公开(公告)号：US5075746A

公开(公告)日：1991-12-24

申请号：US380640

申请日：1989-07-14

申请人： Yutaka Hayashi ,  Mitsuyuki Yamanaka ,  Takashi Yoshimi

发明人： Yutaka Hayashi ,  Mitsuyuki Yamanaka ,  Takashi Yoshimi

IPC分类号： H01L27/088 ,  H01L21/336 ,  H01L21/337 ,  H01L21/338 ,  H01L21/8234 ,  H01L21/84 ,  H01L29/43 ,  H01L29/78 ,  H01L29/786 ,  H01L29/808 ,  H01L29/812

CPC分类号： H01L29/78696 ,  H01L21/84 ,  H01L29/432 ,  H01L29/66757 ,  H01L29/66848 ,  H01L29/66893 ,  H01L29/78663 ,  H01L29/8086 ,  H01L29/8126

摘要： A thin film field effect transistor comprising a source electrode and a drain electrode joined to a first semiconductor layer respectively through first and second portions of a second doped semiconductor layer, a gate insulating layer, and a gate electrode capacity-coupled through the gate insulating layer with a portion of the first semiconductor layer, in which a channel is formed, corresponding to a gap between the source electrode and the drain electrode. A doped intermediate semiconductor layer is formed in contact with the channel in the first semiconductor layer. The gate threshold voltage of the thin film field effect transistor can be varied by selectively varying the thickness of the doped intermediate semiconductor layer. Thus, a plurality of thin film field effect transistors respectively having different gate threshold voltages can be formed on a single substrate simply by forming the doped intermediate semiconductor layers for the thin film field effect transistors with different thicknesses.

公开(公告)号：US4436761A

公开(公告)日：1984-03-13

申请号：US401813

申请日：1982-07-26

申请人： Yutaka Hayashi ,  Mitsuyuki Yamanaka ,  Hideyuki Karasawa

发明人： Yutaka Hayashi ,  Mitsuyuki Yamanaka ,  Hideyuki Karasawa

IPC分类号： H01L31/0248 ,  C23C16/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/302 ,  H01L31/0224 ,  H01L31/04 ,  H01L31/20 ,  B05D3/06

CPC分类号： H01L21/0262 ,  C23C16/0245 ,  H01L21/02425 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02661 ,  H01L31/0224 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： In the deposition of a hydrogen-containing semiconductor film on a metal substrate, the electric contact characteristic between the metal substrate and the semiconductor film is improved by preparatorily exposing to hydrogen plasma the surface of the metal substrate on which the semiconductor film is to be deposited.

摘要翻译： 在金属基板上沉积含氢半导体膜时，金属基板与半导体膜之间的电接触特性通过在其上沉积半导体膜的金属基板的表面准备暴露于氢等离子体而得到改善 。

公开(公告)号：US5232868A

公开(公告)日：1993-08-03

申请号：US742101

申请日：1991-08-05

申请人： Yutaka Hayashi ,  Mitsuyuki Yamanaka

发明人： Yutaka Hayashi ,  Mitsuyuki Yamanaka

IPC分类号： H01L21/205 ,  H01L31/20

CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S148/051 ,  Y10S148/109

摘要： A method for forming a thin semiconductor film comprises the steps of supplying on a surface of a heated substrate a first material gas composed of germanium halide or germanium hydro-fluoride obtained by partially substituting fluorine of the germanium fluoride together with a second material gas composed of silicon hydride or silicon fluoro-hydride obtained by partially substituting hydrogen of the silicon hydride with fluorine and causing a chemical reaction between the first and second material gases, thereby growing a thin film containing germanium over the surface of the substrate. By controlling the substrate temperature or flow rate ratio of the first material gas to the second material gas, an optical gap of the thin film grown can be controlled.

摘要翻译： 一种形成薄半导体膜的方法包括以下步骤：在被加热衬底的表面上提供由锗卤化物或氟化锗制成的第一材料气体，所述第一材料气体通过部分地将氟化锗氟化物与由 氢化硅或氟化氢氢化物，其通过用氟部分地氢化硅氢化物并且引起第一和第二材料气体之间的化学反应而获得，从而在衬底的表面上生长含有锗的薄膜。 通过控制第一原料气体与第二原料气体的基板温度或流速比，可以控制生长的薄膜的光学间隙。

公开(公告)号：US5214002A

公开(公告)日：1993-05-25

申请号：US800711

申请日：1991-12-03

申请人： Yutaka Hayashi ,  Mitsuyuki Yamanaka

发明人： Yutaka Hayashi ,  Mitsuyuki Yamanaka

IPC分类号： H01L21/205 ,  H01L21/324 ,  H01L31/20

CPC分类号： H01L21/02381 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/324 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A process for depositing a thin semiconductor film includes the steps of depositing a thin film on a substrate by feeding onto the surface of the substrate being heated a gaseous starting material containing a constituent element of the thin film, and feeding excited hydrogen to the thin film without exposing the thin film to the ambient air. Disilane was fed together with hydrogen carrier gas onto a quartz substrate to deposit thereon a thin amorphous silicon film, to which excited hydrogen from a hydrogen plasma was then fed to modify the deposited thin silicon film. As a result, the photoconductivity of the thin silicon film was improved.

摘要翻译： 一种用于沉积薄半导体膜的工艺包括以下步骤：通过将被加热的衬底的表面馈送到含有薄膜的构成元素的气态原料并将激发的氢供给至薄膜而在衬底上沉积薄膜 而不会将薄膜暴露在环境空气中。 将二甲硅烷与氢气载气一起送入石英衬底上沉积薄的非晶硅膜，然后将来自氢等离子体的激发的氢气进料到薄的非晶硅膜上，以改性沉积的薄硅膜。 结果，提高了薄硅膜的光电导率。

公开(公告)号：US4694116A

公开(公告)日：1987-09-15

申请号：US842210

申请日：1986-03-21

申请人： Yutaka Hayashi ,  Toshio Mishuku ,  Mitsuyuki Yamanaka ,  Hideyo Iida

发明人： Yutaka Hayashi ,  Toshio Mishuku ,  Mitsuyuki Yamanaka ,  Hideyo Iida

IPC分类号： H01L31/04 ,  H01L31/052 ,  H01L31/18 ,  H01L31/06

CPC分类号： H01L31/1884 ,  H01L31/056 ,  Y02E10/52

摘要： A thin-film solar cell has a two-layered transparent electrode formed on a transparent substrate, a photoelectric conversion section formed on the transparent electrode, and a back electrode formed on the photoelectric conversion section. The first layer of the transparent electrode is formed on the transparent substrate and is constituted of crystal grains having a large average diameter, while the second layer thereof is formed on the first layer and is constituted of crystal grains having a small average grain diameter. The sharp pointed tips of the coarse crystal grains of the first layer are covered by the fine crystal grains of the second layer so that the side of the transparent electrode in contact with the photoelectric conversion section presents a relatively smooth surface with rounded irregularities. Each layer is separately deposited on the respective transparent substrate.

摘要翻译： 薄膜太阳能电池具有在透明基板上形成的双层透明电极，形成在透明电极上的光电转换部分和形成在光电转换部分上的背面电极。 透明电极的第一层形成在透明基板上，由平均直径大的晶粒构成，第二层形成在第一层上，由平均粒径小的晶粒构成。 第一层的粗晶粒的锐尖尖端被第二层的细晶粒覆盖，使得与光电转换部分接触的透明电极的侧面呈现具有圆形不规则性的相对平滑的表面。 各层分别沉积在相应的透明基板上。