公开(公告)号：US20080061702A1

公开(公告)日：2008-03-13

申请号：US11684199

申请日：2007-03-09

申请人： Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy ,  Sung Chang Park ,  Yung Hee Lee

发明人： Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy ,  Sung Chang Park ,  Yung Hee Lee

IPC分类号： H05H1/00

CPC分类号： H01J37/321 ,  H01J37/32091

摘要： An apparatus and method to generate plasma which can be applied to semiconductor processing. The apparatus includes a chamber having a plasma generating space defined therein, a lower electrode positioned within the chamber, an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source, a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, and a power supply to supply power to the first and second plasma generating sources.

摘要翻译： 一种可应用于半导体处理的等离子体生成装置和方法。 该装置包括具有限定在其中的等离子体产生空间的腔室，位于腔室内的下部电极，面对下部电极的上部电极，并设置在腔室内以构成第一等离子体发生源，第二等离子体发生源位于较高 位于上电极的下表面，并且设置在上电极的外周;以及电源，用于向第一和第二等离子体发生源供电。

公开(公告)号：US07804250B2

公开(公告)日：2010-09-28

申请号：US11684199

申请日：2007-03-09

申请人： Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy ,  Sung Chang Park ,  Yung Hee Lee

发明人： Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy ,  Sung Chang Park ,  Yung Hee Lee

IPC分类号： H05B6/00

CPC分类号： H01J37/321 ,  H01J37/32091

摘要： An apparatus and method to generate plasma which can be applied to semiconductor processing. The apparatus includes a chamber having a plasma generating space defined therein, a lower electrode positioned within the chamber, an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source, a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, and a power supply to supply power to the first and second plasma generating sources.

摘要翻译： 一种可应用于半导体处理的等离子体生成装置和方法。 该装置包括具有限定在其中的等离子体产生空间的腔室，位于腔室内的下部电极，面对下部电极的上部电极，并设置在腔室内以构成第一等离子体发生源，第二等离子体发生源位于较高 位于上电极的下表面，并且设置在上电极的外周;以及电源，用于向第一和第二等离子体发生源供电。

公开(公告)号：US20080032427A1

公开(公告)日：2008-02-07

申请号：US11751812

申请日：2007-05-22

申请人： Yung Hee Lee ,  Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy

发明人： Yung Hee Lee ,  Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy

IPC分类号： H01L21/66

CPC分类号： H01L21/67069 ,  H01J37/32412 ,  H01J37/32422 ,  H01L21/67253

摘要： An ion analysis system to measure ion energy distribution at several points during a process of manufacturing a semiconductor circuit includes at least two ion flux sensors combined in a single system to measure an ion energy distribution function, each of the ion flux sensors having cells including an opening of 50 micrometers or less.

摘要翻译： 一种用于在制造半导体电路的过程中测量几个点处的离子能量分布的离子分析系统包括组合在单个系统中以测量离子能量分布函数的至少两个离子通量传感器，每个离子通量传感器具有包括 开口为50微米以下。

公开(公告)号：US20060152164A1

公开(公告)日：2006-07-13

申请号：US11208728

申请日：2005-08-23

申请人： Yung Hee Lee ,  Yun Kwang Jeon ,  Jin Seok Lee

发明人： Yung Hee Lee ,  Yun Kwang Jeon ,  Jin Seok Lee

IPC分类号： H01J1/46

CPC分类号： H01J37/08 ,  H01J27/024

摘要： An ion beam extractor controls a direction and an intensity of ion beams by adjusting a voltage applied to a grid having slits formed therein, thereby enhancing uniformity of an etching rate of a wafer, leading to an increase of productivity of semiconductor diodes. The ion beam extractor comprises an ion source to produce an ion beam and at least one grid located at a rear end of the ion source in a progressing path of the ion beam produced by the ion source to adjust a direction of the ion beam by controlling a voltage applied to the at least one grid.

摘要翻译： 离子束提取器通过调节施加到其上形成有狭缝的栅格的电压来控制离子束的方向和强度，从而提高晶片的蚀刻速率的均匀性，从而提高半导体二极管的生产率。 离子束提取器包括离子源以产生离子束和位于离子源的后端处的离子源的至少一个格栅，在由离子源产生的离子束的前进路径中，通过控制离子束来调节离子束的方向 施加到所述至少一个栅格的电压。

公开(公告)号：US10157989B2

公开(公告)日：2018-12-18

申请号：US13478548

申请日：2012-05-23

申请人： Chang Seung Lee ,  Sang Wook Kim ,  Seong Jun Park ,  David Seo ,  Young Jun Yun ,  Yung Hee Lee

发明人： Chang Seung Lee ,  Sang Wook Kim ,  Seong Jun Park ,  David Seo ,  Young Jun Yun ,  Yung Hee Lee

IPC分类号： H01L29/00 ,  H01L21/00 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L29/861 ,  H01L29/16 ,  H01L29/786

摘要： A method of manufacturing a graphene electronic device may include forming a metal compound layer and a catalyst layer on a substrate, the catalyst layer including a metal element in the metal compound layer, growing a graphene layer on the catalyst layer, and converting the catalyst layer into a portion of the metal compound layer.

公开(公告)号：US20130171781A1

公开(公告)日：2013-07-04

申请号：US13478548

申请日：2012-05-23

申请人： Chang Seung Lee ,  Sang Wook Kim ,  Seong Jun Park ,  David Seo ,  Young Jun Yun ,  Yung Hee Lee

发明人： Chang Seung Lee ,  Sang Wook Kim ,  Seong Jun Park ,  David Seo ,  Young Jun Yun ,  Yung Hee Lee

IPC分类号： H01L21/336 ,  H01L21/329

CPC分类号： H01L29/4232 ,  H01L29/1606 ,  H01L29/66431 ,  H01L29/7781 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/861

摘要： A method of manufacturing a graphene electronic device may include forming a metal compound layer and a catalyst layer on a substrate, the catalyst layer including a metal element in the metal compound layer, growing a graphene layer on the catalyst layer, and converting the catalyst layer into a portion of the metal compound layer.

摘要翻译： 石墨烯电子器件的制造方法可以包括在基板上形成金属化合物层和催化剂层，催化剂层在金属化合物层中包含金属元素，在催化剂层上生长石墨烯层，并将催化剂层 进入金属化合物层的一部分。

公开(公告)号：US20080156771A1

公开(公告)日：2008-07-03

申请号：US11965956

申请日：2007-12-28

申请人： Yun Kwang JEON ,  Jin Seok Lee ,  Yung Hee Lee ,  Gi Tae Kim

发明人： Yun Kwang JEON ,  Jin Seok Lee ,  Yung Hee Lee ,  Gi Tae Kim

IPC分类号： C23F1/00 ,  B44C1/22

CPC分类号： H01J37/3233 ,  H01J37/32357

摘要： An etching apparatus using a neutral beam includes an electron emission unit to convert an ion beam, extracted from plasma by a plurality of grids, into a neutral beam by colliding the ion beam with electrons to prevent the ion beam from physically colliding with the electron emission unit, thus preventing the damage to a neutralization unit and generation of foreign substances with a simple structure. Further, the etching apparatus converts the ion beam into the neutral beam at a high neutralizing efficiency without causing directionality and energy losses, and generates a neutral beam having a large area, thus uniformly etching a semiconductor wafer.

摘要翻译： 使用中性光束的蚀刻装置包括电子发射单元，用于通过使离子束与电子碰撞来将通过多个栅极从等离子体提取的离子束转换成中性束，以防止离子束与电子发射物理碰撞 单元，从而防止中和单元的损坏和结构简单的异物的产生。 此外，蚀刻装置以高中和效率将离子束转换成中性光束，而不引起方向性和能量损失，并且产生具有大面积的中性光束，因此均匀地蚀刻半导体晶片。

公开(公告)号：US07285788B2

公开(公告)日：2007-10-23

申请号：US11208728

申请日：2005-08-23

申请人： Yung Hee Lee ,  Yun Kwang Jeon ,  Jin Seok Lee

发明人： Yung Hee Lee ,  Yun Kwang Jeon ,  Jin Seok Lee

IPC分类号： H01J27/00 ,  H01J49/42

CPC分类号： H01J37/08 ,  H01J27/024

摘要： An ion beam extractor controls a direction and an intensity of ion beams by adjusting a voltage applied to a grid having slits formed therein, thereby enhancing uniformity of an etching rate of a wafer, leading to an increase of productivity of semiconductor diodes. The ion beam extractor comprises an ion source to produce an ion beam and at least one grid located at a rear end of the ion source in a progressing path of the ion beam produced by the ion source to adjust a direction of the ion beam by controlling a voltage applied to the at least one grid.

摘要翻译： 离子束提取器通过调节施加到其上形成有狭缝的栅格的电压来控制离子束的方向和强度，从而提高晶片的蚀刻速率的均匀性，从而提高半导体二极管的生产率。 离子束提取器包括离子源以产生离子束和位于离子源的后端处的离子源的至少一个格栅，在由离子源产生的离子束的前进路径中，通过控制离子束来调节离子束的方向 施加到所述至少一个栅格的电压。