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    Chemical mechanical polishing composition and process
    1.
    发明授权
    Chemical mechanical polishing composition and process 失效
    化学机械抛光组合物和工艺

    公开(公告)号：US06872329B2

    公开(公告)日：2005-03-29

    申请号：US09842476

    申请日：2001-04-25

    申请人： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker ,  Shijian Li

    发明人： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker ,  Shijian Li

    IPC分类号： B24B37/04 ,  C09G1/02 ,  H01L21/321 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  H01L21/302

    CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/02

    摘要： A method and composition for planarizing a substrate surface is provided. The polishing composition includes an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal and a stabilizer such as a stannate salt. The composition may further include abrasive particles and/or inhibitors. The composition may be used in a multi-step polishing process including polishing a substrate surface to selectively remove a metal layer with respect to a barrier layer and dielectric layer and polishing a substrate surface using the composition to non-selectively remove the metal layer, a barrier layer, and a dielectric layer from the substrate surface.

    摘要翻译： 提供了用于平坦化基板表面的方法和组合物。 抛光组合物包括能够氧化经历平坦化的金属并产生与氧化金属络合的络合剂和稳定剂如锡酸盐的氧化剂。 组合物还可以包括研磨颗粒和/或抑制剂。 组合物可以用于多步抛光工艺中，包括抛光衬底表面以相对于阻挡层和电介质层选择性去除金属层，并使用该组合物抛光衬底表面以非选择性地去除金属层， 阻挡层和介电层。

    Method of chemical mechanical polishing with high throughput and low dishing
    4.
    发明授权
    Method of chemical mechanical polishing with high throughput and low dishing 失效
    化学机械抛光方法，具有高通量和低凹陷

    公开(公告)号：US07232761B2

    公开(公告)日：2007-06-19

    申请号：US10924417

    申请日：2004-08-24

    申请人： Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  David Mai ,  Fred C. Redeker

    发明人： Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  David Mai ,  Fred C. Redeker

    IPC分类号： H01L21/461

    CPC分类号： H01L21/3212 ,  B24B37/042 ,  B24B37/30 ,  H01L21/7684

    摘要： Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.

    摘要翻译： 提供了用于抛光导电材料的方法和装置，其具有低的特征凹陷和减少的或最小的剩余残余物。 在一个方面，提供了一种通过抛光衬底以去除体导电材料并通过载体头部旋转速度与平板旋转速度的比率在约2:1至约3:1之间来抛光衬底来进行衬底处理的方法，以去除 残留导电材料。 在另一方面，提供了一种用于处理衬底的方法，包括在衬底的中心以约600mm /秒至约1900mm /秒的第一相对线速度抛光衬底，并以第二相对线性 在衬底的中心处的速度在约100mm /秒到约550mm /秒之间。

    Cu CMP polishing pad cleaning
    5.
    发明授权
    Cu CMP polishing pad cleaning 失效
    Cu CMP抛光垫清洗

    公开(公告)号：US07220322B1

    公开(公告)日：2007-05-22

    申请号：US09645690

    申请日：2000-08-24

    申请人： Lizhong Sun ,  Shijian Li ,  Fred C. Redeker

    发明人： Lizhong Sun ,  Shijian Li ,  Fred C. Redeker

    IPC分类号： B08B7/04 ,  H01L21/302

    CPC分类号： B24B53/017

    摘要： A polishing pad is cleaned of Cu CMP by-products, subsequent to planarizing a wafer, to reduce pad-glazing by applying to the polishing pad surface a composition comprising about 0.1 to about 3.0 wt. % of at least one organic compound having one or more amine or amide groups, an acid or a base in an amount sufficient to adjust the pH of the composition to about 5.0 to about 12.0, the remainder water. Embodiments comprise ex situ cleaning of a rotating polishing pad by applying a solution having a pH of about 5.0 to about 12.0 at a flow rate of about 100 to about 600 ml/min. for about 3 to about 20 seconds after polishing a wafer having a Cu-containing surface and then removing the cleaning solution from the polishing pad by high pressure rinsing with water.

    摘要翻译： 在平坦化晶片之后，将抛光垫清除为Cu CMP副产物，通过向抛光垫表面施加包含约0.1至约3.0重量％的组合物的组合物来减少垫玻璃。 ％的至少一种具有一个或多个胺或酰胺基团的有机化合物，酸或碱的量足以将组合物的pH调节至约5.0至约12.0，其余为水。 实施例包括通过以约100至约600ml / min的流速施加pH为约5.0至约12.0的溶液来旋转抛光垫的原位清洁。 在研磨具有含Cu表面的晶片之后约3至约20秒，然后通过用水高压冲洗从抛光垫除去清洁溶液。

    Deposition chamber and method for depositing low dielectric constant films
    7.
    发明授权
    Deposition chamber and method for depositing low dielectric constant films 失效
    沉积室和沉积低介电常数膜的方法

    公开(公告)号：US06833052B2

    公开(公告)日：2004-12-21

    申请号：US10283565

    申请日：2002-10-29

    申请人： Shijian Li ,  Yaxin Wang ,  Fred C. Redeker ,  Tetsuya Ishikawa ,  Alan W. Collins

    发明人： Shijian Li ,  Yaxin Wang ,  Fred C. Redeker ,  Tetsuya Ishikawa ,  Alan W. Collins

    IPC分类号： C23F1600

    CPC分类号： C23C16/45574 ,  C23C16/401 ,  C23C16/45512 ,  C23C16/45514 ,  C23C16/45576 ,  H01J37/3244

    摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

    摘要翻译： 改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。 氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）输送到围绕衬底支撑件的周边（40）的腔室中。 将硅烷（或硅烷和SiF 4的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。 气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

    Method of chemical mechanical polishing with high throughput and low dishing
    8.
    发明授权
    Method of chemical mechanical polishing with high throughput and low dishing 失效
    化学机械抛光方法，具有高通量和低凹陷

    公开(公告)号：US06780773B2

    公开(公告)日：2004-08-24

    申请号：US10193469

    申请日：2002-07-11

    申请人： Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  David Mai ,  Fred C. Redeker

    发明人： Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  David Mai ,  Fred C. Redeker

    IPC分类号： H01L21641

    CPC分类号： H01L21/3212 ,  B24B37/042 ,  B24B37/30 ,  H01L21/7684

    摘要： Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.

    摘要翻译： 提供了用于抛光导电材料的方法和装置，其具有低的特征凹陷和减少的或最小的剩余残余物。 在一个方面，提供了一种通过抛光衬底以去除体导电材料并通过载体头部旋转速度与平板旋转速度的比率在约2:1至约3:1之间来抛光衬底来进行衬底处理的方法，以去除 残留导电材料。 在另一方面，提供了一种用于处理衬底的方法，包括在衬底的中心以约600mm /秒至约1900mm /秒的第一相对线速度抛光衬底，并以第二相对线性 在衬底的中心处的速度在约100mm /秒到约550mm /秒之间。