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    Method for manufacturing semiconductor device
    1.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08551873B2

    公开(公告)日：2013-10-08

    申请号：US13610142

    申请日：2012-09-11

    申请人： Yusuke Onuki ,  Takehito Okabe ,  Hideaki Ishino

    发明人： Yusuke Onuki ,  Takehito Okabe ,  Hideaki Ishino

    IPC分类号： H01L21/28

    CPC分类号： H01L21/28247 ,  H01L27/14649 ,  H01L27/14689 ,  H01L29/6656 ,  H01L29/7833

    摘要： A method for manufacturing a semiconductor device having a MOS transistor, includes forming a gate electrode material layer on a first insulating film formed on a semiconductor substrate, forming an etching mask on the gate electrode material layer, forming a gate electrode by patterning the gate electrode material layer such that a protective film that protects at least a lower portion of a side face of the gate electrode and a portion of the first insulating film, which is adjacent to the side face, is formed while the gate electrode material layer is patterned, forming a second insulating film on the semiconductor substrate on which the gate electrode is formed, and forming an interlayer insulation film on the second insulating film.

    摘要翻译： 一种制造具有MOS晶体管的半导体器件的方法，包括在形成在半导体衬底上的第一绝缘膜上形成栅电极材料层，在栅电极材料层上形成蚀刻掩模，通过图案化栅电极形成栅电极 材料层，使得在对栅电极材料层进行图案化的同时形成保护栅电极的侧面的至少下部和与侧面相邻的第一绝缘膜的一部分的保护膜， 在其上形成有栅电极的半导体衬底上形成第二绝缘膜，并在第二绝缘膜上形成层间绝缘膜。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20130089975A1

    公开(公告)日：2013-04-11

    申请号：US13610142

    申请日：2012-09-11

    申请人： Yusuke Onuki ,  Takehito Okabe ,  Hideaki Ishino

    发明人： Yusuke Onuki ,  Takehito Okabe ,  Hideaki Ishino

    IPC分类号： H01L21/28

    CPC分类号： H01L21/28247 ,  H01L27/14649 ,  H01L27/14689 ,  H01L29/6656 ,  H01L29/7833

    摘要： A method for manufacturing a semiconductor device having a MOS transistor, includes forming a gate electrode material layer on a first insulating film formed on a semiconductor substrate, forming an etching mask on the gate electrode material layer, forming a gate electrode by patterning the gate electrode material layer such that a protective film that protects at least a lower portion of a side face of the gate electrode and a portion of the first insulating film, which is adjacent to the side face, is formed while the gate electrode material layer is patterned, forming a second insulating film on the semiconductor substrate on which the gate electrode is formed, and forming an interlayer insulation film on the second insulating film.

    摘要翻译： 一种制造具有MOS晶体管的半导体器件的方法，包括在形成在半导体衬底上的第一绝缘膜上形成栅电极材料层，在栅电极材料层上形成蚀刻掩模，通过图案化栅电极形成栅电极 材料层，使得在对栅电极材料层进行图案化的同时形成保护栅电极的侧面的至少下部和与侧面相邻的第一绝缘膜的一部分的保护膜， 在其上形成有栅电极的半导体衬底上形成第二绝缘膜，并在第二绝缘膜上形成层间绝缘膜。

    Method of manufacturing photoelectric conversion device
    3.
    发明授权
    Method of manufacturing photoelectric conversion device 有权
    制造光电转换装置的方法

    公开(公告)号：US08293559B2

    公开(公告)日：2012-10-23

    申请号：US13161959

    申请日：2011-06-16

    申请人： Takehito Okabe ,  Hiroaki Naruse ,  Ryuichi Mishima ,  Kouhei Hashimoto

    发明人： Takehito Okabe ,  Hiroaki Naruse ,  Ryuichi Mishima ,  Kouhei Hashimoto

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14687 ,  H01L21/28518 ,  H01L27/14632

    摘要： In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion layer or gate electrode of a MOS transistor in the peripheral circuit region to react with a high melting point metal, then an insulating layer is formed in the pixel region and the peripheral circuit region after the step of forming a semiconductor compound layer. A contact hole is formed in the insulating layer to expose a diffusion layer in the pixel region, and a contact hole is formed in the insulating layer to expose the semiconductor compound layer formed in the peripheral circuit region. These holes are formed at different timings. Prior to forming the hole which is formed later, a contact plug is formed in the contact hole which is formed earlier.

    摘要翻译： 在制造具有像素区域和外围电路区域的光电转换装置的方法中，通过使外围电路区域中的MOS晶体管的扩散层或栅电极的表面与高电位反应来形成半导体化合物层 熔点金属，则在形成半导体化合物层的步骤之后，在像素区域和外围电路区域中形成绝缘层。 在绝缘层中形成接触孔，以露出像素区域中的扩散层，并且在绝缘层中形成接触孔以暴露形成在外围电路区域中的半导体化合物层。 这些孔在不同的时刻形成。 在形成稍后形成的孔之前，在较早形成的接触孔中形成接触塞。

    Solid-state image pickup apparatus, image pickup system including solid-state image pickup apparatus, and method for manufacturing solid-state image pickup apparatus
    6.
    发明授权
    Solid-state image pickup apparatus, image pickup system including solid-state image pickup apparatus, and method for manufacturing solid-state image pickup apparatus 有权
    固态图像拾取装置，包括固态图像拾取装置的图像拾取系统和用于制造固态图像拾取装置的方法

    公开(公告)号：US08987852B2

    公开(公告)日：2015-03-24

    申请号：US13366189

    申请日：2012-02-03

    申请人： Takehito Okabe ,  Kentarou Suzuki ,  Taskashi Usui ,  Taro Kato ,  Mineo Shimotsusa ,  Shunsuke Takimoto

    发明人： Takehito Okabe ,  Kentarou Suzuki ,  Taskashi Usui ,  Taro Kato ,  Mineo Shimotsusa ,  Shunsuke Takimoto

    IPC分类号： H01L21/00 ,  H01L27/146

    CPC分类号： H01L27/14685 ,  H01L27/14629 ,  H01L27/14632 ,  H01L27/14641 ,  H01L27/14687 ,  H01L27/14689

    摘要： A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member.

    摘要翻译： 提供了一种用于制造固态图像拾取装置的方法。 图像拾取装置包括设置在半导体衬底上的光电转换部分，在光电转换部分上的第一绝缘膜，用作抗反射膜，第一绝缘膜上的与光电转换部相对设置的第二绝缘膜，以及 具有包层和芯的波导，其底部设置在第二绝缘膜上。 该方法包括通过各向异性蚀刻设置在光电转换部分上的部件的一部分形成开口，从而形成包层，并在开口中形成芯。 在该方法中，在第二绝缘膜的蚀刻速率低于构件的蚀刻速率的条件下进行蚀刻。

    Semiconductor device manufacturing method for forming an opening to provide a plug
    7.
    发明授权
    Semiconductor device manufacturing method for forming an opening to provide a plug 有权
    用于形成开口以提供插头的半导体器件制造方法

    公开(公告)号：US08846436B2

    公开(公告)日：2014-09-30

    申请号：US13366577

    申请日：2012-02-06

    申请人： Kentaro Suzuki ,  Takehito Okabe ,  Hiroaki Sano ,  Junji Iwata

    发明人： Kentaro Suzuki ,  Takehito Okabe ,  Hiroaki Sano ,  Junji Iwata

    IPC分类号： H01L21/00 ,  H01L27/146

    CPC分类号： H01L27/14687 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14685

    摘要： An interlayer insulating film is disposed above an image pickup region and a peripheral region of the semiconductor substrate. An opening is formed in the interlayer insulating film at a position overlying a photoelectric conversion portion. A waveguide member is formed above the image pickup region and the peripheral region of the semiconductor substrate. A part of the waveguide member, which part is disposed above the peripheral region, is removed such that the interlayer insulating film is exposed.

    摘要翻译： 层间绝缘膜设置在半导体衬底的图像拾取区域和周边区域之上。 在覆盖光电转换部的位置处，在层间绝缘膜上形成有开口部。 在图像拾取区域和半导体衬底的周边区域之上形成波导构件。 去除部分设置在周边区域上方的部分波导部件，使得层间绝缘膜露出。

    Method of manufacturing photoelectric conversion device
    9.
    发明授权
    Method of manufacturing photoelectric conversion device 有权
    制造光电转换装置的方法

    公开(公告)号：US07993951B2

    公开(公告)日：2011-08-09

    申请号：US12792844

    申请日：2010-06-03

    申请人： Takehito Okabe ,  Hiroaki Naruse ,  Ryuichi Mishima ,  Kouhei Hashimoto

    发明人： Takehito Okabe ,  Hiroaki Naruse ,  Ryuichi Mishima ,  Kouhei Hashimoto

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14687 ,  H01L21/28518 ,  H01L27/14632

    摘要： In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion layer or gate electrode of a MOS transistor in the peripheral circuit region to react with a high melting point metal, then an insulating layer is formed in the pixel region and the peripheral circuit region after the step of forming a semiconductor compound layer. A contact hole is formed in the insulating layer to expose a diffusion layer in the pixel region, and a contact hole is formed in the insulating layer to expose the semiconductor compound layer formed in the peripheral circuit region. These holes are formed at different timings. Prior to forming the hole which is formed later, a contact plug is formed in the contact hole which is formed earlier.

    摘要翻译： 在制造具有像素区域和外围电路区域的光电转换装置的方法中，通过使外围电路区域中的MOS晶体管的扩散层或栅电极的表面与高电位反应来形成半导体化合物层 熔点金属，则在形成半导体化合物层的步骤之后，在像素区域和外围电路区域中形成绝缘层。 在绝缘层中形成接触孔，以露出像素区域中的扩散层，并且在绝缘层中形成接触孔以暴露形成在外围电路区域中的半导体化合物层。 这些孔在不同的时刻形成。 在形成稍后形成的孔之前，在较早形成的接触孔中形成接触塞。