公开(公告)号：US5970081A

公开(公告)日：1999-10-19

申请号：US932098

申请日：1997-09-17

申请人： Yuzo Hirayama ,  Masahisa Funemizu ,  Masaki Tohyama ,  Motoyasu Morinaga ,  Keiji Takaoka ,  Kazuhiro Inoue ,  Makoto Ohashi

发明人： Yuzo Hirayama ,  Masahisa Funemizu ,  Masaki Tohyama ,  Motoyasu Morinaga ,  Keiji Takaoka ,  Kazuhiro Inoue ,  Makoto Ohashi

IPC分类号： H01S5/026 ,  H01S5/12 ,  H01S5/187 ,  H01S3/08 ,  H01S3/085

CPC分类号： H01S5/187 ,  H01S2301/18 ,  H01S5/026 ,  H01S5/12 ,  H01S5/124

摘要： A grating coupled surface emitting laser has a diffraction grating of a second or higher order for guided-mode light part of a waveguide region, and extract a beam in a direction perpendicular to the waveguide region. By narrowing a stripe of the waveguide region around the center, the phase of the diffraction grating is shifted to attain a Gaussian distribution for radiation-mode light in a cross section along the waveguiding direction.

摘要翻译： 光栅耦合表面发射激光器具有用于波导区域的引导模式光部分的第二级或更高级的衍射光栅，并且在垂直于波导区域的方向上提取光束。 通过使围绕中心的波导区域变窄，沿着波导方向的横截面中的衍射光栅的相位偏移以达到辐射模式光的高斯分布。

公开(公告)号：US6108481A

公开(公告)日：2000-08-22

申请号：US16411

申请日：1998-01-30

申请人： Masaki Tohyama ,  Masahisa Funemizu ,  Yuzo Hirayama

发明人： Masaki Tohyama ,  Masahisa Funemizu ,  Yuzo Hirayama

IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/30 ,  G02B6/42

CPC分类号： G02B6/12004 ,  G02B6/1228 ,  G02B6/305 ,  G02B6/4207

摘要： In order to realize an optical semiconductor device having a window structure promising high-speed operation and highly efficient coupling with optical fibers and to realize its manufacturing method, the device has a window structure in which an optical guide layer is partly removed near the emission facet to decrease the facet reflectivity. Since a cladding layer has a narrow mesa structure also in a window region, the parasitic capacitance can be reduced, and high-speed modulation is ensured. Although light runs through the window region in spread directions from one end of the optical guide layer toward the emission facet, the cladding layer changes its width or thickness in accordance with the spread angle of light. Therefore, light is not reflected or scattered by side surfaces of the cladding layer, and prevents a decrease in optical output due to a scattering loss, or a deterioration in distribution of emitted light. As a result, the device has a high coupling efficiency with optical fibers, and is operative for high optical output.

摘要翻译： 为了实现具有有希望的高速操作的窗口结构和与光纤的高效耦合的窗口结构并实现其制造方法的光学半导体器件，该器件具有窗口结构，其中光导层在发射面附近被部分去除 以减小刻面反射率。 由于覆盖层在窗口区域中也具有窄的台面结构，所以可以减小寄生电容，并且确保高速调制。 虽然光沿着从导光层的一端朝向发射面的扩展方向穿过窗口区域，但是包层根据光的扩展角度改变其宽度或厚度。 因此，光不会被包层的侧面反射或散射，并且防止由于散射损失导致的光输出的降低或发射光的分布的劣化。 结果，该装置与光纤具有高耦合效率，并且可用于高光输出。

公开(公告)号：US5168077A

公开(公告)日：1992-12-01

申请号：US501781

申请日：1990-03-29

申请人： Yasuo Ashizawa ,  Takao Noda ,  Mitsuhiro Kushibe ,  Masahisa Funemizu ,  Kazuhiro Eguchi ,  Yasuo Ohba ,  Yoshihiro Kokubun

发明人： Yasuo Ashizawa ,  Takao Noda ,  Mitsuhiro Kushibe ,  Masahisa Funemizu ,  Kazuhiro Eguchi ,  Yasuo Ohba ,  Yoshihiro Kokubun

IPC分类号： C30B25/02 ,  H01L21/205

CPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S148/057 ,  Y10S148/11

摘要： A p-type GaAs or AlGaAs thin film is formed by a MOCVD method. In the growing step of the thin film, the thin film is doped with a high concentration of carbon atoms forming an acceptor level such that the carrier concentration of the thin film falls within the range of between 1.times.10.sup.18 cm.sup.-3 and 1.times.10.sup.20 cm.sup.-3. At least one of trimethyl gallium and trimethyl aluminum is used as a raw material gaseous compound of III-group element, and arsine is used as a raw material gaseous compound of V-group element. The thin film is formed by an epitaxial growth under the molar ratio V/III of the V-group element supply rate to the III-group element supply rate, which is set at such a small value as 0.3 to 2.5, the temperature of 450 to 700.degree. and the pressure of 1 to 400 Torr. The thin film formed under these conditions exhibits a mirror-like smooth surface, and the film-growth rate is dependent on the supply rate of the V-group element.