METHOD AND HANDLING APPARATUS FOR PLACING PATTERNING DEVICE ON SUPPORT MEMBER FOR CHARGED PARTICLE BEAM IMAGING
    1.
    发明申请
    METHOD AND HANDLING APPARATUS FOR PLACING PATTERNING DEVICE ON SUPPORT MEMBER FOR CHARGED PARTICLE BEAM IMAGING 有权
    用于放置装载成像装置的装载装置的方法和处理装置

    公开(公告)号:US20100090107A1

    公开(公告)日:2010-04-15

    申请号:US12249640

    申请日:2008-10-10

    IPC分类号: G21K5/10 G01N23/00

    CPC分类号: H01L21/68707 H01J2237/204

    摘要: A patterning device handling apparatus for use in charged particle beam imaging is disclosed. The disclosed patterning device handling apparatus comprises a first gripping member and a second gripping member. The first gripping member is equipped with a plurality of first positioning projections, and the second gripping member is equipped with a plurality of second positioning projections. When the patterning device is held at one angle, the first positioning projections abut against one edge of the patterning device and the second positioning projections abut against the opposite edge of the patterning device. When the patterning device is held at another angle, the first positioning projections abut against two neighboring edges of the patterning device, and the second positioning projections abut against the other two neighboring edges of the patterning device. Therefore, the disclosed patterning device handling apparatus can hold the pattering device at different angles.

    摘要翻译: 公开了一种用于带电粒子束成像的图案形成装置处理装置。 所公开的图案形成装置处理装置包括第一夹持构件和第二夹持构件。 第一夹持构件配备有多个第一定位突起,并且第二夹持构件配备有多个第二定位突起。 当图案形成装置保持一角度时,第一定位突起抵靠图案形成装置的一个边缘,并且第二定位突起抵靠图案形成装置的相对边缘。 当图案形成装置保持在另一个角度时,第一定位突起邻接图案形成装置的两个相邻边缘,并且第二定位突起抵靠图案形成装置的另外两个相邻的边缘。 因此,所公开的图案形成装置处理装置可以以不同的角度保持图案装置。

    STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK
    2.
    发明申请
    STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK 有权
    用于排放超极本超薄膜的结构

    公开(公告)号:US20120292509A1

    公开(公告)日:2012-11-22

    申请号:US13112536

    申请日:2011-05-20

    IPC分类号: H01J37/26 H05F3/02

    摘要: A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.

    摘要翻译: 提供一种用于放电极紫外线掩模(EUV掩模)的结构,用于通过电子束检查工具在检查期间对EUV掩模进行放电。 用于放电EUV掩模的结构包括至少一个接触引脚以接触EUV掩模上的导电区域,其中EUV掩模可以在侧壁或/或底部上具有另外的导电层。 通过使用电子束检查系统来增强EUV掩模的检查质量,因为EUU掩模上的累积充电是接地的。

    E-BEAM DEFECT REVIEW SYSTEM
    4.
    发明申请
    E-BEAM DEFECT REVIEW SYSTEM 有权
    电子束缺陷评估系统

    公开(公告)号:US20100150429A1

    公开(公告)日:2010-06-17

    申请号:US12335458

    申请日:2008-12-15

    IPC分类号: G06K9/00

    摘要: The present invention relates to a defect review system, and/or particularly, to an apparatus and method of defect review sampling, review method and classification on a semiconductor wafer or a pattern lithography reticle during integrated circuit fabrication. These objects are achieved in comparing a reviewed image with a reference image pick-up through a smart sampling filter. A clustering computer system base on high speed network will provide data cache and save operation time and memory. A smart review sampling filter automatically relocate abnormal pattern or defects and classify the device location extracted from design database and/or from golden die image on the same substrate. The column of the present defect review system is comprised of the modified SORIL type objective lens. This column provides solution of improving throughput during sample review, material identification better image quality, and topography image of defect. One embodiment of the present invent adopts an optical auto focusing system to compromise micro height variation due wafer surface topography. And another embodiment adopts surface charge control system to regulate the charge accumulation due to electron irradiation during the review process.

    摘要翻译: 本发明涉及一种缺陷评估系统,和/或特别涉及在集成电路制造期间对半导体晶片或图案光刻掩模版进行缺陷评估抽样,评估方法和分类的装置和方法。 通过智能采样滤波器将经检查的图像与参考图像拾取进行比较,实现了这些目的。 基于高速网络的集群计算机系统将提供数据缓存,节省操作时间和内存。 智能检查采样过滤器自动重新定位异常模式或缺陷,并将从设计数据库中提取的设备位置和/或从相同基板上的金色模具图像分类。 本缺陷检查系统的列由改进的SORIL型物镜组成。 该栏提供了在样本审查期间提高吞吐量,材料识别更好的图像质量和缺陷的地形图像的解决方案。 本发明的一个实施例采用光学自动聚焦系统来破坏由晶片表面形貌引起的微高度变化。 另一个实施例采用表面电荷控制系统来调节在检查过程中由电子辐射引起的电荷累积。