公开(公告)号：US08759201B2

公开(公告)日：2014-06-24

申请号：US13482585

申请日：2012-05-29

Applicant: Yi-Chiau Huang ,  Errol Antonio C. Sanchez ,  Xianzhi Tao

Inventor： Yi-Chiau Huang ,  Errol Antonio C. Sanchez ,  Xianzhi Tao

IPC: H01L21/36 ,  H01L21/311 ,  H01L21/469

CPC classification number: H01L21/0237 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

Abstract: A method of forming a doped semiconductor layer on a substrate is provided. A foundation layer having a crystal structure compatible with a thermodynamically favored crystal structure of the doped semiconductor layer is formed on the substrate and annealed, or surface annealed, to substantially crystallize the surface of the foundation layer. The doped semiconductor layer is formed on the foundation layer. Each layer may be formed by vapor deposition processes such as CVD. The foundation layer may be germanium and the doped semiconductor layer may be phosphorus doped germanium.

公开(公告)号：US20130256760A1

公开(公告)日：2013-10-03

申请号：US13436644

申请日：2012-03-30

Applicant: Xinyu Bao ,  Errol Antonio C. Sanchez ,  David K. Carlson ,  Zhiyuan Ye

Inventor： Xinyu Bao ,  Errol Antonio C. Sanchez ,  David K. Carlson ,  Zhiyuan Ye

IPC: H01L29/267 ,  H01L21/20

CPC classification number: H01L29/205 ,  H01L21/02381 ,  H01L21/02455 ,  H01L21/02538 ,  H01L21/0262 ,  H01L21/02694 ,  H01L29/267 ,  Y10T117/1008

Abstract: A method for forming a conformal group III/V layer on a silicon substrate and the resulting substrate with the group III/V layers formed thereon. The method includes removing the native oxide from the substrate, positioning a substrate within a processing chamber, heating the substrate to a first temperature, cooling the substrate to a second temperature, flowing a group III precursor into the processing chamber, maintaining the second temperature while flowing a group III precursor and a group V precursor into the processing chamber until a conformal layer is formed, heating the processing chamber to an annealing temperature, while stopping the flow of the group III precursor, and cooling the processing chamber to the second temperature. Deposition of the III/V layer may be made selective through the use of halide gas etching which preferentially etches dielectric regions.

Abstract translation: 一种在硅衬底上形成保形III / V层的方法，其上形成有III / V层的所得衬底。 该方法包括从衬底去除原生氧化物，将衬底定位在处理室内，将衬底加热至第一温度，将衬底冷却至第二温度，将III族前体流入处理室，保持第二温度，同时 将III族前体和V族前体流入处理室，直到形成共形层，同时停止III族前体的流动，将处理室加热至退火温度，并将处理室冷却至第二温度。 可以通过使用优先蚀刻电介质区域的卤化物气蚀刻来选择性地制备III / V层的沉积。

公开(公告)号：US20130210221A1

公开(公告)日：2013-08-15

申请号：US13765733

申请日：2013-02-13

Applicant: YI-CHIAU HUANG ,  Jiping Li ,  Miao Jin ,  Bingxi Sun Wood ,  Errol Antonio C. Sanchez ,  Yihwan Kim

Inventor： YI-CHIAU HUANG ,  Jiping Li ,  Miao Jin ,  Bingxi Sun Wood ,  Errol Antonio C. Sanchez ,  Yihwan Kim

IPC: H01L21/02

CPC classification number: H01L21/02694 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02647 ,  H01L21/02675

Abstract: Methods and apparatus for forming a germanium containing film on a patterned substrate are described. The patterned substrate is a silicon, or silicon containing material, and may have a mask material formed on a surface thereof. The germanium containing material is formed selectively on exposed silicon in the recesses of the substrate, and an overburden of at least 50% is formed on the substrate. The germanium containing layer is thermally treated using pulsed laser radiation, which melts a portion of the overburden, but does not melt the germanium containing material in the recesses. The germanium containing material in the recesses is typically annealed, at least in part, by the thermal treatment. The overburden is then removed.

Abstract translation: 描述了在图案化衬底上形成含锗膜的方法和装置。 图案化衬底是硅或含硅材料，并且可以在其表面上形成掩模材料。 含锗材料在衬底的凹槽中的暴露的硅上选择性地形成，并且在衬底上形成至少50％的覆盖层。 使用脉冲激光辐射对含锗层进行热处理，所述脉冲激光辐射熔化上覆层的一部分，但不熔化凹陷中的含锗材料。 凹陷中的含锗材料通常通过热处理至少部分退火。 然后卸下覆盖层。

公开(公告)号：US20130105483A1

公开(公告)日：2013-05-02

申请号：US13284348

申请日：2011-10-28

Applicant: David K. CARLSON ,  Errol Antonio C. SANCHEZ ,  Satheesh KUPPURAO

Inventor： David K. CARLSON ,  Errol Antonio C. SANCHEZ ,  Satheesh KUPPURAO

IPC: B65D51/16

CPC classification number: C30B23/00 ,  C23C16/4483 ,  C23C16/4488

Abstract: In some embodiments, an apparatus for sublimating solid state precursors may include a container having a body, lid, and removable bottom, wherein the removable bottom is sealable to the body to seal the container when coupled to the body; a tray insertable into the container from a bottom of the container, the tray comprising: a gas permeable base to support a solid state precursor, the gas permeable base having a through hole disposed proximate the center of the gas permeable base; an outer ring disposed around an outer edge of the base and extending upwardly from the base, the outer ring configured to interface with the lid of the container; and an inner ring disposed within the through hole, the inner ring configured to interface with the lid of the container; an inlet disposed through the lid of the container; and an outlet disposed through the lid of the container.

Abstract translation: 在一些实施例中，用于升华固体前体的装置可以包括具有主体，盖子和可移除底部的容器，其中，当联接到主体时，可移除的底部可密封到主体以密封容器; 所述托盘可从所述容器的底部插入所述容器中，所述托盘包括：透气基底，用于支撑固态前体，所述透气基底具有邻近所述透气基底的中心设置的通孔; 外环，其围绕所述基部的外边缘设置并且从所述基部向上延伸，所述外环被配置为与所述容器的盖相接触; 以及内环，其设置在所述通孔内，所述内环被配置为与所述容器的盖接合; 通过容器的盖子设置的入口; 以及通过容器的盖子布置的出口。

公开(公告)号：US08008166B2

公开(公告)日：2011-08-30

申请号：US12146177

申请日：2008-06-25

Applicant: Errol Antonio C. Sanchez ,  Johanes Swenberg ,  David K. Carlson ,  Roisin L. Doherty

Inventor： Errol Antonio C. Sanchez ,  Johanes Swenberg ,  David K. Carlson ,  Roisin L. Doherty

IPC: H01L21/20

CPC classification number: H01L21/67017 ,  C30B25/08 ,  C30B29/06 ,  H01L21/02046 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/31662 ,  H01L21/67028 ,  H01L21/67069 ,  Y10S438/976

Abstract: The present invention generally provides apparatus and method for forming a clean and damage free surface on a semiconductor substrate. One embodiment of the present invention provides a system that contains a cleaning chamber that is adapted to expose a surface of substrate to a plasma cleaning process prior to forming an epitaxial layer thereon. In one embodiment, a method is employed to reduce the contamination of a substrate processed in the cleaning chamber by depositing a gettering material on the inner surfaces of the cleaning chamber prior to performing a cleaning process on a substrate. In one embodiment, oxidation and etching steps are repeatedly performed on a substrate in the cleaning chamber to expose or create a clean surface on a substrate that can then have an epitaxial placed thereon. In one embodiment, a low energy plasma is used during the cleaning step.

Abstract translation: 本发明总体上提供了用于在半导体衬底上形成清洁和破坏自由表面的装置和方法。 本发明的一个实施例提供一种系统，其包含适于在衬底上形成外延层之前将衬底的表面暴露于等离子体清洁工艺的清洁室。 在一个实施方案中，采用一种方法来减少在清洁室中处理的基材的污染物，其中在对基材进行清洁处理之前，通过在清洁室的内表面上沉积吸气材料。 在一个实施例中，在清洁室中的基板上重复执行氧化和蚀刻步骤以暴露或产生衬底上的清洁表面，然后可以在其上放置外延。 在一个实施例中，在清洁步骤期间使用低能量等离子体。

公开(公告)号：US07172792B2

公开(公告)日：2007-02-06

申请号：US10327467

申请日：2002-12-20

Applicant: Shulin Wang ,  Errol Antonio C. Sanchez ,  Aihua Chen

Inventor： Shulin Wang ,  Errol Antonio C. Sanchez ,  Aihua Chen

IPC: C23C16/34

CPC classification number: H01L21/0217 ,  C23C16/34 ,  C23C16/345 ,  C23C16/56 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/3003 ,  H01L21/3185 ,  H01L29/665 ,  H01L29/6659

Abstract: A method of forming a silicon nitride film is described. According to the present invention, a silicon nitride film is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550° C.) to form a silicon nitride film. The thermally deposited silicon nitride film is then treated with hydrogen radicals to form a treated silicon nitride film.

Abstract translation: 描述形成氮化硅膜的方法。 根据本发明，通过在低沉积温度（例如，低于550℃）下热分解含硅/氮的源气体或含硅源气体和含氮源气体来沉积氮化硅膜，以形成 氮化硅膜。 然后用氢自由基处理热沉积的氮化硅膜，以形成经处理的氮化硅膜。

公开(公告)号：US20120306054A1

公开(公告)日：2012-12-06

申请号：US13482585

申请日：2012-05-29

Applicant: Yi-Chiau Huang ,  Errol Antonio C. Sanchez ,  Xianzhi Tao

Inventor： Yi-Chiau Huang ,  Errol Antonio C. Sanchez ,  Xianzhi Tao

IPC: H01L21/20 ,  H01L29/16 ,  H01L21/322

CPC classification number: H01L21/0237 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

Abstract: A method of forming a doped semiconductor layer on a substrate is provided. A foundation layer having a crystal structure compatible with a thermodynamically favored crystal structure of the doped semiconductor layer is formed on the substrate and annealed, or surface annealed, to substantially crystallize the surface of the foundation layer. The doped semiconductor layer is formed on the foundation layer. Each layer may be formed by vapor deposition processes such as CVD. The foundation layer may be germanium and the doped semiconductor layer may be phosphorus doped germanium.

公开(公告)号：US20110263103A1

公开(公告)日：2011-10-27

申请号：US13175446

申请日：2011-07-01

Applicant: Errol Antonio C. SANCHEZ ,  Johanes SWENBERG ,  David K. CARLSON ,  Roisin L. DOHERTY

Inventor： Errol Antonio C. SANCHEZ ,  Johanes SWENBERG ,  David K. CARLSON ,  Roisin L. DOHERTY

IPC: H01L21/20

CPC classification number: H01L21/67017 ,  C30B25/08 ,  C30B29/06 ,  H01L21/02046 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/31662 ,  H01L21/67028 ,  H01L21/67069 ,  Y10S438/976

Abstract: Embodiments described herein provide methods for processing a substrate. One embodiment comprises positioning a substrate in a processing region of a processing chamber, exposing a surface of the substrate disposed in the processing chamber to an oxygen containing gas to form a first oxygen containing layer on the surface, removing at least a portion of the first oxygen containing layer to expose at least a portion of the surface of the substrate, and exposing the surface of the substrate to an oxygen containing gas to form a second oxygen containing layer on the surface.

Abstract translation: 本文所述的实施例提供了用于处理衬底的方法。 一个实施例包括将衬底定位在处理室的处理区域中，将设置在处理室中的衬底的表面暴露于含氧气体，以在表面上形成第一含氧层，去除第一 含氧层以暴露基底表面的至少一部分，并将基底的表面暴露于含氧气体，以在表面上形成第二含氧层。

公开(公告)号：US07967911B2

公开(公告)日：2011-06-28

申请号：US11697937

申请日：2007-04-09

Applicant: David K. Carlson ,  Errol Antonio C. Sanchez ,  Satheesh Kuppurao

Inventor： David K. Carlson ,  Errol Antonio C. Sanchez ,  Satheesh Kuppurao

IPC: C23C16/448 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC classification number: C23C16/4482

Abstract: Methods and apparatus are disclosed for the formation of vaporizing liquid precursor materials. The methods or apparatus can be used as part of a chemical vapor deposition apparatus or system, for example for forming films on substrates. The methods and apparatus involve providing a vessel for containing a liquid precursor and diffusing element having external cross-section dimensions substantially equal to the internal cross-sectional dimensions of the vessel.

Abstract translation: 公开了用于形成蒸发液体前体材料的方法和装置。 方法或装置可以用作化学气相沉积装置或系统的一部分，例如用于在基底上形成膜。 所述方法和装置包括提供用于容纳液体前体的容器和具有基本上等于容器的内部横截面尺寸的外部横截面尺寸的扩散元件。

公开(公告)号：US20110100554A1

公开(公告)日：2011-05-05

申请号：US12876563

申请日：2010-09-07

Applicant: DAVID K. CARLSON ,  ERROL ANTONIO C. SANCHEZ ,  HERMAN P. DINIZ

Inventor： DAVID K. CARLSON ,  ERROL ANTONIO C. SANCHEZ ,  HERMAN P. DINIZ

IPC: H01L21/465

CPC classification number: C23C16/44 ,  C30B25/08 ,  C30B25/14

Abstract: Embodiments of a parallel system for epitaxial deposition are disclosed herein. In some embodiments, a parallel system for epitaxial deposition includes a first body having a first process chamber and a second process chamber disposed within the first body; a shared gas injection system coupled to each of the first and the second process chambers; and a shared exhaust system coupled to each of the first and second process chambers, the exhaust system having independent control of an exhaust pressure from each chamber. In some embodiments, the gas injection system provides independent control of flow rate of a gas entering each chamber.

Abstract translation: 本文公开了用于外延沉积的并联系统的实施例。 在一些实施例中，用于外延沉积的并联系统包括具有第一处理室和设置在第一主体内的第二处理室的第一主体; 耦合到所述第一和第二处理室中的每一个的共用气体注入系统; 以及联接到所述第一和第二处理室中的每一个的共用排气系统，所述排气系统独立地控制来自每个室的排气压力。 在一些实施例中，气体注入系统提供进入每个室的气体的流速的独立控制。