Level conversion circuitry for a semiconductor integrated circuit
    1.
    发明授权
    Level conversion circuitry for a semiconductor integrated circuit 失效
    半导体集成电路的电平转换电路

    公开(公告)号:US5245224A

    公开(公告)日:1993-09-14

    申请号:US845136

    申请日:1992-03-03

    摘要: In an input level converter for TTL-CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the input level converter can be lessened. Similarly, in an output level converter for CMOS-TTL level conversion (or other conversion from CMOS) for the internal logic block operating with the CMOS levels, an output transistor for executing the charge or discharge of the output load capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the output level converter can also be lessened.

    摘要翻译: 在用于CMOS电平工作的内部逻辑块的TTL-CMOS电平转换(或其他转换为CMOS)的输入电平转换器中,用于执行其输出电容的充电或放电的输出晶体管由双极晶体管形成。 因此,可以减小输入电平转换器的传播延迟时间及其电容依赖性。 类似地,在用于CMOS电平操作的内部逻辑块的用于CMOS-TTL电平转换(或来自CMOS的其它转换)的输出电平转换器中,用于执行其输出负载电容的充电或放电的输出晶体管由 双极晶体管。 因此,也可以减小输出电平转换器的传播延迟时间及其电容依赖性。

    BiCMOS tri-state output driver
    4.
    发明授权
    BiCMOS tri-state output driver 失效
    BiCMOS三态输出驱动器

    公开(公告)号:US5512847A

    公开(公告)日:1996-04-30

    申请号:US321012

    申请日:1994-10-06

    摘要: In an input level converter for TTL--CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the input level converter can be lessened. Similarly, in an output level converter for CMOS--TTL level conversion (or other conversion from CMOS) for the internal logic block operating with the CMOS levels, an output transistor for executing the charge or discharge of the output load capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the output level converter can also be lessened.

    摘要翻译: 在用于CMOS电平工作的内部逻辑块的TTL-CMOS电平转换(或其他转换为CMOS)的输入电平转换器中,用于执行其输出电容的充电或放电的输出晶体管由双极晶体管形成。 因此,可以减小输入电平转换器的传播延迟时间及其电容依赖性。 类似地,在用于CMOS电平操作的内部逻辑块的用于CMOS-TTL电平转换(或来自CMOS的其它转换)的输出电平转换器中,用于执行其输出负载电容的充电或放电的输出晶体管由 双极晶体管。 因此,也可以减小输出电平转换器的传播延迟时间及其电容依赖性。

    Bicmos gate array
    7.
    发明授权
    Bicmos gate array 失效
    二门门阵列

    公开(公告)号:US4879480A

    公开(公告)日:1989-11-07

    申请号:US240450

    申请日:1988-09-02

    摘要: In an input level converter for TTL - CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the input level converter can be lessened. Similarly, in an output level converter for CMOS - TTL level conversion (or other conversion from CMOS) for the internal logic block operating with the CMOS levels, an output transistor for executing the charge or discharge of the output load capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the output level converter can also be lessened.

    摘要翻译: 在用于CMOS电平工作的内部逻辑块的TTL-CMOS电平转换(或其他转换为CMOS)的输入电平转换器中,用于执行其输出电容的充电或放电的输出晶体管由双极晶体管形成。 因此,可以减小输入电平转换器的传播延迟时间及其电容依赖性。 类似地,在用于CMOS电平操作的内部逻辑块的用于CMOS-TTL电平转换(或来自CMOS的其它转换)的输出电平转换器中,用于执行其输出负载电容的充电或放电的输出晶体管由 双极晶体管。 因此,也可以减小输出电平转换器的传播延迟时间及其电容依赖性。

    Resistance element for semiconductor integrated circuit
    10.
    发明授权
    Resistance element for semiconductor integrated circuit 失效
    半导体集成电路用电阻元件

    公开(公告)号:US3990092A

    公开(公告)日:1976-11-02

    申请号:US540340

    申请日:1975-01-13

    摘要: A semiconductor integrated circuit contains a resistance element, wherein a low resistance region of a first conductivity type, employed for a circuit resistance, is formed within a high resistance region of a second conductivity type, opposite to the first conductivity type. The low resistance region and the high resistance region are connected in parallel, so as to prevent the formation of a parasitic transistor and a parasitic thyristor.

    摘要翻译: 半导体集成电路包括电阻元件,其中用于电路电阻的第一导电类型的低电阻区域形成在与第一导电类型相反的第二导电类型的高电阻区域内。 低电阻区域和高电阻区域并联连接,以防止形成寄生晶体管和寄生晶闸管。