公开(公告)号：US20120273052A1

公开(公告)日：2012-11-01

申请号：US13097831

申请日：2011-04-29

Applicant: ZHIYUAN YE ,  YIHWAN KIM

Inventor： ZHIYUAN YE ,  YIHWAN KIM

IPC: F16K25/00

CPC classification number: C23C16/4481 ,  C23C16/45512 ,  C23C16/45557 ,  C23C16/45561 ,  Y10T137/0318 ,  Y10T137/0329 ,  Y10T137/0335 ,  Y10T137/877 ,  Y10T436/12

Abstract: Methods and apparatus for gas delivery are disclosed herein. In some embodiments, a gas delivery system includes an ampoule for storing a precursor in solid or liquid form, a first conduit coupled to the ampoule and having a first end coupled to a first gas source to draw a vapor of the precursor from the ampoule into the first conduit, a second conduit coupled to the first conduit at a first junction located downstream of the ampoule and having a first end coupled to a second gas source and a second end coupled to a process chamber, and a heat source configured to heat the ampoule and at least a first portion of the first conduit from the ampoule to the second conduit and to heat only a second portion of the second conduit, wherein the second portion of the second conduit includes the first junction.

公开(公告)号：US20110124169A1

公开(公告)日：2011-05-26

申请号：US12849387

申请日：2010-08-03

Applicant: ZHIYUAN YE ,  SAURABH CHOPRA ,  YIHWAN KIM

Inventor： ZHIYUAN YE ,  SAURABH CHOPRA ,  YIHWAN KIM

IPC: H01L21/336 ,  H01L21/20 ,  H01L21/306

CPC classification number: H01L21/02532 ,  C23C16/325 ,  C23C16/56 ,  C30B25/04 ,  C30B25/14 ,  C30B25/18 ,  C30B33/12 ,  H01L21/02381 ,  H01L21/02538 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/3065 ,  Y10S438/929

Abstract: Methods for selectively depositing an epitaxial layer are provided herein. In some embodiments, providing a substrate having a monocrystalline first surface and a non-monocrystalline second surface; exposing the substrate to a deposition gas to deposit a layer on the first and second surfaces, the layer comprising a first portion deposited on the first surfaces and a second portion deposited on the second surfaces; and exposing the substrate to an etching gas comprising a first gas comprising hydrogen and a halogen and a second gas comprising at least one of a Group III, IV, or V element to selectively etch the first portion of the layer at a slower rate than the second portion of the layer. In some embodiments, the etching gas comprises hydrogen chloride (HCl) and germane (GeH4).

Abstract translation: 本文提供了选择性沉积外延层的方法。 在一些实施方案中，提供具有单晶第一表面和非单晶第二表面的基材; 将衬底暴露于沉积气体以在第一和第二表面上沉积层，该层包括沉积在第一表面上的第一部分和沉积在第二表面上的第二部分; 以及将所述衬底暴露于包括包含氢和卤素的第一气体和包含III，IV或V族元素中的至少一种的第二气体的蚀刻气体，以选择性地蚀刻所述层的所述第一部分， 第二部分的层。 在一些实施方案中，蚀刻气体包括氯化氢（HCl）和锗烷（GeH 4）。

公开(公告)号：US20110209660A1

公开(公告)日：2011-09-01

申请号：US13028842

申请日：2011-02-16

Applicant: NYI O. MYO ,  KEVIN BAUTISTA ,  ZHIYUAN YE ,  SCHUBERT S. CHU ,  YIHWAN KIM

Inventor： NYI O. MYO ,  KEVIN BAUTISTA ,  ZHIYUAN YE ,  SCHUBERT S. CHU ,  YIHWAN KIM

IPC: C30B25/04 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC classification number: C30B25/12 ,  C23C16/4586 ,  H01L21/68735 ,  H01L21/68742

Abstract: Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support comprising a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed.

Abstract translation: 本文提供了沉积工艺的方法和设备。 在一些实施例中，设备可以包括基底支撑件，其包括基座板，所述基座板具有设置在所述基座板的上表面中的口袋，并且具有形成在所述上表面中并围绕所述口袋的唇缘，所述​​唇缘构造成将基底 唇; 以及多个通气孔，当基底设置在唇缘上时，从口袋延伸到基座板的上表面以排出被捕获在基底的背面和口袋之间的气体。 还公开了利用本发明的用于在衬底上沉积层的方法。

公开(公告)号：US20100117154A1

公开(公告)日：2010-05-13

申请号：US12270700

申请日：2008-11-13

Applicant: ZHIYUAN YE

Inventor： ZHIYUAN YE

IPC: H01L27/088 ,  H01L21/336

CPC classification number: H01L21/823807 ,  H01L21/26513 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7848

Abstract: A semiconductor device includes a gate, a source region and a drain region that are co-doped to produce a strain in the channel region of a transistor. The co-doping can include having a source and drain region having silicon that includes boron and phosphorous or arsenic and gallium. The source and drain regions can include co-dopant levels of more than 1020 atom/cm3. The source region and drain region each can be co-doped with more boron than phosphorous or can be co-doped with more phosphorous than boron. Alternatively, the source region and drain region each can be co-doped with more arsenic than gallium or can be co-doped with more gallium than arsenic. A method of manufacturing a semiconductor device includes forming a gate on top of a substrate and over a nitrogenated oxide layer, etching a portion of the substrate and nitrogenated oxide layer to form a recessed source region and a recessed drain region, filling the recessed source region and the recessed drain region with a co-doped silicon compound. The co-doped silicon compound can include silicon, boron and phosphorous or can include silicon, arsenic and gallium. The co-doped silicon compound can be epitaxially grown in the recesses.

Abstract translation: 半导体器件包括共掺杂以在晶体管的沟道区中产生应变的栅极，源极区和漏极区。 共掺杂可以包括具有包含硼和磷或砷和镓的硅的源极和漏极区域。 源区和漏区可以包括超过1020原子/ cm3的共掺杂剂水平。 源极区域和漏极区域可以与磷共掺杂多于硼，或者可以掺杂比硼更多的磷。 或者，源极区域和漏极区域可以与镓共掺杂砷，或者可以与砷共掺杂更多的镓。 一种制造半导体器件的方法包括在衬底的顶部和氮化氧化物层上形成栅极，蚀刻衬底的一部分和氮化氧化物层，以形成凹入的源极区域和凹陷的漏极区域，填充凹陷的源极区域 和具有共掺杂硅化合物的凹陷漏极区。 共掺硅化合物可以包括硅，硼和磷，或者可以包括硅，砷和镓。 共掺杂硅化合物可以在凹槽中外延生长。

公开(公告)号：US20110306186A1

公开(公告)日：2011-12-15

申请号：US13156082

申请日：2011-06-08

Applicant: YI-CHIAU HUANG ,  DAVID K. CARLSON ,  ERROL ANTONIO C. SANCHEZ ,  ZHIYUAN YE

Inventor： YI-CHIAU HUANG ,  DAVID K. CARLSON ,  ERROL ANTONIO C. SANCHEZ ,  ZHIYUAN YE

IPC: H01L21/20 ,  B08B9/08

CPC classification number: H01L21/67115 ,  H01L21/68742

Abstract: Methods for removing residue from interior surfaces of process chambers are provided herein. In some embodiments, a method of conditioning interior surfaces of a process chamber may include maintaining a process chamber at a first pressure and at a first temperature of less than about 800 degrees Celsius; providing a process gas to the process chamber at the first pressure and the first temperature, wherein the process gas comprises chlorine and nitrogen to remove residue disposed on interior surfaces of the process chamber; and increasing the pressure in the process chamber from the first pressure to a second pressure while continuing to provide the process gas to the process chamber.

Abstract translation: 本文提供了从处理室内表面除去残留物的方法。 在一些实施例中，调节处理室的内表面的方法可以包括将处理室保持在小于约800摄氏度的第一压力和第一温度; 在所述第一压力和所述第一温度下向所述处理室提供工艺气体，其中所述工艺气体包括氯和氮以除去设置在所述处理室的内表面上的残留物; 以及将处理室中的压力从第一压力增加到第二压力，同时继续向处理室提供处理气体。