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    Nitride semiconductor device and a process of manufacturing the same
    1.
    发明授权
    Nitride semiconductor device and a process of manufacturing the same 有权
    氮化物半导体器件及其制造方法

    公开(公告)号：US06876009B2

    公开(公告)日：2005-04-05

    申请号：US10314444

    申请日：2002-12-09

    申请人： Yukio Narukawa ,  Isamu Niki ,  Axel Scherer ,  Koichi Okamoto ,  Yoichi Kawakami ,  Mitsuru Funato ,  Shigeo Fujita

    发明人： Yukio Narukawa ,  Isamu Niki ,  Axel Scherer ,  Koichi Okamoto ,  Yoichi Kawakami ,  Mitsuru Funato ,  Shigeo Fujita

    IPC分类号： H01L21/20 ,  H01L33/24 ,  H01L33/32 ,  H01S5/323 ,  H01L31/0328

    CPC分类号： H01L33/24 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/32

    摘要： The luminous efficiency of a nitride semiconductor device comprising a gallium nitride-based semiconductor layer formed on a dissimilar substrate is improved. An n-type layer formed on the substrate with a buffer layer interposed between them comprises a portion of recess-and-projection shape in section as viewed in the longitudinal direction. Active layers are formed on at least two side faces of the projection with the recess located between them. A p-type layer is formed within the recess. An insulating layer is formed on the top face of the projection, and on the bottom face of the recess. The n-type layer is provided with an n-electrode while the p-type layer is provided with a p-electrode contact layer. As viewed from the p-type layer formed within the recess in the gallium nitride-based semiconductor layer, the active layer and the n-type layer are located in an opposite relation to each other. As viewed from the side face of the recess, the active layer and the p-type layer are formed across the n-type layer.

    摘要翻译： 包含形成在不同基板上的氮化镓系半导体层的氮化物半导体器件的发光效率提高。 形成在基板上的缓冲层形成在其间的n型层包括沿纵向观察的凹凸部的一部分。 有源层形成在凸起的至少两个侧面上，凹部位于它们之间。 在凹部内形成p型层。 绝缘层形成在突起的顶面上，在凹部的底面上。 n型层设置有n电极，而p型层设置有p电极接触层。 从形成在氮化镓系半导体层的凹部内的p型层观察，有源层和n型层位于彼此相反的关系。 从凹部的侧面观察，在n型层上形成有源层和p型层。

    Nitride semiconductor device, and its fabrication process
    2.
    发明授权
    Nitride semiconductor device, and its fabrication process 有权
    氮化物半导体器件及其制造工艺

    公开(公告)号：US07348600B2

    公开(公告)日：2008-03-25

    申请号：US10687768

    申请日：2003-10-20

    申请人： Yukio Narukawa ,  Isamu Niki ,  Axel Scherer ,  Koichi Okamoto ,  Yoichi Kawakami ,  Mitsuru Funato ,  Shigeo Fujita

    发明人： Yukio Narukawa ,  Isamu Niki ,  Axel Scherer ,  Koichi Okamoto ,  Yoichi Kawakami ,  Mitsuru Funato ,  Shigeo Fujita

    IPC分类号： H01L21/15

    CPC分类号： H01L33/24 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/3203 ,  H01S5/34333 ,  H01S2304/12

    摘要： The invention provides a nitride semiconductor light-emitting device comprising gallium nitride semiconductor layers formed on a heterogeneous substrate, wherein light emissions having different light emission wavelengths or different colors are given out of the same active layer. Recesses 106 are formed by etching in the first electrically conductive (n) type semiconductor layer 102 formed on a substrate with a buffer layer interposed between them. Each recess is exposed in plane orientations different from that of the major C plane. For instance, the plane orientation of the A plane is exposed. An active layer is grown and joined on the plane of this plane orientation, on the bottom of the recess and the C-plane upper surface of a non-recess portion. The second electrically conductive (p) type semiconductor layer is formed on the inner surface of the recess. With the active layer formed contiguously to the semiconductor layer in two or more plane orientations, a growth rate difference gives rise to a difference in the thickness across the quantum well (active layer), giving out light emissions having different light emission wavelength peaks or different colors.

    摘要翻译： 本发明提供了一种氮化物半导体发光器件，其包括形成在异质衬底上的氮化镓半导体层，其中具有不同发光波长或不同颜色的发光具有相同的有源层。 凹槽106通过在衬底上形成的第一导电（n）型半导体层102中蚀刻形成，其中缓冲层位于它们之间。 每个凹槽以与主C平面不同的平面取向曝光。 例如，A平面的平面取向被暴露。 活性层生长并在该平面取向的平面上，在凹部的底部和非凹部的C面上表面上接合。 第二导电（p）型半导体层形成在凹部的内表面上。 由于活性层以两个或多个平面取向与半导体层连续形成，所以生长速率差导致量子阱（有源层）上的厚度差异，发出具有不同发光波长峰值或不同的发光波长峰值 颜色。

    Nitride semiconductor device, and its fabrication process
    3.
    发明申请
    Nitride semiconductor device, and its fabrication process 有权
    氮化物半导体器件及其制造工艺

    公开(公告)号：US20050082544A1

    公开(公告)日：2005-04-21

    申请号：US10687768

    申请日：2003-10-20

    申请人： Yukio Narukawa ,  Isamu Niki ,  Axel Scherer ,  Koichi Okamoto ,  Yoichi Kawakami ,  Mitsuru Funato ,  Shigeo Fujita

    发明人： Yukio Narukawa ,  Isamu Niki ,  Axel Scherer ,  Koichi Okamoto ,  Yoichi Kawakami ,  Mitsuru Funato ,  Shigeo Fujita

    IPC分类号： H01L27/15 ,  H01L33/24 ,  H01S5/02 ,  H01S5/32 ,  H01S5/343

    CPC分类号： H01L33/24 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/3203 ,  H01S5/34333 ,  H01S2304/12

    摘要： The invention provides a nitride semiconductor light-emitting device comprising gallium nitride semiconductor layers formed on a heterogeneous substrate, wherein light emissions having different light emission wavelengths or different colors are given out of the same active layer. Recesses 106 are formed by etching in the first electrically conductive (n) type semiconductor layer 102 formed on a substrate with a buffer layer interposed between them. Each recess is exposed in plane orientations different from that of the major C plane. For instance, the plane orientation of the A plane is exposed. An active layer is grown and joined on the plane of this plane orientation, on the bottom of the recess and the C-plane upper surface of a non-recess portion. The second electrically conductive (p) type semiconductor layer is formed on the inner surface of the recess. With the active layer formed contiguously to the semiconductor layer in two or more plane orientations, a growth rate difference gives rise to a difference in the thickness across the quantum well (active layer), giving out light emissions having different light emission wavelength peaks or different colors.

    摘要翻译： 本发明提供了一种氮化物半导体发光器件，其包括形成在异质衬底上的氮化镓半导体层，其中具有不同发光波长或不同颜色的发光具有相同的有源层。 凹槽106通过在衬底上形成的第一导电（n）型半导体层102中蚀刻形成，其中缓冲层位于它们之间。 每个凹槽以与主C平面不同的平面取向曝光。 例如，A平面的平面取向被暴露。 活性层生长并在该平面取向的平面上，在凹部的底部和非凹部的C面上表面上接合。 第二导电（p）型半导体层形成在凹部的内表面上。 由于活性层以两个或多个平面取向与半导体层连续形成，所以生长速率差导致量子阱（有源层）上的厚度差异，发出具有不同发光波长峰值或不同的发光波长峰值 颜色。

    ULTRAVIOLET IRRADIATION DEVICE
    5.
    发明申请
    ULTRAVIOLET IRRADIATION DEVICE 审中-公开
    超紫外线辐射装置

    公开(公告)号：US20120161104A1

    公开(公告)日：2012-06-28

    申请号：US13392560

    申请日：2010-08-03

    申请人： Koichi Okamoto ,  Mitsuru Funato ,  Yoichi Kawakami ,  Ken Kataoka ,  Hiroshige Hata

    发明人： Koichi Okamoto ,  Mitsuru Funato ,  Yoichi Kawakami ,  Ken Kataoka ,  Hiroshige Hata

    IPC分类号： H01L33/06

    CPC分类号： C09K11/64 ,  H01J1/63 ,  H01J63/04 ,  H01J63/06

    摘要： An ultraviolet irradiation device having a simple structure without using a pn junction, which can efficiently utilize a surface plasmon polariton and can emit ultraviolet light of a specific wavelength at a high efficiency. The device has at least one semiconductor multilayer film element and an electron beam irradiation source which are provided in a container having an ultraviolet-ray transmitting window and is vacuum-sealed, wherein the film element has an active layer formed of InxAlyGa1-x-yN (wherein 0≦x≦1, 0≦y≦1, and x+y≦1) and having a single or multiple quantum well structure and a metal film formed on an upper surface of the active layer, composed of metal particles of aluminum or an aluminum alloy and having a nano-structure formed of the metal particles, wherein ultraviolet light is emitted to the outside through the transmitting window by irradiating the film element with electron beams from the irradiation source.

    摘要翻译： 一种紫外线照射装置，其具有简单的结构，不使用pn结，能够有效利用表面等离子体激元，能够高效地发射特定波长的紫外线。 该装置具有至少一个半导体多层膜元件和电子束照射源，它们设置在具有紫外线透射窗口的容器中，并被真空密封，其中该膜元件具有由In x Al y Ga 1-x-y N （其中0＆nlE; x＆nlE; 1,0和nlE; y＆nlE; 1和x + y＆nlE; 1）并且具有单个或多个量子阱结构和形成在有源层的上表面上的金属膜，由金属的铝 或铝合金，并且具有由金属颗粒形成的纳米结构，其中通过用来自照射源的电子束照射膜元件，紫外光通过透射窗口发射到外部。

    Ultraviolet irradiation apparatus
    6.
    发明授权
    Ultraviolet irradiation apparatus 失效
    紫外线照射装置

    公开(公告)号：US08686401B2

    公开(公告)日：2014-04-01

    申请号：US13701213

    申请日：2011-05-30

    申请人： Yoichi Kawakami ,  Mitsuru Funato ,  Takao Oto ,  Ryan Ganipan Banal ,  Masanori Yamaguchi ,  Ken Kataoka ,  Hiroshige Hata

    发明人： Yoichi Kawakami ,  Mitsuru Funato ,  Takao Oto ,  Ryan Ganipan Banal ,  Masanori Yamaguchi ,  Ken Kataoka ,  Hiroshige Hata

    IPC分类号： H01L29/06

    CPC分类号： H01L33/04 ,  F21K9/69 ,  H01J61/305 ,  H01J63/04 ,  H01J63/06

    摘要： Provided is a compact ultraviolet irradiation apparatus which is capable of emitting ultraviolet radiation with high efficiency.This ultraviolet irradiation apparatus includes, in a vessel, a semiconductor multi-layered film element and an electron beam irradiation source for irradiating the semiconductor multi-layered film element with an electron beam, the vessel being hermetically sealed to have a negative internal pressure and having an ultraviolet transmitting window. Furthermore, the semiconductor multi-layered film element includes an active layer having a single quantum well structure or a multi quantum well structure of InxAlyGa1-x-yN (0≦x

    摘要翻译： 提供一种能够高效率地发射紫外线的小型紫外线照射装置。 该紫外线照射装置在容器中包括用电子束照射半导体多层膜元件的半导体多层膜元件和电子束照射源，容器被气密地密封以具有负的内部压力并且具有 紫外线传输窗。 此外，半导体多层膜元件包括具有单一量子阱结构或In x Al y Ga 1-x-y N（0＆nlE; x <1,0

    Scanning probe microscope and method for detecting proximity of probes thereof
    7.
    发明授权
    Scanning probe microscope and method for detecting proximity of probes thereof 失效
    扫描探针显微镜及其探针接近性检测方法

    公开(公告)号：US08479308B2

    公开(公告)日：2013-07-02

    申请号：US13380261

    申请日：2010-06-21

    申请人： Katsuhito Nishimura ,  Yoichi Kawakami ,  Mitsuru Funato ,  Akio Kaneta ,  Tsuneaki Hashimoto

    发明人： Katsuhito Nishimura ,  Yoichi Kawakami ,  Mitsuru Funato ,  Akio Kaneta ,  Tsuneaki Hashimoto

    IPC分类号： G01Q10/00

    CPC分类号： G01Q20/04 ,  G01Q10/045 ,  G01Q10/065 ,  G01Q60/22 ,  G01Q70/06

    摘要： A scanning probe microscope includes: a first and second probes for scanning a sample while maintaining the distance to the sample surface; crystal oscillators holding each of the first and second probes; and a modulation oscillator for providing the first probe with a vibration of a specific frequency which is different from the resonant frequency of each crystal oscillator. A control unit monitors the vibration of the specific frequency of the first and second probes, detects proximity of the first probe and the second probe to each other based on the change of the specific frequencies, and controls the drive of the first and second probes.

    摘要翻译： 扫描探针显微镜包括：第一和第二探针，用于在保持与样品表面的距离的同时扫描样品; 保持第一和第二探针中的每一个的晶体振荡器; 以及用于向第一探头提供与每个晶体振荡器的谐振频率不同的特定频率的振动的调制振荡器。 控制单元监视第一和第二探针的特定频率的振动，基于特定频率的变化来检测第一探针和第二探针的接近度，并且控制第一和第二探针的驱动。

    ULTRAVIOLET IRRADIATION APPARATUS
    8.
    发明申请
    ULTRAVIOLET IRRADIATION APPARATUS 失效
    超紫外线辐射装置

    公开(公告)号：US20130075697A1

    公开(公告)日：2013-03-28

    申请号：US13701213

    申请日：2011-05-30

    申请人： Yoichi Kawakami ,  Mitsuru Funato ,  Takao Oto ,  Ryan Ganipan Banal ,  Masanori Yamaguchi ,  Ken Kataoka ,  Hiroshige Hata

    发明人： Yoichi Kawakami ,  Mitsuru Funato ,  Takao Oto ,  Ryan Ganipan Banal ,  Masanori Yamaguchi ,  Ken Kataoka ,  Hiroshige Hata

    IPC分类号： H01L33/04

    CPC分类号： H01L33/04 ,  F21K9/69 ,  H01J61/305 ,  H01J63/04 ,  H01J63/06

    摘要： Provided is a compact ultraviolet irradiation apparatus which is capable of emitting ultraviolet radiation with high efficiency.This ultraviolet irradiation apparatus includes, in a vessel, a semiconductor multi-layered. film element and an electron beam irradiation source for irradiating the semiconductor multi-layered film element with an electron beam, the vessel being hermetically sealed to have a negative internal pressure and having an ultraviolet transmitting window. Furthermore, the semiconductor multi-layered film element includes an active layer having a single quantum well structure or a multi quantum well structure of InxAlyGa1-x-yN (0≦x

    摘要翻译： 提供一种能够高效率地发射紫外线的小型紫外线照射装置。 该紫外线照射装置在容器中包括多层的半导体。 膜元件和用于用电子束照射半导体多层膜元件的电子束照射源，容器被密封以具有负的内部压力并具有紫外线透过窗口。 此外，半导体多层膜元件包括具有单一量子阱结构或In x Al y Ga 1-x-y N（0＆nlE; x <1,0

    SCANNING PROBE MICROSCOPE AND METHOD FOR DETECTING PROXIMITY OF PROBES THEREOF
    9.
    发明申请
    SCANNING PROBE MICROSCOPE AND METHOD FOR DETECTING PROXIMITY OF PROBES THEREOF 失效
    扫描探针显微镜及其检测方法

    公开(公告)号：US20120124706A1

    公开(公告)日：2012-05-17

    申请号：US13380261

    申请日：2010-06-21

    申请人： Katsuhito Nishimura ,  Yoichi Kawakami ,  Mitsuru Funato ,  Akio Kaneta ,  Tsuneaki Hashimoto

    发明人： Katsuhito Nishimura ,  Yoichi Kawakami ,  Mitsuru Funato ,  Akio Kaneta ,  Tsuneaki Hashimoto

    IPC分类号： G01Q10/00

    CPC分类号： G01Q20/04 ,  G01Q10/045 ,  G01Q10/065 ,  G01Q60/22 ,  G01Q70/06

    摘要： A scanning probe microscope includes: a first and second probes for scanning a sample while maintaining the distance to the sample surface; crystal oscillators holding each of the first and second probes; and a modulation oscillator for providing the first probe with a vibration of a specific frequency which is different from the resonant frequency of each crystal oscillator. A control unit monitors the vibration of the specific frequency of the first and second probes, detects proximity of the first probe and the second probe to each other based on the change of the specific frequencies, and controls the drive of the first and second probes.

    摘要翻译： 扫描探针显微镜包括：第一和第二探针，用于在保持与样品表面的距离的同时扫描样品; 保持第一和第二探针中的每一个的晶体振荡器; 以及用于向第一探头提供与每个晶体振荡器的谐振频率不同的特定频率的振动的调制振荡器。 控制单元监视第一和第二探针的特定频率的振动，基于特定频率的变化来检测第一探针和第二探针的接近度，并且控制第一和第二探针的驱动。