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    Two-dimensional electron gas field effect transistor including an improved InGaAs channel layer
    1.
    发明授权
    Two-dimensional electron gas field effect transistor including an improved InGaAs channel layer 失效
    二维电子气场效应晶体管包括改善的InGaAs沟道层

    公开(公告)号：US5373168A

    公开(公告)日：1994-12-13

    申请号：US988407

    申请日：1992-12-07

    申请人： Yuji Ando ,  Kazuhiko Onda ,  Masaaki Kuzuhara

    发明人： Yuji Ando ,  Kazuhiko Onda ,  Masaaki Kuzuhara

    IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L29/10 ,  H01L29/778 ,  H01L29/80 ,  H01L29/161 ,  H01L29/205 ,  H01L29/227

    CPC分类号： H01L29/7783 ,  H01L29/1029

    摘要： The invention provides a compound semiconductor multilayer structure having a two-dimensional electron gas, which is applicable to field effect transistors. A ternary compound InGaAs planar channel layer serving as a quantum well has a variation of an In (indium) fraction in a perpendicular direction to a heterojunction interface. The variation has a step-graded profile with taking a maximum value at or in the vicinity of a portion where the two-dimensional electron gas takes a maximum density. Such quantum well has most large depth at a portion except for adjacent portions to the heterojunction interfaces. Such multilayer structure provides a great electron mobility and a strong electron confinement to major electrons at a high electron density portion. Such multilayer structure provides the large effective electron mobility and the large sheet electron density to the two-dimensional electron gas without a gain of the average of the In (indium) fractions, thereby suppressing the enlargement of the lattice mismatch which causes misfit dislocations in crystals.

    摘要翻译： 本发明提供一种可应用于场效应晶体管的具有二维电子气的化合物半导体多层结构。 用作量子阱的三元化合物InGaAs平面沟道层在与异质结界面垂直的方向上具有In（铟）分数的变化。 该变化具有在二维电子气具有最大密度的部分处或附近具有最大值的阶梯分布。 这样的量子阱在除异质结界面的相邻部分之外的部分具有最大的深度。 这种多层结构在高电子密度部分提供了大的电子迁移率和对主要电子的强电子约束。 这种多层结构为二维电子气体提供了大的有效电子迁移率和大的片状电子密度，而不增加In（铟）级分的平均值，从而抑制晶格失配的扩大，这导致晶体失配位错 。

    Field effect transistor having an improved transistor characteristic
    3.
    发明授权
    Field effect transistor having an improved transistor characteristic 失效
    具有改善的晶体管特性的场效应晶体管

    公开(公告)号：US5466955A

    公开(公告)日：1995-11-14

    申请号：US380251

    申请日：1995-01-30

    申请人： Kenichi Maruhashi ,  Kazuhiko Onda ,  Masaaki Kuzuhara

    发明人： Kenichi Maruhashi ,  Kazuhiko Onda ,  Masaaki Kuzuhara

    IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L29/778 ,  H01L27/02

    CPC分类号： H01L29/7783

    摘要： A field effect transistor (20) comprises a first semiconductor layer (24) and a second semiconductor layer (25) formed on the first semiconductor layer. The first semiconductor layer is an undoped layer and is composed of InGaAs. The second semiconductor layer is composed of InAlGaP and is a doped layer in which an n-type impurity is doped. A heterojunction structure is formed between the first semiconductor layer and the second semiconductor layer.

    摘要翻译： 场效应晶体管（20）包括形成在第一半导体层上的第一半导体层（24）和第二半导体层（25）。 第一半导体层是未掺杂的层，由InGaAs构成。 第二半导体层由InAlGaP构成，是掺杂n型杂质的掺杂层。 在第一半导体层和第二半导体层之间形成异质结结构。

    Field effect transistor having a multi-layer channel
    4.
    发明授权
    Field effect transistor having a multi-layer channel 失效
    具有多层通道的场效应晶体管

    公开(公告)号：US5453631A

    公开(公告)日：1995-09-26

    申请号：US56540

    申请日：1993-05-05

    申请人： Kazuhiko Onda ,  Kenichi Maruhashi ,  Masaaki Kuzuhara

    发明人： Kazuhiko Onda ,  Kenichi Maruhashi ,  Masaaki Kuzuhara

    IPC分类号： H01L29/10 ,  H01L29/778 ,  H01L29/772 ,  H01L29/812

    CPC分类号： H01L29/1029 ,  H01L29/7783

    摘要： In a field effect transistor having a channel layer interposed between heterojunctions, the channel layer has an intermediate layer of undoped InGaAs interposed between first and second channel layers each of which has a composition different from the intermediate layer. The composition of each of the first and the second channel layers may be composed of either InP or InGaAs. The intermediate layer may be formed either by a single layer of InGaAs or by a plurality of intermediate films of InGaAs which have In compositions different from one another when each of the first and the second channel layers is composed of InP. A maximum one of the In compositions is assigned to a selected one of the intermediate films. Alternatively, a selected one of the intermediate films includes a maximum In composition when each of the first and the second channel layers is formed by InGaAs.

    摘要翻译： 在具有介于异质结之间的沟道层的场效应晶体管中，沟道层具有介于第一和第二沟道层之间的未掺杂的InGaAs的中间层，每个沟道层具有不同于中间层的组成。 第一和第二沟道层中的每一个的组成可由InP或InGaAs组成。 中间层可以由单层InGaAs或多个InGaAs中间膜形成，InGaAs的第一和第二通道层中的每一个都由InP构成，其中In组成彼此不同。 将In组合物中的最大一个分配给所选择的一个中间膜。 或者，当第一和第二沟道层中的每一个由InGaAs形成时，所选择的一个中间膜包括最大In组成。

    Field effect transistor
    6.
    发明申请
    Field effect transistor 审中-公开
    场效应晶体管

    公开(公告)号：US20070164326A1

    公开(公告)日：2007-07-19

    申请号：US10588775

    申请日：2005-02-21

    申请人： Yasuhiro Okamoto ,  Yuji Ando ,  Hironobu Miyamoto ,  Tatsuo Nakayama ,  Takashi Inque ,  Masaaki Kuzuhara

    发明人： Yasuhiro Okamoto ,  Yuji Ando ,  Hironobu Miyamoto ,  Tatsuo Nakayama ,  Takashi Inque ,  Masaaki Kuzuhara

    IPC分类号： H01L29/76

    CPC分类号： H01L29/402 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787

    摘要： A field effect transistor includes a semiconductor layer structure including GaN channel layer 12 and AlGa electron supply layer 13, source electrode 1 and drain electrode 3 which are formed on electron supply layer 13 so as to be separated from each other, gate electrode 2 formed between source electrode 1 and drain electrode 3, and SiON film 23 formed on electron supply layer 13. Gate electrode 2 has a field plate portion 5 that projects toward drain electrode 3 in the form of an eave on SiON film 23. The thickness of a portion (field plate layer 23a) of SiON film 23 lying between field plate portion 5 and electron supply layer 13 gradually increases from gate electrode 2 to drain electrode 3.

    摘要翻译： 场效应晶体管包括：半导体层结构，包括形成在电子供给层13上的GaN沟道层12和AlGa电子供给层13，源电极1和漏电极3，栅电极2形成在 源电极1和漏电极3以及形成在电子供给层13上的SiON膜23。 栅电极2具有在SiON膜23上以檐形式向漏电极3突出的场板部5。 位于场板部5与电子供给层13之间的SiON膜23的一部分（场板层23a）的厚度从栅电极2逐渐增加到漏电极3。

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07859014B2

    公开(公告)日：2010-12-28

    申请号：US11571290

    申请日：2005-06-24

    申请人： Tatsuo Nakayama ,  Hironobu Miyamoto ,  Yuji Ando ,  Masaaki Kuzuhara ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Koji Hataya

    发明人： Tatsuo Nakayama ,  Hironobu Miyamoto ,  Yuji Ando ,  Masaaki Kuzuhara ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Koji Hataya

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/78

    摘要： The present invention provides a semiconductor device capable of suppressing current collapse, and also of preventing dielectric breakdown voltage and gain from lowering so as to perform high-voltage operation and realize an ideal high output. On a substrate (101), there are formed a buffer layer (102) made of a first GaN-based semiconductor, a carrier traveling layer (103) made of a second GaN-based semiconductor and a carrier supplying layer (104) made of a third GaN-based semiconductor. A recess structure (108) is made by eliminating a part of a first insulation film (107) and a part of the carrier supplying layer (104). Next, a gate insulation film (109) is deposited, and then a gate electrode (110) is formed so as to fill up the recess portion (108) and cover on over an area where the first insulation film (107) remains so that its portion on the drain electrode side is longer than that on the source electrode side. Such a recess structure is employed so as to provide the high-output semiconductor device capable of performing the high-voltage operation.

    摘要翻译： 本发明提供一种能够抑制电流塌陷以及防止电介质击穿电压和增益降低的半导体器件，从而进行高压操作并实现理想的高输出。 在基板（101）上形成有由第一GaN基半导体构成的缓冲层（102），由第二GaN基半导体构成的载流子移动层（103）和由 第三GaN基半导体。 通过消除第一绝缘膜（107）的一部分和载体供给层（104）的一部分来制造凹陷结构（108）。 接下来，沉积栅极绝缘膜（109），然后形成栅极电极（110），以填充凹部（108）并覆盖在第一绝缘膜（107）保留的区域上，使得 其漏电极侧的部分比源电极侧的部分长。 采用这样的凹部结构来提供能够执行高电压操作的高输出半导体器件。

    Ohmic electrode structure of nitride semiconductor device
    10.
    发明授权
    Ohmic electrode structure of nitride semiconductor device 失效
    氮化物半导体器件的欧姆电极结构

    公开(公告)号：US07459788B2

    公开(公告)日：2008-12-02

    申请号：US10590730

    申请日：2005-02-28

    申请人： Tatsuo Nakayama ,  Yuji Ando ,  Hironobu Miyamoto ,  Masaaki Kuzuhara ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Koji Hataya

    发明人： Tatsuo Nakayama ,  Yuji Ando ,  Hironobu Miyamoto ,  Masaaki Kuzuhara ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Koji Hataya

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L33/40 ,  H01L33/32

    摘要： An ohmic electrode structure of a nitride semiconductor device having a nitride semiconductor. The ohmic electrode structure is provided with a first metal film formed on the nitride semiconductor and a second metal film formed on the first metal film. The first metal film is composed of at least one material selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta and Zr. The second metal film is composed of at least one material different from that of the first metal film (102), selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta, Zr, Pt and Au.

    摘要翻译： 具有氮化物半导体的氮化物半导体器件的欧姆电极结构。 欧姆电极结构设置有形成在氮化物半导体上的第一金属膜和形成在第一金属膜上的第二金属膜。 第一金属膜由选自V，Mo，Ti，Nb，W，Fe，Hf，Re，Ta和Zr中的至少一种材料构成。 第二金属膜由与V，Mo，Ti，Nb，W，Fe，Hf，Re，Ta，Zr，Pt等组成的组中的至少一种不同于第一金属膜的材料构成 和Au。