公开(公告)号：US11205552B2

公开(公告)日：2021-12-21

申请号：US16518070

申请日：2019-07-22

Applicant: Ze Chen

Inventor： Ze Chen ,  Boon Lum Lim ,  Samuel Raj

IPC: H01H71/02 ,  H02H9/08 ,  H02H1/00 ,  H01H71/04 ,  H01H71/62 ,  H01H83/04 ,  H02H3/32 ,  H01H47/00 ,  H01H50/02 ,  H01H50/44 ,  H01H83/14 ,  H02H3/16 ,  H02H3/33 ,  H01H71/24 ,  H01H71/58 ,  H01H83/20 ,  H01H89/00 ,  H02H3/04

Abstract: In one example, a hybrid circuit interrupter may include a three-coil architecture, first coil circuitry, leakage detection circuitry, and a main processing circuit including a processor. The three-coil architecture may include a coil housing, three coils, and a plurality of coil assembly conductors. The coils may be disposed within the coil housing. The coil assembly conductors may be at least partially disposed within the coil housing. The first coil circuitry may be connected to the first coil and may generate first coil signals. The leakage detection circuitry may be connected to the other two coils and may generate a leakage signal. The processor may receive the first coil signals, receive the leakage signal, determine whether an arc fault exists based on the first coil signals, determine whether a ground fault exists based on the leakage signal, and generate a first trigger signal if a fault is determined to exist.

公开(公告)号：US10177555B2

公开(公告)日：2019-01-08

申请号：US14875721

申请日：2015-10-06

Applicant: Ze Chen

Inventor： Xincheng Pan ,  Ze Chen

IPC: H02H3/00 ,  H02H9/08 ,  H02H3/16 ,  H02H3/33

Abstract: The present disclosure relates to a reverse grounding protection circuit and a ground fault circuit interrupter. The reverse grounding protection circuit may include a power supply circuit, a leakage signal amplifying circuit, a leakage grounding detection circuit, a power supply indicator circuit, a manual detection circuit, a tripping mechanism control circuit, a reverse connection detection and execution circuit, and a power-on driving signal generating circuit. A ground fault circuit interrupter may comprise an interrupter body and a reverse grounding protection circuit in the interrupter body. The practice of the present disclosure may avoid the risk from reverse connection of the ground fault circuit interrupter and output of power of reverse connection, and thus improve safety of the ground fault circuit interrupter.

公开(公告)号：US20160172839A1

公开(公告)日：2016-06-16

申请号：US14875721

申请日：2015-10-06

Applicant: Ze Chen

Inventor： Xincheng Pan ,  Ze Chen

IPC: H02H3/16

CPC classification number: H02H3/16 ,  H02H3/33

Abstract: The present disclosure relates to a reverse grounding protection circuit and a ground fault circuit interrupter. The reverse grounding protection circuit may include a power supply circuit, a leakage signal amplifying circuit, a leakage grounding detection circuit, a power supply indicator circuit, a manual detection circuit, a tripping mechanism control circuit, a reverse connection detection and execution circuit, and a power-on driving signal generating circuit. A ground fault circuit interrupter may comprise an interrupter body and a reverse grounding protection circuit in the interrupter body. The practice of the present disclosure may avoid the risk from reverse connection of the ground fault circuit interrupter and output of power of reverse connection, and thus improve safety of the ground fault circuit interrupter.

Abstract translation: 本公开涉及一种反向接地保护电路和一个接地故障电路断续器。 反接地保护电路可以包括电源电路，泄漏信号放大电路，泄漏接地检测电路，电源指示电路，手动检测电路，跳闸机构控制电路，反向连接检测和执行电路，以及 上电驱动信号发生电路。 接地故障电路断路器可以包括断续器主体和断续器主体中的反向接地保护电路。 本公开的实践可以避免接地故障电路中断器的反向连接和反向连接的功率的输出的风险，从而提高接地故障电路断续器的安全性。

公开(公告)号：US09287391B2

公开(公告)日：2016-03-15

申请号：US14370048

申请日：2012-03-05

Applicant: Ze Chen ,  Katsumi Nakamura

Inventor： Ze Chen ,  Katsumi Nakamura

IPC: H01L29/06 ,  H01L29/739 ,  H01L29/423 ,  H01L29/40

CPC classification number: H01L29/0634 ,  H01L29/0619 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/4236 ,  H01L29/7397

Abstract: A semiconductor device includes a semiconductor substrate in which an active region and an edge termination region are defined, a semiconductor element formed in the active region, and first to fourth P layers formed in a region spanning from an edge portion of the active region to the edge termination region in the surface of the semiconductor substrate. The first to fourth P layers respectively have surface concentrations P(1) to P(4) that decrease in this order, bottom-end distances D(1) to D(4) that increase in this order, and distances B(1) to B(4) to the edge of the semiconductor substrate that increase in this order. The surface concentration P(4) is 10 to 1000 times the impurity concentration of the semiconductor substrate, and the bottom-end distance D(4) is in the range of 15 to 30 μm.

Abstract translation: 半导体器件包括其中限定有源区和边缘终端区的半导体衬底，形成在有源区中的半导体元件，以及形成在从有源区的边缘部分到 边缘端接区域。 第一至第四P层分别具有按此顺序降低的表面浓度P（1）至P（4），以该顺序增加的底端距离D（1）至D（4），距离B（1） 到B（4）到依次增加的半导体衬底的边缘。 表面浓度P（4）是半导体衬底的杂质浓度的10〜1000倍，底端距离D（4）在15〜30μm的范围内。

公开(公告)号：US10033180B2

公开(公告)日：2018-07-24

申请号：US14886445

申请日：2015-10-19

Applicant: Ze Chen

Inventor： Xincheng Pan ,  Ze Chen

IPC: H02H3/16 ,  H02H11/00 ,  H02H3/33 ,  H02H3/04

Abstract: The present invention relates to a ground fault protection circuit and a ground fault circuit interrupter. A ground fault protection circuit may include a power supply circuit, a ground fault detection circuit, a signal amplifying and shaping circuit, a microcontroller control circuit, a power supply detection and indicator circuit, a tripping mechanism control circuit, and a reverse grounding detection and execution circuit. A ground fault circuit interrupter may comprise an interrupter body with a ground fault protection circuit in the interrupter body. The practice of the present disclosure may address installation safety risks of conventional ground fault circuit interrupters and arc fault circuit interrupter and improve the safety of ground fault circuit interrupters.

公开(公告)号：US20170170649A1

公开(公告)日：2017-06-15

申请号：US15375324

申请日：2016-12-12

Applicant: Ze Chen

Inventor： Ze Chen ,  Xincheng Pan ,  Ye Zhang

IPC: H02H7/125 ,  H02M7/217

CPC classification number: H02H3/334

Abstract: The present disclosure relates to a power supply grounding fault protection circuit. A power supply grounding fault protection circuit may include a power supply circuit, a leakage grounding detection circuit, a signal amplifying and shaping circuit, a microcontroller control circuit, a power supply detection and indicator circuit, a tripping mechanism control circuit, a reverse grounding detection and execution circuit, a wireless network circuit, and an automatic resetting circuit. The practice of the present disclosure may permit a user to reset the grounding fault circuit interrupter remotely after a leaking fault of a circuit is eliminated.

公开(公告)号：US20170047726A1

公开(公告)日：2017-02-16

申请号：US14886445

申请日：2015-10-19

Applicant: Ze Chen

Inventor： Xincheng Pan ,  Ze Chen

IPC: H02H3/16

CPC classification number: H02H11/002 ,  H02H3/04 ,  H02H3/33

Abstract: The present invention relates to a ground fault protection circuit and a ground fault circuit interrupter. A ground fault protection circuit may include a power supply circuit, a ground fault detection circuit, a signal amplifying and shaping circuit, a microcontroller control circuit, a power supply detection and indicator circuit, a tripping mechanism control circuit, and a reverse grounding detection and execution circuit. A ground fault circuit interrupter may comprise an interrupter body with a ground fault protection circuit in the interrupter body. The practice of the present disclosure may address installation safety risks of conventional ground fault circuit interrupters and arc fault circuit interrupter and improve the safety of ground fault circuit interrupters.

Abstract translation: 本发明涉及一种接地故障保护电路和一个接地故障电路断续器。 接地故障保护电路可以包括电源电路，接地故障检测电路，信号放大和整形电路，微控制器控制电路，电源检测和指示器电路，跳闸机构控制电路和反接地检测和 执行电路。 接地故障电路断路器可以包括在断续器主体中具有接地故障保护电路的断续器体。 本公开的实践可以解决传统的接地故障电路断路器和电弧故障电路中断器的安装风险，并提高接地故障电路断路器的安全性。

公开(公告)号：US09385183B2

公开(公告)日：2016-07-05

申请号：US14434388

申请日：2012-12-06

Applicant: Ze Chen ,  Tsuyoshi Kawakami ,  Katsumi Nakamura

Inventor： Ze Chen ,  Tsuyoshi Kawakami ,  Katsumi Nakamura

IPC: H01L27/01 ,  H01L27/12 ,  H01L31/0392 ,  H01L29/06 ,  H01L29/739 ,  H01L29/423

CPC classification number: H01L29/0619 ,  H01L29/0638 ,  H01L29/4236 ,  H01L29/7395 ,  H01L29/7397

Abstract: The termination region includes a ring region (LNFLR). A plurality of ring-shaped P-type ring layers are regularly arranged in the ring region (LNFLR). The ring region (LNFLR) is divided into a plurality of units which include the plurality of P-type ring layers respectively. A width of each unit is constant. A total number of P-type impurities in the ring region (LNFLR) is N, the target withstand voltage is BV [V], a width of each unit is SandL [μm], and the number of the plurality of units is num, following relationships are satisfied. N≧(M×BV)γ, M=104 to 105, γ=0.55 to 1.95, SandL×num×Ecri≧2×α×BV, Ecri=2.0 to 3.0×105 [V/cm], α=100 to 101. Widths of the P-type ring layers of the plurality of units linearly decrease toward an outside of the termination region.

Abstract translation: 终端区域包括环形区域（LNFLR）。 多个环形P型环层规则地布置在环形区域（LNFLR）中。 环区域（LNFLR）被分成多个单元，分别包括多个P型环层。 每个单位的宽度是恒定的。 环状区域（LNFLR）中的P型杂质的总数为N，目标耐受电压为BV [V]，每个单位的宽度为SandL [μm]，多个单位的数量为num， 满足以下关系。 N≥（M×BV）γ，M = 104〜105，γ= 0.55〜1.95，SandL×num×Ecri≥2×α×BV，Ecri = 2.0〜3.0×105 [V / cm]，α= 多个单元的P型环层的宽度朝着端接区域的外侧线性地减小。

公开(公告)号：US09041051B2

公开(公告)日：2015-05-26

申请号：US14111168

申请日：2011-07-05

Applicant: Ze Chen ,  Katsumi Nakamura

Inventor： Ze Chen ,  Katsumi Nakamura

IPC: H01L29/36 ,  H01L29/739 ,  H01L29/861 ,  H01L29/06 ,  H01L29/08

CPC classification number: H01L29/7397 ,  H01L29/0615 ,  H01L29/063 ,  H01L29/0696 ,  H01L29/0821 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/41708 ,  H01L29/7393 ,  H01L29/861

Abstract: An insulated gate bipolar transistor having a gate electrode (7) and an emitter electrode (9) is provided in a transistor region. A termination region is arranged around the transistor region. A first N type buffer layer (18) is provided below an N type drift layer (1) in the transistor region. A P type collector layer (19) is provided below the first N type buffer layer (18). A second N type buffer layer (20) is provided below the N type drift layer (1) in the termination region. A collector electrode (21) is directly connected to the P type collector layer (19) and the second N type buffer layer (20). An impurity concentration of the second N type buffer layer (20) decreases as a distance from the collector electrode (21) decreases. The second N type buffer layer (20) does not form any ohmic contact with the collector electrode (21).

Abstract translation: 具有栅极（7）和发射极（9）的绝缘栅双极晶体管设置在晶体管区域中。 端子区域布置在晶体管区域周围。 第一N型缓冲层（18）设置在晶体管区域中的N型漂移层（1）的下方。 在第一N型缓冲层（18）的下方设置有P型集电体层（19）。 第二N型缓冲层（20）设置在终端区域中的N型漂移层（1）的下方。 集电极（21）直接连接到P型集电极层（19）和第二N型缓冲层（20）。 随着与集电极（21）的距离减小，第二N型缓冲层（20）的杂质浓度降低。 第二N型缓冲层（20）不与集电极（21）形成任何欧姆接触。

公开(公告)号：US11165240B2

公开(公告)日：2021-11-02

申请号：US16511064

申请日：2019-07-15

Applicant: Ze Chen

Inventor： Ze Chen ,  Boon Lum Lim ,  Samuel Raj

IPC: H02H3/33 ,  H02H3/07 ,  H02H3/16 ,  H02H3/17 ,  H02H1/00

Abstract: In one example, a ground fault circuit interrupter is provided. It may include a current imbalance detection circuit configured to provide a leakage signal and a main processing circuit including a processor. The leakage signal may correspond to a current imbalance between a supply path and a return path. The processor may be configured to receive the leakage signal, analyze a time pattern of the leakage signal, determine whether a ground fault exists based on analysis of the time pattern, and generate a first trigger signal if the ground fault is determined to exist. The ground fault circuit interrupter may further include a back-EMF detection circuit configured to provide a back-EMF detection signal. Methods for detecting and responding to a ground fault are also provided.