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19 条记录 (耗时 0.016 秒)

    Secondary battery using nonaqueous electrolytes
    2.
    发明授权
    Secondary battery using nonaqueous electrolytes 失效
    二次电池使用非水电解质

    公开(公告)号：US4835075A

    公开(公告)日：1989-05-30

    申请号：US119134

    申请日：1987-11-10

    申请人： Yoshimitsu Tajima ,  Motoo Mohri ,  Hideaki Tanaka

    发明人： Yoshimitsu Tajima ,  Motoo Mohri ,  Hideaki Tanaka

    IPC分类号： C01B31/02 ,  H01M4/587 ,  H01M4/96 ,  H01M10/05 ,  H01M10/052 ,  H01M10/054

    CPC分类号： H01M10/05 ,  H01M4/587 ,  H01M4/96

    摘要： A secondary battery using nonaqueous electrolytes that contain a light metal as an active material, and comprising an anode, a cathode and a separator that electrically separates the anode from the cathode, wherein said anode comprises a heat-resistant porous support and a carbon material deposited on said porous support, said carbon material having the following physico-chemical properties: The mean interlayer separation of said carbon active material is in the range of 0.337 to 0.355 nm; the ratio of the Raman intensity of 1360 cm.sup.-1 to that of 1580 cm.sup.-1 with regard to the argon laser Raman spectra of said carbon material is in the range of 0.4 to 1.0; and said carbon material is mainly composed of a carbon having a six-membered ring structure with flat networks and having a selective orientation.

    摘要翻译： 一种二次电池，其使用含有轻金属作为活性材料的非水电解质，并且包括将阳极与阴极电分离的阳极，阴极和隔板，其中所述阳极包括耐热多孔载体和沉积的碳材料 在所述多孔载体上，所述碳材料具有以下物理化学性质：所述碳活性材料的平均层间分离在0.337至0.355nm的范围内; 相对于所述碳材料的氩激光拉曼光谱，1360cm -1的拉曼强度与1580cm -1的拉曼强度的比在0.4〜1.0的范围内; 并且所述碳材料主要由具有平坦网络并具有选择性取向的六元环结构的碳组成。

    Hydrogen-stored electrode for use in battery and manufacturing method
    4.
    发明授权
    Hydrogen-stored electrode for use in battery and manufacturing method 失效
    用于电池和制造方法的氢存储电极

    公开(公告)号：US4621417A

    公开(公告)日：1986-11-11

    申请号：US702608

    申请日：1985-02-19

    申请人： Motoo Mohri ,  Yoshimitsu Tajima

    发明人： Motoo Mohri ,  Yoshimitsu Tajima

    IPC分类号： H01M4/26 ,  B01J20/02 ,  H01M4/24 ,  H01M4/04 ,  C01B6/24 ,  H01M4/88

    CPC分类号： H01M4/242 ,  Y10T29/49108

    摘要： The preferred embodiment provides such a hydrogen-stored electrode extremely useful for application to the cathode of alkaline battery. It makes it possible to manufacture such a useful hydrogen-stored electrode molded into electrode form after activation of hydrogen-stored alloy by means of hydrogen generated by immersion of blends into solution, in which the blends is composed of hydrogen-stored alloy and additives that generate hydrogen through their reaction with the above solution.

    摘要翻译： 优选的实施方案提供了这样一种非常适用于碱性电池阴极的氢储存电极。 通过将共混物浸入溶液中产生的氢活化氢储存合金后，可以制造这样一种有用的储氢电极成型为电极形式，其中共混物由储氢合金和添加剂组成， 通过与上述溶液的反应产生氢气。

    DEVICE AND METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE, AND DEVICE AND METHOD FOR MANUFACTURING DISPLAY PANEL
    8.
    发明申请
    DEVICE AND METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE, AND DEVICE AND METHOD FOR MANUFACTURING DISPLAY PANEL 有权
    用于制造活性矩阵基板的装置和方法，以及用于制造显示面板的装置和方法

    公开(公告)号：US20120077408A1

    公开(公告)日：2012-03-29

    申请号：US13322826

    申请日：2010-02-16

    申请人： Yoshimitsu Tajima

    发明人： Yoshimitsu Tajima

    IPC分类号： H01J9/50

    CPC分类号： G09G3/006 ,  G01R31/025 ,  G02F1/1303 ,  G02F1/136259 ,  G09G3/3611 ,  G09G2360/147

    摘要： A device for manufacturing an active matrix substrate including a plurality of pixels arranged in a matrix, in which a short-circuit defect in the active matrix substrate is detected and repaired, includes a stage (30a) configured to place a test substrate (19) which will become the active matrix substrate, a defective pixel detector (40a) configured to input a test signal to the test substrate (19) placed on the stage (30a), and electrically detect coordinates of a defective pixel in which a short-circuit defect has occurred, and a defect position identifier (50) configured to input the test signal to the test substrate (19) placed on the stage (30a) to cause the defective pixel detected by the defective pixel detector (40a) to generate heat, and sense the heat generation in the defective pixel using far-infrared thermography, thereby identifying a position of the short-circuit defect in the defective pixel.

    摘要翻译： 一种用于制造有源矩阵基板的装置，包括：检测和修复有源矩阵基板中的短路缺陷的阵列中排列的多个像素的有源矩阵基板，包括配置成放置测试基板（19）的台（30a） 其将成为有源矩阵基板，被配置为将测试信号输入到放置在载物台（30a）上的测试基板（19）的缺陷像素检测器（40a），并且电检测其中短路的缺陷像素的坐标 发生缺陷，以及缺陷位置识别器（50），被配置为将测试信号输入到放置在台（30a）上的测试基板（19），以使由缺陷像素检测器（40a）检测到的缺陷像素产生热量， 并使用远红外热像仪感测有缺陷像素中的发热，从而识别缺陷像素中的短路缺陷的位置。

    Active matrix substrate and correcting method of structural defect thereof
    9.
    发明授权
    Active matrix substrate and correcting method of structural defect thereof 有权
    有源矩阵基板及其结构缺陷的校正方法

    公开(公告)号：US06297520B1

    公开(公告)日：2001-10-02

    申请号：US09377830

    申请日：1999-08-20

    申请人： Masumi Kubo ,  Toshihiro Yamashita ,  Yoshimitsu Tajima

    发明人： Masumi Kubo ,  Toshihiro Yamashita ,  Yoshimitsu Tajima

    IPC分类号： H01L2904

    CPC分类号： H01L27/1244 ,  G02F1/1362 ,  G02F1/136259 ,  H01L27/1214

    摘要： In an active matrix substrate having thereon a matrix of pixels each composed of a pair of a TFT and a pixel electrode, when the shorting of the pixel electrodes in adjacent pixels occurs, an electrical connection between the pixel electrode and drain electrode in the TFT of a matching pair in either of the shorted pixel electrodes is cut. For example, when the shorting of two adjacent pixels occurs, the pixel electrodes in both the pixels are driven by the TFT in the non-cut pixel. This arrangement makes it possible to make a display defect resulted from the shorting of adjacent pixels on the active matrix substrate less noticeable, and hence to upgrade display quality.

    摘要翻译： 在其上具有由一对TFT和像素电极构成的像素矩阵的有源矩阵基板中，当相邻像素中的像素电极发生短路时，TFT中的像素电极和漏电极之间的电连接 在任一个短路像素电极中的匹配对被切割。 例如，当发生两个相邻像素的短路时，两个像素中的像素电极由非切割像素中的TFT驱动。 这种布置使得可以使由于有源矩阵基板上的相邻像素的短路而导致的显示缺陷不太明显，并且因此提高显示质量。

    Method for growing a silicon carbide single crystal
    10.
    发明授权
    Method for growing a silicon carbide single crystal 失效
    生长碳化硅单晶的方法

    公开(公告)号：US5288365A

    公开(公告)日：1994-02-22

    申请号：US855376

    申请日：1992-03-20

    申请人： Katsuki Furukawa ,  Yoshimitsu Tajima ,  Akira Suzuki

    发明人： Katsuki Furukawa ,  Yoshimitsu Tajima ,  Akira Suzuki

    IPC分类号： C30B23/08 ,  C30B23/02 ,  C30B29/36 ,  H01L21/203 ,  C30B25/00

    CPC分类号： C30B23/02 ,  C30B23/002 ,  C30B29/36 ,  Y10S117/902 ,  Y10S438/931

    摘要： A method for growing a silicon carbide single crystal on a seed crystal using a molecular beam source in vacuo by means of a molecular beam epitaxy, wherein a material in the molecular beam source is silicon carbide. A silicon molecular beam source and/or an impurity molecular beam source for doping may be further used. Temperatures of the silicon carbide molecular beam source, the silicon molecular beam source, the impurity molecular beam source and the seed crystal are independently controlled. Vapor compositions are controlled by the silicon carbide molecular beam source, the silicon molecular beam source and the impurity molecular beam source.

    摘要翻译： 使用分子束源在分子束源上通过分子束外延在晶种上生长碳化硅单晶的方法，其中分子束源中的材料是碳化硅。 可以进一步使用用于掺杂的硅分子束源和/或杂质分子束源。 独立控制碳化硅分子束源，硅分子束源，杂质分子束源和晶种的温度。 蒸气成分由碳化硅分子束源，硅分子束源和杂质分子束源控制。