公开(公告)号：US20110073469A1

公开(公告)日：2011-03-31

申请号：US12736176

申请日：2008-03-19

申请人： Yue Ma ,  Chuan He ,  Zhenxu Pang ,  Guangtao Shi ,  Jiexu Xia ,  Voha Nuch ,  Hui Wang

发明人： Yue Ma ,  Chuan He ,  Zhenxu Pang ,  Guangtao Shi ,  Jiexu Xia ,  Voha Nuch ,  Hui Wang

IPC分类号： C25D17/00

CPC分类号： H01L21/6723 ,  C25D5/48 ,  C25D5/50 ,  C25D17/00 ,  C25D17/001 ,  C25D17/02 ,  C25D17/04 ,  C25D21/02 ,  H01L21/67178

摘要： A electrochemical deposition system which has a 3-D stacked architecture comprises a factory interface for receiving semiconductor wafers, a mainframe comprising a mainframe transfer robot and a plurality of wafer holder assemblies which disposed on the top thereof, a plurality of electroplating cells disposed within the mainframe, a plurality of cleaning cells disposed within the mainframe and located below the electroplating cells, a plurality of thermal treatment chambers disposed in between the mainframe and the factory interface, and a fluid distribution system fluidly connected to the electroplating cells and the cleaning cells, wherein the mainframe transfer robot transfers the semiconductor wafer from the factory interface and within the electroplating cells, the cleaning cells, and the thermal treatment chambers. As a result, the system of the present invention is expandable to accommodate newly-added processing units without overmuch increased footprint.

摘要翻译： 具有3-D堆叠结构的电化学沉积系统包括用于接收半导体晶片的工厂接口，包括主机传送机器人的主机和设置在其顶部的多个晶片保持器组件，多个电镀单元 主机，设置在主机内并位于电镀单元下方的多个清洁单元，设置在主机和工厂界面之间的多个热处理室，以及流体连接到电镀单元和清洁单元的流体分配系统， 其中所述主机传送机器人从所述工厂接口和所述电镀单元，所述清洁单元和所述热处理室中传送所述半导体晶片。 结果，本发明的系统可扩展以容纳新增的处理单元，而不会增加占用空间。

公开(公告)号：US20100240226A1

公开(公告)日：2010-09-23

申请号：US12733436

申请日：2007-08-29

申请人： Yue Ma ,  Chuan He ,  Zhenxu Pang ,  Hui Wang ,  Voha Nuch

发明人： Yue Ma ,  Chuan He ,  Zhenxu Pang ,  Hui Wang ,  Voha Nuch

IPC分类号： H01L21/26 ,  F28C3/00

CPC分类号： H01L21/324 ,  F27B17/0025 ,  H01L21/67109 ,  H01L21/6719

摘要： The present invention provides an apparatus and method for rapid and uniform thermal treatment of semiconductor workpieces in two closely arranged thermal treatment chambers with a retractable door between them. The retractable door moves in between two thermal treatment chambers during heating or cooling process, and additional heating and cooling sources are provided for double-side thermal treatment of the semiconductor workpiece.

摘要翻译： 本发明提供了一种用于在两个紧密布置的热处理室中快速均匀地热处理半导体工件的装置和方法，其间具有可伸缩门。 可伸缩门在加热或冷却过程中在两个热处理室之间移动，并且为半导体工件的双面热处理提供附加的加热和冷却源。

公开(公告)号：US20110079247A1

公开(公告)日：2011-04-07

申请号：US12736178

申请日：2008-03-17

申请人： Yue Ma ,  Chuan He ,  Guangtao Shi ,  Voha Nuch ,  Hui Wang

发明人： Yue Ma ,  Chuan He ,  Guangtao Shi ,  Voha Nuch ,  Hui Wang

IPC分类号： B08B3/00

CPC分类号： H01L21/6715 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67253

摘要： The invention discloses a low-cost apparatus for chemical solution preparation with controlled process parameters such as chemical age, temperature, yield of active ingredients at the point of use. In addition, this apparatus provides chamber-to-chamber consistency on these parameters across multiple processing chambers on a single wafer wet-clean system. The invention also discloses a method to use chemical solution mixture resident time to achieve optimal combined effect of temperature, reactivity and yield of active ingredients of chemical solution mixture for best wafer treatment results.

摘要翻译： 本发明公开了一种用于化学溶液制备的低成本装置，其具有受控的工艺参数，例如化学年龄，温度，使用时活性成分的产率。 此外，该装置在单个晶片湿清洁系统上的多个处理室上提供这些参数的腔室与室之间的一致性。 本发明还公开了一种使用化学溶液混合物驻留时间来实现化学溶液混合物的活性成分的温度，反应性和产率的最佳组合效果的方法，以获得最佳的晶片处理结果。

公开(公告)号：US09492852B2

公开(公告)日：2016-11-15

申请号：US13262264

申请日：2009-03-31

申请人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Yue Ma ,  Hui Wang

发明人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Yue Ma ,  Hui Wang

IPC分类号： B08B3/00 ,  B08B3/12 ,  H01L21/67

CPC分类号： H01L21/02068 ,  B08B3/12 ,  H01L21/02063 ,  H01L21/67051

摘要： A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or counter clockwise.

摘要翻译： 一种使用超声波超声波装置清洗半导体衬底的方法，包括通过使用卡盘保持半导体衬底，将超声波器件邻近半导体衬底定位，在半导体衬底上注入化学液体，并在半导体衬底和 超声波/超声波装置，通过顺时针或逆时针转动半导体衬底或超/超声波装置，在清洁过程期间，为了卡盘的每次旋转，改变半导体衬底和超/超声波装置之间的间隙。

公开(公告)号：US20120097195A1

公开(公告)日：2012-04-26

申请号：US13262264

申请日：2009-03-31

申请人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Yue Ma ,  Hui Wang

发明人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Yue Ma ,  Hui Wang

IPC分类号： B08B3/00

CPC分类号： H01L21/02068 ,  B08B3/12 ,  H01L21/02063 ,  H01L21/67051

摘要： A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or count clockwise.

摘要翻译： 一种使用超声波超声波装置清洗半导体衬底的方法，包括通过使用卡盘保持半导体衬底，将超声波器件邻近半导体衬底定位，在半导体衬底上注入化学液体，并在半导体衬底和 超声波/超声波装置，通过顺时针旋转半导体衬底或超/超声波装置，顺时针或顺时针方向计数，在清洁过程中，通过卡盘的每次旋转来改变半导体衬底和超/超声波装置之间的间隙。

公开(公告)号：US09666426B2

公开(公告)日：2017-05-30

申请号：US14127285

申请日：2011-06-24

申请人： Hui Wang ,  Yue Ma ,  Chuan He ,  Xi Wang

发明人： Hui Wang ,  Yue Ma ,  Chuan He ,  Xi Wang

IPC分类号： C25D7/12 ,  C25D5/20 ,  H01L21/02 ,  C25D17/00 ,  C25D5/08 ,  C25D5/18 ,  C25D17/06 ,  C25D21/10

CPC分类号： C25D21/10 ,  C25D5/08 ,  C25D5/18 ,  C25D5/20 ,  C25D7/12 ,  C25D7/123 ,  C25D17/00 ,  C25D17/001 ,  C25D17/002 ,  C25D17/008 ,  C25D17/06 ,  H01L21/02 ,  H01L21/67138

摘要： An apparatus for substrate metallization from electrolyte is provided. The apparatus comprises: an immersion cell containing metal salt electrolyte; at least one electrode connecting to at least one power supply; an electrically conductive substrate holder holding at least one substrate to expose a conductive side of the substrate to face the at least one electrode; an oscillating actuator for oscillating the substrate holder with an amplitude and a frequency; at least one ultrasonic device with an operating frequency and an intensity, disposed in the metallization apparatus; at least one ultrasonic power generator connecting to the ultrasonic device; at least one inlet for metal slat electrolyte feeding; and at least one outlet for metal salt electrolyte draining.

公开(公告)号：US20100139710A1

公开(公告)日：2010-06-10

申请号：US12452367

申请日：2007-07-05

申请人： Hui Wang ,  Jian Wang ,  Yue Ma ,  Chuan He

发明人： Hui Wang ,  Jian Wang ,  Yue Ma ,  Chuan He

IPC分类号： B08B3/12 ,  B08B13/00 ,  B08B3/08

CPC分类号： H01L21/02041 ,  B08B3/12 ,  H01L21/02052 ,  H01L21/02063 ,  H01L21/6704 ,  H01L21/67051

摘要： An apparatus for cleaning a surface of wafer or substrate includes a plate being positioned with a gap to surface of the wafer or substrate, and the plate being rotated around an axis vertical to surface of wafer or substrate. The rotating plate surface facing surface of the wafer or substrate has grooves, regular patterns, and irregular patterns to enhance the cleaning efficiency. Another embodiment further includes an ultra sonic or mega sonic transducer vibrating the rotating plate during cleaning process.

摘要翻译： 用于清洁晶片或基板的表面的设备包括板，其定位成与晶片或基板的表面间隔开，并且板围绕垂直于晶片或基板表面的轴线旋转。 晶片或基板的旋转板表面相对表面具有凹槽，规则图案和不规则图案以提高清洁效率。 另一个实施例还包括在清洁过程中振动旋转板的超声波或超声波传感器。

公开(公告)号：US20140216940A1

公开(公告)日：2014-08-07

申请号：US14127285

申请日：2011-06-24

申请人： Hui Wang ,  Yue Ma ,  Chuan He ,  Xi Wang

发明人： Hui Wang ,  Yue Ma ,  Chuan He ,  Xi Wang

IPC分类号： H01L21/02 ,  C25D21/10 ,  C25D17/00

CPC分类号： C25D21/10 ,  C25D5/08 ,  C25D5/18 ,  C25D5/20 ,  C25D7/12 ,  C25D7/123 ,  C25D17/00 ,  C25D17/001 ,  C25D17/002 ,  C25D17/008 ,  C25D17/06 ,  H01L21/02 ,  H01L21/67138

摘要： An apparatus for substrate metallization from electrolyte is provided. The apparatus comprises: an immersion cell containing metal salt electrolyte; at least one electrode connecting to at least one power supply; an electrically conductive substrate holder holding at least one substrate to expose a conductive side of the substrate to face the at least one electrode; an oscillating actuator for oscillating the substrate holder with an amplitude and a frequency; at least one ultrasonic device with an operating frequency and an intensity, disposed in the metallization apparatus; at least one ultrasonic power generator connecting to the ultrasonic device; at least one inlet for metal slat electrolyte feeding; and at least one outlet for metal salt electrolyte draining.

摘要翻译： 提供了一种用于从电解质进行衬底金属化的设备。 该装置包括：含有金属盐电解质的浸液池; 连接至少一个电源的至少一个电极; 保持至少一个基板的导电基板保持器，以暴露所述基板的导电侧面对所述至少一个电极; 用于以幅度和频率振荡衬底保持器的振荡致动器; 设置在所述金属化装置中的具有工作频率和强度的至少一个超声装置; 连接到所述超声波装置的至少一个超声波发生发电机; 用于金属板条电解质进料的至少一个入口; 和用于金属盐电解液排出的至少一个出口。

公开(公告)号：US20110259752A1

公开(公告)日：2011-10-27

申请号：US13119125

申请日：2008-09-16

申请人： Yue Ma ,  Xi Wang ,  Chuan He ,  Hui Wang

发明人： Yue Ma ,  Xi Wang ,  Chuan He ,  Hui Wang

IPC分类号： C25D7/12

CPC分类号： C25D5/08 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  C25D17/12 ,  C25D21/12 ,  H01L21/2885

摘要： The methods practiced in an electrochemical deposition apparatus with two or more electrodes, described in earlier inventions, are disclosed. The methods produce uniform copper films with WFNU less than 2.5% on semiconductor wafers bearing a resistive copper seed layer with a thickness ranging from 50 to 9O0 A in a copper sulfate based electrolyte whose conductivity is between 0.02 to 0.8 S/cm.

摘要翻译： 公开了在具有两个或多个电极的电化学沉积设备中实施的方法，其在先前的发明中描述。 该方法在导电率为0.02至0.8S / cm的硫酸铜基电解质中，在半导体晶片上产生厚度范围为50至90的电阻铜籽晶层的WFNU小于2.5％的均匀铜膜。

公开(公告)号：US09070723B2

公开(公告)日：2015-06-30

申请号：US12452367

申请日：2007-07-05

申请人： Hui Wang ,  Jian Wang ,  Yue Ma ,  Chuan He

发明人： Hui Wang ,  Jian Wang ,  Yue Ma ,  Chuan He

IPC分类号： B08B3/10 ,  H01L21/67 ,  H01L21/02

CPC分类号： H01L21/02041 ,  B08B3/12 ,  H01L21/02052 ,  H01L21/02063 ,  H01L21/6704 ,  H01L21/67051

摘要： An apparatus for cleaning a surface of wafer or substrate includes a plate being positioned with a gap to surface of the wafer or substrate, and the plate being rotated around an axis vertical to surface of wafer or substrate. The rotating plate surface facing surface of the wafer or substrate has grooves, regular patterns, and irregular patterns to enhance the cleaning efficiency. Another embodiment further includes an ultra sonic or mega sonic transducer vibrating the rotating plate during cleaning process.

摘要翻译： 用于清洁晶片或基板的表面的设备包括板，其定位成与晶片或基板的表面间隔开，并且板围绕垂直于晶片或基板表面的轴线旋转。 晶片或基板的旋转板表面相对表面具有凹槽，规则图案和不规则图案以提高清洁效率。 另一个实施例还包括在清洁过程中振动旋转板的超声波或超声波传感器。