Extended wavelength strained layer lasers having strain compensated layers

    公开(公告)号:US06546031B1

    公开(公告)日:2003-04-08

    申请号:US09602776

    申请日:2000-06-23

    IPC分类号: H01S500

    摘要: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 &mgr;m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100° C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.

    Extended wavelength strained layer lasers having nitrogen disposed therein
    3.
    发明授权
    Extended wavelength strained layer lasers having nitrogen disposed therein 失效
    具有氮的扩展波长应变层激光器设置在其中

    公开(公告)号:US06920165B2

    公开(公告)日:2005-07-19

    申请号:US10373566

    申请日:2003-02-26

    摘要: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 μm or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100° C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.

    摘要翻译: 以新颖的方式使用几种方法,用新的识别和可行的参数来降低伪晶InGaAs / GaAs异质结构的峰跃迁能。 单独或组合使用的这些技术足以允许在发光电光器件的1.3μm或更大的波长处操作发光器件。 这些方法或技术例如包括:(1)利用在有源区域中具有高In浓度的新超晶格结构,(2)利用应变补偿增加适当高浓度的量子阱的可用层厚度,(3) 在伪晶InGaAsN / GaAs激光器结构中适当地使用少量的氮(N),以及(4)使用标称(111)取向的衬底,以增加适当高的In浓度的量子阱的可用层厚度。 在所有上述技术中,增益偏移可以用于VCSEL中,以通过适当的DBR间隔将低于峰值跃迁能量的发射能量去除约25meV或甚至更多。 在某些形式的平面内激光器中也可以使用增益偏移。 也可以使用增加的温度来将峰值转变能量(因此发射能量)降低约50meV / 100℃。所有这些技术还可应用于其它材料系统,例如,扩展生长在激光二极管上的激光二极管的发射波长 InP衬底。 另外,讨论了利用上述技术的结构。

    Extended wavelength strained layer lasers having short period
superlattices
    4.
    发明授权
    Extended wavelength strained layer lasers having short period superlattices 失效
    具有短周期超晶格的扩展波长应变层激光器

    公开(公告)号:US5719895A

    公开(公告)日:1998-02-17

    申请号:US721769

    申请日:1996-09-25

    摘要: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 .mu.m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) sue of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100.degree. C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.

    摘要翻译: 以新颖的方式使用几种方法,用新的识别和可行的参数来降低伪晶InGaAs / GaAs异质结构的峰跃迁能。 单独或组合使用的这些技术足以允许在发光电光器件的1.3μm或更大的波长处操作发光器件。 这些方法或技术例如包括:(1)利用在有源区域中具有高In浓度的新超晶格结构,(2)利用应变补偿增加适当高浓度的量子阱的可用层厚度,(3) 在伪晶InGaAsN / GaAs激光器结构中适当地使用少量的氮(N),(4)采用标称(111)取向的衬底,以增加适当高的In浓度的量子阱的可用层厚度。 在所有上述技术中,增益偏移可以用于VCSEL中,以通过适当的DBR间隔将低于峰值跃迁能量的发射能量去除约25meV或甚至更多。 在某些形式的平面内激光器中也可以使用增益偏移。 也可以使用增加的温度来将峰值转变能量(因此发射能量)降低约50meV / 100℃。所有这些技术还可应用于其他材料系统,例如,扩展生长在激光二极管上的激光二极管的发射波长 InP衬底。 另外,讨论了利用上述技术的结构。

    Extended wavelength strained layer lasers having nitrogen disposed
therein
    5.
    发明授权
    Extended wavelength strained layer lasers having nitrogen disposed therein 失效
    具有氮的扩展波长应变层激光器设置在其中

    公开(公告)号:US5719894A

    公开(公告)日:1998-02-17

    申请号:US721590

    申请日:1996-09-25

    摘要: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 .mu.m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) sue of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100.degree. C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.

    摘要翻译: 以新颖的方式使用几种方法,用新的识别和可行的参数来降低伪晶InGaAs / GaAs异质结构的峰跃迁能。 单独或组合使用的这些技术足以允许在发光电光器件的1.3μm或更大的波长处操作发光器件。 这些方法或技术例如包括:(1)利用在有源区域中具有高In浓度的新超晶格结构,(2)利用应变补偿增加适当高浓度的量子阱的可用层厚度,(3) 在伪晶InGaAsN / GaAs激光器结构中适当地使用少量的氮(N),(4)采用标称(111)取向的衬底,以增加适当高的In浓度的量子阱的可用层厚度。 在所有上述技术中,增益偏移可以用于VCSEL中,以通过适当的DBR间隔将低于峰值跃迁能量的发射能量去除约25meV或甚至更多。 在某些形式的平面内激光器中也可以使用增益偏移。 也可以使用增加的温度来将峰值转变能量(因此发射能量)降低约50meV / 100℃。所有这些技术还可应用于其他材料系统,例如,扩展生长在激光二极管上的激光二极管的发射波长 InP衬底。 另外,讨论了利用上述技术的结构。

    Extended wavelength strained layer lasers having nitrogen disposed therein
    6.
    发明申请
    Extended wavelength strained layer lasers having nitrogen disposed therein 失效
    具有氮的扩展波长应变层激光器设置在其中

    公开(公告)号:US20040017835A1

    公开(公告)日:2004-01-29

    申请号:US10373566

    申请日:2003-02-26

    IPC分类号: H01S005/00 H01S003/08

    摘要: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 nullm or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4): sue of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100null C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.

    摘要翻译: 以新颖的方式使用几种方法,用新的识别和可行的参数来降低伪晶InGaAs / GaAs异质结构的峰跃迁能。 单独或组合使用的这些技术足以允许在发光电光器件的1.3μm或更大的波长处操作发光器件。 这些方法或技术例如包括:(1)利用在有源区域中具有高In浓度的新超晶格结构,(2)利用应变补偿增加适当高浓度的量子阱的可用层厚度,(3) 在伪晶InGaAsN / GaAs激光器结构中适当地使用少量的氮(N),以及(4):标称(111)取向的衬底的起始,以增加适当高的In浓度的量子阱的可用层厚度。 在所有上述技术中,增益偏移可以用于VCSEL中,以通过适当的DBR间隔将低于峰值跃迁能量的发射能量去除约25meV或甚至更多。 在某些形式的平面内激光器中也可以使用增益偏移。 也可以使用增加的温度来将峰值转变能量(因此发射能量)降低约50meV / 100℃。所有这些技术还可应用于其它材料系统,例如,扩展生长在激光二极管上的激光二极管的发射波长 InP衬底。 另外,讨论了利用上述技术的结构。

    Extended wavelength strained layer lasers having strain compensated
layers
    8.
    发明授权
    Extended wavelength strained layer lasers having strain compensated layers 失效
    具有应变补偿层的扩展波长应变层激光器

    公开(公告)号:US5960018A

    公开(公告)日:1999-09-28

    申请号:US115689

    申请日:1998-07-15

    摘要: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 .mu.m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) sue of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100.degree. C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.

    摘要翻译: 以新颖的方式使用几种方法,用新的识别和可行的参数来降低伪晶InGaAs / GaAs异质结构的峰跃迁能。 单独或组合使用的这些技术足以允许在发光电光器件的1.3μm或更大的波长处操作发光器件。 这些方法或技术例如包括:(1)利用在有源区域中具有高In浓度的新超晶格结构,(2)利用应变补偿增加适当高浓度的量子阱的可用层厚度,(3) 在伪晶InGaAsN / GaAs激光器结构中适当地使用少量的氮(N),(4)采用标称(111)取向的衬底,以增加适当高的In浓度的量子阱的可用层厚度。 在所有上述技术中,增益偏移可以用于VCSEL中,以通过适当的DBR间隔将低于峰值跃迁能量的发射能量去除约25meV或甚至更多。 在某些形式的平面内激光器中也可以使用增益偏移。 也可以使用增加的温度来将峰值转变能量(因此发射能量)降低约50meV / 100℃。所有这些技术还可应用于其他材料系统,例如,扩展生长在激光二极管上的激光二极管的发射波长 InP衬底。 另外,讨论了利用上述技术的结构。

    Extended wavelength strained layer lasers having nitrogen disposed therein
    9.
    发明授权
    Extended wavelength strained layer lasers having nitrogen disposed therein 有权
    具有氮的扩展波长应变层激光器设置在其中

    公开(公告)号:US07627014B2

    公开(公告)日:2009-12-01

    申请号:US11090260

    申请日:2005-03-28

    IPC分类号: H01S5/00

    摘要: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 μm or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100° C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.

    摘要翻译: 以新颖的方式使用几种方法,用新的识别和可行的参数来降低伪晶InGaAs / GaAs异质结构的峰跃迁能。 单独或组合使用的这些技术足以允许在发光电光器件的1.3μm或更大的波长处操作发光器件。 这些方法或技术例如包括:(1)利用在有源区域中具有高In浓度的新超晶格结构,(2)利用应变补偿增加适当高浓度的量子阱的可用层厚度,(3) 在伪晶InGaAsN / GaAs激光器结构中适当地使用少量的氮(N),以及(4)使用标称(111)取向的衬底,以增加适当高的In浓度的量子阱的可用层厚度。 在所有上述技术中,增益偏移可以用于VCSEL中,以通过适当的DBR间隔将低于峰值跃迁能量的发射能量去除约25meV或甚至更多。 在某些形式的平面内激光器中也可以使用增益偏移。 也可以使用增加的温度来将峰值转变能量(因此发射能量)降低约50meV / 100℃。所有这些技术还可应用于其它材料系统,例如,扩展生长在激光二极管上的激光二极管的发射波长 InP衬底。 另外,讨论了利用上述技术的结构。

    Extended wavelength strained layer lasers having strain compensated layers
    10.
    发明授权
    Extended wavelength strained layer lasers having strain compensated layers 失效
    具有应变补偿层的扩展波长应变层激光器

    公开(公告)号:US06359920B1

    公开(公告)日:2002-03-19

    申请号:US09320945

    申请日:1999-05-26

    IPC分类号: H01S5343

    摘要: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 &mgr;m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100° C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.

    摘要翻译: 以新颖的方式使用几种方法,用新的识别和可行的参数来降低伪晶InGaAs / GaAs异质结构的峰跃迁能。 单独或组合使用的这些技术足以允许在发光电光器件的1.3μm或更大的波长处操作发光器件。 这些方法或技术例如包括:(1)利用在有源区域中具有高In浓度的新超晶格结构,(2)利用应变补偿增加适当高浓度的量子阱的可用层厚度,(3) 在伪晶InGaAsN / GaAs激光器结构中适当地使用少量的氮(N),以及(4)使用标称(111)取向的衬底,以增加适当高的In浓度的量子阱的可用层厚度。 在所有上述技术中,增益偏移可以用于VCSEL中,以通过适当的DBR间隔将低于峰值跃迁能量的发射能量去除约25meV或甚至更多。 在某些形式的平面内激光器中也可以使用增益偏移。 也可以使用增加的温度来将峰值转变能量(因此发射能量)降低约50meV / 100℃。所有这些技术还可应用于其它材料系统,例如,扩展生长在激光二极管上的激光二极管的发射波长 InP衬底。 另外,讨论了利用上述技术的结构。