公开(公告)号：US20100171119A1

公开(公告)日：2010-07-08

申请号：US12666753

申请日：2008-05-29

申请人： Yoshiyuki Nasuno ,  Yasuaki Ishikawa

发明人： Yoshiyuki Nasuno ,  Yasuaki Ishikawa

IPC分类号： H01L31/04 ,  H01L31/105 ,  H01L31/0376

CPC分类号： H01L31/202 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/076 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： To provide a stacked photoelectric conversion device capable of inhibiting extreme decrease of the output in the morning and evening.A stacked photoelectric conversion device of the present invention comprises a first photoelectric conversion layer, a second photoelectric conversion layer and a third photoelectric conversion layer stacked in this order from a light entrance side, each photoelectric conversion layer having a p-i-n junction and formed of a silicon based semiconductor, wherein a short-circuit photocurrent of the first photoelectric conversion layer is larger than a short-circuit photocurrent of the second photoelectric conversion layer or a short-circuit photocurrent of the third photoelectric conversion layer under a condition of light source: xenon lamp, irradiance: 100 mW/cm2, AM: 1.5, and temperature: 25° C.

摘要翻译： 提供能够抑制早晨和晚上输出的极度降低的层叠光电转换装置。 本发明的堆叠式光电转换装置包括从光入射侧依次堆叠的第一光电转换层，第二光电转换层和第三光电转换层，每个光电转换层具有pin结并由硅形成 所述第一光电转换层的短路光电流大于所述第二光电转换层的短路光电流或所述第三光电转换层的短路光电流在光源：氙灯 ，辐照度：100mW / cm 2，AM：1.5，温度：25℃

公开(公告)号：US08138499B2

公开(公告)日：2012-03-20

申请号：US12666753

申请日：2008-05-29

申请人： Yoshiyuki Nasuno ,  Yasuaki Ishikawa

发明人： Yoshiyuki Nasuno ,  Yasuaki Ishikawa

IPC分类号： H01L31/04 ,  H01L31/105

CPC分类号： H01L31/202 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/076 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： To provide a stacked photoelectric conversion device capable of inhibiting extreme decrease of the output in the morning and evening.A stacked photoelectric conversion device of the present invention comprises a first photoelectric conversion layer, a second photoelectric conversion layer and a third photoelectric conversion layer stacked in this order from a light entrance side, each photoelectric conversion layer having a p-i-n junction and formed of a silicon based semiconductor, wherein a short-circuit photocurrent of the first photoelectric conversion layer is larger than a short-circuit photocurrent of the second photoelectric conversion layer or a short-circuit photocurrent of the third photoelectric conversion layer under a condition of light source: xenon lamp, irradiance: 100 mW/cm2, AM: 1.5, and temperature: 25° C.

摘要翻译： 提供能够抑制早晨和晚上输出的极度降低的层叠光电转换装置。 本发明的堆叠式光电转换装置包括从光入射侧依次堆叠的第一光电转换层，第二光电转换层和第三光电转换层，每个光电转换层具有pin结并由硅形成 所述第一光电转换层的短路光电流大于所述第二光电转换层的短路光电流或所述第三光电转换层的短路光电流在光源：氙灯 ，辐照度：100mW / cm 2，AM：1.5，温度：25℃

公开(公告)号：US07915612B2

公开(公告)日：2011-03-29

申请号：US11970043

申请日：2008-01-07

申请人： Yoshiyuki Nasuno ,  Yasuaki Ishikawa ,  Takanori Nakano

发明人： Yoshiyuki Nasuno ,  Yasuaki Ishikawa ,  Takanori Nakano

IPC分类号： H01L31/061

CPC分类号： H01L31/075 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device includes a p-type layer, an i-type layer and an n-type layer each made of a silicon base semiconductor, stacked in this order, wherein the i-type layer contains n-type impurities in a concentration of 1.0×1016 to 2.0×1017 cm−3.

摘要翻译： 光电转换装置包括依次堆叠的由硅基半导体制成的p型层，i型层和n型层，其中i型层含有浓度为 1.0×1016〜2.0×1017cm-3。

公开(公告)号：US20080179702A1

公开(公告)日：2008-07-31

申请号：US11970043

申请日：2008-01-07

申请人： Yoshiyuki Nasuno ,  Yasuaki Ishikawa ,  Takanori Nakano

发明人： Yoshiyuki Nasuno ,  Yasuaki Ishikawa ,  Takanori Nakano

IPC分类号： H01L31/105 ,  H01L31/18

CPC分类号： H01L31/075 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device includes a p-type layer, an i-type layer and an n-type layer each made of a silicon base semiconductor, stacked in this order, wherein the i-type layer contains n-type impurities in a concentration of 1.0×1016 to 2.0×1017 cm−3.

摘要翻译： 光电转换装置包括依次堆叠的由硅基半导体制成的p型层，i型层和n型层，其中i型层含有浓度为 1.0×10 16至2.0×10 17 cm -3。

公开(公告)号：US08288647B2

公开(公告)日：2012-10-16

申请号：US12520918

申请日：2007-11-15

申请人： Yoshiyuki Nasuno

发明人： Yoshiyuki Nasuno

IPC分类号： H01L31/00

CPC分类号： H01L31/075 ,  H01L31/1804 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device which can improve photoelectric conversion efficiency is provided. The photoelectric conversion device has at least one p-i-n type photoelectric conversion part which includes a first conductivity type layer, a first i-type layer, a second i-type layer and a second conductivity type layer stacked in this order, and it is characterized in that a crystallization ratio of the first i-type layer is lower than that of the second i-type layer and a change rate of a crystallization ratio in a film-thickness direction at an interface between the first i-type layer and the second i-type layer is 0.013 to 0.24 nm−1.

摘要翻译： 提供了可以提高光电转换效率的光电转换装置。 光电转换装置具有至少一个pin型光电转换部件，其包括依次层叠的第一导电型层，第一i型层，第二i型层和第二导电型层，其特征在于 第一i型层的结晶比低于第二i型层的结晶化率，第一i型层和第二i型层之间的界面处的膜厚度方向的结晶化率的变化率 型层为0.013〜0.24nm-1。

公开(公告)号：US20110146773A1

公开(公告)日：2011-06-23

申请号：US13031969

申请日：2011-02-22

申请人： Kazuhito Nishimura ,  Yoshiyuki Nasuno ,  Hiroshi Yamamoto ,  Yoshitaka Sugita

发明人： Kazuhito Nishimura ,  Yoshiyuki Nasuno ,  Hiroshi Yamamoto ,  Yoshitaka Sugita

IPC分类号： H01L31/06

CPC分类号： H01L31/075 ,  Y02E10/548

摘要： A photoelectric conversion device comprising: a pin-type photoelectric conversion layer constituted of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, wherein the p-type semiconductor layer contains silicon atoms and nitrogen atoms, which is possible to improve photoelectric conversion efficiency.

摘要翻译： 一种光电转换装置，包括：由p型半导体层，i型半导体层和n型半导体层构成的pin型光电转换层，其中p型半导体层含有硅原子和氮原子， 这可以提高光电转换效率。

公开(公告)号：US20090084433A1

公开(公告)日：2009-04-02

申请号：US12238754

申请日：2008-09-26

申请人： Toru Takeda ,  Yoshiyuki Nasuno ,  Masahiro Toyokawa ,  Yusuke Fukuoka

发明人： Toru Takeda ,  Yoshiyuki Nasuno ,  Masahiro Toyokawa ,  Yusuke Fukuoka

IPC分类号： H01L31/042 ,  H01L21/00

CPC分类号： H01L31/046 ,  H01L31/02013 ,  H01L31/048 ,  H02S30/10 ,  Y02E10/50

摘要： A thin-film solar battery module comprising: a plurality of thin-film solar batteries; a supporting plate; and a frame, the thin-film solar battery having a string in which a plurality of thin-film photoelectric conversion elements, each formed by sequentially stacking a first electrode layer, a photoelectric conversion layer and a second electrode layer on a surface of an insulated substrate, are electrically connected in series, wherein the frame is attached to an outer circumference of the supporting plate in a condition that the plurality of thin-film solar batteries are arranged and fixed on the supporting plate.

摘要翻译： 一种薄膜太阳能电池模块，包括：多个薄膜太阳能电池; 支撑板; 和框架，所述薄膜太阳能电池具有多个薄膜光电转换元件的串，所述多个薄膜光电转换元件分别通过在绝缘的表面上依次层叠第一电极层，光电转换层和第二电极层而形成 基板被串联电连接，其中框架以多个薄膜太阳能电池布置并固定在支撑板上的状态附接到支撑板的外周。

公开(公告)号：US20140154415A1

公开(公告)日：2014-06-05

申请号：US14234465

申请日：2012-05-31

申请人： Atsushi Tomyo ,  Yoshiyuki Nasuno

发明人： Atsushi Tomyo ,  Yoshiyuki Nasuno

IPC分类号： C23C26/00 ,  C23C16/24

CPC分类号： C23C26/00 ,  C23C16/24 ,  C23C16/4405 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521

摘要： A method for manufacturing a silicon-containing film includes the steps of loading a substrate, depositing a silicon-containing unloading the substrate, dry cleaning, reducing fluoride and exhausting gas. In the step of reducing fluoride, a reducing gas is supplied into a chamber in such a way that a partial pressure of CF4 gas in the chamber is A×(2.0×10−4) Pa or less at the end of the step of exhausting gas.

摘要翻译： 一种含硅膜的制造方法，其特征在于，具备载置基板，沉积含有硅的卸载基板，干洗，还原氟化物和排气等的工序。 在减少氟化物的步骤中，将还原气体供给到室内，使得在排气步骤结束时室内的CF 4气体的分压为A×（2.0×10 -4）Pa以下 加油站。

公开(公告)号：US20120280242A1

公开(公告)日：2012-11-08

申请号：US13519984

申请日：2010-12-28

申请人： Yoshiyuki Nasuno ,  Kazuhito Nishimura ,  Takanori Nakano

发明人： Yoshiyuki Nasuno ,  Kazuhito Nishimura ,  Takanori Nakano

IPC分类号： H01L31/036 ,  H01L29/04

CPC分类号： H01L21/0262 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/02667 ,  H01L31/03685 ,  H01L31/0392 ,  H01L31/03921 ,  Y02E10/545 ,  Y02E10/548

摘要： There is provided a semiconductor film formed on a surface of a substrate and containing a crystalline substance, wherein the semiconductor film has a central region including a center of a surface of the semiconductor film and a peripheral region located around the central region, and a crystallization ratio in the peripheral region of the semiconductor film is higher than a crystallization ratio in the central region. There is also provided a photoelectric conversion device including the semiconductor film.

摘要翻译： 提供了形成在基板的表面上并含有结晶物质的半导体膜，其中半导体膜具有包括半导体膜的表面的中心和位于中心区周围的周边区域的中心区域， 半导体膜的外围区域的比例高于中心区域的结晶化率。 还提供了包括半导体膜的光电转换装置。

公开(公告)号：US20120042934A1

公开(公告)日：2012-02-23

申请号：US13203883

申请日：2010-03-01

申请人： Yoshiyuki Nasuno ,  Tohru Takeda

发明人： Yoshiyuki Nasuno ,  Tohru Takeda

IPC分类号： H01L31/042 ,  H01L31/18 ,  H01L31/0224 ,  H01L23/544 ,  H01L21/66

CPC分类号： H01L31/02366 ,  H01L22/12 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/046 ,  H01L31/0463 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

摘要： A laminated body, comprising: a supporting body having a concave-convex surface; and a semiconductor layer laminated on a surface of the supporting body, wherein a part of the supporting body includes a layer thickness measurement portion for optically measuring a layer thickness of the semiconductor layer, and the layer thickness measurement portion includes a reduced surface roughness region whose surface roughness is smaller than that of the concave-convex surface.

摘要翻译： 一种层叠体，包括：具有凹凸表面的支撑体; 以及层叠在所述支撑体的表面上的半导体层，其中，所述支撑体的一部分包括用于光学测量所述半导体层的层厚度的层厚测量部，并且所述层厚度测量部包括减小的表面粗糙度区域， 表面粗糙度小于凹凸表面的粗糙度。