公开(公告)号：US07494760B2

公开(公告)日：2009-02-24

申请号：US11806626

申请日：2007-06-01

申请人： Youichi Ohsawa ,  Katsuya Takemura ,  Akihiro Seki

发明人： Youichi Ohsawa ,  Katsuya Takemura ,  Akihiro Seki

IPC分类号： G03F7/004 ,  G03F7/30 ,  C07C249/04 ,  C07C251/32

CPC分类号： G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/40 ,  Y10S430/106 ,  Y10S430/111

摘要： A photoacid generator has formula (1) wherein R is H, F, Cl, nitro, alkyl or alkoxy, n is 0 or 1, m is 1 or 2, r is an integer of 0-4, and r′ is an integer of 0-5. A chemically amplified resist composition comprising the photoacid generator has advantages including a high resolution, focus latitude, long-term PED dimensional stability, and a satisfactory pattern profile shape. When the photoacid generator is combined with a resin having acid labile groups other than those of the acetal type, resolution and top loss are improved. The composition is suited for deep UV lithography.

摘要翻译： 光酸产生剂具有式（1）其中R为H，F，Cl，硝基，烷基或烷氧基，n为0或1，m为1或2，r为0-4的整数，r'为整数 的0-5。 包含光致酸发生器的化学放大抗蚀剂组合物具有包括高分辨率，聚焦纬度，长期PED尺寸稳定性和令人满意的图案轮廓形状的优点。 当光酸产生剂与具有不同于缩醛类型的酸不稳定基团的树脂组合时，分辨率和顶部损失得到改善。 该组合物适用于深紫外光刻。

公开(公告)号：US20070287096A1

公开(公告)日：2007-12-13

申请号：US11806626

申请日：2007-06-01

申请人： Youichi Ohsawa ,  Katsuya Takemura ,  Akihiro Seki

发明人： Youichi Ohsawa ,  Katsuya Takemura ,  Akihiro Seki

IPC分类号： G03C1/00

CPC分类号： G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/40 ,  Y10S430/106 ,  Y10S430/111

摘要： A photoacid generator has formula (1) wherein R is H, F, Cl, nitro, alkyl or alkoxy, n is 0 or 1, m is 1 or 2, r is an integer of 0-4, and r′ is an integer of 0-5. A chemically amplified resist composition comprising the photoacid generator has advantages including a high resolution, focus latitude, long-term PED dimensional stability, and a satisfactory pattern profile shape. When the photoacid generator is combined with a resin having acid labile groups other than those of the acetal type, resolution and top loss are improved. The composition is suited for deep UV lithography.

摘要翻译： 光酸产生剂具有式（1）其中R为H，F，Cl，硝基，烷基或烷氧基，n为0或1，m为1或2，r为0-4的整数，r'为整数 的0-5。 包含光致酸发生器的化学放大抗蚀剂组合物具有包括高分辨率，聚焦纬度，长期PED尺寸稳定性和令人满意的图案轮廓形状的优点。 当光酸产生剂与具有不同于缩醛类型的酸不稳定基团的树脂组合时，分辨率和顶部损失得到改善。 该组合物适用于深紫外光刻。

公开(公告)号：US06395446B1

公开(公告)日：2002-05-28

申请号：US09680481

申请日：2000-10-05

申请人： Akihiro Seki ,  Katsuya Takemura ,  Youichi Ohsawa ,  Jun Watanabe ,  Shigehiro Nagura

发明人： Akihiro Seki ,  Katsuya Takemura ,  Youichi Ohsawa ,  Jun Watanabe ,  Shigehiro Nagura

IPC分类号： G03F7004

CPC分类号： G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/168 ,  Y10S430/106

摘要： A chemical amplification type resist composition contains as a photoacid generator a sulfonyldiazomethane compound of the formula (1): wherein R1 is C1-10 alkyl or C6-14 aryl, R2 is C1-6 alkyl, G is SO2 or CO, R3 is C1-10 alkyl or C6-14 aryl, p is an integer of 0 to 4, q is an integer of 1 to 5, 1≦p+q≦5, n is 1 or 2, m is 0 or 1, and n+m=2. The composition is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.

公开(公告)号：US20060073413A1

公开(公告)日：2006-04-06

申请号：US11242270

申请日：2005-10-04

申请人： Katsuya Takemura ,  Kazumi Noda ,  Youichi Ohsawa

发明人： Katsuya Takemura ,  Kazumi Noda ,  Youichi Ohsawa

IPC分类号： G03C1/76

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126

摘要： A resist composition is provided comprising a polysiloxane, a specific acid generator, a nitrogen-containing organic compound, and a solvent. The resist composition exerts high-resolution performance without the problem of a T-top profile and is suited for the bilayer resist process using ArF exposure.

公开(公告)号：US5847218A

公开(公告)日：1998-12-08

申请号：US811530

申请日：1997-03-04

申请人： Youichi Ohsawa ,  Satoshi Watanabe ,  Junji Shimada ,  Katsuya Takemura ,  Shigehiro Nagura ,  Toshinobu Ishihara

发明人： Youichi Ohsawa ,  Satoshi Watanabe ,  Junji Shimada ,  Katsuya Takemura ,  Shigehiro Nagura ,  Toshinobu Ishihara

IPC分类号： C07C381/12 ,  G03F7/004 ,  G03F7/029 ,  G03F7/039 ,  H01L21/027 ,  C07C211/44

CPC分类号： C07C381/12 ,  G03F7/0045

摘要： The invention provides a novel sulfonium salt having a substituted or unsubstituted arylsulfonate anion. The novel sulfonium salt minimizes the influence of deactivation by basic compounds not only at a resist surface, but also at a resist-substrate interface, assists a resist to be configured to a definite pattern profile. When the sulfonium salt has an acid labile group, it is effective for increasing the dissolution contrast between exposed and unexposed areas. The sulfonium salt is useful in a chemically amplified positive resist composition which lends itself to fine patterning and features high resolution.

摘要翻译： 本发明提供了具有取代或未取代的芳基磺酸根阴离子的新型锍盐。 新型锍盐不仅在抗蚀剂表面，而且在抗蚀剂 - 基材界面处，使碱性化合物失活的影响最小化，有助于将抗蚀剂配置成确定的图案轮廓。 当锍盐具有酸不稳定基团时，对于增加暴露区域和未暴露区域之间的溶解度对比度是有效的。 锍盐可用于化学放大的正性抗蚀剂组合物，其具有精细的图案化并具有高分辨率。

公开(公告)号：US5569784A

公开(公告)日：1996-10-29

申请号：US379987

申请日：1995-01-27

申请人： Satoshi Watanabe ,  Junji Shimada ,  Youichi Ohsawa ,  Katsuya Takemura ,  Toshinobu Ishihara ,  Kazumasa Maruyama

发明人： Satoshi Watanabe ,  Junji Shimada ,  Youichi Ohsawa ,  Katsuya Takemura ,  Toshinobu Ishihara ,  Kazumasa Maruyama

IPC分类号： C07C381/12 ,  G03F7/004 ,  G03F7/039 ,  C07C217/48

CPC分类号： C07C381/12 ,  G03F7/0045 ,  G03F7/039

摘要： A novel sulfonium salt having at least one substituted aromatic group having acid labile groups and at least one nitrogenous aromatic group is provided. A chemically amplified, positive resist composition comprising the sulfonium salt as well as an alkali soluble resin and a dissolution inhibitor in an organic solvent has solved the PED problem.

摘要翻译： 提供具有至少一个具有酸不稳定基团和至少一个含氮芳族基团的取代芳族基团的新型锍盐。 在有机溶剂中包含锍盐以及碱溶性树脂和溶解抑制剂的化学增幅阳性抗蚀剂组合物解决了PED问题。

公开(公告)号：US07510816B2

公开(公告)日：2009-03-31

申请号：US11242270

申请日：2005-10-04

申请人： Katsuya Takemura ,  Kazumi Noda ,  Youichi Ohsawa

发明人： Katsuya Takemura ,  Kazumi Noda ,  Youichi Ohsawa

IPC分类号： G03C1/73 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126

摘要： A resist composition is provided comprising a polysiloxane, a specific acid generator, a nitrogen-containing organic compound, and a solvent. The resist composition exerts high-resolution performance without the problem of a T-top profile and is suited for the bilayer resist process using ArF exposure.

摘要翻译： 提供了包含聚硅氧烷，特定酸产生剂，含氮有机化合物和溶剂的抗蚀剂组合物。 抗蚀剂组合物具有高分辨率的性能，而不存在T形顶部轮廓的问题，并且适用于使用ArF曝光的双层抗蚀剂工艺。

公开(公告)号：US5691112A

公开(公告)日：1997-11-25

申请号：US762861

申请日：1996-12-10

申请人： Satoshi Watanabe ,  Youichi Ohsawa ,  Toshinobu Ishihara ,  Kazumasa Maruyama ,  Yoshihumi Takeda ,  Junji Shimada ,  Fujio Yagihashi ,  Katsuya Takemura

发明人： Satoshi Watanabe ,  Youichi Ohsawa ,  Toshinobu Ishihara ,  Kazumasa Maruyama ,  Yoshihumi Takeda ,  Junji Shimada ,  Fujio Yagihashi ,  Katsuya Takemura

IPC分类号： C07C317/22 ,  C07C381/12 ,  G03F7/004

CPC分类号： G03F7/0045 ,  C07C317/22 ,  C07C381/12

摘要： Trifluoromethanesulfonic and p-toluenesulfonic acid bis- or tris(p-tert-butoxyphenyl)sulfonium salts are novel. They are prepared from bis(p-tert-butoxyphenyl)sulfoxide which is also novel. A chemically amplified positive resist composition which contains the sulfonium salt as a photo-acid generator is highly sensitive to deep-UV rays, electron beams and X-rays, can be developed with alkaline aqueous solution to form a pattern, and is thus suitable for use in a fine patterning technique.

摘要翻译： 三氟甲磺酸和对甲苯磺酸双或三（对叔丁氧基苯基）锍盐是新颖的。 它们由双（对叔丁氧基苯基）亚砜制备，也是新的。 含有锍盐作为光酸发生剂的化学增幅正性抗蚀剂组合物对深紫外线，电子束和X射线高度敏感，可以用碱性水溶液显影形成图案，因此适用于 使用精细图案化技术。

公开(公告)号：US5633409A

公开(公告)日：1997-05-27

申请号：US379986

申请日：1995-01-27

申请人： Satoshi Watanabe ,  Youichi Ohsawa ,  Toshinobu Ishihara ,  Kazumasa Maruyama ,  Yoshihumi Takeda ,  Junji Shimada ,  Fujio Yagihashi ,  Katsuya Takemura

发明人： Satoshi Watanabe ,  Youichi Ohsawa ,  Toshinobu Ishihara ,  Kazumasa Maruyama ,  Yoshihumi Takeda ,  Junji Shimada ,  Fujio Yagihashi ,  Katsuya Takemura

IPC分类号： C07C317/22 ,  C07C381/12 ,  G03F7/004 ,  C07C319/00

CPC分类号： G03F7/0045 ,  C07C317/22 ,  C07C381/12

摘要： Trifluoromethanesulfonic and p-toluenesulfonic acid bis- or tris(p-tert-butoxyphenyl)sulfonium salts are novel. They are prepared from bis(p-tert-butoxyphenyl)sulfoxide which is also novel. A chemically amplified positive resist composition which contains the sulfonium salt as a photo-acid generator is highly sensitive to deep-UV rays, electron beams and X-rays, can be developed with alkaline aqueous solution to form a pattern, and is thus suitable for use in a fine patterning technique.

摘要翻译： 三氟甲磺酸和对甲苯磺酸双或三（对叔丁氧基苯基）锍盐是新颖的。 它们由双（对叔丁氧基苯基）亚砜制备，也是新的。 含有锍盐作为光酸发生剂的化学增幅正性抗蚀剂组合物对深紫外线，电子束和X射线高度敏感，可以用碱性水溶液显影形成图案，因此适用于 使用精细图案化技术。

公开(公告)号：US06916591B2

公开(公告)日：2005-07-12

申请号：US10393006

申请日：2003-03-21

申请人： Youichi Ohsawa ,  Katsuhiro Kobayashi ,  Katsuya Takemura ,  Junji Tsuchiya ,  Kazunori Maeda

发明人： Youichi Ohsawa ,  Katsuhiro Kobayashi ,  Katsuya Takemura ,  Junji Tsuchiya ,  Kazunori Maeda

IPC分类号： C07C309/75 ,  C07D333/36 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/30

CPC分类号： G03F7/0382 ,  C07C309/75 ,  C07D333/36 ,  G03F7/0045 ,  G03F7/0392 ,  Y10S430/106 ,  Y10S430/111

摘要： Photoacid generators are provided by O-arylsulfonyl-oxime compounds having formula (1) wherein R is H, F, Cl, NO2, alkyl or alkoxy, n is 0 or 1, m is 1 or 2, r is 0 to 4, r′ is 0 to 5, k is 0 to 4, and G′ and G″ are S or —CH═CH—. Chemically amplified resist compositions comprising the photoacid generators have many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, and improved pattern profile after development. Because of high resolution, the compositions are suited for microfabrication, especially by deep UV lithography.

摘要翻译： 光生酸发生剂由具有式（1）的O-芳基磺酰基 - 肟化合物提供，其中R是H，F，Cl，NO 2，烷基或烷氧基，n是0或1，m是1或2 r为0〜4，r'为0〜5，k为0〜4，G'，G“为S或-CH-CH-。 包含光酸产生剂的化学放大抗蚀剂组合物具有许多优点，包括改进的分辨率，改善的聚焦纬度，最小化的线宽变化或即使在长期PED下的形状退化，以及显影后的改进的图案分布。 由于高分辨率，组合物适用于微细加工，特别是通过深紫外光刻。