L21/823892 ,  H01L27/0629 ,  H01L27/0928 ,  H01L2224/05554

摘要： There is provided a technology which allows improvements in manufacturing yield and product reliability in a semiconductor device having a triple well structure. A shallow p-type well is formed in a region different from respective regions in a p-type substrate where a deep n-type well, a shallow p-type well, and a shallow n-type well are formed. A p-type diffusion tap formed in the shallow p-type well is wired to a p-type diffusion tap formed in a shallow n-type well in the deep n-type well using an interconnection in a second layer. The respective gate electrodes of an nMIS and a pMIS each formed in the deep n-type well are coupled to the respective drain electrodes of an nMIS and a pMIS each formed in the substrate using an interconnection in a second or higher order layer.

摘要翻译： 提供了一种在具有三重阱结构的半导体器件中提高制造产量和产品可靠性的技术。 在形成深n型阱，浅P型阱和浅n型阱的p型衬底中，在与各个区域不同的区域中形成浅的p型阱。 形成在浅p型阱中的p型扩散抽头使用在第二层中的互连在深n型阱中连接到形成在浅n型阱中的p型扩散阱。 每个形成在深n型阱中的nMIS和pMIS的相应栅极电极使用在第二层或更高级层中的互连而在衬底中形成的nMIS和pMIS的相应漏电极耦合。

公开(公告)号：US08074293B2

公开(公告)日：2011-12-06

申请号：US12471907

申请日：2009-05-26

申请人： Eiichi Hazaki ,  Yasuhiro Mitsui ,  Takashi Furukawa ,  Hiroshi Yanagita ,  Susumu Kato ,  Osamu Satou ,  Osamu Yamada ,  Yoshikazu Inada

发明人： Eiichi Hazaki ,  Yasuhiro Mitsui ,  Takashi Furukawa ,  Hiroshi Yanagita ,  Susumu Kato ,  Osamu Satou ,  Osamu Yamada ,  Yoshikazu Inada

IPC分类号： H01J37/20 ,  G01N13/16

CPC分类号： G01R31/2891 ,  G01N23/225 ,  G01R31/2887 ,  H01J37/20 ,  H01J37/226 ,  H01J37/28 ,  H01J2237/2007 ,  H01J2237/2008 ,  H01J2237/20221 ,  H01J2237/204 ,  H01J2237/24564 ,  H01J2237/2482

摘要： For adjusting a positional relationship between a specimen and a probe to measure an electric characteristic of the specimen through a contact therebetween, a base table holding a specimen table holding the specimen and a probe holder holding the probe is positioned at a first position to measure the positional relationship between the probe and the specimen at the first position, and subsequently positioned at a second position to measure the positional relationship therebetween at the second position so that the probe and the specimen are contact each other at the second position, the specimen table and the probe holder are movable with respect to each other on the base table at each of the first and second positions to adjust the positional relationship between the probe and the specimen, and a measuring accuracy at the second position is superior to a measuring accuracy at the first position.

摘要翻译： 为了调整试样与探针之间的位置关系，通过它们之间的接触测量试样的电特性，将保持试样的试样台的基台和保持探针的探针架固定在第一位置，以测量 在第一位置处的探针和样本之间的位置关系，并且随后位于第二位置以测量其在第二位置处的位置关系，使得探针和样本在第二位置彼此接触，样本台和 探针支架能够在基台上在第一和第二位置中的每一个处相对于彼此移动，以调节探针与样本之间的位置关系，并且第二位置处的测量精度优于 第一名

公开(公告)号：US08040552B2

公开(公告)日：2011-10-18

申请号：US11759425

申请日：2007-06-07

申请人： Hiroshi Yanagita

发明人： Hiroshi Yanagita

IPC分类号： G06K15/00

CPC分类号： G06T11/60

摘要： There is provided a variable data image generating device including a plurality of first type image generating units that execute a first rendering instruction for a distributed record and generates a first type image corresponding to the record; a first type image memory that stores the first type image corresponding to each record generated by each of the first image generating units; a distributing unit that distributes a record in variable data to each of the first type image generating units; and a document image generating unit that executes a drawing program including one or more instructions for each record in the variable data, wherein the document image generating unit generates a document image for each record by obtaining the first type image corresponding to the record from the first type image memory and laying out the obtained image in response to the first rendering instruction in the rendering program.

摘要翻译： 提供了一种可变数据图像生成装置，包括：多个第一类型图像生成单元，其对分散记录执行第一再现指示，并生成与记录对应的第一类型图像; 第一类型图像存储器，存储与由每个第一图像生成单元生成的每个记录相对应的第一类型图像; 分配单元，其向每个第一类型图像生成单元分发可变数据中的记录; 以及文件图像生成单元，其对可变数据中的每个记录执行包括一个或多个指令的绘图程序，其中，所述文档图像生成单元通过从所述第一图像获取与所述记录相对应的所述第一类型图像来生成每个记录的文档图像 类型图像存储器，并且响应于渲染程序中的第一渲染指令布置所获得的图像。