公开(公告)号：US08383429B2

公开(公告)日：2013-02-26

申请号：US12733436

申请日：2007-08-29

申请人： Yue Ma ,  Chuan He ,  Zhenxu Pang ,  David Wang ,  Voha Nuch

发明人： Yue Ma ,  Chuan He ,  Zhenxu Pang ,  David Wang ,  Voha Nuch

IPC分类号： H01L21/00

CPC分类号： H01L21/324 ,  F27B17/0025 ,  H01L21/67109 ,  H01L21/6719

摘要： The present invention provides an apparatus and method for rapid and uniform thermal treatment of semiconductor workpieces in two closely arranged thermal treatment chambers with a retractable door between them. The retractable door moves in between two thermal treatment chambers during heating or cooling process, and additional heating and cooling sources are provided for double-side thermal treatment of the semiconductor workpiece.

摘要翻译： 本发明提供了一种用于在两个紧密布置的热处理室中快速均匀地热处理半导体工件的装置和方法，其间具有可伸缩门。 可伸缩门在加热或冷却过程中在两个热处理室之间移动，并且为半导体工件的双面热处理提供附加的加热和冷却源。

公开(公告)号：US20110073469A1

公开(公告)日：2011-03-31

申请号：US12736176

申请日：2008-03-19

申请人： Yue Ma ,  Chuan He ,  Zhenxu Pang ,  Guangtao Shi ,  Jiexu Xia ,  Voha Nuch ,  Hui Wang

发明人： Yue Ma ,  Chuan He ,  Zhenxu Pang ,  Guangtao Shi ,  Jiexu Xia ,  Voha Nuch ,  Hui Wang

IPC分类号： C25D17/00

CPC分类号： H01L21/6723 ,  C25D5/48 ,  C25D5/50 ,  C25D17/00 ,  C25D17/001 ,  C25D17/02 ,  C25D17/04 ,  C25D21/02 ,  H01L21/67178

摘要： A electrochemical deposition system which has a 3-D stacked architecture comprises a factory interface for receiving semiconductor wafers, a mainframe comprising a mainframe transfer robot and a plurality of wafer holder assemblies which disposed on the top thereof, a plurality of electroplating cells disposed within the mainframe, a plurality of cleaning cells disposed within the mainframe and located below the electroplating cells, a plurality of thermal treatment chambers disposed in between the mainframe and the factory interface, and a fluid distribution system fluidly connected to the electroplating cells and the cleaning cells, wherein the mainframe transfer robot transfers the semiconductor wafer from the factory interface and within the electroplating cells, the cleaning cells, and the thermal treatment chambers. As a result, the system of the present invention is expandable to accommodate newly-added processing units without overmuch increased footprint.

摘要翻译： 具有3-D堆叠结构的电化学沉积系统包括用于接收半导体晶片的工厂接口，包括主机传送机器人的主机和设置在其顶部的多个晶片保持器组件，多个电镀单元 主机，设置在主机内并位于电镀单元下方的多个清洁单元，设置在主机和工厂界面之间的多个热处理室，以及流体连接到电镀单元和清洁单元的流体分配系统， 其中所述主机传送机器人从所述工厂接口和所述电镀单元，所述清洁单元和所述热处理室中传送所述半导体晶片。 结果，本发明的系统可扩展以容纳新增的处理单元，而不会增加占用空间。

公开(公告)号：US20100240226A1

公开(公告)日：2010-09-23

申请号：US12733436

申请日：2007-08-29

申请人： Yue Ma ,  Chuan He ,  Zhenxu Pang ,  Hui Wang ,  Voha Nuch

发明人： Yue Ma ,  Chuan He ,  Zhenxu Pang ,  Hui Wang ,  Voha Nuch

IPC分类号： H01L21/26 ,  F28C3/00

CPC分类号： H01L21/324 ,  F27B17/0025 ,  H01L21/67109 ,  H01L21/6719

摘要： The present invention provides an apparatus and method for rapid and uniform thermal treatment of semiconductor workpieces in two closely arranged thermal treatment chambers with a retractable door between them. The retractable door moves in between two thermal treatment chambers during heating or cooling process, and additional heating and cooling sources are provided for double-side thermal treatment of the semiconductor workpiece.

摘要翻译： 本发明提供了一种用于在两个紧密布置的热处理室中快速均匀地热处理半导体工件的装置和方法，其间具有可伸缩门。 可伸缩门在加热或冷却过程中在两个热处理室之间移动，并且为半导体工件的双面热处理提供附加的加热和冷却源。

公开(公告)号：US08518224B2

公开(公告)日：2013-08-27

申请号：US12734438

申请日：2007-11-02

申请人： Yue Ma ,  Xi Wang ,  Yunwen Huang ,  Zhenxu Pang ,  Voha Nuch ,  David Wang

发明人： Yue Ma ,  Xi Wang ,  Yunwen Huang ,  Zhenxu Pang ,  Voha Nuch ,  David Wang

IPC分类号： C25D17/00 ,  C25D17/02 ,  C25D21/04 ,  C25D7/12

CPC分类号： C25D17/00 ,  C25D17/001 ,  C25D17/10 ,  C25D21/04

摘要： The present invention provides a plating apparatus with multiple anode zones and cathode zones. The electrolyte flow field within each zone is controlled individually with independent flow control devices. A gas bubble collector whose surface is made into pleated channels is implemented for gas removal by collecting small bubbles, coalescing them, and releasing the residual gas. A buffer zone built within the gas bubble collector further allows unstable microscopic bubbles to dissolve.

摘要翻译： 本发明提供具有多个阳极区和阴极区的电镀装置。 每个区域内的电解液流场都由独立的流量控制装置单独控制。 其表面形成打褶通道的气泡收集器通过收集小气泡，聚结并释放残留气体来实现气体去除。 内置在气泡收集器内的缓冲区还允许不稳定的微小气泡溶解。

公开(公告)号：US20100307913A1

公开(公告)日：2010-12-09

申请号：US12734438

申请日：2007-11-02

申请人： Yue Ma ,  Xi Wang ,  Yunwen Huang ,  Zhenxu Pang ,  Voha Nuch ,  David Wang

发明人： Yue Ma ,  Xi Wang ,  Yunwen Huang ,  Zhenxu Pang ,  Voha Nuch ,  David Wang

IPC分类号： C25D17/00 ,  C25D17/02 ,  C25D17/10

CPC分类号： C25D17/00 ,  C25D17/001 ,  C25D17/10 ,  C25D21/04

摘要： The present invention provides a plating apparatus with multiple anode zones and cathode zones. The electrolyte flow field within each zone is controlled individually with independent flow control devices. A gas bubble collector whose surface is made into pleated channels is implemented for gas removal by collecting small bubbles, coalescing them, and releasing the residual gas. A buffer zone built within the gas bubble collector further allows unstable microscopic bubbles to dissolve.

摘要翻译： 本发明提供具有多个阳极区和阴极区的电镀装置。 每个区域内的电解液流场都由独立的流量控制装置单独控制。 其表面形成打褶通道的气泡收集器通过收集小气泡，聚结并释放残留气体来实现气体去除。 内置在气泡收集器内的缓冲区还允许不稳定的微小气泡溶解。

公开(公告)号：US08580042B2

公开(公告)日：2013-11-12

申请号：US12734983

申请日：2007-12-10

申请人： Voha Nuch ,  David Wang ,  Yue Ma ,  Fufa Chen ,  Jian Wang ,  Yunwen Huang ,  Liangzhi Xie ,  Chuan He

发明人： Voha Nuch ,  David Wang ,  Yue Ma ,  Fufa Chen ,  Jian Wang ,  Yunwen Huang ,  Liangzhi Xie ,  Chuan He

IPC分类号： B08B3/00 ,  B08B7/00

CPC分类号： H01L21/67051

摘要： An apparatus for cleaning and conditioning the surface of a semiconductor substrate such as wafer includes a rotatable chuck, a chamber, a rotatable tray for collecting cleaning solution with one or more drain outlets, multiple receptors for collecting multiple cleaning solutions, a first motor to drive chuck, and a second motor to drive the tray. The drain outlet in the tray can be positioned directly above its designated receptor located under the drain outlet. The cleaning solution collected by the tray can be guided into designated receptor. One characteristic of the apparatus is having a robust and precisely controlled cleaning solution recycle with minimum cross contamination.

摘要翻译： 用于清洁和调理诸如晶片的半导体衬底的表面的设备包括可转动卡盘，腔室，用于收集具有一个或多个排出口的清洁溶液的可旋转托盘，用于收集多个清洁溶液的多个受体，用于驱动的​​第一马达 卡盘和第二马达驱动托盘。 托盘中的排水出口可以位于排水出口下方的指定接收器的正上方。 由托盘收集的清洁溶液可以被引导到指定的受体中。 该设备的一个特征是具有坚固且精确控制的清洁溶液循环，具有最小的交叉污染。

公开(公告)号：US20110114120A1

公开(公告)日：2011-05-19

申请号：US12734983

申请日：2007-12-10

申请人： Voha Nuch ,  David Wang ,  Yue Ma ,  Fufa Chen ,  Jian Wang ,  Yunwen Huang ,  Liangzhi Xie ,  Chuan He

发明人： Voha Nuch ,  David Wang ,  Yue Ma ,  Fufa Chen ,  Jian Wang ,  Yunwen Huang ,  Liangzhi Xie ,  Chuan He

IPC分类号： B08B3/00

CPC分类号： H01L21/67051

摘要： An apparatus for cleaning and conditioning the surface of a semiconductor substrate such as wafer includes a rotatable chuck, a chamber, a rotatable tray for collecting cleaning solution with one or more drain outlets, multiple receptors for collecting multiple cleaning solutions, a first motor to drive chuck, and a second motor to drive the tray. The drain outlet in the tray can be positioned directly above its designated receptor located under the drain outlet. The cleaning solution collected by the tray can be guided into designated receptor. One characteristic of the apparatus is having a robust and precisely controlled cleaning solution recycle with minimum cross contamination.

摘要翻译： 用于清洁和调理诸如晶片的半导体衬底的表面的设备包括可转动卡盘，腔室，用于收集具有一个或多个排出口的清洁溶液的可旋转托盘，用于收集多个清洁溶液的多个受体，用于驱动的​​第一马达 卡盘和第二马达驱动托盘。 托盘中的排水出口可以位于排水出口下方的指定接收器的正上方。 由托盘收集的清洁溶液可以被引导到指定的受体中。 该设备的一个特征是具有坚固且精确控制的清洁溶液循环，具有最小的交叉污染。

公开(公告)号：US20110079247A1

公开(公告)日：2011-04-07

申请号：US12736178

申请日：2008-03-17

申请人： Yue Ma ,  Chuan He ,  Guangtao Shi ,  Voha Nuch ,  Hui Wang

发明人： Yue Ma ,  Chuan He ,  Guangtao Shi ,  Voha Nuch ,  Hui Wang

IPC分类号： B08B3/00

CPC分类号： H01L21/6715 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67253

摘要： The invention discloses a low-cost apparatus for chemical solution preparation with controlled process parameters such as chemical age, temperature, yield of active ingredients at the point of use. In addition, this apparatus provides chamber-to-chamber consistency on these parameters across multiple processing chambers on a single wafer wet-clean system. The invention also discloses a method to use chemical solution mixture resident time to achieve optimal combined effect of temperature, reactivity and yield of active ingredients of chemical solution mixture for best wafer treatment results.

摘要翻译： 本发明公开了一种用于化学溶液制备的低成本装置，其具有受控的工艺参数，例如化学年龄，温度，使用时活性成分的产率。 此外，该装置在单个晶片湿清洁系统上的多个处理室上提供这些参数的腔室与室之间的一致性。 本发明还公开了一种使用化学溶液混合物驻留时间来实现化学溶液混合物的活性成分的温度，反应性和产率的最佳组合效果的方法，以获得最佳的晶片处理结果。

公开(公告)号：US09492852B2

公开(公告)日：2016-11-15

申请号：US13262264

申请日：2009-03-31

申请人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Yue Ma ,  Hui Wang

发明人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Yue Ma ,  Hui Wang

IPC分类号： B08B3/00 ,  B08B3/12 ,  H01L21/67

CPC分类号： H01L21/02068 ,  B08B3/12 ,  H01L21/02063 ,  H01L21/67051

摘要： A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or counter clockwise.

摘要翻译： 一种使用超声波超声波装置清洗半导体衬底的方法，包括通过使用卡盘保持半导体衬底，将超声波器件邻近半导体衬底定位，在半导体衬底上注入化学液体，并在半导体衬底和 超声波/超声波装置，通过顺时针或逆时针转动半导体衬底或超/超声波装置，在清洁过程期间，为了卡盘的每次旋转，改变半导体衬底和超/超声波装置之间的间隙。

公开(公告)号：US20120097195A1

公开(公告)日：2012-04-26

申请号：US13262264

申请日：2009-03-31

申请人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Yue Ma ,  Hui Wang

发明人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Yue Ma ,  Hui Wang

IPC分类号： B08B3/00

CPC分类号： H01L21/02068 ,  B08B3/12 ,  H01L21/02063 ,  H01L21/67051

摘要： A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or count clockwise.

摘要翻译： 一种使用超声波超声波装置清洗半导体衬底的方法，包括通过使用卡盘保持半导体衬底，将超声波器件邻近半导体衬底定位，在半导体衬底上注入化学液体，并在半导体衬底和 超声波/超声波装置，通过顺时针旋转半导体衬底或超/超声波装置，顺时针或顺时针方向计数，在清洁过程中，通过卡盘的每次旋转来改变半导体衬底和超/超声波装置之间的间隙。