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132 条记录 (耗时 0.045 秒)

    Method of producing a semiconductor laser
    1.
    发明授权
    Method of producing a semiconductor laser 失效
    半导体激光器的制造方法

    公开(公告)号：US4829023A

    公开(公告)日：1989-05-09

    申请号：US126501

    申请日：1987-11-30

    申请人： Yutaka Nagai ,  Yutaka Mihashi ,  Tetsuya Yagi ,  Yoichiro Ota

    发明人： Yutaka Nagai ,  Yutaka Mihashi ,  Tetsuya Yagi ,  Yoichiro Ota

    IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S5/323

    CPC分类号： H01S5/32308 ,  H01S5/2232 ,  H01S5/2237 ,  Y10S148/017 ,  Y10S148/056 ,  Y10S148/095 ,  Y10S148/118

    摘要： A method for producing a semiconductor laser including successively growing at least two semiconductor layers simultaneously on a substrate, the finally grown layer not containing aluminum and the layer grown immediately before the finally grown layer containing aluminum, etching a stripe groove through the finally grown layer to expose part of the semiconductor layer containing aluminum, growing a second semiconductor layer not including aluminum on the finally grown layer and the exposed surface of the semiconductor layer containing aluminum, and growing a semiconductor layer including aluminum on the second semiconductor layer not containing aluminum.

    摘要翻译： 一种半导体激光器的制造方法，包括在基板上同时连续生长至少两个半导体层，最终生长层不含铝和在含有铝的最终生长层之前生长的层，在最终生长层上蚀刻条纹槽 露出包含铝的半导体层的一部分，在最终生长层上生长不包括铝的第二半导体层和含有铝的半导体层的暴露表面，并且在不含铝的第二半导体层上生长包括铝的半导体层。

    Semiconductor laser device
    3.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US4841535A

    公开(公告)日：1989-06-20

    申请号：US231003

    申请日：1988-08-11

    申请人： Yutaka Mihashi ,  Yutaka Nagai ,  Kenji Ikeda

    发明人： Yutaka Mihashi ,  Yutaka Nagai ,  Kenji Ikeda

    IPC分类号： H01S5/00 ,  H01S5/223

    CPC分类号： H01S5/2232 ,  H01S5/2237

    摘要： A semiconductor laser device includes semiconductor layers including a semiconductor layer having a stripe groove having a reverse trapezoidal cross section and a bent active layer spaced from and in the configuration of the groove wherein the bottom width of the groove is less than 2 microns and the distance from the active layer to the bottom of the groove is more than 0.6 micron.

    摘要翻译： 半导体激光器件包括半导体层，其包括半导体层，该半导体层具有带有反向梯形截面的条纹沟槽和与凹槽的形状间隔开的凹槽的弯曲有源层，其中凹槽的底部宽度小于2微米， 从活性层到凹槽的底部大于0.6微米。

    Semiconductor laser array with independently usable laser light emission regions formed in a single active layer
    4.
    发明授权
    Semiconductor laser array with independently usable laser light emission regions formed in a single active layer 失效
    半导体激光器阵列，其具有形成在单个有源层中的可独立使用的激光发射区域

    公开(公告)号：US4833510A

    公开(公告)日：1989-05-23

    申请号：US97736

    申请日：1987-09-17

    申请人： Yutaka Nagai ,  Yutaka Mihashi ,  Kenji Ikeda

    发明人： Yutaka Nagai ,  Yutaka Mihashi ,  Kenji Ikeda

    IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/40

    CPC分类号： H01S5/4031 ,  H01S5/4037

    摘要： A semiconductor laser array includes a pair of regions of an active layer for emitting laser lights being provided so as to produce a predetermined angle therebetween; the respective regions of the active layer being provided so as to have TE wave electric field vectors of different directions from each other in a plane vertical to the emitting direction of the output laser light. As such, laser light emitted from each of the active layer regions can be used independently without interference from the other.

    摘要翻译： 半导体激光器阵列包括用于发射激光的有源层的一对区域，以便在其间产生预定的角度; 有源层的各个区域被设置成在与输出激光的发射方向垂直的平面中彼此具有不同方向的TE波电场矢量。 因此，可以独立地使用从每个有源层区域发射的激光，而不受另一个的干扰。

    Semiconductor laser element suitable for production by a MO-CVD method
    5.
    发明授权
    Semiconductor laser element suitable for production by a MO-CVD method 失效
    半导体激光元件适用于通过MO-CVD法制造

    公开(公告)号：US4667332A

    公开(公告)日：1987-05-19

    申请号：US700017

    申请日：1985-02-08

    申请人： Yutaka Mihashi ,  Yutaka Nagai

    发明人： Yutaka Mihashi ,  Yutaka Nagai

    IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S3/19

    CPC分类号： H01S5/2232 ,  H01S5/2237

    摘要： A semiconductor laser element includes a first cladding layer of first conductivity type provided on a semiconductor substrate of the first conductivity type; a current blocking layer of a second conductivity type provided on the first cladding layer having a stripe groove from which the first cladding layer and is exposed at the bottom thereof; a light guide layer of the first conductivity type provided covering the current blocking layer, the stripe groove, and the first cladding layer exposed from the groove; an active layer provided on the light guide layer curved in the neighborhood of the stripe groove, whose refractive index is larger than that of the light guide layer; and a second cladding layer of the second conductivity type provided on the active layer, whose refractive index is smaller than that of the active layer.

    摘要翻译： 半导体激光元件包括设置在第一导电类型的半导体衬底上的第一导电类型的第一包层; 第二导电类型的电流阻挡层设置在第一包层上，具有条纹槽，第一包覆层从底部露出; 所述第一导电类型的导光层覆盖所述电流阻挡层，所述条纹槽和从所述槽露出的所述第一包层; 设置在所述导光层上的有源层，所述有源层在所述条纹槽附近弯曲，折射率大于所述导光层的折射率; 以及设置在有源层上的第二导电类型的第二包覆层，其折射率小于有源层的折射率。

    Semiconductor laser element suitable for production by a MO-CVD method
    7.
    发明授权
    Semiconductor laser element suitable for production by a MO-CVD method 失效
    半导体激光元件适用于通过MO-CVD法制造

    公开(公告)号：US4734385A

    公开(公告)日：1988-03-29

    申请号：US29190

    申请日：1987-03-23

    申请人： Yutaka Mihashi ,  Yutaka Nagai

    发明人： Yutaka Mihashi ,  Yutaka Nagai

    IPC分类号： H01S5/00 ,  H01S5/223 ,  H01L21/208 ,  H01S3/19

    CPC分类号： H01S5/2232 ,  H01S5/2237

    摘要： A semiconductor laser element includes a first cladding layer of first conductivity type provided on a semiconductor substrate of the first conductivity type; a current blocking layer of a second conductivity type provided on the first cladding layer having a stripe groove from which the first cladding layer and is exposed at the bottom thereof; a light guide layer of the first conductivity type provided covering the current blocking layer, the stripe groove, and the first cladding layer exposed from the groove; an active layer provided on the light guide layer curved in the neighborhood of the stripe groove, whose refractive index is larger than that of the light guide layer; and a second cladding layer of the second conductivity type provided on the active layer, whose refractive index is smaller than that of the active layer.

    Semiconductor laser device having integral optical output modulator
    8.
    发明授权
    Semiconductor laser device having integral optical output modulator 失效
    具有集成光输出调制器的半导体激光器件

    公开(公告)号：US4733399A

    公开(公告)日：1988-03-22

    申请号：US856937

    申请日：1986-04-25

    申请人： Yutaka Mihashi ,  Yutaka Nagai

    发明人： Yutaka Mihashi ,  Yutaka Nagai

    IPC分类号： H01S5/00 ,  H01S5/026 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/22 ,  H01S3/19

    CPC分类号： H01S5/06203 ,  H01S5/0425 ,  H01S5/2202

    摘要： A semiconductor laser device comprises a semiconductor laser portion (17) including a double hetero structure and a vertical MIS-FET portion (18) form on, and in series with, the semiconductor laser portion (17). The vertical MIS-FET portion (18) includes an n-type GaAs layer (6), a p-type GaAs layer (7), an n-type GaAs layer (8), and a striped groove (31) having V-shaped cross-section formed from the top surface of the n-type GaAs layer (8) to the n-type GaAs layer (6). A metal gate electrode (11) is further provided on the top surface of the striped groove (31), on an insulating film (10). A current (41)flowing through the vertical MIS-FET portion (18) is changed according to a photo modulating signal applied to the metal gate electrode (11) and, a current (40) is also changed according to the current (41). Accordingly, a laser oscillation output of the semiconductor laser portion (17) is also changed to accomplish the optical output modulation of the semiconductor laser.

    摘要翻译： 一种半导体激光器件包括：半导体激光器部分（17），包括双异质结构和与半导体激光器部分（17）形成并串联的垂直MIS-FET部分（18）。 垂直MIS-FET部分（18）包括n型GaAs层（6），p型GaAs层（7），n型GaAs层（8）和具有V型GaAs层的条纹槽（31） 形成由n型GaAs层（8）的顶面到n型GaAs层（6）的截面。 在绝缘膜（10）上，在条纹槽（31）的上表面上还设有金属栅电极（11）。 流过垂直MIS-FET部分（18）的电流（41）根据施加到金属栅极（11）的光调制信号而改变，并且电流（40）也根据电流（41）而改变， 。 因此，半导体激光器部分（17）的激光振荡输出也被改变以实现半导体激光器的光输出调制。