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    METHOD OF EVALUATING A PHOTO MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    1.
    发明申请
    METHOD OF EVALUATING A PHOTO MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
    评估照相掩模的方法和制造半导体器件的方法

    公开(公告)号：US20090202924A1

    公开(公告)日：2009-08-13

    申请号：US12360929

    申请日：2009-01-28

    申请人： Hiroki YAMAMOTO ,  Masamitsu Itoh ,  Osamu Ikenaga ,  Shoji Mimotogi ,  Hideki Kanai ,  Yukiyasu Arisawa

    发明人： Hiroki YAMAMOTO ,  Masamitsu Itoh ,  Osamu Ikenaga ,  Shoji Mimotogi ,  Hideki Kanai ,  Yukiyasu Arisawa

    IPC分类号： G03F1/00 ,  H01L21/027

    CPC分类号： G03F1/84

    摘要： A method of evaluating a photo mask, includes measuring each dimension of a plurality of pattern portions of a mask pattern formed on a photo mask, obtaining an inter-pattern distance between the pattern portion and a pattern different from the pattern portion with respect to each of the pattern portions, obtaining a dimensional difference between the measured dimension of the pattern portion and a target dimension of the pattern portion with respect to each of the pattern portions, grouping the dimensional difference obtained for each pattern portion into a plurality of groups in accordance with the inter-pattern distance obtained for each pattern portion, obtaining an evaluation value based on the dimensional difference in each group with respect to each of the groups, and evaluating the photo mask based on the evaluation value.

    摘要翻译： 一种评估光掩模的方法，包括测量形成在光掩模上的掩模图案的多个图案部分的每个尺寸，获得图案部分与不同于图案部分的图案之间的图案间距离 获得图形部分的测量尺寸与图案部分相对于每个图案部分的目标尺寸之间的尺寸差，将根据每个图案部分获得的尺寸差分成多组 对于每个图案部分获得的图案间距离，基于每个组中的每个组的尺寸差获得评估值，并且基于评估值来评估光罩。

    Method of evaluating a photo mask and method of manufacturing a semiconductor device
    2.
    发明授权
    Method of evaluating a photo mask and method of manufacturing a semiconductor device 有权
    评估光掩模的方法和制造半导体器件的方法

    公开(公告)号：US07912275B2

    公开(公告)日：2011-03-22

    申请号：US12360929

    申请日：2009-01-28

    申请人： Hiroki Yamamoto ,  Masamitsu Itoh ,  Osamu Ikenaga ,  Shoji Mimotogi ,  Hideki Kanai ,  Yukiyasu Arisawa

    发明人： Hiroki Yamamoto ,  Masamitsu Itoh ,  Osamu Ikenaga ,  Shoji Mimotogi ,  Hideki Kanai ,  Yukiyasu Arisawa

    IPC分类号： G06K9/00 ,  G03F1/00

    CPC分类号： G03F1/84

    摘要： A method of evaluating a photo mask, includes measuring each dimension of a plurality of pattern portions of a mask pattern formed on a photo mask, obtaining an inter-pattern distance between the pattern portion and a pattern different from the pattern portion with respect to each of the pattern portions, obtaining a dimensional difference between the measured dimension of the pattern portion and a target dimension of the pattern portion with respect to each of the pattern portions, grouping the dimensional difference obtained for each pattern portion into a plurality of groups in accordance with the inter-pattern distance obtained for each pattern portion, obtaining an evaluation value based on the dimensional difference in each group with respect to each of the groups, and evaluating the photo mask based on the evaluation value.

    摘要翻译： 一种评估光掩模的方法，包括测量形成在光掩模上的掩模图案的多个图案部分的每个尺寸，获得图案部分与不同于图案部分的图案之间的图案间距离 获得图形部分的测量尺寸与图案部分相对于每个图案部分的目标尺寸之间的尺寸差，将根据每个图案部分获得的尺寸差分成多组 对于每个图案部分获得的图案间距离，基于每个组中的每个组的尺寸差获得评估值，并且基于评估值来评估光罩。

    Method of manufacturing photomask
    3.
    发明授权
    Method of manufacturing photomask 有权
    制造光掩模的方法

    公开(公告)号：US06649310B2

    公开(公告)日：2003-11-18

    申请号：US09940578

    申请日：2001-08-29

    申请人： Masamitsu Itoh ,  Shigeki Nojima ,  Shoji Mimotogi ,  Osamu Ikenaga

    发明人： Masamitsu Itoh ,  Shigeki Nojima ,  Shoji Mimotogi ,  Osamu Ikenaga

    IPC分类号： G03F900

    CPC分类号： G03F1/32 ,  G03F7/70558 ,  G03F7/70591 ,  G03F7/70625

    摘要： A method of manufacturing a photomask includes determining an average value of dimensions of a pattern in a photomask. determining an in-plane uniformity of the dimensions, determining an exposure latitude on the basis of the average value and the in-plane uniformity. The exposure latitude depends on dimensional accuracy of the pattern. Judging if the photomask is defective or non-defective is made on the basis of whether or not the exposure latitude falls within a prescribed exposure latitude

    摘要翻译： 制造光掩模的方法包括确定光掩模中图案的尺寸的平均值。 确定尺寸的面内均匀性，基于平均值和平面内均匀性确定曝光宽容度。 曝光宽容度取决于图案的尺寸精度。 根据曝光宽容度是否落在规定的曝光宽容范围内，判断光掩模是否有缺陷或无缺陷

    Plasma processing apparatus and plasma processing method
    6.
    发明授权
    Plasma processing apparatus and plasma processing method 失效
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US5792376A

    公开(公告)日：1998-08-11

    申请号：US580824

    申请日：1995-12-29

    申请人： Hideki Kanai ,  Ikuo Yoneda ,  Masamitsu Itoh

    发明人： Hideki Kanai ,  Ikuo Yoneda ,  Masamitsu Itoh

    IPC分类号： H01J37/32 ,  H05H1/00

    CPC分类号： H01J37/32082 ,  H01J37/32532 ,  H01J2237/3343

    摘要： A plasma processing apparatus includes a first electrode which is substantially flat and has a substrate mounting region mounted with a substrate to be treated, a chamber for containing the first electrode, gas introducing means for introducing a predetermined gas into the chamber, gas exhausting means for exhausting the gas from the chamber, a second electrode constituted of one of a metal portion of the chamber and a metal plate provided inside the chamber, power supply means for supplying high-frequency power between the first electrode and the second electrode, and an insulative cover for covering a surface of the first electrode other than the substrate mounting region. The substrate mounting region is formed as a convex portion on the first electrode, and an outside shape thereof is smaller than that of the substrate. The substrate is mounted on the substrate mounting region so as to completely cover the substrate mounting region.

    摘要翻译： 一种等离子体处理装置，包括：第一电极，其基本上是平的，并且具有安装有要处理的基板的基板安装区域，用于容纳第一电极的室，用于将预定气体引入到所述室中的气体引入装置，用于 从所述室排出气体，由所述室的金属部分和设置在所述室内的金属板之一构成的第二电极，用于在所述第一电极和所述第二电极之间提供高频电力的电源装置和绝缘体 盖，用于覆盖除基板安装区域之外的第一电极的表面。 基板安装区域形成为第一电极上的凸部，其外形小于基板的外形。 基板安装在基板安装区域上，以完全覆盖基板安装区域。

    Exposure mask manufacturing method, drawing apparatus, semiconductor device manufacturing method, and mask blanks product
    7.
    发明授权
    Exposure mask manufacturing method, drawing apparatus, semiconductor device manufacturing method, and mask blanks product 有权
    曝光掩模制造方法，绘图装置，半导体器件制造方法和掩模毛坯产品

    公开(公告)号：US08533634B2

    公开(公告)日：2013-09-10

    申请号：US12659396

    申请日：2010-03-08

    申请人： Masamitsu Itoh

    发明人： Masamitsu Itoh

    IPC分类号： G06F17/50 ,  G03F1/00 ,  H01L21/00 ,  H01L21/20 ,  H01L21/311

    CPC分类号： G03F1/70

    摘要： A method of manufacturing an exposure mask includes generating or preparing flatness variation data relating to a mask blanks substrate to be processed into an exposure mask, the flatness variation data being data relating to change of flatness of the mask blank substrate caused when the mask blank substrate is chucked by a chuck unit of an exposure apparatus, generating position correction, data of a pattern to be drawn on the mask blanks substrate based on the flatness variation data such that a mask pattern of the exposure mask comes to a predetermined position in a state that the exposure mask is chucked by the chuck unit, and drawing a pattern on the mask blanks substrate, the drawing the pattern including drawing the pattern with correcting a drawing position of the pattern and inputting drawing data corresponding to the pattern and the position correction data into a drawing apparatus.

    摘要翻译： 制造曝光掩模的方法包括：生成或准备与待处理的掩模坯料基板相关的平坦度变化数据为曝光掩模，平坦度变化数据是与掩模坯料基板 由曝光装置的卡盘单元夹持，基于平坦度变化数据产生位置校正，要在掩模毛坯基板上绘制的图案的数据，使得曝光掩模的掩模图案在状态下到达预定位置 曝光掩模由卡盘单元卡住，并且在掩模坯料基板上绘制图案，绘制包括绘制图案的图案，校正图案的绘图位置并输入与图案相对应的绘图数据和位置校正数据 成为绘图装置。

    Pattern verification-test method, optical image intensity distribution acquisition method, and computer program
    9.
    发明授权
    Pattern verification-test method, optical image intensity distribution acquisition method, and computer program 有权
    模式验证测试方法，光学图像强度分布采集方法和计算机程序

    公开(公告)号：US08407629B2

    公开(公告)日：2013-03-26

    申请号：US13491639

    申请日：2012-06-08

    申请人： Masamitsu Itoh ,  Satoshi Tanaka

    发明人： Masamitsu Itoh ,  Satoshi Tanaka

    IPC分类号： G06F17/50

    CPC分类号： G03F1/86

    摘要： A pattern verification-test method according to an embodiment of the present invention includes: deriving an illumination condition at a verification-test subject position in a photomask surface of a mask pattern as a verification or a test subject based on the verification-test subject position and illumination condition information about a distribution of an illumination condition in a photomask surface of exposure light incident on the mask pattern, performing lithography simulation on the mask pattern based on the derived illumination condition and the mask pattern, and verifying or testing the mask pattern based on a result of the lithography simulation.

    摘要翻译： 根据本发明的实施例的图案验证测试方法包括：基于验证测试对象位置，在掩模图案的光掩模表面中的验证测试对象位置处作为验证或测试对象导出照明条件 以及关于入射到掩模图案的曝光光的光掩模表面中的照明条件的分布的照明条件信息，基于导出的照明条件和掩模图案对掩模图案进行光刻模拟，以及基于掩模图案的验证或测试 在光刻模拟的结果。

    Photomask manufacturing method and semiconductor device manufacturing method
    10.
    发明授权
    Photomask manufacturing method and semiconductor device manufacturing method 有权

    公开(公告)号：US08407628B2

    公开(公告)日：2013-03-26

    申请号：US12770062

    申请日：2010-04-29

    申请人： Masamitsu Itoh ,  Takashi Hirano ,  Kazuya Fukuhara

    发明人： Masamitsu Itoh ,  Takashi Hirano ,  Kazuya Fukuhara

    IPC分类号： G06F17/50 ,  G03F1/00

    CPC分类号： G06F17/5081 ,  G03F1/50

    摘要： This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.