公开(公告)号：US08293613B2

公开(公告)日：2012-10-23

申请号：US12926590

申请日：2010-11-29

申请人： Young-Soo Park ,  Young-Nam Kim ,  Young-Sam Lim ,  Gi-Jung Kim ,  Pil-Kyu Kang

发明人： Young-Soo Park ,  Young-Nam Kim ,  Young-Sam Lim ,  Gi-Jung Kim ,  Pil-Kyu Kang

IPC分类号： H01L21/331

CPC分类号： H01L21/3221 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11551 ,  H01L2924/00011 ,  H01L2224/80001

摘要： An embodiment of a semiconductor device includes a semiconductor substrate, a first insulating layer formed over the semiconductor substrate, and a first semiconductor layer formed over the first insulation layer. At least one gettering region is formed in at least one of the first insulating layer and the first semiconductor layer. The gettering region includes a plurality of gettering sites, and at least one gettering site includes one of a precipitate, a dispersoid, an interface with the dispersoid, a stacking fault and a dislocation.

摘要翻译： 半导体器件的实施例包括半导体衬底，形成在半导体衬底上的第一绝缘层和形成在第一绝缘层上的第一半导体层。 在第一绝缘层和第一半导体层中的至少一个中形成至少一个吸杂区域。 吸气区域包括多个吸气部位，至少一个吸气部位包括沉淀物，分散质，与分散质的界面，堆垛层错和位错中的一个。

公开(公告)号：US20080224269A1

公开(公告)日：2008-09-18

申请号：US12073894

申请日：2008-03-11

申请人： Young-Soo Park ,  Young-Nam Kim ,  Young-Sam Lim ,  Gi-Jung Kim ,  Pil-Kyu Kang

发明人： Young-Soo Park ,  Young-Nam Kim ,  Young-Sam Lim ,  Gi-Jung Kim ,  Pil-Kyu Kang

IPC分类号： H01L29/32 ,  H01L21/22

CPC分类号： H01L21/3221 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11551 ,  H01L2924/00011 ,  H01L2224/80001

摘要： An embodiment of a semiconductor device includes a semiconductor substrate, a first insulating layer formed over the semiconductor substrate, and a first semiconductor layer formed over the first insulation layer. At least one gettering region is formed in at least one of the first insulating layer and the first semiconductor layer. The gettering region includes a plurality of gettering sites, and at least one gettering site includes one of a precipitate, a dispersoid, an interface with the dispersoid, a stacking fault and a dislocation.

摘要翻译： 半导体器件的实施例包括半导体衬底，形成在半导体衬底上的第一绝缘层和形成在第一绝缘层上的第一半导体层。 在第一绝缘层和第一半导体层中的至少一个中形成至少一个吸杂区域。 吸气区域包括多个吸气部位，至少一个吸气部位包括沉淀物，分散质，与分散质的界面，堆垛层错和位错中的一个。

公开(公告)号：US20110076838A1

公开(公告)日：2011-03-31

申请号：US12926590

申请日：2010-11-29

申请人： Young-Soo Park ,  Young-Nam Kim ,  Young-Sam Lim ,  Gi-Jung Kim ,  Pil-Kyu Kang

发明人： Young-Soo Park ,  Young-Nam Kim ,  Young-Sam Lim ,  Gi-Jung Kim ,  Pil-Kyu Kang

IPC分类号： H01L21/322

CPC分类号： H01L21/3221 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11551 ,  H01L2924/00011 ,  H01L2224/80001

摘要： An embodiment of a semiconductor device includes a semiconductor substrate, a first insulating layer formed over the semiconductor substrate, and a first semiconductor layer formed over the first insulation layer. At least one gettering region is formed in at least one of the first insulating layer and the first semiconductor layer. The gettering region includes a plurality of gettering sites, and at least one gettering site includes one of a precipitate, a dispersoid, an interface with the dispersoid, a stacking fault and a dislocation.

摘要翻译： 半导体器件的实施例包括半导体衬底，形成在半导体衬底上的第一绝缘层和形成在第一绝缘层上的第一半导体层。 在第一绝缘层和第一半导体层中的至少一个中形成至少一个吸杂区域。 吸气区域包括多个吸气部位，至少一个吸气部位包括沉淀物，分散质，与分散质的界面，堆垛层错和位错中的一个。

公开(公告)号：US20080213982A1

公开(公告)日：2008-09-04

申请号：US12039106

申请日：2008-02-28

申请人： Young-Soo Park ,  Young-Sam Lim ,  Young-Nam Kim ,  Dae-Lok Bae ,  Joon-Young Choi ,  Gi-Jung Kim

发明人： Young-Soo Park ,  Young-Sam Lim ,  Young-Nam Kim ,  Dae-Lok Bae ,  Joon-Young Choi ,  Gi-Jung Kim

IPC分类号： H01L21/36

CPC分类号： H01L21/76254 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/0262 ,  H01L21/02639

摘要： Provided is a method of fabricating a semiconductor wafer. The method includes preparing a substrate wafer having a non-single-crystalline thin layer; disposing at least one single crystalline pattern adjacent to the non-single-crystalline thin layer on the substrate wafer; and forming a material layer contacting the single crystalline pattern on the non-single-crystalline thin layer.

摘要翻译： 提供一种制造半导体晶片的方法。 该方法包括制备具有非单晶薄层的衬底晶片; 在衬底晶片上设置与非单晶薄层相邻的至少一个单晶图案; 以及在非单晶薄层上形成与单晶图案接触的材料层。

公开(公告)号：US20070197143A1

公开(公告)日：2007-08-23

申请号：US11706241

申请日：2007-02-15

申请人： Young-Sam Lim ,  Young-Nam Kim ,  Gi-Jung Kim

发明人： Young-Sam Lim ,  Young-Nam Kim ,  Gi-Jung Kim

IPC分类号： B24B1/00 ,  B24D11/00

CPC分类号： B24B37/24 ,  B24D18/0063

摘要： The surface(s) of a polishing pad for polishing an object has a first portion including hydrophilic material and a second portion including hydrophobic material. The first portion of the polishing surface is located in a first region of the polishing pad and the second portion of the polishing surface is located in a second region of the polishing pad juxtaposed with the first region in the radial direction of the pad. The hydrophilic material may be a polymer resin that contains hydrophilic functional groups having OH and/or ═O at bonding sites of the polymer. The hydrophobic material may be a polymer resin that contains hydrophobic functional groups having H and/or F at bonding sites of the polymer. The polishing pad is manufactured by extruding respective lines of the hydrophilic and hydrophobic materials. The extruders and a backing are moved relative to each other such that the lines form concentric rings of the hydrophilic and hydrophobic materials.

摘要翻译： 用于抛光物体的抛光垫的表面具有包括亲水材料的第一部分和包括疏水材料的第二部分。 抛光表面的第一部分位于抛光垫的第一区域中，并且抛光表面的第二部分位于抛光垫的与垫的径向方向上与第一区域并置的第二区域中。 亲水材料可以是聚合物树脂，其在聚合物的键合位置含有具有OH和/或-O的亲水性官能团。 疏水性材料可以是在聚合物的结合位置含有H和/或F的疏水官能团的聚合物树脂。 抛光垫通过挤出亲水和疏水材料的相应线来制造。 挤出机和背衬相对于彼此移动，使得线形成亲水和疏水材料的同心环。

公开(公告)号：US07815496B2

公开(公告)日：2010-10-19

申请号：US11706241

申请日：2007-02-15

申请人： Young-Sam Lim ,  Young-Nam Kim ,  Gi-Jung Kim

发明人： Young-Sam Lim ,  Young-Nam Kim ,  Gi-Jung Kim

IPC分类号： B24D11/00

CPC分类号： B24B37/24 ,  B24D18/0063

摘要： The surface(s) of a polishing pad for polishing an object has a first portion including hydrophilic material and a second portion including hydrophobic material. The first portion of the polishing surface is located in a first region of the polishing pad and the second portion of the polishing surface is located in a second region of the polishing pad juxtaposed with the first region in the radial direction of the pad. The hydrophilic material may be a polymer resin that contains hydrophilic functional groups having OH and/or ═O at bonding sites of the polymer. The hydrophobic material may be a polymer resin that contains hydrophobic functional groups having H and/or F at bonding sites of the polymer. The polishing pad is manufactured by extruding respective lines of the hydrophilic and hydrophobic materials. The extruders and a backing are moved relative to each other such that the lines form concentric rings of the hydrophilic and hydrophobic materials.

摘要翻译： 用于抛光物体的抛光垫的表面具有包括亲水材料的第一部分和包括疏水材料的第二部分。 抛光表面的第一部分位于抛光垫的第一区域中，并且抛光表面的第二部分位于抛光垫的与垫的径向方向上与第一区域并置的第二区域中。 亲水材料可以是在聚合物的键合位置处含有OH和/或= O的亲水性官能团的聚合物树脂。 疏水性材料可以是在聚合物的结合位置含有H和/或F的疏水官能团的聚合物树脂。 抛光垫通过挤出亲水和疏水材料的相应线来制造。 挤出机和背衬相对于彼此移动，使得线形成亲水和疏水材料的同心环。

公开(公告)号：US20070287280A1

公开(公告)日：2007-12-13

申请号：US11808584

申请日：2007-06-12

申请人： Dong-Min Kang ,  Young-Sam Lim ,  Gi-Jung Kim ,  Young-Nam Kim ,  Yun-Deok Kang ,  Ji-Sung Lee ,  Ki-Hyeon Kim ,  Kyoung-Jin Choi

发明人： Dong-Min Kang ,  Young-Sam Lim ,  Gi-Jung Kim ,  Young-Nam Kim ,  Yun-Deok Kang ,  Ji-Sung Lee ,  Ki-Hyeon Kim ,  Kyoung-Jin Choi

IPC分类号： H01L21/44

CPC分类号： H01L21/31133 ,  G03F7/425 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/19041

摘要： A composition for removing a photoresist and a method of forming a bump electrode using the composition are provided. The composition includes an amine compound having a hydroxyl group, a polar organic solvent having a heteroatom, an alkylammonium hydroxide and water. The method of forming the bump electrode includes forming a conductive pattern on a substrate, forming a passivation layer on the substrate, the passivation layer having a first opening that partially exposes the conductive pattern, forming a photoresist pattern on the passivation layer, the photoresist pattern having a second opening that exposes the first opening forming a bump electrode that fills the first opening and the second opening, and removing the photoresist pattern from the substrate using a composition including an amine compound having a hydroxyl group, a polar organic solvent having a heteroatom, an alkylammonium hydroxide and water.

摘要翻译： 提供了用于除去光致抗蚀剂的组合物和使用该组合物形成凸块电极的方法。 该组合物包括具有羟基的胺化合物，具有杂原子的极性有机溶剂，烷基氢氧化铵和水。 形成凸起电极的方法包括在衬底上形成导电图案，在衬底上形成钝化层，钝化层具有部分地暴露导电图案的第一开口，在钝化层上形成光致抗蚀剂图案，光致抗蚀剂图案 具有露出第一开口的第二开口，其形成充满第一开口和第二开口的凸块电极，并且使用包含具有羟基的胺化合物的组合物，具有杂原子的极性有机溶剂从基板除去光致抗蚀剂图案 ，烷基氢氧化铵和水。

公开(公告)号：US20060216942A1

公开(公告)日：2006-09-28

申请号：US11373425

申请日：2006-03-10

申请人： Gi-Jung Kim ,  Sang-Mun Chon ,  Young-Nam Kim ,  Dae-Won Kang ,  Young-Sam Lim

发明人： Gi-Jung Kim ,  Sang-Mun Chon ,  Young-Nam Kim ,  Dae-Won Kang ,  Young-Sam Lim

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/67313 ,  H01L21/67326

摘要： A wafer carrier is provided. The wafer carrier includes a storage holding member for storing a plurality of wafers and includes a plurality of open portions. The wafer carrier further includes a front fixing plate and a rear fixing plate disposed at a front and a rear end of the storage holding member, respectively. The front and rear fixing plates each face a side of at least one of the plurality of wafers. Moreover, left and right edges of the plurality of wafers stored in the storage holding member are exposed by the plurality of open portions.

摘要翻译： 提供晶片载体。 晶片载体包括用于存储多个晶片的存储保持构件，并且包括多个开放部分。 晶片载体还包括分别设置在存储保持构件的前端和后端的前固定板和后固定板。 前固定板和后固定板各自面对多个晶片中的至少一个的一侧。 此外，存储在存储保持部件中的多个晶片的左右边缘被多个开口部露出。

公开(公告)号：US08143142B2

公开(公告)日：2012-03-27

申请号：US12723882

申请日：2010-03-15

申请人： Young-Soo Park ,  Gi-Jung Kim ,  Won-Je Park ,  Jae-Sik Bae

发明人： Young-Soo Park ,  Gi-Jung Kim ,  Won-Je Park ,  Jae-Sik Bae

IPC分类号： H01L21/322

CPC分类号： H01L21/22 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02658 ,  H01L21/324 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14618 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2924/00014

摘要： A method of fabricating an epi-wafer includes providing a wafer including boron by cutting a single crystal silicon ingot, growing an insulating layer on one surface of the wafer, performing thermal treatment of the wafer, removing the insulating layer formed on one surface of the wafer, mirror-surface-grinding one surface of the wafer, and growing an epitaxial layer on one surface of the wafer and forming a high-density boron layer within the wafer that corresponds to the interface between the wafer and the epitaxial layer.

摘要翻译： 制造外延晶片的方法包括通过切割单晶硅锭来提供包括硼的晶片，在晶片的一个表面上生长绝缘层，对晶片进行热处理，去除形成在晶片的一个表面上的绝缘层 晶片，镜面研磨晶片的一个表面，以及在晶片的一个表面上生长外延层，并且在晶片内形成与晶片和外延层之间的界面相对应的高密度硼层。

公开(公告)号：US06919214B2

公开(公告)日：2005-07-19

申请号：US10688954

申请日：2003-10-21

申请人： Gi-Jung Kim ,  Kyoo-Chul Cho ,  Tae-Yeol Heo ,  Sook-Hyun Park

发明人： Gi-Jung Kim ,  Kyoo-Chul Cho ,  Tae-Yeol Heo ,  Sook-Hyun Park

IPC分类号： G01N33/00 ,  H01L21/66 ,  H01L21/00

CPC分类号： H01L22/24 ,  G01N2033/0095

摘要： An apparatus for analyzing a substrate employing a copper decoration includes a bath having at least two receiving containers for receiving electrolytes, slots formed at insides of the receiving containers for receiving substrates to be analyzed in a direction that is normal to a bottom face of the bath, lower copper plates provided in the receiving containers, the lower copper plates making contact with entire rear faces of the substrates received in the receiving containers, upper copper plates provided in the receiving containers, each of the upper copper plates corresponding to a respective one of the lower copper plates, and separated from front faces of the substrates, and a power source connected to the upper copper plates and the lower copper plates for providing voltages to the same. A plurality of substrates may be simultaneously analyzed using one apparatus thereby greatly reducing an amount of time required for the analysis.

摘要翻译： 用于分析使用铜装饰的基板的装置包括具有至少两个用于接收电解质的接收容器的浴槽，在接收容器的内侧形成的槽，用于接收正常于浴底面的方向分析的基板 设置在接收容器中的下铜板，与接收容器中容纳的基板的整个后表面接触的下铜板，设置在接收容器中的上铜板，每个上铜板对应于 下铜板，并且与基板的前表面分离，以及连接到上铜板和下铜板的电源，用于向其提供电压。 可以使用一个装置同时分析多个基板，从而大大减少了分析所需的时间量。