公开(公告)号：US20090194790A1

公开(公告)日：2009-08-06

申请号：US12318779

申请日：2009-01-08

申请人： Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Takehiko Nomura ,  Seikoh Yoshida ,  Masayuki Iwami ,  Jiang Li

发明人： Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Takehiko Nomura ,  Seikoh Yoshida ,  Masayuki Iwami ,  Jiang Li

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/0843 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/267 ,  H01L29/4232 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/7789

摘要： A field effect transistor has an MOS structure and is formed of a nitride based compound semiconductor. The field effect transistor includes a substrate; a semiconductor operating layer having a recess part and formed on the substrate; an insulating layer formed on the semiconductor operating layer including the recess part; a gate electrode formed on the insulating layer at the recess part; and a source electrode and a drain electrode formed on the semiconductor operating layer with the recess part in between and electrically connected to the semiconductor operating layer. The recess part includes a side wall protruding and inclined relative to the semiconductor operating layer.

摘要翻译： 场效应晶体管具有MOS结构并且由氮化物基化合物半导体形成。 场效应晶体管包括衬底; 半导体工作层，具有凹部并形成在所述基板上; 形成在包括凹部的半导体操作层上的绝缘层; 形成在所述凹部的所述绝缘层上的栅电极; 以及形成在半导体操作层上的源电极和漏电极，其中凹部位于半导体操作层之间并与半导体操作层电连接。 凹部包括相对于半导体操作层突出并倾斜的侧壁。

公开(公告)号：US09048302B2

公开(公告)日：2015-06-02

申请号：US12318779

申请日：2009-01-08

申请人： Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Takehiko Nomura ,  Seikoh Yoshida ,  Masayuki Iwami ,  Jiang Li

发明人： Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Takehiko Nomura ,  Seikoh Yoshida ,  Masayuki Iwami ,  Jiang Li

IPC分类号： H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/778 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/267

CPC分类号： H01L29/7813 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/0843 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/267 ,  H01L29/4232 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/7789

摘要： A field effect transistor has an MOS structure and is formed of a nitride based compound semiconductor. The field effect transistor includes a substrate; a semiconductor operating layer having a recess and formed on the substrate; an insulating layer formed on the semiconductor operating layer including the recess; a gate electrode formed on the insulating layer at the recess; and a source electrode and a drain electrode formed on the semiconductor operating layer with the recess in between and electrically connected to the semiconductor operating layer. The recess includes a side wall inclined relative to the semiconductor operating layer.

摘要翻译： 场效应晶体管具有MOS结构并且由氮化物基化合物半导体形成。 场效应晶体管包括衬底; 具有凹部并形成在所述基板上的半导体操作层; 形成在包括所述凹部的所述半导体操作层上的绝缘层; 在所述凹部处形成在所述绝缘层上的栅电极; 以及形成在半导体操作层上的源电极和漏电极，其中凹部位于半导体操作层之间并与半导体操作层电连接。 凹部包括相对于半导体操作层倾斜的侧壁。

公开(公告)号：US20090278172A1

公开(公告)日：2009-11-12

申请号：US12382010

申请日：2009-03-05

申请人： Shusuke Kaya ,  Seikoh Yoshida ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Masatoshi Ikeda

发明人： Shusuke Kaya ,  Seikoh Yoshida ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Masatoshi Ikeda

IPC分类号： H01L29/205

CPC分类号： H01L29/0847 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7787

摘要： The field effect transistor includes a laminated structure in which a buffer layer, and an electron transporting layer (undoped GaN layer), and an electron supplying layer (undoped AlGaN layer) are laminated in sequence on a sapphire substrate. An npn laminated structure is formed on a source region of the electron supplying layer, and a source electrode is formed on the npn laminated structure. A drain electrode is formed in a drain region of the electron supplying layer, and an insulating film is formed in an opening region formed in the gate region. When a forward voltage greater than a threshold is applied to the gate electrode, an inversion layer is formed and the drain current flows. By changing a thickness and an impurity concentration of the p-type GaN layer, the threshold voltage can be controlled. The electrical field concentration between the gate electrode and the drain electrode is relaxed due to the drift layer, and voltage resistance improves.

摘要翻译： 场效应晶体管包括其中缓冲层和电子传输层（未掺杂的GaN层）和电子供应层（未掺杂的AlGaN层）依次叠置在蓝宝石衬底上的叠层结构。 在电子供给层的源极区域上形成npn层叠结构，在npn层叠结构上形成源电极。 在电子供给层的漏极区域中形成漏电极，并且在形成在栅极区域的开口区域中形成绝缘膜。 当向栅电极施加大于阈值的正向电压时，形成反型层，漏极电流流动。 通过改变p型GaN层的厚度和杂质浓度，可以控制阈值电压。 由于漂移层，栅极电极和漏电极之间的电场浓度被松弛，并且耐电压提高。

公开(公告)号：US07812371B2

公开(公告)日：2010-10-12

申请号：US12382010

申请日：2009-03-05

申请人： Shusuke Kaya ,  Seikoh Yoshida ,  Masatoshi Ikeda, legal representative ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama

发明人： Shusuke Kaya ,  Seikoh Yoshida ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama

IPC分类号： H01L31/072

CPC分类号： H01L29/0847 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7787

摘要： The field effect transistor includes a laminated structure in which a buffer layer, and an electron transporting layer (undoped GaN layer), and an electron supplying layer (undoped AlGaN layer) are laminated in sequence on a sapphire substrate. An npn laminated structure is formed on a source region of the electron supplying layer, and a source electrode is formed on the npn laminated structure. A drain electrode is formed in a drain region of the electron supplying layer, and an insulating film is formed in an opening region formed in the gate region. When a forward voltage greater than a threshold is applied to the gate electrode, an inversion layer is formed and the drain current flows. By changing a thickness and an impurity concentration of the p-type GaN layer, the threshold voltage can be controlled. The electrical field concentration between the gate electrode and the drain electrode is relaxed due to the drift layer, and voltage resistance improves.

摘要翻译： 场效应晶体管包括其中缓冲层和电子传输层（未掺杂的GaN层）和电子供体层（未掺杂的AlGaN层）依次层叠在蓝宝石衬底上的叠层结构。 在电子供给层的源极区域上形成npn层叠结构，在npn层叠结构上形成源电极。 在电子供给层的漏极区域中形成漏电极，并且在形成在栅极区域的开口区域中形成绝缘膜。 当向栅电极施加大于阈值的正向电压时，形成反型层，漏极电流流动。 通过改变p型GaN层的厚度和杂质浓度，可以控制阈值电压。 由于漂移层，栅极电极和漏电极之间的电场浓度被松弛，并且耐电压提高。

公开(公告)号：US20100219455A1

公开(公告)日：2010-09-02

申请号：US12699957

申请日：2010-02-04

申请人： Yuki Niiyama ,  Seikoh Yoshida ,  Takehiko Nomura ,  Hiroshi Kambayashi

发明人： Yuki Niiyama ,  Seikoh Yoshida ,  Takehiko Nomura ,  Hiroshi Kambayashi

IPC分类号： H01L29/20 ,  H01L29/78

CPC分类号： H01L29/0847 ,  H01L29/2003 ,  H01L29/66659 ,  H01L29/7835

摘要： An active layer of a first conductive-type includes a channel area. A first contact area and a second contact area of a second conductive-type are formed at positions across the channel area. A source electrode is formed on the first contact area. A drain electrode is formed on the second contact area. A gate electrode is formed above the channel area via a gate insulating layer. A reduced surface field zone of the second conductive-type is formed in the channel area at a position close to the second contact area. Thickness of the reduced surface field zone is 30 nanometers to 100 nanometers.

摘要翻译： 第一导电类型的有源层包括沟道区域。 第二导电类型的第一接触区域和第二接触区域形成在穿过沟道区域的位置处。 源电极形成在第一接触区域上。 漏电极形成在第二接触区域上。 栅极通过栅极绝缘层形成在沟道区的上方。 第二导电类型的减小的表面场区形成在靠近第二接触区域的位置处的通道区域中。 还原表面场区的厚度为30纳米至100纳米。

公开(公告)号：US20100219451A1

公开(公告)日：2010-09-02

申请号：US12648564

申请日：2009-12-29

申请人： Tat-Sing Paul Chow ,  Takehiko Nomura ,  Yuki Niiyama ,  Hiroshi Kambayashi ,  Seikoh Yoshida

发明人： Tat-Sing Paul Chow ,  Takehiko Nomura ,  Yuki Niiyama ,  Hiroshi Kambayashi ,  Seikoh Yoshida

IPC分类号： H01L29/78 ,  H01L21/335

CPC分类号： H01L29/0847 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7787 ,  H01L29/7835

摘要： A p-type nitride compound semiconductor layer is formed on a buffer formed on a substrate. An n-type contact region is formed by ion implantation under a source electrode and a drain electrode. An electric-field reducing layer made of an n-type nitride compound semiconductor is formed on the p-type nitride compound semiconductor layer. A career density of the electric-field reducing layer is lower than that of the n-type contact region. A first end portion of the electric-field reducing layer contacts with the n-type contact region, and a second end portion of the electric-field reducing layer overlaps with a gate electrode.

摘要翻译： 在形成在基板上的缓冲液上形成p型氮化物化合物半导体层。 在源电极和漏电极下通过离子注入形成n型接触区域。 在p型氮化物半导体层上形成由n型氮化物化合物半导体构成的电场减少层。 电场降低层的职业密度低于n型接触区域的职业密度。 电场减少层的第一端部与n型接触区域接触，并且电场减少层的第二端部与栅电极重叠。

公开(公告)号：US08350293B2

公开(公告)日：2013-01-08

申请号：US12648564

申请日：2009-12-29

申请人： Tat-Sing Paul Chow ,  Takehiko Nomura ,  Yuki Niiyama ,  Hiroshi Kambayashi ,  Seikoh Yoshida

发明人： Tat-Sing Paul Chow ,  Takehiko Nomura ,  Yuki Niiyama ,  Hiroshi Kambayashi ,  Seikoh Yoshida

IPC分类号： H01L29/08

CPC分类号： H01L29/0847 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7787 ,  H01L29/7835

摘要： A p-type nitride compound semiconductor layer is formed on a buffer formed on a substrate. An n-type contact region is formed by ion implantation under a source electrode and a drain electrode. An electric-field reducing layer made of an n-type nitride compound semiconductor is formed on the p-type nitride compound semiconductor layer. A carrier density of the electric-field reducing layer is lower than that of the n-type contact region. A first end portion of the electric-field reducing layer contacts with the n-type contact region, and a second end portion of the electric-field reducing layer overlaps with a gate electrode.

摘要翻译： 在形成在基板上的缓冲液上形成p型氮化物化合物半导体层。 在源电极和漏电极下通过离子注入形成n型接触区域。 在p型氮化物半导体层上形成由n型氮化物化合物半导体构成的电场减少层。 电场降低层的载流子密度低于n型接触区域的载流子密度。 电场减少层的第一端部与n型接触区域接触，并且电场减少层的第二端部与栅电极重叠。

公开(公告)号：US07998848B2

公开(公告)日：2011-08-16

申请号：US12382943

申请日：2009-03-26

申请人： Yuki Niiyama ,  Seikoh Yoshida ,  Masatoshi Ikeda, legal representative ,  Hiroshi Kambayashi ,  Takehiko Nomura

发明人： Yuki Niiyama ,  Seikoh Yoshida ,  Hiroshi Kambayashi ,  Takehiko Nomura

IPC分类号： H01L21/265

CPC分类号： H01L29/7834 ,  H01L21/26553 ,  H01L21/268 ,  H01L29/2003 ,  H01L29/66522 ,  H01L29/7835

摘要： The laser beam with a wavelength having a higher energy than the band gap energy of the material forming the carrier moving layer is irradiated to activate the impurities contained in the constituent layer of the field effect transistor in the method of producing the field effect transistor. The method of the invention does not apply the heating of the substrate or the sample stage to raise the temperature of the semiconductor layer using the thermal conductivity so as to activate the impurities. Thus, the implanted impurities can be activated without deteriorating the performance of the device and reliability.

摘要翻译： 在产生场效应晶体管的方法中，照射具有比形成载流子移动层的材料的能隙高的波长的激光束激发包含在场效应晶体管的构成层中的杂质。 本发明的方法不适用基板或样品台的加热，以提高使用导热率的半导体层的温度以激活杂质。 因此，可以在不降低器件性能和可靠性的情况下激活注入的杂质。

公开(公告)号：US20100283083A1

公开(公告)日：2010-11-11

申请号：US12308401

申请日：2007-06-14

申请人： Yuki Niiyama ,  Shinya Ootomo ,  Tatsuyuki Shinagawa ,  Takehiko Nomura ,  Seikoh Yoshida ,  Hiroshi Kambayashi

发明人： Yuki Niiyama ,  Shinya Ootomo ,  Tatsuyuki Shinagawa ,  Takehiko Nomura ,  Seikoh Yoshida ,  Hiroshi Kambayashi

IPC分类号： H01L29/78 ,  H01L21/66

CPC分类号： H01L29/7802 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/0886 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/66606 ,  H01L29/66659 ,  H01L29/78 ,  H01L29/7813 ,  H01L29/7835

摘要： Provided is a normally-off field effect transistor using a III-nitride semiconductor. The transistor is provided with a III-nitride semiconductor layer grown on a substrate by including an acceptor and a donor; a gate insulating film which is formed on the III-nitride semiconductor layer to have a thickness to be at a prescribed threshold voltage based on the concentration of the acceptor and that of the donor; a gate electrode formed on the gate insulating film; a first source/drain electrode formed on the III-nitride semiconductor layer to one side of and separate from the gate electrode, directly or via a high dopant concentration region; and a second source/drain electrode formed away from the gate electrode and the first source/drain electrode, on or under the III-nitride semiconductor layer, directly or via a high dopant concentration region.

摘要翻译： 提供了使用III族氮化物半导体的常关场效应晶体管。 晶体管设置有通过包括受体和供体在衬底上生长的III族氮化物半导体层; 基于所述受主的浓度和所述供体的浓度，形成在所述III族氮化物半导体层上的厚度为规定阈值电压的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极; 在III族氮化物半导体层上直接或经由高掺杂剂浓度区域形成在栅电极的一侧并与栅电极分离的第一源/漏电极; 以及在III族氮化物半导体层上或下方形成为远离栅电极和第一源/漏电极的第二源/漏电极，直接或经由高掺杂剂浓度区域。

公开(公告)号：US08093626B2

公开(公告)日：2012-01-10

申请号：US12308401

申请日：2007-06-14

申请人： Yuki Niiyama ,  Shinya Ootomo ,  Tatsuyuki Shinagawa ,  Takehiko Nomura ,  Seikoh Yoshida ,  Hiroshi Kambayashi

发明人： Yuki Niiyama ,  Shinya Ootomo ,  Tatsuyuki Shinagawa ,  Takehiko Nomura ,  Seikoh Yoshida ,  Hiroshi Kambayashi

IPC分类号： H01L29/78 ,  H01L21/66

CPC分类号： H01L29/7802 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/0886 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/66606 ,  H01L29/66659 ,  H01L29/78 ,  H01L29/7813 ,  H01L29/7835

摘要： Provided is a normally-off field effect transistor using a III-nitride semiconductor. The transistor is provided with a III-nitride semiconductor layer grown on a substrate by including an acceptor and a donor; a gate insulating film which is formed on the III-nitride semiconductor layer to have a thickness to be at a prescribed threshold voltage based on the concentration of the acceptor and that of the donor; a gate electrode formed on the gate insulating film; a first source/drain electrode formed on the III-nitride semiconductor layer to one side of and separate from the gate electrode, directly or via a high dopant concentration region; and a second source/drain electrode formed away from the gate electrode and the first source/drain electrode, on or under the III-nitride semiconductor layer, directly or via a high dopant concentration region.

摘要翻译： 提供了使用III族氮化物半导体的常关场效应晶体管。 晶体管设置有通过包括受体和供体在衬底上生长的III族氮化物半导体层; 基于所述受主的浓度和所述供体的浓度，形成在所述III族氮化物半导体层上的厚度为规定阈值电压的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极; 在III族氮化物半导体层上直接或经由高掺杂剂浓度区域形成在栅电极的一侧并与栅电极分离的第一源/漏电极; 以及在III族氮化物半导体层上或下方形成为远离栅电极和第一源/漏电极的第二源/漏电极，直接或经由高掺杂剂浓度区域。