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公开(公告)号：US08383429B2
公开(公告)日：2013-02-26
申请号：US12733436
申请日：2007-08-29
申请人： Yue Ma , Chuan He , Zhenxu Pang , David Wang , Voha Nuch
发明人： Yue Ma , Chuan He , Zhenxu Pang , David Wang , Voha Nuch
IPC分类号： H01L21/00
CPC分类号： H01L21/324 , F27B17/0025 , H01L21/67109 , H01L21/6719
摘要： The present invention provides an apparatus and method for rapid and uniform thermal treatment of semiconductor workpieces in two closely arranged thermal treatment chambers with a retractable door between them. The retractable door moves in between two thermal treatment chambers during heating or cooling process, and additional heating and cooling sources are provided for double-side thermal treatment of the semiconductor workpiece.
摘要翻译： 本发明提供了一种用于在两个紧密布置的热处理室中快速均匀地热处理半导体工件的装置和方法，其间具有可伸缩门。 可伸缩门在加热或冷却过程中在两个热处理室之间移动，并且为半导体工件的双面热处理提供附加的加热和冷却源。
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公开(公告)号：US20110073469A1
公开(公告)日：2011-03-31
申请号：US12736176
申请日：2008-03-19
申请人： Yue Ma , Chuan He , Zhenxu Pang , Guangtao Shi , Jiexu Xia , Voha Nuch , Hui Wang
发明人： Yue Ma , Chuan He , Zhenxu Pang , Guangtao Shi , Jiexu Xia , Voha Nuch , Hui Wang
IPC分类号： C25D17/00
CPC分类号： H01L21/6723 , C25D5/48 , C25D5/50 , C25D17/00 , C25D17/001 , C25D17/02 , C25D17/04 , C25D21/02 , H01L21/67178
摘要： A electrochemical deposition system which has a 3-D stacked architecture comprises a factory interface for receiving semiconductor wafers, a mainframe comprising a mainframe transfer robot and a plurality of wafer holder assemblies which disposed on the top thereof, a plurality of electroplating cells disposed within the mainframe, a plurality of cleaning cells disposed within the mainframe and located below the electroplating cells, a plurality of thermal treatment chambers disposed in between the mainframe and the factory interface, and a fluid distribution system fluidly connected to the electroplating cells and the cleaning cells, wherein the mainframe transfer robot transfers the semiconductor wafer from the factory interface and within the electroplating cells, the cleaning cells, and the thermal treatment chambers. As a result, the system of the present invention is expandable to accommodate newly-added processing units without overmuch increased footprint.
摘要翻译： 具有3-D堆叠结构的电化学沉积系统包括用于接收半导体晶片的工厂接口，包括主机传送机器人的主机和设置在其顶部的多个晶片保持器组件，多个电镀单元 主机，设置在主机内并位于电镀单元下方的多个清洁单元，设置在主机和工厂界面之间的多个热处理室，以及流体连接到电镀单元和清洁单元的流体分配系统， 其中所述主机传送机器人从所述工厂接口和所述电镀单元，所述清洁单元和所述热处理室中传送所述半导体晶片。 结果，本发明的系统可扩展以容纳新增的处理单元，而不会增加占用空间。
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公开(公告)号：US20100240226A1
公开(公告)日：2010-09-23
申请号：US12733436
申请日：2007-08-29
申请人： Yue Ma , Chuan He , Zhenxu Pang , Hui Wang , Voha Nuch
发明人： Yue Ma , Chuan He , Zhenxu Pang , Hui Wang , Voha Nuch
CPC分类号： H01L21/324 , F27B17/0025 , H01L21/67109 , H01L21/6719
摘要： The present invention provides an apparatus and method for rapid and uniform thermal treatment of semiconductor workpieces in two closely arranged thermal treatment chambers with a retractable door between them. The retractable door moves in between two thermal treatment chambers during heating or cooling process, and additional heating and cooling sources are provided for double-side thermal treatment of the semiconductor workpiece.
摘要翻译： 本发明提供了一种用于在两个紧密布置的热处理室中快速均匀地热处理半导体工件的装置和方法，其间具有可伸缩门。 可伸缩门在加热或冷却过程中在两个热处理室之间移动，并且为半导体工件的双面热处理提供附加的加热和冷却源。
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公开(公告)号：US08518224B2
公开(公告)日：2013-08-27
申请号：US12734438
申请日：2007-11-02
申请人： Yue Ma , Xi Wang , Yunwen Huang , Zhenxu Pang , Voha Nuch , David Wang
发明人： Yue Ma , Xi Wang , Yunwen Huang , Zhenxu Pang , Voha Nuch , David Wang
CPC分类号： C25D17/00 , C25D17/001 , C25D17/10 , C25D21/04
摘要： The present invention provides a plating apparatus with multiple anode zones and cathode zones. The electrolyte flow field within each zone is controlled individually with independent flow control devices. A gas bubble collector whose surface is made into pleated channels is implemented for gas removal by collecting small bubbles, coalescing them, and releasing the residual gas. A buffer zone built within the gas bubble collector further allows unstable microscopic bubbles to dissolve.
摘要翻译： 本发明提供具有多个阳极区和阴极区的电镀装置。 每个区域内的电解液流场都由独立的流量控制装置单独控制。 其表面形成打褶通道的气泡收集器通过收集小气泡，聚结并释放残留气体来实现气体去除。 内置在气泡收集器内的缓冲区还允许不稳定的微小气泡溶解。
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公开(公告)号：US20100307913A1
公开(公告)日：2010-12-09
申请号：US12734438
申请日：2007-11-02
申请人： Yue Ma , Xi Wang , Yunwen Huang , Zhenxu Pang , Voha Nuch , David Wang
发明人： Yue Ma , Xi Wang , Yunwen Huang , Zhenxu Pang , Voha Nuch , David Wang
CPC分类号： C25D17/00 , C25D17/001 , C25D17/10 , C25D21/04
摘要： The present invention provides a plating apparatus with multiple anode zones and cathode zones. The electrolyte flow field within each zone is controlled individually with independent flow control devices. A gas bubble collector whose surface is made into pleated channels is implemented for gas removal by collecting small bubbles, coalescing them, and releasing the residual gas. A buffer zone built within the gas bubble collector further allows unstable microscopic bubbles to dissolve.
摘要翻译： 本发明提供具有多个阳极区和阴极区的电镀装置。 每个区域内的电解液流场都由独立的流量控制装置单独控制。 其表面形成打褶通道的气泡收集器通过收集小气泡，聚结并释放残留气体来实现气体去除。 内置在气泡收集器内的缓冲区还允许不稳定的微小气泡溶解。
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