摘要:
A proton exchange polymer membrane whose surface is treated by direct fluorination using a fluorine gas, a membrane-electrode assembly, and a fuel cell comprising the same are provided. The proton exchange polymer membrane of the present invention exhibits improved proton conductivity, high dimensional stability, and decreased methanol permeability through introducing hydrophobic fluorine having high electronegativity to the surface of the polymer membrane. Therefore, the proton exchange polymer membrane with excellent electrochemical properties of the present invention can be preferably utilized as polymer electrolyte membrane for fuel cell, generating electric energy from chemical energy of fuels.
摘要:
A proton exchange polymer membrane whose surface is treated by direct fluorination using a fluorine gas, a membrane-electrode assembly, and a fuel cell comprising the same are provided. The proton exchange polymer membrane of the present invention exhibits improved proton conductivity, high dimensional stability, and decreased methanol permeability through introducing hydrophobic fluorine having high electronegativity to the surface of the polymer membrane. Therefore, the proton exchange polymer membrane with excellent electrochemical properties of the present invention can be preferably utilized as polymer electrolyte membrane for fuel cell, generating electric energy from chemical energy of fuels.
摘要:
Disclosed are novel structures and methods for 3D NVM built with vertical transistors above a logic layer. A first embodiment has a conductive film under the transistors and serving as a common node in a memory block. The conductive film may be from a semiconductor layer used to build the transistors. Metal lines are disposed above the transistors for connection through 3D vias to underlying circuitry. Contact plugs may be formed between transistors and metal lines. The conductive film may be coupled to underlying circuitry through contacts on the conductive film or through interconnect vias underneath the film. A second embodiment has conductive lines disposed under the transistors. Either of conductive lines and metal lines may serve as source lines and the other as bit lines for the memory. For low parasitic resistances, the conductive lines may be shorted to bypass metal lines residing in underlying logic layer.
摘要:
Disclosed are novel structures and methods for 3D NVM built with vertical transistors above a logic layer. A first embodiment has a conductive film under the transistors and serving as a common node in a memory block. The conductive film may be from a semiconductor layer used to build the transistors. Metal lines are disposed above the transistors for connection through 3D vias to underlying circuitry. Contact plugs may be formed between transistors and metal lines. The conductive film may be coupled to underlying circuitry through contacts on the conductive film or through interconnect vias underneath the film. A second embodiment has conductive lines disposed under the transistors. Either of conductive lines and metal lines may serve as source lines and the other as bit lines for the memory. For low parasitic resistances, the conductive lines may be shorted to bypass metal lines residing in underlying logic layer.
摘要:
Novel three-dimensional DRAM structures are disclosed, together with methods of making the same. Each DRAM cell comprises a vertical transistor and a storage capacitor stacked vertically. Storage capacitors are arranged in a rectangular pattern in the array of DRAM cells. This arrangement improves the area efficiency of storage capacitors over honeycomb type. A first embodiment of the present disclosure uses cup-shaped storage capacitors. The exterior of the cup as well as the interior may contribute to the capacitance. In a second embodiment, a single capacitor pillar forms the internal electrode of each storage capacitor. A third embodiment employs double-pillar storage capacitors. Common to all embodiments are options to dispose contact plugs between vertical transistors and storage capacitors, dispose an etch-stop layer over the gate of vertical transistors, dispose one or more mesh layers for storage capacitors, and widen semiconductor pillars within available space in bit-line direction.
摘要:
Structures and methods that facilitate the formation of gate contacts for vertical transistors constructed with semiconductor pillars and spacer-like gates are disclosed. In a first embodiment, a gate contact rests on an extended gate region, a piece of a gate film, patterned at a side of a vertical transistor at the bottom of the gate. In a second embodiment, an extended gate region is patterned on top of one or more vertical transistors, resulting in a modified transistor structure. In a third embodiment, a gate contact rests on a top surface of a gate merged between two closely spaced vertical transistors. Optional methods and the resultant intermediate structures are included in the first two embodiments in order to overcome the related topography and ease the photolithography. The third embodiment includes alternatives for isolating the gate contact from the semiconductor pillars or for isolating the affected semiconductor pillars from the substrate.
摘要:
Provided is an apparatus for processing exhaust fluid in which a fluid generated in a process chamber of an apparatus for manufacturing a semiconductor, a display panel, or a solar cell is ejected to the outside. The apparatus for processing exhaust fluid includes: a vacuum pump that is connected to the process chamber, vacuumizes the inside of the process chamber, and ejects the fluid generated in the process chamber to the outside; and a plasma reactor in which plasma is formed and the fluid generated in the process chamber decomposes, wherein the plasma reactor includes: an insulating conduit that is provided between the process chamber and the vacuum pump and provides a space in which the fluid decomposes; at least one electrode unit that is provided on the outer circumferential surface of the conduit and receives a voltage to form the plasma; a buffer unit that is formed of an electrically conductive elastic substance and is disposed between the conduit and the electrode unit to attach the conduit and the electrode unit closely together; and an external pipe into which the conduit, electrode unit and buffer unit are inserted with sealing flanges provided on both end portions of the conduit and external pipe to seal a space between the conduit and the external pipe to prevent fluid process by-products from leaking out should the conduit crack or is damaged.
摘要:
The present invention is directed to a method of payment using a wireless Internet comprising the step of storing individual identification information provided from a user in an authentication server; authenticating the service server when request of the stored individual identification information is received from the service server, and transmitting the stored individual identification information to the service server when the authentication has succeeded; transmitting a message of requesting a service access to a mobile terminal of the user from the service server; and transmitting the individual identification information sent from the authentication server to the mobile terminal by means of a transmitting query of the individual identification information from the mobile terminal.
摘要:
The present invention relates to a thermal insulator using closed cell expanded perlite. The thermal insulator using closed cell expanded perlite of the present invention includes: expanded perlite 10 to 84 wt %ç, including dried and expanded perlite ore particles, having a surface with a closed cell shape, as an active ingredient; a liquid binder 15 to 85 wt %; and a reinforcing fiber 0.25 to 5 wt %. Accordingly, the present invention provides a thermal insulator, which enhances the rigidity of expanded perlite, minimizes porosity and gaps between the expanded perlite particles, by reducing compression ratio during compression molding, which results in lower density, improves constructability by lowering thermal conductivity, reduces material and energy costs and can reduce the area required for equipment installation by reducing the thickness of the thermal insulator.
摘要:
A method and apparatus for a called subscriber to send a sound for his own personal information as a ringback tone with a ringback tone replacing sound are disclosed. The method comprises the steps of: HLR providing MSC with the first information about whether a ringback tone is to be replaced or not and the second information for routing to sound providing means when a called terminal is registered in MSC; MSC requesting a call connection to the sound providing means based on the first and second information when the called terminal is called; and the sound providing means call-connecting to the calling terminal, and providing the calling terminal with a specific sound, wherein the specific sound is generated by combining a subscriber information sound, which can identify the called subscriber or can represent the subscriber's character, with the ringback tone replacing sound.