公开(公告)号：US07675122B2

公开(公告)日：2010-03-09

申请号：US11889704

申请日：2007-08-15

申请人： Yuuichi Hirano ,  Takashi Ipposhi ,  Shigeto Maegawa ,  Koji Nii

发明人： Yuuichi Hirano ,  Takashi Ipposhi ,  Shigeto Maegawa ,  Koji Nii

IPC分类号： H01L29/76 ,  H01L29/94

CPC分类号： H01L21/84 ,  H01L27/0207 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1203 ,  Y10S257/903 ,  Y10S257/904

摘要： A contact connected to a word line is formed on a gate electrode of an access transistor of an SRAM cell. The contact passes through an element isolation insulating film to reach an SOI layer. A body region of a driver transistor and that of the access transistor are electrically connected with each other through the SOI layer located under the element isolation insulating film. Therefore, the access transistor is in a DTMOS structure having the gate electrode connected with the body region through the contact, which in turn is also electrically connected to the body region of the driver transistor. Thus, operations can be stabilized while suppressing increase of an area for forming the SRAM cell.

摘要翻译： 连接到字线的触点形成在SRAM单元的存取晶体管的栅电极上。 接触通过元件隔离绝缘膜以达到SOI层。 驱动晶体管的体区和存取晶体管的体区通过位于元件隔离绝缘膜下方的SOI层彼此电连接。 因此，存取晶体管是具有通过触点与主体区域连接的栅电极的DTMOS结构，该触点又电连接到驱动晶体管的体区。 因此，可以在抑制用于形成SRAM单元的区域的增加的同时稳定操作。

公开(公告)号：US20080211035A1

公开(公告)日：2008-09-04

申请号：US11889704

申请日：2007-08-15

申请人： Yuuichi Hirano ,  Takashi Ipposhi ,  Shigeto Maegawa ,  Koji Nii

发明人： Yuuichi Hirano ,  Takashi Ipposhi ,  Shigeto Maegawa ,  Koji Nii

IPC分类号： H01L27/11

CPC分类号： H01L21/84 ,  H01L27/0207 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1203 ,  Y10S257/903 ,  Y10S257/904

摘要： A contact connected to a word line is formed on a gate electrode of an access transistor of an SRAM cell. The contact passes through an element isolation insulating film to reach an SOI layer. A body region of a driver transistor and that of the access transistor are electrically connected with each other through the SOI layer located under the element isolation insulating film. Therefore, the access transistor is in a DTMOS structure having the gate electrode connected with the body region through the contact, which in turn is also electrically connected to the body region of the driver transistor. Thus, operations can be stabilized while suppressing increase of an area for forming the SRAM cell.

摘要翻译： 连接到字线的触点形成在SRAM单元的存取晶体管的栅电极上。 接触通过元件隔离绝缘膜以达到SOI层。 驱动晶体管的体区和存取晶体管的体区通过位于元件隔离绝缘膜下方的SOI层彼此电连接。 因此，存取晶体管是具有通过触点与主体区域连接的栅电极的DTMOS结构，该触点又电连接到驱动晶体管的体区。 因此，可以在抑制用于形成SRAM单元的区域的增加的同时稳定操作。

公开(公告)号：US07382026B2

公开(公告)日：2008-06-03

申请号：US11889677

申请日：2007-08-15

申请人： Yuuichi Hirano ,  Takashi Ipposhi ,  Shigeto Maegawa ,  Koji Nii

发明人： Yuuichi Hirano ,  Takashi Ipposhi ,  Shigeto Maegawa ,  Koji Nii

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/00

CPC分类号： H01L21/84 ,  H01L27/0207 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1203 ,  Y10S257/903 ,  Y10S257/904

摘要： A contact connected to a word line is formed on a gate electrode of an access transistor of an SRAM cell. The contact passes through an element isolation insulating film to reach an SOI layer. A body region of a driver transistor and that of the access transistor are electrically connected with each other through the SOI layer located under the element isolation insulating film. Therefore, the access transistor is in a DTMOS structure having the gate electrode connected with the body region through the contact, which in turn is also electrically connected to the body region of the driver transistor. Thus, operations can be stabilized while suppressing increase of an area for forming the SRAM cell.

公开(公告)号：US20080001226A1

公开(公告)日：2008-01-03

申请号：US11889677

申请日：2007-08-15

申请人： Yuuichi Hirano ,  Takashi Ipposhi ,  Shigeto Maegawa ,  Koji Nii

发明人： Yuuichi Hirano ,  Takashi Ipposhi ,  Shigeto Maegawa ,  Koji Nii

IPC分类号： H01L27/12

CPC分类号： H01L21/84 ,  H01L27/0207 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1203 ,  Y10S257/903 ,  Y10S257/904

摘要： A contact connected to a word line is formed on a gate electrode of an access transistor of an SRAM cell. The contact passes through an element isolation insulating film to reach an SOI layer. A body region of a driver transistor and that of the access transistor are electrically connected with each other through the SOI layer located under the element isolation insulating film. Therefore, the access transistor is in a DTMOS structure having the gate electrode connected with the body region through the contact, which in turn is also electrically connected to the body region of the driver transistor. Thus, operations can be stabilized while suppressing increase of an area for forming the SRAM cell.

公开(公告)号：US07271454B2

公开(公告)日：2007-09-18

申请号：US10927638

申请日：2004-08-27

申请人： Yuuichi Hirano ,  Takashi Ipposhi ,  Shigeto Maegawa ,  Koji Nii

发明人： Yuuichi Hirano ,  Takashi Ipposhi ,  Shigeto Maegawa ,  Koji Nii

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/00

CPC分类号： H01L21/84 ,  H01L27/0207 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1203 ,  Y10S257/903 ,  Y10S257/904

摘要： A contact connected to a word line is formed on a gate electrode of an access transistor of an SRAM cell. The contact passes through an element isolation insulating film to reach an SOI layer. A body region of a driver transistor and that of the access transistor are electrically connected with each other through the SOI layer located under the element isolation insulating film. Therefore, the access transistor is in a DTMOS structure having the gate electrode connected with the body region through the contact, which in turn is also electrically connected to the body region of the driver transistor. Thus, operations can be stabilized while suppressing increase of an area for forming the SRAM cell.

摘要翻译： 连接到字线的触点形成在SRAM单元的存取晶体管的栅电极上。 接触通过元件隔离绝缘膜以达到SOI层。 驱动晶体管的体区和存取晶体管的体区通过位于元件隔离绝缘膜下方的SOI层彼此电连接。 因此，存取晶体管是具有通过触点与主体区域连接的栅电极的DTMOS结构，该触点又电连接到驱动晶体管的体区。 因此，可以在抑制用于形成SRAM单元的区域的增加的同时稳定操作。

公开(公告)号：US08441843B2

公开(公告)日：2013-05-14

申请号：US13317846

申请日：2011-10-31

申请人： Noriaki Maeda ,  Yoshihiro Shinozaki ,  Masanao Yamaoka ,  Yasuhisa Shimazaki ,  Masanori Isoda ,  Koji Nii

发明人： Noriaki Maeda ,  Yoshihiro Shinozaki ,  Masanao Yamaoka ,  Yasuhisa Shimazaki ,  Masanori Isoda ,  Koji Nii

IPC分类号： G11C11/00

CPC分类号： G11C11/412 ,  G11C5/063 ,  G11C5/14 ,  G11C11/419 ,  H01L27/11 ,  H01L27/1104

摘要： The invention provides a semiconductor integrated circuit device provided with an SRAM that satisfies the requirements for both the SNM and the write margin with a low supply voltage. The semiconductor integrated circuit device include: multiple static memory cells provided in correspondence with multiple word lines and multiple complimentary bit lines; multiple memory cell power supply lines that each supply an operational voltage to each of the multiple memory cells connected to the multiple complimentary bit lines each; multiple power supply circuits comprised of resistive units that each supply a power supply voltage to the memory cell power supply lines each; and a pre-charge circuit that supplies a pre-charge voltage corresponding to the power supply voltage to the complimentary bit lines, wherein the memory cell power supply lines are made to have coupling capacitances to thereby transmit a write signal on corresponding complimentary bit lines.

公开(公告)号：US08363456B2

公开(公告)日：2013-01-29

申请号：US12975400

申请日：2010-12-22

申请人： Koji Nii

发明人： Koji Nii

IPC分类号： G11C11/00

CPC分类号： G11C11/4125

摘要： To improve reliability of a semiconductor device having an SRAM.The semiconductor device has a memory cell including six n-channel type transistors and two p-channel type transistors formed over a silicon substrate. Over the silicon substrate, a first p well, a first n well, a second p well, a second n well, and a third p well are arranged in this order when viewed in a row direction. First and second positive-phase access transistors are disposed in the first p well, first and second driver transistors are disposed in the second p well, and first and second negative-phase access transistors are arranged in the third p well.

摘要翻译： 为了提高具有SRAM的半导体器件的可靠性。 半导体器件具有包括六个n沟道型晶体管和形成在硅衬底上的两个p沟道型晶体管的存储单元。 在硅衬底上，当沿行方向观察时，以该顺序布置第一p阱，第一n阱，第二p阱，第二n阱和第三p阱。 第一和第二正相存取晶体管设置在第一p阱中，第一和第二驱动晶体管设置在第二p阱中，第一和第二负相存取晶体管被布置在第三p阱中。

公开(公告)号：US08310883B2

公开(公告)日：2012-11-13

申请号：US13193258

申请日：2011-07-28

申请人： Makoto Yabuuchi ,  Koji Nii

发明人： Makoto Yabuuchi ,  Koji Nii

IPC分类号： G11C7/00

CPC分类号： G11C8/08 ,  G11C5/147 ,  G11C11/412 ,  G11C11/413

摘要： A driver power supply circuit stepping down a power supply voltage is arranged at a power supply node of a word line driver. The driver power supply circuit includes a non-silicide resistance element of N+ doped polycrystalline silicon, and a pull-down circuit lowering a voltage level of the driver power supply node. The pull-down circuit includes a pull-down transistor having the same threshold voltage characteristics as a memory cell transistor pulling down a voltage level of the driver power supply node, and a gate control circuit adjusting at least a gate voltage of the pull-down transistor. The gate control circuit corrects the gate potential of the pull-down transistor in a manner linked to variations in threshold voltage of the memory cell transistor.

摘要翻译： 降低电源电压的驱动器电源电路被布置在字线驱动器的电源节点处。 驱动器电源电路包括N +掺杂多晶硅的非硅化物电阻元件和降低驱动器电源节点的电压电平的下拉电路。 下拉电路包括具有与下拉驱动器电源节点的电压电平的存储单元晶体管相同的阈值电压特性的下拉晶体管，以及至少调节下拉电路的栅极电压的栅极控制电路 晶体管。 栅极控制电路以与存储单元晶体管的阈值电压的变化相关联的方式校正下拉晶体管的栅极电位。

公开(公告)号：US08072799B2

公开(公告)日：2011-12-06

申请号：US12662029

申请日：2010-03-29

申请人： Noriaki Maeda ,  Yoshihiro Shinozaki ,  Masanao Yamaoka ,  Yasuhisa Shimazaki ,  Masanori Isoda ,  Koji Nii

发明人： Noriaki Maeda ,  Yoshihiro Shinozaki ,  Masanao Yamaoka ,  Yasuhisa Shimazaki ,  Masanori Isoda ,  Koji Nii

IPC分类号： G11C11/00

CPC分类号： G11C11/412 ,  G11C5/063 ,  G11C5/14 ,  G11C11/419 ,  H01L27/11 ,  H01L27/1104

摘要： The invention provides a semiconductor integrated circuit device provided with an SRAM that satisfies the requirements for both the SNM and the write margin with a low supply voltage. The semiconductor integrated circuit device include: multiple static memory cells provided in correspondence with multiple word lines and multiple complimentary bit lines; multiple memory cell power supply lines that each supply an operational voltage to each of the multiple memory cells connected to the multiple complimentary bit lines each; multiple power supply circuits comprised of resistive units that each supply a power supply voltage to the memory cell power supply lines each; and a pre-charge circuit that supplies a pre-charge voltage corresponding to the power supply voltage to the complimentary bit lines, wherein the memory cell power supply lines are made to have coupling capacitances to thereby transmit a write signal on corresponding complimentary bit lines.

摘要翻译： 本发明提供了一种具有SRAM的半导体集成电路器件，其满足对具有低电源电压的SNM和写入裕度两者的要求。 半导体集成电路装置包括：与多个字线和多个互补位线对应地设置的多个静态存储单元; 多个存储单元电源线，其各自向连接到多个互补位线的多个存储器单元中的每一个提供工作电压; 多个电源电路由电阻单元构成，每个电阻单元各自向存储单元电源线提供电源电压; 以及预充电电路，其向互补位线提供与电源电压相对应的预充电电压，其中使存储单元电源线具有耦合电容，从而在相应的互补位线上传输写信号。

公开(公告)号：US07876625B2

公开(公告)日：2011-01-25

申请号：US12555447

申请日：2009-09-08

申请人： Makoto Yabuuchi ,  Koji Nii

发明人： Makoto Yabuuchi ,  Koji Nii

IPC分类号： G11C7/00

CPC分类号： G11C8/08 ,  G11C5/147 ,  G11C11/412 ,  G11C11/413

摘要： A driver power supply circuit stepping down a power supply voltage is arranged at a power supply node of a word line driver. The driver power supply circuit includes a non-silicide resistance element of N+ doped polycrystalline silicon, and a pull-down circuit lowering a voltage level of the driver power supply node. The pull-down circuit includes a pull-down transistor having the same threshold voltage characteristics as a memory cell transistor pulling down a voltage level of the driver power supply node, and a gate control circuit adjusting at least a gate voltage of the pull-down transistor. The gate control circuit corrects the gate potential of the pull-down transistor in a manner linked to variations in threshold voltage of the memory cell transistor.