公开(公告)号：US20050103259A1

公开(公告)日：2005-05-19

申请号：US10805790

申请日：2004-03-22

申请人： Young-Churl Bang ,  Eun-Hwa Lee ,  Hyeon-Soo Kim ,  Jung-Kee Lee ,  Jun-Youn Kim

发明人： Young-Churl Bang ,  Eun-Hwa Lee ,  Hyeon-Soo Kim ,  Jung-Kee Lee ,  Jun-Youn Kim

IPC分类号： H01L21/205 ,  C30B25/04 ,  C30B29/40 ,  H01L21/20 ,  H01S5/323 ,  C30B23/00 ,  C30B28/14

CPC分类号： C30B29/40 ,  C30B25/04 ,  H01L21/02392 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639

摘要： A method of growing a semiconductor layer in a selective area by Metal Organic Chemical Vapor Deposition (MOCVD) and a mask pattern for s ame, includes a first mask pattern and a second mask pattern that are formed on a semiconductor substrate having a (100) crystalline plane. The first mask pattern has a first window wider than the selective area and a second mask pattern has a second window and a third window. The second window is defined by spacing the second mask pattern from the first mask pattern, in correspondence with a blocking area for blocking the surface migration of III-group semiconductor source gases at edges of the first window. The third window is as wide as the selective area. The semiconductor layer is grown by MOCVD on the semiconductor substrate exposed by the second and third windows. Trenches can be etched in the second and third windows and growth layers extend from the trench beyond the surface of the InP to block gas dispersion.

摘要翻译： 通过金属有机化学气相沉积（MOCVD）和掩模图案生长半导体层的选择区域的方法包括形成在具有（100）的半导体衬底的半导体衬底上的第一掩模图案和第二掩模图案， 晶面。 第一掩模图案具有比选择区域宽的第一窗口，第二掩模图案具有第二窗口和第三窗口。 第二窗口是通过将第二掩模图案与第一掩模图案间隔开来定义的，与用于阻挡第一窗口边缘处的III族半导体源气体的表面迁移的阻挡区域相对应。 第三个窗口与选择区域一样宽。 通过MOCVD在由第二和第三窗口暴露的半导体衬底上生长半导体层。 可以在第二和第三窗口中蚀刻沟槽，并且生长层从沟槽延伸超过InP的表面到阻挡气体分散体。

公开(公告)号：US07148129B2

公开(公告)日：2006-12-12

申请号：US10805790

申请日：2004-03-22

申请人： Young-Churl Bang ,  Eun-Hwa Lee ,  Hyeon-Soo Kim ,  Jung-Kee Lee ,  Jun-Youn Kim

发明人： Young-Churl Bang ,  Eun-Hwa Lee ,  Hyeon-Soo Kim ,  Jung-Kee Lee ,  Jun-Youn Kim

IPC分类号： H01L21/20

CPC分类号： C30B29/40 ,  C30B25/04 ,  H01L21/02392 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639

摘要： A method of growing a semiconductor layer in a selective area by Metal Organic Chemical Vapor Deposition (MOCVD) and a mask pattern for s ame, includes a first mask pattern and a second mask pattern that are formed on a semiconductor substrate having a (100) crystalline plane. The first mask pattern has a first window wider than the selective area and a second mask pattern has a second window and a third window. The second window is defined by spacing the second mask pattern from the first mask pattern, in correspondence with a blocking area for blocking the surface migration of III-group semiconductor source gases at edges of the first window. The third window is as wide as the selective area. The semiconductor layer is grown by MOCVD on the semiconductor substrate exposed by the second and third windows. Trenches can be etched in the second and third windows and growth layers extend from the trench beyond the surface of the InP to block gas dispersion.

摘要翻译： 通过金属有机化学气相沉积（MOCVD）和掩模图案生长半导体层的选择区域的方法包括形成在具有（100）的半导体衬底的半导体衬底上的第一掩模图案和第二掩模图案， 晶面。 第一掩模图案具有比选择区域宽的第一窗口，第二掩模图案具有第二窗口和第三窗口。 第二窗口是通过将第二掩模图案与第一掩模图案间隔开来定义的，与用于阻挡第一窗口边缘处的III族半导体源气体的表面迁移的阻挡区域相对应。 第三个窗口与选择区域一样宽。 通过MOCVD在由第二和第三窗口暴露的半导体衬底上生长半导体层。 可以在第二和第三窗口中蚀刻沟槽，并且生长层从沟槽延伸超过InP的表面到阻挡气体分散体。

公开(公告)号：US20050157766A1

公开(公告)日：2005-07-21

申请号：US10864059

申请日：2004-06-09

申请人： Hyeon-Soo Kim ,  Young-Churl Bang ,  Jung-Kee Lee ,  Eun-Hwa Lee ,  Jun-Youn Kim

发明人： Hyeon-Soo Kim ,  Young-Churl Bang ,  Jung-Kee Lee ,  Eun-Hwa Lee ,  Jun-Youn Kim

IPC分类号： H01S5/026 ,  G02B6/122 ,  G02B6/14 ,  H01S5/00 ,  H01S5/10 ,  H01S5/223 ,  H01S5/50

CPC分类号： G02B6/1228 ,  H01S5/1014 ,  H01S5/1025 ,  H01S5/1064 ,  H01S5/2231 ,  H01S5/50

摘要： A semiconductor optical device including an SSC region includes a semiconductor substrate, a lower clad layer grown on the semiconductor substrate, and an upper clad layer grown on the lower clad layer. The semiconductor optical device with an SSC (Spot Size Conversion) area includes a gain area including an active layer grown between the lower clad layer and the upper clad layer to generate/amplify an optical signal; and an SSC (Spot Size Conversion) area including a waveguide layer extended from the active layer positioned between the lower and upper clad layers, such that it performs a spot size conversion (SSC) process of the optical signal generated from the gain area and generates the SSC-processed optical signal. The waveguide layer of the SSC area is configured to gradually reduce its thickness in proportion to a distance from the active layer, and the upper clad layer is etched in the form of a taper structure such that the taper structure has a narrower width in proportion to a distance from one end of the semiconductor optical device having the gain area to the other end of the semiconductor optical device having the SSC area.

摘要翻译： 包括SSC区域的半导体光学器件包括半导体衬底，在半导体衬底上生长的下覆盖层和在下包层上生长的上覆层。 具有SSC（点尺寸转换）区域的半导体光学器件包括增益区域，包括在下包层和上覆层之间生长的有源层，以产生/放大光信号; 和SSC（点尺寸转换）区域，包括从位于下包层和上包层之间的有源层延伸的波导层，使得其执行从增益区域产生的光信号的光斑尺寸转换（SSC）处理，并产生 经SSC处理的光信号。 SSC区域的波导层被配置成与有源层的距离成比例地逐渐减小其厚度，并且上部包层以锥形结构的形式被蚀刻，使得锥形结构具有与 从具有增益区域的半导体光学器件的一端到具有SSC区域的半导体光学器件的另一端的距离。

公开(公告)号：US20050063704A1

公开(公告)日：2005-03-24

申请号：US10890477

申请日：2004-07-13

申请人： Eun-Hwa Lee ,  Dong-Jae Shin ,  Jung-Kee Lee ,  Dae-Kwang Jung ,  Jun-Youn Kim

发明人： Eun-Hwa Lee ,  Dong-Jae Shin ,  Jung-Kee Lee ,  Dae-Kwang Jung ,  Jun-Youn Kim

IPC分类号： H04B10/04 ,  H04B10/155 ,  H04J14/02 ,  H04J14/00

CPC分类号： H04B10/506 ,  H04J14/02

摘要： A WDM optical transmitter using a wideband gain laser comprises a plurality of wideband gain lasers and a wavelength division multiplexer. Each wideband gain laser includes a gain medium with a 3 dB bandwidth of 40 nm or more at a threshold current, and it amplifies corresponding incoherent light injected into the gain medium and outputs a corresponding channel. The multiplexer multiplexes channels, outputted from the wideband gain lasers, into an optical signal in a WDM scheme and outputs the multiplexed optical signal.

摘要翻译： 使用宽带增益激光器的WDM光发射机包括多个宽带增益激光器和波分复用器。 每个宽带增益激光器包括在阈值电流下具有40nm或更大的3dB带宽的增益介质，并且其放大注入到增益介质中的相应非相干光并输出相应的通道。 多路复用器将从宽带增益激光器输出的信道复用为WDM方案中的光信号，并输出复用的光信号。

公开(公告)号：US20050230697A1

公开(公告)日：2005-10-20

申请号：US11078227

申请日：2005-03-11

申请人： O'Dae Kwon ,  Jun-Youn Kim ,  Sung-Jae An

发明人： O'Dae Kwon ,  Jun-Youn Kim ,  Sung-Jae An

IPC分类号： H01L21/3065 ,  H01L29/06 ,  H01L29/22 ,  H01L31/0336 ,  H01S5/183 ,  H01S5/20 ,  H01S5/30 ,  H01S5/34 ,  H01S5/343 ,  H01L33/00

CPC分类号： B82Y20/00 ,  H01L29/0657 ,  H01L33/105 ,  H01L33/20 ,  H01S5/18344 ,  H01S5/18352 ,  H01S5/2086 ,  H01S5/3412 ,  H01S5/3432 ,  H01S2301/176

摘要： The present invention relates to a method of mass fabricating a hyperboloid-drum element which is uniform in size and with the diameter of an active layer (active region or gain medium) ranging from tens of nm to less than a few μm, and to an element fabricated thereby. According to the present invention, the fabrication method of the hyperboloid-drum element comprises forming an epitaxial layer which includes an n-type semiconductor joined with a p-type semiconductor on a substrate and an active region near a border region and a boundary between the n-type semiconductor and the p-type semiconductor; and etching the epitaxial layer into a shape of the hyperboloid-drum having the minimum diameter at the active region by an ion-beam etching method. The hyperboloid-drum element fabricated in accordance with the present invention has advantages of uniformity in size and good reproducibility.

摘要翻译： 本发明涉及一种大体积制造双组织鼓元件的方法，所述双曲面鼓元件的尺寸是均匀的，并且具有几十纳米到小于几毫米的有源层（有源区或增益介质）的直径， 由此制造的元件。 根据本发明，双曲面鼓元件的制造方法包括形成外延层，该外延层包括在基板上与p型半导体结合的n型半导体和边界区域附近的有源区域以及 n型半导体和p型半导体; 并且通过离子束蚀刻方法将外延层蚀刻成在有源区具有最小直径的双曲面滚筒的形状。 根据本发明制造的双曲面鼓元件具有尺寸均匀性和良好重现性的优点。