公开(公告)号：US20050103259A1

公开(公告)日：2005-05-19

申请号：US10805790

申请日：2004-03-22

申请人： Young-Churl Bang ,  Eun-Hwa Lee ,  Hyeon-Soo Kim ,  Jung-Kee Lee ,  Jun-Youn Kim

发明人： Young-Churl Bang ,  Eun-Hwa Lee ,  Hyeon-Soo Kim ,  Jung-Kee Lee ,  Jun-Youn Kim

IPC分类号： H01L21/205 ,  C30B25/04 ,  C30B29/40 ,  H01L21/20 ,  H01S5/323 ,  C30B23/00 ,  C30B28/14

CPC分类号： C30B29/40 ,  C30B25/04 ,  H01L21/02392 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639

摘要： A method of growing a semiconductor layer in a selective area by Metal Organic Chemical Vapor Deposition (MOCVD) and a mask pattern for s ame, includes a first mask pattern and a second mask pattern that are formed on a semiconductor substrate having a (100) crystalline plane. The first mask pattern has a first window wider than the selective area and a second mask pattern has a second window and a third window. The second window is defined by spacing the second mask pattern from the first mask pattern, in correspondence with a blocking area for blocking the surface migration of III-group semiconductor source gases at edges of the first window. The third window is as wide as the selective area. The semiconductor layer is grown by MOCVD on the semiconductor substrate exposed by the second and third windows. Trenches can be etched in the second and third windows and growth layers extend from the trench beyond the surface of the InP to block gas dispersion.

摘要翻译： 通过金属有机化学气相沉积（MOCVD）和掩模图案生长半导体层的选择区域的方法包括形成在具有（100）的半导体衬底的半导体衬底上的第一掩模图案和第二掩模图案， 晶面。 第一掩模图案具有比选择区域宽的第一窗口，第二掩模图案具有第二窗口和第三窗口。 第二窗口是通过将第二掩模图案与第一掩模图案间隔开来定义的，与用于阻挡第一窗口边缘处的III族半导体源气体的表面迁移的阻挡区域相对应。 第三个窗口与选择区域一样宽。 通过MOCVD在由第二和第三窗口暴露的半导体衬底上生长半导体层。 可以在第二和第三窗口中蚀刻沟槽，并且生长层从沟槽延伸超过InP的表面到阻挡气体分散体。

公开(公告)号：US20050157766A1

公开(公告)日：2005-07-21

申请号：US10864059

申请日：2004-06-09

申请人： Hyeon-Soo Kim ,  Young-Churl Bang ,  Jung-Kee Lee ,  Eun-Hwa Lee ,  Jun-Youn Kim

发明人： Hyeon-Soo Kim ,  Young-Churl Bang ,  Jung-Kee Lee ,  Eun-Hwa Lee ,  Jun-Youn Kim

IPC分类号： H01S5/026 ,  G02B6/122 ,  G02B6/14 ,  H01S5/00 ,  H01S5/10 ,  H01S5/223 ,  H01S5/50

CPC分类号： G02B6/1228 ,  H01S5/1014 ,  H01S5/1025 ,  H01S5/1064 ,  H01S5/2231 ,  H01S5/50

摘要： A semiconductor optical device including an SSC region includes a semiconductor substrate, a lower clad layer grown on the semiconductor substrate, and an upper clad layer grown on the lower clad layer. The semiconductor optical device with an SSC (Spot Size Conversion) area includes a gain area including an active layer grown between the lower clad layer and the upper clad layer to generate/amplify an optical signal; and an SSC (Spot Size Conversion) area including a waveguide layer extended from the active layer positioned between the lower and upper clad layers, such that it performs a spot size conversion (SSC) process of the optical signal generated from the gain area and generates the SSC-processed optical signal. The waveguide layer of the SSC area is configured to gradually reduce its thickness in proportion to a distance from the active layer, and the upper clad layer is etched in the form of a taper structure such that the taper structure has a narrower width in proportion to a distance from one end of the semiconductor optical device having the gain area to the other end of the semiconductor optical device having the SSC area.

摘要翻译： 包括SSC区域的半导体光学器件包括半导体衬底，在半导体衬底上生长的下覆盖层和在下包层上生长的上覆层。 具有SSC（点尺寸转换）区域的半导体光学器件包括增益区域，包括在下包层和上覆层之间生长的有源层，以产生/放大光信号; 和SSC（点尺寸转换）区域，包括从位于下包层和上包层之间的有源层延伸的波导层，使得其执行从增益区域产生的光信号的光斑尺寸转换（SSC）处理，并产生 经SSC处理的光信号。 SSC区域的波导层被配置成与有源层的距离成比例地逐渐减小其厚度，并且上部包层以锥形结构的形式被蚀刻，使得锥形结构具有与 从具有增益区域的半导体光学器件的一端到具有SSC区域的半导体光学器件的另一端的距离。

公开(公告)号：US07148129B2

公开(公告)日：2006-12-12

申请号：US10805790

申请日：2004-03-22

申请人： Young-Churl Bang ,  Eun-Hwa Lee ,  Hyeon-Soo Kim ,  Jung-Kee Lee ,  Jun-Youn Kim

发明人： Young-Churl Bang ,  Eun-Hwa Lee ,  Hyeon-Soo Kim ,  Jung-Kee Lee ,  Jun-Youn Kim

IPC分类号： H01L21/20

CPC分类号： C30B29/40 ,  C30B25/04 ,  H01L21/02392 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639

摘要： A method of growing a semiconductor layer in a selective area by Metal Organic Chemical Vapor Deposition (MOCVD) and a mask pattern for s ame, includes a first mask pattern and a second mask pattern that are formed on a semiconductor substrate having a (100) crystalline plane. The first mask pattern has a first window wider than the selective area and a second mask pattern has a second window and a third window. The second window is defined by spacing the second mask pattern from the first mask pattern, in correspondence with a blocking area for blocking the surface migration of III-group semiconductor source gases at edges of the first window. The third window is as wide as the selective area. The semiconductor layer is grown by MOCVD on the semiconductor substrate exposed by the second and third windows. Trenches can be etched in the second and third windows and growth layers extend from the trench beyond the surface of the InP to block gas dispersion.

摘要翻译： 通过金属有机化学气相沉积（MOCVD）和掩模图案生长半导体层的选择区域的方法包括形成在具有（100）的半导体衬底的半导体衬底上的第一掩模图案和第二掩模图案， 晶面。 第一掩模图案具有比选择区域宽的第一窗口，第二掩模图案具有第二窗口和第三窗口。 第二窗口是通过将第二掩模图案与第一掩模图案间隔开来定义的，与用于阻挡第一窗口边缘处的III族半导体源气体的表面迁移的阻挡区域相对应。 第三个窗口与选择区域一样宽。 通过MOCVD在由第二和第三窗口暴露的半导体衬底上生长半导体层。 可以在第二和第三窗口中蚀刻沟槽，并且生长层从沟槽延伸超过InP的表面到阻挡气体分散体。

公开(公告)号：US20060098707A1

公开(公告)日：2006-05-11

申请号：US11180776

申请日：2005-07-13

申请人： Young-Churl Bang

发明人： Young-Churl Bang

IPC分类号： H01S3/097

CPC分类号： H01S5/20

摘要： A method of manufacturing a laser diode having an active layer made from semiconductor substances containing aluminum is disclosed. The method comprises the steps of forming a first mask, which has first and second slits spaced apart from each other, on a substrate, forming first and second oxidation barrier layers, which are limited by the first and second slits, on the substrate through selective area growth (SAG) using the first mask, and forming a plurality of layers including the active layer containing aluminum between the first and second oxidation barrier layers on the substrate.

摘要翻译： 公开了一种制造具有由包含铝的半导体物质制成的有源层的激光二极管的方法。 该方法包括以下步骤：在衬底上形成具有彼此间隔开的第一和第二狭缝的第一掩模，通过选择性地在衬底上形成受第一和第二狭缝限制的第一和第二氧化阻挡层 使用第一掩模的面积生长（SAG），并且在基板上的第一和第二氧化阻挡层之间形成包括含有铝的有源层的多个层。

公开(公告)号：US07501327B2

公开(公告)日：2009-03-10

申请号：US11217015

申请日：2005-08-31

申请人： Young-Hyun Kim ,  In Kim ,  Yu-Dong Bae ,  Young-Churl Bang

发明人： Young-Hyun Kim ,  In Kim ,  Yu-Dong Bae ,  Young-Churl Bang

IPC分类号： H01L21/76

CPC分类号： H01S5/227 ,  H01S5/0224 ,  Y10S438/975

摘要： Disclosed is a method for manufacturing a semiconductor optical device for flip-chip bonding. The method includes the steps of: etching an active layer and clad which are sequentially stacked on a semiconductor substrate into first and second alignment keys and an optical area, which has a mesa structure; growing at least two insulating layers at mesa-etched portions between the first and second alignment keys and the optical areas; and forming protection masks on the first and second alignment keys, growing an electrode on the optical area and the insulating layer except for the protection masks, and removing the protection masks.

摘要翻译： 公开了一种用于制造用于倒装芯片接合的半导体光学器件的方法。 该方法包括以下步骤：将依次层叠在半导体基板上的有源层和包层蚀刻成第一和第二对准键和具有台面结构的光学区域; 在第一和第二对准键和光学区域之间的台面蚀刻部分处生长至少两个绝缘层; 以及在所述第一和第二对准键上形成保护掩模，在所述光学区域上生长电极和除了所述保护掩模之外的绝缘层，以及去除所述保护掩模。

公开(公告)号：US20070030866A1

公开(公告)日：2007-02-08

申请号：US11403758

申请日：2006-04-13

申请人： Young-Hyun Kim ,  Yu-Dong Bae ,  Young-Churl Bang

发明人： Young-Hyun Kim ,  Yu-Dong Bae ,  Young-Churl Bang

IPC分类号： H01S3/098 ,  H01S5/00 ,  H01S3/04

CPC分类号： H01S5/20

摘要： A semiconductor laser having a spot-size converter (SSC) is provided. The semiconductor laser includes: a substrate; a gain region formed on the substrate to emit laser; an SSC region formed on the substrate to convert an optical mode of the emitted laser; and an upper layer formed on the gain region and the SSC region and having a larger thickness in the SSC region in comparison with the gain region. As a result, the laser vertically expands through the upper layer that is thicker along the SSC region so that an NFP (near field pattern) becomes larger and an FFP (far field pattern) becomes smaller, thus minimizing insertion loss into an optical fiber.

摘要翻译： 提供了具有点尺寸转换器（SSC）的半导体激光器。 半导体激光器包括：基板; 形成在所述基板上以发射激光的增益区域; 形成在基板上以转换所发射的激光的光学模式的SSC区域; 以及形成在增益区域和SSC区上并且与增益区域相比在SSC区域中具有较大厚度的上层。 结果，激光器沿着SSC区域垂直扩展通过较厚的上层，使得NFP（近场图案）变大，并且FFP（远场图案）变得更小，从而使对光纤的插入损耗最小化。

公开(公告)号：US20060094142A1

公开(公告)日：2006-05-04

申请号：US11217015

申请日：2005-08-31

申请人： Young-Hyun Kim ,  In Kim ,  Yu-Dong Bae ,  Young-Churl Bang

发明人： Young-Hyun Kim ,  In Kim ,  Yu-Dong Bae ,  Young-Churl Bang

IPC分类号： H01L21/00

CPC分类号： H01S5/227 ,  H01S5/0224 ,  Y10S438/975

摘要： Disclosed is a method for manufacturing a semiconductor optical device for flip-chip bonding. The method includes the steps of: etching an active layer and clad which are sequentially stacked on a semiconductor substrate into first and second alignment keys and an optical area, which has a mesa structure; growing at least two insulating layers at mesa-etched portions between the first and second alignment keys and the optical areas; and forming protection masks on the first and second alignment keys, growing an electrode on the optical area and the insulating layer except for the protection masks, and removing the protection masks.