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    Negatively chargeable electrophotographic photoreceptor
    1.
    发明授权
    Negatively chargeable electrophotographic photoreceptor 失效
    可负电荷的电子照相感光体

    公开(公告)号：US5556729A

    公开(公告)日：1996-09-17

    申请号：US464466

    申请日：1995-06-05

    申请人： Yuzuru Fukuda ,  Tsuyoshi Ohta ,  Masato Ono ,  Taketoshi Higashi ,  Shigeru Yagi

    发明人： Yuzuru Fukuda ,  Tsuyoshi Ohta ,  Masato Ono ,  Taketoshi Higashi ,  Shigeru Yagi

    IPC分类号： G03G5/08 ,  G03G5/082 ,  G03G5/147

    CPC分类号： G03G5/08235 ,  G03G5/08278

    摘要： An electrophotographic photoreceptor comprising: an electrically conductive substrate, a charge injection blocking layer formed on said electrically conductive substrate, a photoconductive layer comprising a single layer formed on said charge injection blocking layer, said photoconductive layer comprising amorphous silicon containing boron, a positive hole capturing layer formed on said photoconductive layer, said positive hole capturing layer being selected from the group comprising amorphous silicon containing less than 50 ppm boron and amorphous silicon being substantially composed of hydrogen and silicon atoms, and a surface layer formed on said positive hole capturing layer. The boron concentration contained in said photoconductive layer is 0.01-1000 ppm. The surface layer is formed by amorphous silicon nitride, amorphous silicon oxide, amorphous silicon carbide or amorphous carbon as a main body. The charge injection blocking layer has amorphous silicon as a main body and contains a group V element. The electrophotographic photoreceptor is excellent in the dark attenuation, the sensitivity and electrification capacity and does not cause image flow or image fogging on copied images obtained by using the photoreceptor.

    摘要翻译： 一种电子照相感光体，其特征在于，具有：导电性基板，形成在所述导电性基板上的电荷注入阻挡层，含有形成于所述电荷注入阻挡层上的单层的光电导层，所述光电导层含有含硼的非晶硅， 所述空穴捕获层选自含有小于50ppm硼的非晶硅和基本上由氢和硅原子组成的非晶硅，以及形成在所述正空穴捕获层上的表面层。 所述光电导层中含有的硼浓度为0.01〜1000ppm。 表面层由非晶氮化硅，非晶氧化硅，非晶碳化硅或无定形碳作为主体形成。 电荷注入阻挡层以非晶硅为主体，含有V族元素。 电子照相感光体在黑暗衰减，灵敏度和带电能力方面优异，并且不会对通过使用感光体获得的复印图像上的图像流动或图像起雾。

    Electrostatic image-bearing dielectric member
    2.
    发明授权
    Electrostatic image-bearing dielectric member 失效
    静电影像承载电介质

    公开(公告)号：US5631087A

    公开(公告)日：1997-05-20

    申请号：US479566

    申请日：1995-06-07

    申请人： Yuzuru Fukuda ,  Shigeru Yagi ,  Tsuyoshi Ohta ,  Masato Ono

    发明人： Yuzuru Fukuda ,  Shigeru Yagi ,  Tsuyoshi Ohta ,  Masato Ono

    IPC分类号： G03G5/02 ,  G03G5/082 ,  B23B9/00

    CPC分类号： G03G5/0217 ,  G03G5/08285 ,  Y10T428/30

    摘要： An electrostatic image-bearing dielectric member comprises a support and a dielectric layer formed on the support. The dielectric layer is formed of at least one of amorphous carbon, diamond-like carbon and diamond. The dielectric layer may contain not larger than 60 atomic percent of at least one of hydrogen and fluorine. An intermediate layer may be provided between the support and the dielectric layer in order to improve the adhesion therebetween.

    摘要翻译： 静电图像承载电介质构件包括支撑体和形成在支撑体上的电介质层。 电介质层由无定形碳，类金刚石碳和金刚石中的至少一种形成。 电介质层可以含有不大于60原子％的氢和氟中的至少一种。 可以在支撑体和电介质层之间设置中间层，以改善它们之间的粘合性。

    Electrophotographic photoreceptor and electrophotographic process
    5.
    发明授权
    Electrophotographic photoreceptor and electrophotographic process 失效
    电子照相感光体和电子照相工艺

    公开(公告)号：US5462827A

    公开(公告)日：1995-10-31

    申请号：US184193

    申请日：1994-01-18

    申请人： Shigeru Yagi ,  Masato Ono ,  Taketoshi Higashi ,  Tsuyoshi Ohta ,  Yuzuru Fukuda

    发明人： Shigeru Yagi ,  Masato Ono ,  Taketoshi Higashi ,  Tsuyoshi Ohta ,  Yuzuru Fukuda

    IPC分类号： G03G5/082 ,  G03G5/14 ,  G03G5/147

    CPC分类号： G03G5/14704 ,  G03G5/08221 ,  G03G5/08235 ,  G03G5/144

    摘要： A negative-charging electrophotographic photoreceptor comprising an electrically conductive support having consecutively thereon (a) a charge injection prevention layer having a thickness of from 0.15 to 10 .mu.m, (b) a photoconductive layer, and (c) a surface layer, the charge injection prevention layer (a) comprising amorphous silicon containing at least one of a hydrogen atom and a halogen atom, and containing a nitrogen atom in an atomic ratio of from 0.01 to 0.65 to the silicon atom, the photoconductive layer (b) comprising amorphous silicon containing at least one of a hydrogen atom and a halogen atom.

    摘要翻译： 一种负电荷照相感光体，包括其上连续地具有导电载体（a）厚度为0.15至10μm的电荷注入阻止层，（b）光电导层，和（c）表面层，电荷 包含含有氢原子和卤素原子中的至少一个的非晶硅并且含有与硅原子的原子比为0.01至0.65的氮原子的注入防止层（a），所述光电导层（b）包含非晶硅 含有氢原子和卤素原子中的至少一个。

    Electrophotographic photoreceptor with amorphous Si-Ge layer
    6.
    发明授权
    Electrophotographic photoreceptor with amorphous Si-Ge layer 失效
    具有非晶Si-Ge层的电子照相感光体

    公开(公告)号：US5514507A

    公开(公告)日：1996-05-07

    申请号：US249964

    申请日：1994-05-27

    申请人： Shigeru Yagi ,  Tsuyoshi Ohta

    发明人： Shigeru Yagi ,  Tsuyoshi Ohta

    IPC分类号： G03G5/08 ,  G03G5/082 ,  G03G5/14 ,  G03G5/147

    CPC分类号： G03G5/08264 ,  G03G5/08221 ,  G03G5/08235 ,  G03G5/0825

    摘要： An electrophotographic photoreceptor for positive electrification comprising at least an electroconductive layer, a charge injection blocking layer, a photoconductive layer and a surface layer. The photoconductive layer comprises a layer having an amorphous silicon layer containing one or more of hydrogen, halogen and a Group III element for controlling electroconductivity and layer having an amorphous silicon germanium layer containing at least hydrogen, halogen and a Group III element. The charge injection blocking layer comprises an amorphous silicon layer containing hydrogen and a Group III element in an amount of equal or less than 1000 ppm. The electrophotographic photoreceptor has excellent electrification characteristics with dark and light sensitivities, stability against repetitive use and may be utilized as a photoreceptor for a semiconductor laser beam printer.

    摘要翻译： 一种用于正电荷的电子照相感光体，其至少包括导电层，电荷注入阻挡层，光电导层和表面层。 光电导层包括具有含有一个或多个氢，卤素和用于控制导电性的III族元素的非晶硅层的层，以及具有至少含有氢，卤素和III族元素的非晶硅锗层的层。 电荷注入阻挡层包含含有等于或小于1000ppm的氢和III族元素的非晶硅层。 电子照相感光体具有优异的起电特性，具有暗和光敏感性，耐重复使用的稳定性，可用作半导体激光束打印机的感光体。

    SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20070145416A1

    公开(公告)日：2007-06-28

    申请号：US11616603

    申请日：2006-12-27

    申请人： Tsuyoshi Ohta ,  Bungo Tanaka

    发明人： Tsuyoshi Ohta ,  Bungo Tanaka

    IPC分类号： H01L29/76

    CPC分类号： H01L29/7813 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/4236 ,  H01L29/42372 ,  H01L29/4925 ,  H01L29/4958 ,  H01L29/7397

    摘要： A semiconductor device comprises on a surface of a first semiconductor layer of the first conduction type a second semiconductor layer of the first conduction type. A semiconductor base layer of the second conduction type is formed on the second semiconductor layer, and a semiconductor diffusion layer of the first conduction type is formed on a surface of the semiconductor base layer. A trench is formed from the surface of the semiconductor diffusion layer to a depth reaching the second semiconductor layer. A gate electrode is formed of a conductor film buried in the trench with a gate insulator interposed therebetween. The conductor film includes a first conductor film formed along the gate electrode to have a recess and a second conductor film formed to fill the recess.

    摘要翻译： 半导体器件包括在第一导电类型的第一半导体层的表面上的第一导电类型的第二半导体层。 第二导电类型的半导体基层形成在第二半导体层上，并且在半导体基底层的表面上形成第一导电类型的半导体扩散层。 从半导体扩散层的表面到到达第二半导体层的深度形成沟槽。 栅电极由埋在沟槽中的导体膜形成，栅极绝缘体插入其间。 导体膜包括沿着栅电极形成以具有凹部的第一导体膜和形成为填充凹部的第二导体膜。

    Semiconductor device and method for manufacturing same
    9.
    发明授权
    Semiconductor device and method for manufacturing same 有权
    半导体装置及其制造方法

    公开(公告)号：US08502305B2

    公开(公告)日：2013-08-06

    申请号：US13421816

    申请日：2012-03-15

    申请人： Tsuyoshi Ohta ,  Tatsuya Nishiwaki ,  Norio Yasuhara ,  Masatoshi Arai ,  Takahiro Kawano

    发明人： Tsuyoshi Ohta ,  Tatsuya Nishiwaki ,  Norio Yasuhara ,  Masatoshi Arai ,  Takahiro Kawano

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7813 ,  H01L21/2255 ,  H01L21/26586 ,  H01L29/0696 ,  H01L29/0856 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66734 ,  H01L29/861

    摘要： According to an embodiment, a semiconductor device includes a semiconductor layer of a first conductive type, a base region of a second conductive type provided on the semiconductor layer and a first contact region of a second conductive type provided on the base region. The device includes a gate electrode provided in a trench piercing through the first contact region and the base region, and an interlayer insulating film provided on the gate electrode and containing a first conductive type impurity element. The device further includes a source region of a first conductive type provided between the interlayer insulating film and the first contact region, the source region being in contact with a side face of the interlayer insulating film and extending in the base region.

    摘要翻译： 根据实施例，半导体器件包括第一导电类型的半导体层，设置在半导体层上的第二导电类型的基极区域和设置在基极区域上的第二导电类型的第一接触区域。 该器件包括设置在穿过第一接触区域和基极区域的沟槽中的栅电极，以及设置在栅极上并包含第一导电型杂质元素的层间绝缘膜。 该器件还包括设置在层间绝缘膜和第一接触区域之间的第一导电类型的源极区域，源极区域与层间绝缘膜的侧面接触并且在基极区域中延伸。