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    Amplifier circuit
    1.
    发明申请
    Amplifier circuit 失效
    放大器电路

    公开(公告)号：US20080001675A1

    公开(公告)日：2008-01-03

    申请号：US11808256

    申请日：2007-06-07

    申请人： Zaman Kazi ,  Junji Ito ,  Toshihiro Shogaki

    发明人： Zaman Kazi ,  Junji Ito ,  Toshihiro Shogaki

    IPC分类号： H03F3/04

    CPC分类号： H03F1/302 ,  H03F1/26 ,  H03F3/191 ,  H03F2200/18 ,  H03F2200/294 ,  H03F2200/372 ,  H03F2200/391 ,  H03F2200/75

    摘要： An amplifier circuit includes a first bipolar transistor of which the emitter is connected to the ground, and a bias circuit of the first bipolar transistor. The bias circuit includes a second bipolar transistor constituting a current mirror circuit along with the first bipolar transistor, a first resistor connected to the bases of the first bipolar transistor and the second bipolar transistor, and a third bipolar transistor of which the emitter is connected to the bases of the first bipolar transistor and the second bipolar transistor through the first resistor, and of which the base is connected to the collector of the second bipolar transistor. The first bipolar transistor amplifies a signal input to the base thereof and then outputs the amplified signal from the collector of the first bipolar transistor.

    摘要翻译： 放大器电路包括发射极连接到地的第一双极晶体管和第一双极晶体管的偏置电路。 偏置电路包括与第一双极晶体管一起构成电流镜电路的第二双极晶体管，连接到第一双极晶体管和第二双极晶体管的基极的第一电阻器，以及发射极连接到第三双极晶体管的第三双极晶体管 通过第一电阻器的第一双极晶体管和第二双极晶体管的基极，其基极连接到第二双极晶体管的集电极。 第一双极晶体管放大输入到其基极的信号，然后从第一双极晶体管的集电极输出放大的信号。

    Amplifier circuit
    2.
    发明授权
    Amplifier circuit 失效
    放大器电路

    公开(公告)号：US07525387B2

    公开(公告)日：2009-04-28

    申请号：US11808256

    申请日：2007-06-07

    申请人： Zaman Iqbal Kazi ,  Junji Ito ,  Toshihiro Shogaki

    发明人： Zaman Iqbal Kazi ,  Junji Ito ,  Toshihiro Shogaki

    IPC分类号： H03F3/04

    CPC分类号： H03F1/302 ,  H03F1/26 ,  H03F3/191 ,  H03F2200/18 ,  H03F2200/294 ,  H03F2200/372 ,  H03F2200/391 ,  H03F2200/75

    摘要： An amplifier circuit includes a first bipolar transistor of which the emitter is connected to the ground, and a bias circuit of the first bipolar transistor. The bias circuit includes a second bipolar transistor constituting a current mirror circuit along with the first bipolar transistor, a first resistor connected to the bases of the first bipolar transistor and the second bipolar transistor, and a third bipolar transistor of which the emitter is connected to the bases of the first bipolar transistor and the second bipolar transistor through the first resistor, and of which the base is connected to the collector of the second bipolar transistor. The first bipolar transistor amplifies a signal input to the base thereof and then outputs the amplified signal from the collector of the first bipolar transistor.

    摘要翻译： 放大器电路包括发射极连接到地的第一双极晶体管和第一双极晶体管的偏置电路。 偏置电路包括与第一双极晶体管一起构成电流镜电路的第二双极晶体管，连接到第一双极晶体管和第二双极晶体管的基极的第一电阻器，以及发射极连接到第三双极晶体管的第三双极晶体管 通过第一电阻器的第一双极晶体管和第二双极晶体管的基极，其基极连接到第二双极晶体管的集电极。 第一双极晶体管放大输入到其基极的信号，然后从第一双极晶体管的集电极输出放大的信号。

    BLACK MATRIX, MANUFACTURING METHOD THEREOF, AND IMAGE DISPLAY APPARATUS USING THE SAME
    4.
    发明申请
    BLACK MATRIX, MANUFACTURING METHOD THEREOF, AND IMAGE DISPLAY APPARATUS USING THE SAME 审中-公开
    黑矩阵，其制造方法和使用其的图像显示装置

    公开(公告)号：US20110199684A1

    公开(公告)日：2011-08-18

    申请号：US13029004

    申请日：2011-02-16

    申请人： Takeshi Hashimoto ,  Junji Ito

    发明人： Takeshi Hashimoto ,  Junji Ito

    IPC分类号： G02B1/11

    CPC分类号： G02B5/201 ,  G02F1/133512

    摘要： A black matrix formed on a substrate includes four layers formed by stacking a first film, a second film, a third film, and a fourth film in this order, each film being made of a transition metal oxide and a silicon oxide. A relationship of refractive index of the first film=refractive index of the third film

    摘要翻译： 形成在基板上的黑矩阵包括通过依次层叠第一膜，第二膜，第三膜和第四膜形成的四层，每个膜由过渡金属氧化物和氧化硅制成。 第一膜的折射率=第三膜的折射率<第二膜的折射率=第四膜的折射率之间的关系被设定为第四膜，第四膜是多层膜，其中各层的组成与每个膜的折射率相同 另一个，并且在TEM图片上看到时，在第四片中识别出边界。

    Mechanism for Osteosynthesis
    6.
    发明申请
    Mechanism for Osteosynthesis 审中-公开
    骨质疏松机制

    公开(公告)号：US20090234359A1

    公开(公告)日：2009-09-17

    申请号：US12085868

    申请日：2006-11-29

    申请人： Hidetoshi Onoue ,  Junji Ito ,  Toru Ikeda

    发明人： Hidetoshi Onoue ,  Junji Ito ,  Toru Ikeda

    IPC分类号： A61B17/58 ,  A61B17/80

    CPC分类号： A61B17/8605 ,  A61B17/8009 ,  A61B17/8014

    摘要： A mechanism for osteosynthesis 1 is provided that is capable of finely adjusting the amount of movement of a fractured bone, quantifying the amount of the movement and can be used both in pulling the fractured bones apart from each other and pulling the fractured bones nearer toward each other. A first mechanism for osteosynthesis 1 of the present invention comprises a plate part 2 for reducing two or more fractured bones monolithically by fixing at least both ends of the plate part 2 on the fractured bones and a sliding part 25 for moving one fractured bone along a sliding elongate hole 3 formed in the plate part 2 so as to elongate from the one fractured bone toward another fractured bone, the sliding part 25 comprising a rack 31 formed on an inner surface of the sliding elongate hole so as to extend along a sliding direction and a pin inserted in the sliding elongate hole 3, the pin 4 having a head portion 41 having a pinion for engaging with the rack 31 and a base portion 45 to be inserted into the one fractured bone, wherein the sliding part 25 moves the one fractured bone slidably along the sliding elongate hole 3 by rotating the pin 4.

    摘要翻译： 提供了一种骨接合术1的机制，其能够精细地调节骨折的移动量，量化运动量，并且可以在将骨折的骨头彼此分开的同时使用并且将骨折的骨骼拉近每个 其他。 本发明的第一种骨接合术机构1包括板部件2，用于通过将板部件2的至少两端固定在骨折骨头上来一体地还原两个或更多个断裂的骨头;以及滑动部件25，用于沿着 滑动部分25形成在板部分2上，从而从一个断裂的骨头延伸到另一个断裂的骨头，滑动部分25包括一个形成在滑动细长孔的内表面上以沿着滑动方向延伸的齿条31 以及插入在滑动长孔3中的销，销4具有头部41，头部41具有用于与齿条31接合的小齿轮和插入到一个断裂骨中的基部45，其中滑动部25移动一个 通过旋转销4，沿着滑动细长孔3可滑动地断裂骨。

    WIRELESS TRANSMITTER
    7.
    发明申请
    WIRELESS TRANSMITTER 有权
    无线发射机

    公开(公告)号：US20090011727A1

    公开(公告)日：2009-01-08

    申请号：US12014316

    申请日：2008-01-15

    申请人： Shigeki Nakamura ,  Fumiya Kamimura ,  Junji Ito ,  Hidefumi Suzaki

    发明人： Shigeki Nakamura ,  Fumiya Kamimura ,  Junji Ito ,  Hidefumi Suzaki

    IPC分类号： H04B1/04

    CPC分类号： H03F3/45085 ,  H03F3/24 ,  H03F2200/408 ,  H03F2200/451 ,  H03F2203/45612 ,  H04B2001/0416

    摘要： A wireless transmission device includes a RF power amplification section for amplifying a transmit RF signal and outputting the amplified signal to a transmission antenna, a detector section, and a control section. The RF power amplification section includes a plurality of stages of amplification, the transmit RF signal is input to an input of a first one of the plurality of stages of amplification, and an output of a last one of the plurality of stages of amplification is output to the transmission antenna. The detector section includes a plurality of detectors provided so as to correspond to the plurality of stages of amplification, each for detecting an input level of a corresponding one of the stages of amplification, and a synthesizer for synthesizing together detection outputs from the plurality of detectors. The control section controls, in a feedback control, an output level of the RF power amplification section based on an output level of the synthesizer.

    摘要翻译： 无线传输装置包括：RF功率放大部分，用于放大发射RF信号并将放大的信号输出到发射天线，检测器部分和控制部分。 RF功率放大部分包括多级放大，发射RF信号被输入到多级放大级中的第一级的输入，并输出多级放大的最后一级的输出 到发射天线。 检测器部分包括多个检测器，它们被设置为对应于多个放大级，每个检测器用于检测放大级中对应的一级的输入电平;以及合成器，用于将来自多个检测器的检测输出 。 控制部分在反馈控制中基于合成器的输出电平来控制RF功率放大部分的输出电平。

    POWER AMPLIFIER
    9.
    发明申请
    POWER AMPLIFIER 有权
    功率放大器

    公开(公告)号：US20080143445A1

    公开(公告)日：2008-06-19

    申请号：US11958966

    申请日：2007-12-18

    申请人： Shigeki NAKAMURA ,  Junji Ito

    发明人： Shigeki NAKAMURA ,  Junji Ito

    IPC分类号： H03F3/04

    CPC分类号： H03F3/45183 ,  H03F1/30 ,  H03F3/195 ,  H03F3/3022 ,  H03F2200/18 ,  H03F2200/451 ,  H03F2200/492 ,  H03F2200/513

    摘要： The present invention provides a power amplifier that includes the following: an RF operation transistor 3 having a base to which an RF signals is inputted, an emitter connected to the ground, and a collector connected to a power supply and a terminal for outputting an RF signal; a current reference transistor 12 having a collector connected to a reference current source 11, an emitter connected to the ground, and a base connected to the base of the RF operation transistor, an operational amplifier 22 formed of CMOS having one input connected to the collector of the current reference transistor and the other input connected to the base of the RF operation transistor; and a voltage-to-current conversion transistor 22 for converting the output of the operational amplifier 22 into a current to be supplied to the base of the RF operation transistor. The power amplifier has low power consumption and an efficient use of chip area, and a current variation due to the relative variation in hFE can be prevented, so as to be driven with a low power supply voltage.

    摘要翻译： 本发明提供一种功率放大器，其特征在于，包括：具有输入RF信号的基极的RF工作晶体管3，与地相连的发射极，与电源连接的集电极，以及输出RF 信号; 具有连接到参考电流源11的集电极的电流参考晶体管12，连接到地的发射极和连接到RF操作晶体管的基极的基极，由CMOS形成的运算放大器22，其具有连接到集电极的一个输入端 并且另一个输入端连接到RF操作晶体管的基极; 以及用于将运算放大器22的输出转换为要提供给RF操作晶体管的基极的电流的电压 - 电流转换晶体管22。 功率放大器具有低功耗并且有效地利用芯片面积，并且可以防止由于h FE FE的相对变化引起的电流变化，以便以低电源电压驱动。