公开(公告)号：US08611155B2

公开(公告)日：2013-12-17

申请号：US13341382

申请日：2011-12-30

申请人： Byung Ryul Kim ,  Duck Ju Kim ,  You Sung Kim

发明人： Byung Ryul Kim ,  Duck Ju Kim ,  You Sung Kim

IPC分类号： G11C11/34

CPC分类号： G11C16/3454 ,  G11C11/5628 ,  G11C16/10

摘要： Programming a semiconductor memory device includes: performing a program loop using a blind program operation until the selected cell threshold voltages reach a first verification level; upon detecting a cell having the threshold voltage reaching the first verification level, verifying whether a cell having the threshold voltage reached a second verification level higher than the first verification level; upon verifying a cell having the threshold voltage reaching the second verification level, continuously performing program loops on cells having the first verification level as a target level and on cells having the second verification level as a target level; and upon verifying no cell having the threshold voltage reaching the second verification level, performing a program loop on memory cells having a target level higher than the first verification level, after programming the memory cells having the first verification level as the target level.

摘要翻译： 编程半导体存储器件包括：使用盲目程序操作执行程序循环，直到所选择的单元阈值电压达到第一验证水平; 一旦检测到阈值电压达到第一验证电平的单元，则验证具有阈值电压的单元是否达到高于第一验证电平的第二验证电平; 在验证具有阈值电压达到第二验证电平的单元的情况下，对具有第一验证电平的单元作为目标电平，以及具有第二验证电平的单元作为目标电平连续执行程序循环; 并且在验证没有阈值电压达到第二验证电平的单元时，在将具有第一验证电平的存储单元编程为目标电平之后，对具有高于第一验证电平的目标电平的存储单元执行程序循环。

公开(公告)号：US20090027966A1

公开(公告)日：2009-01-29

申请号：US12119405

申请日：2008-05-12

申请人： You Sung KIM ,  Duck Ju Kim

发明人： You Sung KIM ,  Duck Ju Kim

IPC分类号： G11C11/34

CPC分类号： G11C8/10 ,  G11C16/04 ,  G11C29/785 ,  G11C29/82 ,  G11C29/88

摘要： A bad block address of a flash memory device is stored through a fuse circuit and then compared with an input address in order to disable bad blocks. The flash memory device includes a bad block information unit for storing an address of a bad block, a comparator for comparing an input address including a memory block address and the address of the bad block stored in the bad block information unit, and for outputting a first control signal according to the comparison result, and an address counter for outputting a second control signal to enable or disable a memory block corresponding to the memory block address in response to the first control signal.

摘要翻译： 闪存器件的坏块地址通过熔丝电路存储，然后与输入地址进行比较，以便禁用坏块。 闪速存储装置包括：坏块信息单元，用于存储坏块的地址;比较器，用于比较包含存储块地址的输入地址和存储在坏块信息单元中的坏块的地址，并输出 根据比较结果的第一控制信号和用于输出第二控制信号以响应于第一控制信号启用或禁用与存储器块地址相对应的存储器块的地址计数器。

公开(公告)号：US20080175059A1

公开(公告)日：2008-07-24

申请号：US11962060

申请日：2007-12-20

申请人： You Sung Kim ,  Duck Ju Kim

发明人： You Sung Kim ,  Duck Ju Kim

IPC分类号： G11C16/06

CPC分类号： G11C16/10 ,  G11C11/5642

摘要： A method of performing a read operation in a flash memory device is disclosed. The flash memory has a memory cell array including at least one block, the block having a plurality of pages. The method comprises receiving a read command to read data from a selected page in the block; determining whether or not the block has any page that has not been programmed; performing a dummy data program operation on at least one page that is determined not to have been programmed; and executing the read command to read the data of the selected page after the dummy data program operation is completed.

摘要翻译： 公开了一种在闪速存储器件中执行读取操作的方法。 闪速存储器具有包括至少一个块的存储单元阵列，该块具有多个页。 该方法包括接收读取命令以从块中的所选页面读取数据; 确定块是否具有尚未被编程的任何页面; 在确定不被编程的至少一个页面上执行伪数据程序操作; 并且在完成虚拟数据编程操作之后执行读取命令以读取所选择的页面的数据。

公开(公告)号：US08199583B2

公开(公告)日：2012-06-12

申请号：US12702213

申请日：2010-02-08

申请人： You Sung Kim ,  Duck Ju Kim

发明人： You Sung Kim ,  Duck Ju Kim

IPC分类号： G11C16/06

CPC分类号： G11C16/10 ,  G11C11/5642

摘要： A method of performing a read operation in a flash memory device is disclosed. The flash memory has a memory cell array including at least one block, the block having a plurality of pages. The method comprises receiving a read command to read data from a selected page in the block; determining whether or not the block has any page that has not been programmed; performing a dummy data program operation on at least one page that is determined not to have been programmed; and executing the read command to read the data of the selected page after the dummy data program operation is completed.

摘要翻译： 公开了一种在闪速存储器件中执行读取操作的方法。 闪速存储器具有包括至少一个块的存储单元阵列，该块具有多个页。 该方法包括接收读取命令以从块中的所选页面读取数据; 确定块是否具有尚未被编程的任何页面; 在确定不被编程的至少一个页面上执行伪数据程序操作; 并且在完成虚拟数据编程操作之后执行读取命令以读取所选择的页面的数据。

公开(公告)号：US08068368B2

公开(公告)日：2011-11-29

申请号：US12702199

申请日：2010-02-08

申请人： You Sung Kim ,  Duck Ju Kim

发明人： You Sung Kim ,  Duck Ju Kim

IPC分类号： G11C16/06

CPC分类号： G11C16/10 ,  G11C11/5642

摘要： A method of performing a read operation in a flash memory device is disclosed. The flash memory has a memory cell array including at least one block, the block having a plurality of pages. The method comprises receiving a read command to read data from a selected page in the block; determining whether or not the block has any page that has not been programmed; performing a dummy data program operation on at least one page that is determined not to have been programmed; and executing the read command to read the data of the selected page after the dummy data program operation is completed.

摘要翻译： 公开了一种在闪速存储器件中执行读取操作的方法。 闪速存储器具有包括至少一个块的存储单元阵列，该块具有多个页。 该方法包括接收读取命令以从块中的所选页面读取数据; 确定块是否具有尚未被编程的任何页面; 在确定不被编程的至少一个页面上执行伪数据程序操作; 并且在完成虚拟数据编程操作之后执行读取命令以读取所选择的页面的数据。

公开(公告)号：US08036042B2

公开(公告)日：2011-10-11

申请号：US12650740

申请日：2009-12-31

申请人： Byung Ryul Kim ,  Duck Ju Kim ,  You Sung Kim ,  Se Chun Park

发明人： Byung Ryul Kim ,  Duck Ju Kim ,  You Sung Kim ,  Se Chun Park

IPC分类号： G11C16/06

CPC分类号： G11C16/3404 ,  G11C16/04

摘要： A method of operating a nonvolatile memory device includes performing a reset operation for setting a level of a program voltage to a first level, performing a program operation and a verification operation on memory cells included in a first page of a first memory block while raising the program voltage from the first level, storing a level of the program voltage, supplied to the first page when memory cells programmed to have threshold voltages with at least a verification voltage are detected during the verification operation, as a second level, while raising the program voltage from the second level, performing the program operation and the verification operation on each of second to last pages of the first memory block, and after completing the program operation for the first memory block, performing the reset operation for setting the level of the program voltage to the first level.

摘要翻译： 一种操作非易失性存储器件的方法包括执行用于将程序电压的电平设置为第一电平的复位操作，对包括在第一存储块的第一页中的存储器单元执行编程操作和验证操作，同时提高 当在验证操作期间检测到被编程为具有至少具有验证电压的阈值电压的存储单元时，提供给第一页的程序电压电平作为第二电平，同时提高程序 电压从第二电平开始，对第一存储块的第二至第二页中的每一个执行编程操作和验证操作，并且在完成第一存储器块的编程操作之后，执行用于设置程序电平的复位操作 电压到第一级。

公开(公告)号：US20100302864A1

公开(公告)日：2010-12-02

申请号：US12650740

申请日：2009-12-31

申请人： Byung Ryul KIM ,  Duck Ju Kim ,  You Sung Kim ,  Se Chun Park

发明人： Byung Ryul KIM ,  Duck Ju Kim ,  You Sung Kim ,  Se Chun Park

IPC分类号： G11C16/06 ,  G11C16/04

CPC分类号： G11C16/3404 ,  G11C16/04

摘要： A method of operating a nonvolatile memory device includes performing a reset operation for setting a level of a program voltage to a first level, performing a program operation and a verification operation on memory cells included in a first page of a first memory block while raising the program voltage from the first level, storing a level of the program voltage, supplied to the first page when memory cells programmed to have threshold voltages with at least a verification voltage are detected during the verification operation, as a second level, while raising the program voltage from the second level, performing the program operation and the verification operation on each of second to last pages of the first memory block, and after completing the program operation for the first memory block, performing the reset operation for setting the level of the program voltage to the first level.

摘要翻译： 一种操作非易失性存储器件的方法包括执行用于将程序电压的电平设置为第一电平的复位操作，对包括在第一存储块的第一页中的存储器单元执行编程操作和验证操作，同时提高 当在验证操作期间检测到被编程为具有至少具有验证电压的阈值电压的存储单元时，提供给第一页的程序电压电平作为第二电平，同时提高程序 电压从第二电平开始，对第一存储块的第二至第二页中的每一个执行编程操作和验证操作，并且在完成第一存储器块的编程操作之后，执行用于设置程序电平的复位操作 电压到第一级。

公开(公告)号：US20090161425A1

公开(公告)日：2009-06-25

申请号：US12138287

申请日：2008-06-12

申请人： Byung Ryul KIM ,  Duck Ju Kim ,  You Sung Kim ,  Sam Kyu Won

发明人： Byung Ryul KIM ,  Duck Ju Kim ,  You Sung Kim ,  Sam Kyu Won

IPC分类号： G11C16/06

CPC分类号： G11C16/26

摘要： In a method of determining a flag state of a non-volatile memory device, an arithmetic logic unit of a microcontroller is employed without an additional circuit. The method includes providing n flag state information about n flag cells, resetting an entire flag state information value, sequentially reading first to n flag state information, increasing the entire flag state information value depending on a read result of the first to n flag state information, and determining a flag state by comparing the entire flag state information value and a critical value.

摘要翻译： 在确定非易失性存储器件的标志状态的方法中，使用微控制器的算术逻辑单元而没有附加电路。 该方法包括提供关于n个标志单元的n个标志状态信息，重置整个标志状态信息值，依次读取n个标志状态信息，根据第一至第n标志状态信息的读取结果增加整个标志状态信息值 并且通过比较整个标志状态信息值和临界值来确定标志状态。

公开(公告)号：US08107291B2

公开(公告)日：2012-01-31

申请号：US12702205

申请日：2010-02-08

申请人： You Sung Kim ,  Duck Ju Kim

发明人： You Sung Kim ,  Duck Ju Kim

IPC分类号： G11C16/04

CPC分类号： G11C16/10 ,  G11C11/5642

摘要： A method of programming data in a flash memory device is disclosed. The memory device includes a memory cell array which in turn includes at least one block, and the block in turn includes a plurality of pages. A program command to program a plurality of pages in the block is received. The plurality of pages is programmed in a predefined order. An address corresponding to a page that was programmed last amongst the plurality of pages is stored.

摘要翻译： 公开了一种在闪速存储器件中编程数据的方法。 存储器件包括存储单元阵列，该存储单元阵列又包括至少一个块，并且该块又包括多个页。 接收用于对块中的多个页面进行编程的程序命令。 多个页面以预定义的顺序被编程。 存储与多个页面中最后编程的页面相对应的地址。

公开(公告)号：US20100135076A1

公开(公告)日：2010-06-03

申请号：US12702199

申请日：2010-02-08

申请人： You Sung Kim ,  Duck Ju Kim

发明人： You Sung Kim ,  Duck Ju Kim

IPC分类号： G11C16/06

CPC分类号： G11C16/10 ,  G11C11/5642

摘要： A method of performing a read operation in a flash memory device is disclosed. The flash memory has a memory cell array including at least one block, the block having a plurality of pages. The method comprises receiving a read command to read data from a selected page in the block; determining whether or not the block has any page that has not been programmed; performing a dummy data program operation on at least one page that is determined not to have been programmed; and executing the read command to read the data of the selected page after the dummy data program operation is completed.

摘要翻译： 公开了一种在闪速存储器件中执行读取操作的方法。 闪速存储器具有包括至少一个块的存储单元阵列，该块具有多个页。 该方法包括接收读取命令以从块中的所选页面读取数据; 确定块是否具有尚未被编程的任何页面; 在确定不被编程的至少一个页面上执行伪数据程序操作; 并且在完成虚拟数据编程操作之后执行读取命令以读取所选择的页面的数据。