摘要:
An apparatus for conveying tubular members along a plurality of treatment liquid tanks in pickling facilities. The apparatus includes a pair of guide rails and a travelling car adapted to reciprocate on the guide rails. The travelling car includes at least one pair of tube-supporting hooks which can be reciprocated upwardly and downwardly and turned between positions parallel to the rails and other positions perpendicular to the rails. The tube-supporting hooks can be lowered or raised independently so as to support the tubular members aslant near the treatment liquid level in each of the treatment liquid tanks, thereby allowing immersion of the tubular members into the treatment liquid or retraction of the tubular members out of the treatment liquid without forming considerable air bubbles in the liquid. Since such bubbles are known to develop stains on the tubular members, tubular members of high surface quality can be obtained. The above apparatus also permits a smooth, simple and efficient conveyance and loading and unloading of tubular members between the treatment liquid tanks.
摘要:
An apparatus for continuously pickling the outer surfaces of hermetically plugged tubular members is described. The apparatus includes a plurality of liquid tanks which separately contain different pickling liquids and define through-holes in their respective front and rear walls on at least one common longitudinal line to permit the successive passage of the tubular members therethrough while rotating them around their respective longitudinal axes. The apparatus includes a cleaning tank and cleaning brush unit provided sequentially before the liquid tanks. The cleaning tank includes at least one ultrasonic cleaning oscillator and defines through-holes in the front and rear walls thereof for allowing said tubular members to pass through the cleaning tank and the brush unit. Since any oil, grease or dust can be completely removed by the cleaning tank and brush unit prior to pickling, it is possible to obtain tubular members having excellent outer surface quality.
摘要:
A cleaning apparatus for use in pickling facilities for tubular members such as zirconium or zirconium alloy tubes. The apparatus includes a travelling crane for conveying and loading the tubular members from one cleaning tank to another, a pair of endless wrapping connectors such as endless chains spacedly and circulatably provided in at least one tank, for example, in a first cleaning tank filled with slightly warm water below the level of its cleaning fluid, and a plurality of feed claws provided with an interval therebetween on each of the endless wrapping connectors along the length of the same so as to prevent the tubular members from contacting one another during cleaning treatment. Thus, development of stain or physical damage such as scratches or dents is eliminated or minimized. It is possible to tentatively stock the tubular members on the endless wrapping connectors so as to perform a smooth and continuous pickling and cleaning operation of such tubular members.
摘要:
A cutting and chamfering apparatus for opposite ends of a tubular member including a cutting and chamfering support for holding horizontally the member, two tables provided respectively at opposite ends of the support, and a cutting machine and chamfering machine mounted in combination on each of the tables.
摘要:
According to a semiconductor device of the present invention, a field oxide film is formed so as to cover the main surface of an SOI layer and to reach the main surface of a buried oxide film. As a result, a pMOS active region of the SOI and an nMOS active region of the SOI can be electrically isolated completely. Therefore, latchup can be prevented completely. As a result, it is possible to provide a semiconductor device using an SOI substrate which can implement high integration by eliminating reduction of the breakdown voltage between source and drain, which was a problem of a conventional SOI field effect transistor, as well as by efficiently disposing a body contact region, which hampers high integration, and a method of manufacturing the same.
摘要:
A semiconductor device in which parasitic resistance of source/drain regions can be reduced than the parasitic resistance of the drain region, and manufacturing method thereof, can be obtained. In the semiconductor device, inactivating ions are implanted only to the source region of the semiconductor layer, so as to damage the crystal near the surface of the semiconductor layer, whereby siliciding reaction is promoted. Therefore, in the source region, a titanium silicide film which is thicker can be formed.
摘要:
Generation of parasitic transistor in active layer edge is prevented, in an NMOS region of a semiconductor layer (21) on an insulating film (20), boron ions are implanted by rotary oblique injection, using a nitride film (23) and a resist (253a) as mask. In the vicinity of a region for separating element by LOCOS method, that is, only in the edge region of the semiconductor layer (21) as the active layer of NMOS transistor, boron ions are implanted by about 3.times.10.sup.13 /cm.sup.2. After LOCOS oxidation, the impurity concentration is heightened to such a level as the boron ions may not be sucked up into the oxide film.
摘要翻译:在绝缘膜(20)上的半导体层(21)的NMOS区域中,通过旋转斜射注入硼离子,使用氮化物膜(23)和抗蚀剂(...)来防止在有源层边缘中产生寄生晶体管 253a)作为掩模。 在通过LOCOS方法分离元件的区域附近,即仅在作为NMOS晶体管的有源层的半导体层(21)的边缘区域中,硼离子注入约3×10 13 / cm 2。 在LOCOS氧化之后,杂质浓度提高到这样的水平,因为硼离子不能被吸入氧化膜中。
摘要:
Disclosed herein is a process for producing a single crystal layer of a semiconductor device, which comprises the steps of providing an oxide insulator layer separated by an opening part for seeding, on a major surface of a single crystal semiconductor substrate of the cubic system, providing a polycrystalline or amorphous semiconductor layer on the entire surface of the insulator layer inclusive of the opening part, then providing a protective layer comprising at least a reflective or anti-reflection film comprising stripes of a predetermined width, in a predetermined direction relative to the opening part and at a predetermined interval, the protective layer capable of controlling the temperature distributions in the semiconductor layer at the parts corresponding to the stripes or the parts not corresponding to the stripes, thereby completing a base for producing a semiconductor device, thereafter the surface of the base is irradiated with an energy beam through the striped reflective or anti-reflection film to melt the polycrystalline or amorphous semiconductor and scanning the energy beam in a predetermined direction such that the direction of the crystal of the semiconductor re-solidified and converted into a single crystal accords with a {111} plane, to produce the single crystal of the semiconductor device. Also disclosed is a semiconductor device produced by the method, which comprises a single crystal layer having a wide range of a crystal in a predetermined direction relative to the facial orientation of the major surface of the substrate, and has a three-dimensional semiconductor circuit element construction.
摘要:
A laser beam irradiating apparatus is capable of laser annealing with high precision and uniform over the entire surface of a sample. Luminous flux of the laser beam output from a laser source is expanded by a beam expander. The power of the laser beam which has passed through the beam expander is adjusted by a half-wave plate of synthetic quarts and a polarizing prism of synthetic quarts. The laser beam emitted from polarizing prism is guided to a prescribed position by mirrors, and swung in the direction of the X-axis by an X-axis rotation mirror. The laser beam reflected from X-axis rotation mirror has its diameter reduced by a f-.theta. lens to have a prescribed beam spot diameter on the surface of a silicon wafer, and laser beam scanning is carried out at a constant speed. Since half-wave plate and the polarizing prism are formed of synthetic quarts, thermal deformation of optical components caused by continuous irradiation of laser beam can be suppressed, beam profile of the laser beam can be stabilized, therefore highly uniform and highly precise laser annealing becomes possible.
摘要:
Disclosed is an apparatus for detecting the three-dimensional configuration of an object employing an optical cutting method. A light projector pulse-flashes slit-shaped light and causes the light to scan an object at a predetermined speed. An image sensor having a plurality of pixels is disposed in opposition to the object. An optical system forms on the image sensor an image of an optical cutting line formed on the surface of the object by the light. A difference detector detects the difference between the on- and off- levels of each of pulses of the image detected by the pixels of the sensor. A time calculator calculates the time at which the image has passed each of the pixels, on the basis of the difference detected by the difference detector. A configuration calculator calculates the three-dimensional configuration of the object on the basis of the calculated passage time and the scanning speed of the slit-shaped light. Since the difference between the levels of each pulse of the image is obtained, any optical signals resulting from a factor other than the pertinent pulses, such as influence by the background of the object, or a flash can be excluded, and the configuration can be detected with a high level of precision.