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    Semiconductor device and method for fabricating the same
    2.
    发明授权
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07187014B2

    公开(公告)日：2007-03-06

    申请号：US10862452

    申请日：2004-06-08

    申请人： Yutaka Hirose ,  Daisuke Ueda ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto ,  Tomohiro Murata

    发明人： Yutaka Hirose ,  Daisuke Ueda ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto ,  Tomohiro Murata

    IPC分类号： H01L29/772

    CPC分类号： H01L29/7787 ,  H01L29/2003

    摘要： A semiconductor device has a sapphire substrate, a semiconductor layer made of GaN provided on the sapphire substrate, a multilayer film provided on the semiconductor layer, and an electrode in ohmic contact with the multilayer film. The multilayer film has been formed by alternately stacking two types of semiconductor layers having different amounts of piezopolarization or different amounts of spontaneous polarization and each containing an n-type impurity so that electrons are induced at the interface between the two types of semiconductor layers. This allows the contact resistance between the electrode and the multilayer film and a parasitic resistance in a current transmission path to be reduced to values lower than in a conventional semiconductor device.

    摘要翻译： 半导体器件具有蓝宝石衬底，设置在蓝宝石衬底上的由GaN制成的半导体层，设置在半导体层上的多层膜和与该多层膜欧姆接触的电极。 已经通过交替地堆叠具有不同量的极化或不同量的自发极化的两种类型的半导体层，并且每个含有n型杂质，以便在两种类型的半导体层之间的界面处诱导电子而形成多层膜。 这允许电极和多层膜之间的接触电阻和电流传输路径中的寄生电阻降低到比常规半导体器件中的值更低的值。

    Semiconductor device and method for fabricating the same
    4.
    发明申请
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20050082568A1

    公开(公告)日：2005-04-21

    申请号：US10862452

    申请日：2004-06-08

    申请人： Yutaka Hirose ,  Daisuke Ueda ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto ,  Tomohiro Murata

    发明人： Yutaka Hirose ,  Daisuke Ueda ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto ,  Tomohiro Murata

    IPC分类号： H01L21/28 ,  H01L21/338 ,  H01L29/20 ,  H01L29/417 ,  H01L29/778 ,  H01L29/812 ,  H01L31/0328

    CPC分类号： H01L29/7787 ,  H01L29/2003

    摘要： A semiconductor device has a sapphire substrate, a semiconductor layer made of GaN provided on the sapphire substrate, a multilayer film provided on the semiconductor layer, and an electrode in ohmic contact with the multilayer film. The multilayer film has been formed by alternately stacking two types of semiconductor layers having different amounts of piezopolarization or different amounts of spontaneous polarization and each containing an n-type impurity so that electrons are induced at the interface between the two types of semiconductor layers. This allows the contact resistance between the electrode and the multilayer film and a parasitic resistance in a current transmission path to be reduced to values lower than in a conventional semiconductor device.

    摘要翻译： 半导体器件具有蓝宝石衬底，设置在蓝宝石衬底上的由GaN制成的半导体层，设置在半导体层上的多层膜和与该多层膜欧姆接触的电极。 已经通过交替地堆叠具有不同量的极化或不同量的自发极化的两种类型的半导体层，并且每个含有n型杂质，以便在两种类型的半导体层之间的界面处诱导电子而形成多层膜。 这允许电极和多层膜之间的接触电阻和电流传输路径中的寄生电阻降低到比常规半导体器件中的值更低的值。

    Semiconductor device
    7.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07217960B2

    公开(公告)日：2007-05-15

    申请号：US11325340

    申请日：2006-01-05

    申请人： Hiroaki Ueno ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Daisuke Ueda ,  Tsuyoshi Tanaka ,  Manabu Yanagihara ,  Yutaka Hirose ,  Masahiro Hikita

    发明人： Hiroaki Ueno ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Daisuke Ueda ,  Tsuyoshi Tanaka ,  Manabu Yanagihara ,  Yutaka Hirose ,  Masahiro Hikita

    IPC分类号： H01L33/00

    CPC分类号： H01L29/7786 ,  H01L29/2003

    摘要： It is an object of the present invention to provide a semiconductor device, which can simultaneously achieve a normally-off mode of HFET and an improvement in Imax, and further achieve an improvement in gm and a reduction in gate leakage current. In order to keep a thin barrier layer 13 on an operation layer 12 of a substrate 11 directly under a gate electrode for mostly contributing to achieve the normally-off mode and also implement the high Imax, it is configured in such a way that a thickness of the barrier layer 13 can be increased by the semiconductor layer 17 between gate and source regions and between gate and drain regions. It is therefore possible to achieve the normally-off mode and an improvement in Imax as compared with an FET in which a thickness of the barrier layer is designed so as to be uniform. An insulating film 18 with a dielectric constant higher than that of the barrier layer is further inserted between a gate electrode 16 and the barrier layers 13, so that an improvement in gm and a reduction in gate leakage current can be achieved.

    摘要翻译： 本发明的一个目的是提供一种半导体器件，其可以同时实现HFET的常闭模式和改进的最大值，并进一步实现gm的改善 和栅极漏电流的减小。 为了在栅电极正下方的基板11的操作层12上保持薄势垒层13，主要用于实现常关模式并且还实现高I max， 配置成使得栅极和源极区域之间以及栅极和漏极区域之间的半导体层17可以增加阻挡层13的厚度。 因此与阻挡层的厚度被设计为均匀的FET相比，可以实现常关模式和I 的改善。 介电常数高于阻挡层的绝缘膜18进一步插入在栅电极16和阻挡层13之间，从而改善gm和栅极漏电流的减小 可以实现。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07528423B2

    公开(公告)日：2009-05-05

    申请号：US11681408

    申请日：2007-03-02

    申请人： Hiroaki Ueno ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Daisuke Ueda ,  Tsuyoshi Tanaka ,  Manabu Yanagihara ,  Yutaka Hirose ,  Masahiro Hikita

    发明人： Hiroaki Ueno ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Daisuke Ueda ,  Tsuyoshi Tanaka ,  Manabu Yanagihara ,  Yutaka Hirose ,  Masahiro Hikita

    IPC分类号： H01L31/072 ,  H01L31/109

    CPC分类号： H01L29/7786 ,  H01L29/2003

    摘要： It is an object of the present invention to provide a semiconductor device, which can simultaneously achieve a normally-off mode of HFET and an improvement in Imax, and further achieve an improvement in gm and a reduction in gate leakage current. In order to keep a thin barrier layer 13 on an operation layer 12 of a substrate 11 directly under a gate electrode for mostly contributing to achieve the normally-off mode and also implement the high Imax, it is configured in such a way that a thickness of the barrier layer 13 can be increased by the semiconductor layer 17 between gate and source regions and between gate and drain regions. It is therefore possible to achieve the normally-off mode and an improvement in Imax as compared with an FET in which a thickness of the barrier layer is designed so as to be uniform. An insulating film 18 with a dielectric constant higher than that of the barrier layer is further inserted between a gate electrode 16 and the barrier layers 13, so that an improvement in gm and a reduction in gate leakage current can be achieved.

    摘要翻译： 本发明的一个目的是提供一种可以同时实现HFET的常闭模式和改进Imax的半导体器件，并进一步实现gm的改善和栅极漏电流的减小。 为了在栅电极正下方的基板11的操作层12上保持薄的阻挡层13，主要用于实现常关模式并且还实现了高的Imax，它被配置成使得厚度 可以通过栅极和源极区域之间以及栅极和漏极区域之间的半导体层17来增加阻挡层13。 因此，与设置阻挡层的厚度均匀的FET相比，可以实现常闭模式和Imax的改善。 介电常数高于阻挡层的绝缘膜18进一步插入在栅电极16和阻挡层13之间，从而可以实现gm的改善和栅极漏电流的减小。

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20070210332A1

    公开(公告)日：2007-09-13

    申请号：US11681408

    申请日：2007-03-02

    申请人： Hiroaki UENO ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Daisuke Ueda ,  Tsuyoshi Tanaka ,  Manabu Yanagihara ,  Yutaka Hirose ,  Masahiro Hikita

    发明人： Hiroaki UENO ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Daisuke Ueda ,  Tsuyoshi Tanaka ,  Manabu Yanagihara ,  Yutaka Hirose ,  Masahiro Hikita

    IPC分类号： H01L31/00

    CPC分类号： H01L29/7786 ,  H01L29/2003

    摘要： It is an object of the present invention to provide a semiconductor device, which can simultaneously achieve a normally-off mode of HFET and an improvement in Imax, and further achieve an improvement in gm and a reduction in gate leakage current. In order to keep a thin barrier layer 13 on an operation layer 12 of a substrate 11 directly under a gate electrode for mostly contributing to achieve the normally-off mode and also implement the high Imax, it is configured in such a way that a thickness of the barrier layer 13 can be increased by the semiconductor layer 17 between gate and source regions and between gate and drain regions. It is therefore possible to achieve the normally-off mode and an improvement in Imax as compared with an FET in which a thickness of the barrier layer is designed so as to be uniform. An insulating film 18 with a dielectric constant higher than that of the barrier layer is further inserted between a gate electrode 16 and the barrier layers 13, so that an improvement in gm and a reduction in gate leakage current can be achieved.

    摘要翻译： 本发明的一个目的是提供一种半导体器件，其可以同时实现HFET的常闭模式和改进的最大值，并进一步实现gm的改善 和栅极漏电流的减小。 为了在栅电极正下方的基板11的操作层12上保持薄势垒层13，主要用于实现常关模式并且还实现高I max， 配置成使得栅极和源极区域之间以及栅极和漏极区域之间的半导体层17可以增加阻挡层13的厚度。 因此与阻挡层的厚度被设计为均匀的FET相比，可以实现常关模式和I 的改善。 介电常数高于阻挡层的绝缘膜18进一步插入在栅电极16和阻挡层13之间，从而改善gm和栅极漏电流的减小 可以实现。

    Semiconductor device
    10.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US20060157729A1

    公开(公告)日：2006-07-20

    申请号：US11325340

    申请日：2006-01-05

    申请人： Hiroaki Ueno ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Daisuke Ueda ,  Tsuyoshi Tanaka ,  Manabu Yanagihara ,  Yutaka Hirose ,  Masahiro Hikita

    发明人： Hiroaki Ueno ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Daisuke Ueda ,  Tsuyoshi Tanaka ,  Manabu Yanagihara ,  Yutaka Hirose ,  Masahiro Hikita

    IPC分类号： H01L33/00

    CPC分类号： H01L29/7786 ,  H01L29/2003

    摘要： It is an object of the present invention to provide a semiconductor device, which can simultaneously achieve a normally-off mode of HFET and an improvement in Imax, and further achieve an improvement in gm and a reduction in gate leakage current. In order to keep a thin barrier layer 13 on an operation layer 12 of a substrate 11 directly under a gate electrode for mostly contributing to achieve the normally-off mode and also implement the high Imax, it is configured in such a way that a thickness of the barrier layer 13 can be increased by the semiconductor layer 17 between gate and source regions and between gate and drain regions. It is therefore possible to achieve the normally-off mode and an improvement in Imax as compared with an FET in which a thickness of the barrier layer is designed so as to be uniform. An insulating film 18 with a dielectric constant higher than that of the barrier layer is further inserted between a gate electrode 16 and the barrier layers 13, so that an improvement in gm and a reduction in gate leakage current can be achieved.

    摘要翻译： 本发明的一个目的是提供一种半导体器件，其可以同时实现HFET的常闭模式和改进的最大值，并进一步实现gm的改善 和栅极漏电流的减小。 为了在栅电极正下方的基板11的操作层12上保持薄势垒层13，主要用于实现常关模式并且还实现高I max， 配置成使得栅极和源极区域之间以及栅极和漏极区域之间的半导体层17可以增加阻挡层13的厚度。 因此与阻挡层的厚度被设计为均匀的FET相比，可以实现常关模式和I 的改善。 介电常数高于阻挡层的绝缘膜18进一步插入在栅电极16和阻挡层13之间，从而改善gm和栅泄漏电流的降低 可以实现。