METHOD OF EVALUATING A PHOTO MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    1.
    发明申请
    METHOD OF EVALUATING A PHOTO MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
    评估照相掩模的方法和制造半导体器件的方法

    公开(公告)号:US20090202924A1

    公开(公告)日:2009-08-13

    申请号:US12360929

    申请日:2009-01-28

    IPC分类号: G03F1/00 H01L21/027

    CPC分类号: G03F1/84

    摘要: A method of evaluating a photo mask, includes measuring each dimension of a plurality of pattern portions of a mask pattern formed on a photo mask, obtaining an inter-pattern distance between the pattern portion and a pattern different from the pattern portion with respect to each of the pattern portions, obtaining a dimensional difference between the measured dimension of the pattern portion and a target dimension of the pattern portion with respect to each of the pattern portions, grouping the dimensional difference obtained for each pattern portion into a plurality of groups in accordance with the inter-pattern distance obtained for each pattern portion, obtaining an evaluation value based on the dimensional difference in each group with respect to each of the groups, and evaluating the photo mask based on the evaluation value.

    摘要翻译: 一种评估光掩模的方法,包括测量形成在光掩模上的掩模图案的多个图案部分的每个尺寸,获得图案部分与不同于图案部分的图案之间的图案间距离 获得图形部分的测量尺寸与图案部分相对于每个图案部分的目标尺寸之间的尺寸差,将根据每个图案部分获得的尺寸差分成多组 对于每个图案部分获得的图案间距离,基于每个组中的每个组的尺寸差获得评估值,并且基于评估值来评估光罩。

    Method of evaluating a photo mask and method of manufacturing a semiconductor device
    2.
    发明授权
    Method of evaluating a photo mask and method of manufacturing a semiconductor device 有权
    评估光掩模的方法和制造半导体器件的方法

    公开(公告)号:US07912275B2

    公开(公告)日:2011-03-22

    申请号:US12360929

    申请日:2009-01-28

    IPC分类号: G06K9/00 G03F1/00

    CPC分类号: G03F1/84

    摘要: A method of evaluating a photo mask, includes measuring each dimension of a plurality of pattern portions of a mask pattern formed on a photo mask, obtaining an inter-pattern distance between the pattern portion and a pattern different from the pattern portion with respect to each of the pattern portions, obtaining a dimensional difference between the measured dimension of the pattern portion and a target dimension of the pattern portion with respect to each of the pattern portions, grouping the dimensional difference obtained for each pattern portion into a plurality of groups in accordance with the inter-pattern distance obtained for each pattern portion, obtaining an evaluation value based on the dimensional difference in each group with respect to each of the groups, and evaluating the photo mask based on the evaluation value.

    摘要翻译: 一种评估光掩模的方法,包括测量形成在光掩模上的掩模图案的多个图案部分的每个尺寸,获得图案部分与不同于图案部分的图案之间的图案间距离 获得图形部分的测量尺寸与图案部分相对于每个图案部分的目标尺寸之间的尺寸差,将根据每个图案部分获得的尺寸差分成多组 对于每个图案部分获得的图案间距离,基于每个组中的每个组的尺寸差获得评估值,并且基于评估值来评估光罩。

    Method of manufacturing photomask
    3.
    发明授权
    Method of manufacturing photomask 有权
    制造光掩模的方法

    公开(公告)号:US06649310B2

    公开(公告)日:2003-11-18

    申请号:US09940578

    申请日:2001-08-29

    IPC分类号: G03F900

    摘要: A method of manufacturing a photomask includes determining an average value of dimensions of a pattern in a photomask. determining an in-plane uniformity of the dimensions, determining an exposure latitude on the basis of the average value and the in-plane uniformity. The exposure latitude depends on dimensional accuracy of the pattern. Judging if the photomask is defective or non-defective is made on the basis of whether or not the exposure latitude falls within a prescribed exposure latitude

    摘要翻译: 制造光掩模的方法包括确定光掩模中图案的尺寸的平均值。 确定尺寸的面内均匀性,基于平均值和平面内均匀性确定曝光宽容度。 曝光宽容度取决于图案的尺寸精度。 根据曝光宽容度是否落在规定的曝光宽容范围内,判断光掩模是否有缺陷或无缺陷

    Projection exposure mask acceptance decision system, projection exposure mask acceptance decision method, method for manufacturing semiconductor device, and computer program product
    5.
    发明申请
    Projection exposure mask acceptance decision system, projection exposure mask acceptance decision method, method for manufacturing semiconductor device, and computer program product 失效
    投影曝光掩模验收决策系统,投影曝光掩模验收决策方法,半导体器件制造方法和计算机程序产品

    公开(公告)号:US20070182941A1

    公开(公告)日:2007-08-09

    申请号:US11653279

    申请日:2007-01-16

    IPC分类号: G03B27/68

    摘要: A projection exposure mask acceptance decision system includes assurance object measuring unit to measure quality assurance objects relating to projection exposure mask, first exposure characteristic deterioration quantity calculating unit to calculate first exposure characteristic deterioration quantity caused by deviations in average values of the quality assurance objects measured by the measuring unit, second exposure characteristic deterioration quantity calculating unit to calculate second exposure characteristic deterioration quantity caused by dispersion in the quality assurance objects measured by the measuring unit, sum calculating unit to calculate simple sum of the first and second quantity, root sum square calculating unit to calculate root sum square of the first and second quantity, entire exposure characteristic deterioration quantity calculating unit to calculate entire exposure characteristic deterioration quantity as an interior division value of the simple sum and root sum square, and judgment unit to judge whether the entire exposure characteristic deterioration quantity is acceptable value.

    摘要翻译: 投影曝光掩模验收判定系统包括:保证对象测量单元,用于测量与投影曝光掩模相关的质量保证对象;第一曝光特性劣化量计算单元,用于计算由质量保证对象的平均值偏差引起的第一曝光特性劣化量, 测量单元,第二曝光特性劣化量计算单元,用于计算由测量单元测量的质量保证对象中由色散引起的第二曝光特性劣化量;和计算单元,计算第一和第二数量的简单和, 计算第一和第二数量的总和平均值的单位,全部曝光特性劣化量计算单元,计算作为简单和的r的内部分割值的整体曝光特性劣化量 总和平方和判断单元判断整个曝光特性劣化量是否为可接受值。

    Photomask quality estimation system and method for use in manufacturing of semiconductor device, and method for manufacturing the semiconductor device
    6.
    发明授权
    Photomask quality estimation system and method for use in manufacturing of semiconductor device, and method for manufacturing the semiconductor device 失效
    用于制造半导体器件的光掩模质量估计系统和方法以及半导体器件的制造方法

    公开(公告)号:US07636910B2

    公开(公告)日:2009-12-22

    申请号:US11475075

    申请日:2006-06-27

    IPC分类号: G06F17/50

    CPC分类号: G03F1/84

    摘要: A photomask quality estimation system comprises a measuring unit, a latitude computation unit and an estimation unit. The measuring unit measures the mask characteristic of each of a plurality of chip patterns formed on a mask substrate. The latitude computation unit computes the exposure latitude of each chip pattern based on the mask characteristic. The estimation unit estimates the quality of each chip pattern based on the exposure latitude.

    摘要翻译: 光掩模质量估计系统包括测量单元,纬度计算单元和估计单元。 测量单元测量形成在掩模基板上的多个芯片图案中的每一个的掩模特性。 纬度计算单元基于掩模特性来计算每个码片模式的曝光宽容度。 估计单元基于曝光宽容度估计每个芯片图案的质量。

    Projection exposure mask acceptance decision system, projection exposure mask acceptance decision method, method for manufacturing semiconductor device, and computer program project
    7.
    发明授权
    Projection exposure mask acceptance decision system, projection exposure mask acceptance decision method, method for manufacturing semiconductor device, and computer program project 失效
    投影曝光掩模验收决策系统,投影曝光掩模验收决策方法,半导体器件制造方法和计算机程序项目

    公开(公告)号:US07446852B2

    公开(公告)日:2008-11-04

    申请号:US11653279

    申请日:2007-01-16

    IPC分类号: G03B27/68 G03B27/52 G03F1/00

    摘要: A projection exposure mask acceptance decision system includes assurance object measuring unit to measure quality assurance objects relating to projection exposure mask, first exposure characteristic deterioration quantity calculating unit to calculate first exposure characteristic deterioration quantity caused by deviations in average values of the quality assurance objects measured by the measuring unit, second exposure characteristic deterioration quantity calculating unit to calculate second exposure characteristic deterioration quantity caused by dispersion in the quality assurance objects measured by the measuring unit, sum calculating unit to calculate simple sum of the first and second quantity, root sum square calculating unit to calculate root sum square of the first and second quantity, entire exposure characteristic deterioration quantity calculating unit to calculate entire exposure characteristic deterioration quantity as an interior division value of the simple sum and root sum square, and judgment unit to judge whether the entire exposure characteristic deterioration quantity is acceptable value.

    摘要翻译: 投影曝光掩模验收判定系统包括:保证对象测量单元,用于测量与投影曝光掩模相关的质量保证对象;第一曝光特性劣化量计算单元,用于计算由质量保证对象的平均值偏差引起的第一曝光特性劣化量, 测量单元,第二曝光特性劣化量计算单元,用于计算由测量单元测量的质量保证对象中由色散引起的第二曝光特性劣化量;和计算单元,计算第一和第二数量的简单和, 计算第一和第二数量的总和平均值的单位,全部曝光特性劣化量计算单元,计算作为简单和的r的内部分割值的整体曝光特性劣化量 总和平方和判断单元判断整个曝光特性劣化量是否为可接受值。

    Photomask quality estimation system and method for use in manufacturing of semiconductor device, and method for manufacturing the semiconductor device
    8.
    发明申请
    Photomask quality estimation system and method for use in manufacturing of semiconductor device, and method for manufacturing the semiconductor device 失效
    用于制造半导体器件的光掩模质量估计系统和方法以及半导体器件的制造方法

    公开(公告)号:US20070005280A1

    公开(公告)日:2007-01-04

    申请号:US11475075

    申请日:2006-06-27

    IPC分类号: G06F19/00

    CPC分类号: G03F1/84

    摘要: A photomask quality estimation system comprises a measuring unit, a latitude computation unit and an estimation unit. The measuring unit measures the mask characteristic of each of a plurality of chip patterns formed on a mask substrate. The latitude computation unit computes the exposure latitude of each chip pattern based on the mask characteristic. The estimation unit estimates the quality of each chip pattern based on the exposure latitude.

    摘要翻译: 光掩模质量估计系统包括测量单元,纬度计算单元和估计单元。 测量单元测量形成在掩模基板上的多个芯片图案中的每一个的掩模特性。 纬度计算单元基于掩模特性来计算每个码片模式的曝光宽容度。 估计单元基于曝光宽容度估计每个芯片图案的质量。

    Method for evaluating photo mask and method for manufacturing semiconductor device
    9.
    发明授权
    Method for evaluating photo mask and method for manufacturing semiconductor device 失效
    评估光掩膜的方法和制造半导体器件的方法

    公开(公告)号:US07229721B2

    公开(公告)日:2007-06-12

    申请号:US10705954

    申请日:2003-11-13

    IPC分类号: G03F1/00

    摘要: A method for evaluating a photo mask comprises preparing a photo mask including a unit drawing pattern, finding a dimensional variation relating to the photo mask, the dimensional variation including first and second dimensional variations, the first dimensional variation occurring due to a positional displacement and size mismatch of the unit drawing pattern in the photo mask and the second dimensional variation occurring due to etching and development relating to a manufacturing of the photo mask, estimating a deteriorated amount of an exposure latitude occurring due to the dimensional variation of the photo mask using the dimensional variation and a degree of influence of the dimensional variation for the exposure latitude, and judging quality of the photo mask by comparing the deteriorated amount of the exposure latitude and an allowable deteriorated amount of the exposure latitude.

    摘要翻译: 一种用于评估光掩模的方法包括制备包括单元绘图图案的光掩模,找到与光掩模相关的尺寸变化,包括第一和第二尺寸变化的尺寸变化,由于位置偏移和尺寸而发生的第一尺寸变化 光掩模中的单位绘图图案的不匹配以及由于与光掩模的制造相关的蚀刻和显影而发生的第二尺寸变化,估计由于光掩膜的尺寸变化而产生的曝光宽容度的恶化量, 通过比较曝光宽容度的劣化量和曝光宽容度的允许恶化量来判断曝光宽容度的尺寸变化和影响程度,以及判断光掩模的质量。

    Method of manufacturing a photo mask and method of manufacturing a semiconductor device
    10.
    发明授权
    Method of manufacturing a photo mask and method of manufacturing a semiconductor device 有权
    制造光掩模的方法和制造半导体器件的方法

    公开(公告)号:US07090949B2

    公开(公告)日:2006-08-15

    申请号:US10724738

    申请日:2003-12-02

    IPC分类号: G01F9/00

    CPC分类号: G03F1/36 G03F1/68

    摘要: Disclosed is a method of manufacturing a photo mask comprising preparing mask data for a mask pattern to be formed on a mask substrate, calculating edge moving sensitivity with respect to each of patterns included in the mask pattern using the mask data, the edge moving sensitivity corresponding to a difference between a proper exposure dose and an exposure dose to be set when a pattern edge varies, determining a monitor portion of the mask pattern, based on the calculated edge moving sensitivity, actually forming the mask pattern on the mask substrate, acquiring a dimension of a pattern included in that portion of the mask pattern formed on the mask substrate which corresponds to the monitor portion, determining evaluation value for the mask pattern formed on the mask substrate, based on the acquired dimension, and determining whether the evaluation value satisfies predetermined conditions.

    摘要翻译: 公开了一种制造光掩模的方法,其包括:对掩模基板上形成的掩模图案准备掩模数据,使用掩模数据计算相对于包含在掩模图案中的每个图案的边缘移动灵敏度,边缘移动灵敏度对应 对于在图案边缘变化时要设置的适当曝光剂量和曝光剂量之间的差异,基于计算出的边缘移动灵敏度确定掩模图案的监视部分,实际在掩模基板上形成掩模图案,获取 基于所获取的尺寸,确定在掩模基板上形成的掩模图案的评估值,并且确定评估值是否满足的掩模图案的形成在掩模基板上的对应于监视部分的掩模图案的部分中的图案的尺寸 预定条件。