公开(公告)号：US20120081973A1

公开(公告)日：2012-04-05

申请号：US13311318

申请日：2011-12-05

申请人： Yoshihiro KISHIMOTO ,  Yuji Sekiguchi ,  Yoichiro Miki

发明人： Yoshihiro KISHIMOTO ,  Yuji Sekiguchi ,  Yoichiro Miki

IPC分类号： G11C7/10

CPC分类号： G11C7/222 ,  G11C7/10 ,  G11C7/1051 ,  G11C7/106 ,  G11C7/1066 ,  G11C7/1078 ,  G11C7/1093 ,  G11C7/22

摘要： A strobe signal from a memory is delayed through delay circuits of a strobe delay selection section, thus obtaining a plurality of delayed strobe signals. A strobe latch section produces check data in synchronism with each of the delayed strobe signals, and a system latch section latches, with a system clock, check data latched by the strobe latch section. Based on a comparison by an expected value comparison section and a determination by a delay determination section, the optimal strobe signal with the optimal delay is selected from among the delayed strobe signals produced in the strobe delay selection section. Then, data from the memory is delayed through delay circuits in a data delay selection section, thus obtaining a plurality of delayed data, and the optimal data with the optimal delay is selected from among the plurality of delayed data based on the comparison by the expected value comparison section and the determination by the delay determination section.

摘要翻译： 来自存储器的选通信号通过选通延迟选择部分的延迟电路被延迟，从而获得多个延迟的选通信号。 选通锁存部分与延迟的选通信号中的每一个同步地产生检查数据，并且系统锁存部分用系统时钟锁存由选通锁存部分锁存的数据。 基于期望值比较部分的比较和延迟确定部分的确定，从选通延迟选择部分中产生的延迟选通信号中选择具有最佳延迟的最佳选通信号。 然后，通过数据延迟选择部分中的延迟电路来延迟来自存储器的数据，从而获得多个延迟数据，并且基于预期的比较，从多个延迟数据中选择具有最佳延迟的最佳数据 值比较部分和延迟确定部分的确定。

公开(公告)号：US20100315892A1

公开(公告)日：2010-12-16

申请号：US12851122

申请日：2010-08-05

申请人： Yoshihiro KISHIMOTO ,  Yuji Sekiguchi ,  Yoichiro Miki

发明人： Yoshihiro KISHIMOTO ,  Yuji Sekiguchi ,  Yoichiro Miki

IPC分类号： G11C7/00

CPC分类号： G11C7/222 ,  G11C7/10 ,  G11C7/1051 ,  G11C7/106 ,  G11C7/1066 ,  G11C7/1078 ,  G11C7/1093 ,  G11C7/22

摘要： A strobe signal from a memory is delayed through delay circuits of a strobe delay selection section, thus obtaining a plurality of delayed strobe signals. A strobe latch section produces check data in synchronism with each of the delayed strobe signals, and a system latch section latches, with a system clock, check data latched by the strobe latch section. Based on a comparison by an expected value comparison section and a determination by a delay determination section, the optimal strobe signal with the optimal delay is selected from among the delayed strobe signals produced in the strobe delay selection section. Then, data from the memory is delayed through delay circuits in a data delay selection section, thus obtaining a plurality of delayed data, and the optimal data with the optimal delay is selected from among the plurality of delayed data based on the comparison by the expected value comparison section and the determination by the delay determination section.

摘要翻译： 来自存储器的选通信号通过选通延迟选择部分的延迟电路被延迟，从而获得多个延迟的选通信号。 选通锁存部分与延迟的选通信号中的每一个同步地产生检查数据，并且系统锁存部分用系统时钟锁存由选通锁存部分锁存的数据。 基于期望值比较部分的比较和延迟确定部分的确定，从选通延迟选择部分中产生的延迟选通信号中选择具有最佳延迟的最佳选通信号。 然后，通过数据延迟选择部分中的延迟电路来延迟来自存储器的数据，从而获得多个延迟数据，并且基于预期的比较，从多个延迟数据中选择具有最佳延迟的最佳数据 值比较部分和延迟确定部分的确定。

公开(公告)号：US20080291749A1

公开(公告)日：2008-11-27

申请号：US12184797

申请日：2008-08-01

申请人： Yoshihiro KISHIMOTO ,  Yuji SEKIGUCHI ,  Yoichiro MIKI

发明人： Yoshihiro KISHIMOTO ,  Yuji SEKIGUCHI ,  Yoichiro MIKI

IPC分类号： G11C7/00

CPC分类号： G11C7/222 ,  G11C7/10 ,  G11C7/1051 ,  G11C7/106 ,  G11C7/1066 ,  G11C7/1078 ,  G11C7/1093 ,  G11C7/22

摘要： A strobe signal from a memory is delayed through delay circuits of a strobe delay selection section, thus obtaining a plurality of delayed strobe signals. A strobe latch section produces check data in synchronism with each of the delayed strobe signals, and a system latch section latches, with a system clock, check data latched by the strobe latch section. Based on a comparison by an expected value comparison section and a determination by a delay determination section, the optimal strobe signal with the optimal delay is selected from among the delayed strobe signals produced in the strobe delay selection section. Then, data from the memory is delayed through delay circuits in a data delay selection section, thus obtaining a plurality of delayed data, and the optimal data with the optimal delay is selected from among the plurality of delayed data based on the comparison by the expected value comparison section and the determination by the delay determination section.

摘要翻译： 来自存储器的选通信号通过选通延迟选择部分的延迟电路被延迟，从而获得多个延迟的选通信号。 选通锁存部分与延迟的选通信号中的每一个同步地产生检查数据，并且系统锁存部分用系统时钟锁存由选通锁存部分锁存的数据。 基于期望值比较部分的比较和延迟确定部分的确定，从选通延迟选择部分中产生的延迟选通信号中选择具有最佳延迟的最佳选通信号。 然后，通过数据延迟选择部分中的延迟电路来延迟来自存储器的数据，从而获得多个延迟数据，并且基于预期的比较，从多个延迟数据中选择具有最佳延迟的最佳数据 值比较部分和延迟确定部分的确定。

公开(公告)号：US20110163276A1

公开(公告)日：2011-07-07

申请号：US13044704

申请日：2011-03-10

申请人： Yoshihiro KISHIMOTO

发明人： Yoshihiro KISHIMOTO

IPC分类号： C23C14/14 ,  H01B1/04

CPC分类号： C09D1/00 ,  C23C14/10 ,  C23C14/28 ,  C23C14/562 ,  Y10T428/31667

摘要： A powder mixture to be made into an evaporation source material for use in ion plating, and an evaporation source material useful for ion plating and a method of producing it, and a gas barrier sheet and a method of producing it. The powder mixture comprises 100 parts by weight of silicon oxide powder and 5 to 100 parts by weight of a conductive material powder. Preferably, both the silicon oxide powder and the conductive material powder have a mean particle diameter of 5 μm or less. The conductive material powder is preferably a powder of at least one material selected from metals and electrically conductive metallic oxides, nitrides and acid nitrides. The evaporation source material for use in ion plating is in the form of agglomerates having a mean particle diameter of 2 mm or more, or a block, obtained by granulating or compression-molding the powder mixture.

摘要翻译： 制成用于离子镀的蒸发源材料的粉末混合物和用于离子镀的蒸发源材料及其制造方法，以及阻气性片及其制造方法。 粉末混合物包含100重量份的氧化硅粉末和5至100重量份的导电材料粉末。 优选地，氧化硅粉末和导电材料粉末的平均粒径均为5μm以下。 导电材料粉末优选为选自金属和导电金属氧化物，氮化物和酸性氮化物中的至少一种材料的粉末。 用于离子镀的蒸发源材料为平均粒径为2mm以上的附聚物的形式，或通过造粒或压缩成型粉末混合物得到的嵌段。

公开(公告)号：US20100075082A1

公开(公告)日：2010-03-25

申请号：US12631991

申请日：2009-12-07

申请人： Minoru KOMADA ,  Yoshihiro KISHIMOTO

发明人： Minoru KOMADA ,  Yoshihiro KISHIMOTO

IPC分类号： B32B1/02 ,  B32B27/06 ,  C23C14/34 ,  C23C14/35 ,  C23C14/36

CPC分类号： C23C14/10 ,  B32B27/00 ,  B32B33/00 ,  B32B2307/7244 ,  B32B2553/00 ,  C23C14/0676 ,  H01L21/02126 ,  H01L21/02266 ,  H01L21/3143 ,  H01L21/31633 ,  Y10T428/1064 ,  Y10T428/1334 ,  Y10T428/1352 ,  Y10T428/265 ,  Y10T428/28 ,  Y10T428/31667

摘要： An object of the present invention is to provide a barrier film having the extremely high barrier property and the better transparency, a method for manufacturing the same, and a laminated material, a container for wrapping and an image displaying medium using the barrier film. According to the present invention, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, wherein the barrier layer is a silicon oxide film having an atomic ratio in a range of Si:O:C=100:140 to 170:20 to 40, peak position of infrared-ray absorption due to Si—O—Si stretching vibration between 1060 to 1090 cm−1, a film density in a range of 2.6 to 2.8 g/cm3, and a distance between grains of 30 nm or shorter. Still more, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, has a composition wherein the barrier layer is a silicon oxi-nitride film, and the silicon oxi-nitride film has an atomic ratio in a range of Si:O:N:C=100:60 to 90:60 to 90:20 to 40, a maximum peak of infrared-ray absorption due to Si—O stretching vibration and Si—N stretching vibration is in a range of 820 to 930 cm−1, a film density is in a range of 2.9 to 3.2 g/cm3, and a distance between grains is 30 nm or shorter.

摘要翻译： 本发明的目的是提供一种具有极高的阻隔性和更好的透明度的阻挡膜及其制造方法，以及叠层材料，用于包装的容器和使用阻挡膜的图像显示介质。 根据本发明，提供了一种在基材膜的至少一个表面上设置有阻挡层的阻挡膜，其中阻挡层是原子比在Si：O：C = 100：140〜170：20〜40，由于Si-O-Si伸长振动在1060〜1090cm -1之间的红外线吸收的峰值位置，膜密度在2.6〜2.8g / cm 3范围内， 颗粒之间的距离为30nm或更短。 另外，提供了在基板薄膜的至少一个表面上设置有阻挡层的阻挡膜，具有其中阻挡层为硅氧化氮膜的组成，硅氧化氮膜具有原子比 在Si：O:N:C = 100:60至90:60至90:20至40的范围内，由于Si-O伸缩振动和Si-N伸缩振动导致的红外线吸收的最大峰值为 范围为820〜930cm -1，膜密度为2.9〜3.2g / cm 3，晶粒间距离为30nm以下。