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29 条记录 (耗时 0.019 秒)

    Micro-Emitter Array Based Full-Color Micro-Display
    2.
    发明申请
    Micro-Emitter Array Based Full-Color Micro-Display 有权
    基于微发射体阵列的全彩显微镜

    公开(公告)号：US20090078955A1

    公开(公告)日：2009-03-26

    申请号：US12238642

    申请日：2008-09-26

    申请人： Zhaoyang Fan ,  Jing Li ,  Jingyu Lin ,  Hongxing Jiang

    发明人： Zhaoyang Fan ,  Jing Li ,  Jingyu Lin ,  Hongxing Jiang

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L27/15 ,  H01L27/156

    摘要： Disclosed is a semiconductor micro-emitter array for use in a full-color microdisplay. Each pixel includes three vertically-stacked red, green, and blue micro-emitters which minimizes pixel size. The microdisplay may be exclusively based on Group III-nitride semiconductors, with differing indium concentrations in three respective InGaN/GaN active regions for emitting the three RGB colors. Alternatively the microdisplay may be based on hybrid integration of InGaN based III-nitride semiconductors for blue and green emissions, and AlGaInP based (e.g., Group III-V) semiconductors for red emissions.

    摘要翻译： 公开了一种用于全色微显示器的半导体微发射器阵列。 每个像素包括三个垂直堆叠的红色，绿色和蓝色微型发射器，使像素大小最小化。 微显示器可以专门基于III族氮化物半导体，在三个相应的InGaN / GaN有源区域中具有不同的铟浓度用于发射三种RGB颜色。 或者，微显示器可以基于用于蓝色和绿色发射的InGaN基III族氮化物半导体和用于红色发射的AlGaInP（例如III-V族）半导体的混合集成。

    Micro-emitter array based full-color micro-display
    4.
    发明授权
    Micro-emitter array based full-color micro-display 有权
    基于微发射器阵列的全色微显示器

    公开(公告)号：US08058663B2

    公开(公告)日：2011-11-15

    申请号：US12238642

    申请日：2008-09-26

    申请人： Zhaoyang Fan ,  Jing Li ,  Jingyu Lin ,  Hongxing Jiang

    发明人： Zhaoyang Fan ,  Jing Li ,  Jingyu Lin ,  Hongxing Jiang

    IPC分类号： H01L33/00

    CPC分类号： H01L27/15 ,  H01L27/156

    摘要： Disclosed is a semiconductor micro-emitter array for use in a full-color microdisplay. Each pixel includes three vertically-stacked red, green, and blue micro-emitters which minimizes pixel size. The microdisplay may be exclusively based on Group III-nitride semiconductors, with differing indium concentrations in three respective InGaN/GaN active regions for emitting the three RGB colors. Alternatively the microdisplay may be based on hybrid integration of InGaN based III-nitride semiconductors for blue and green emissions, and AlGaInP based (e.g., Group III-V) semiconductors for red emissions.

    摘要翻译： 公开了一种用于全色微显示器的半导体微发射器阵列。 每个像素包括三个垂直堆叠的红色，绿色和蓝色微型发射器，使像素大小最小化。 微显示器可以专门基于III族氮化物半导体，在三个相应的InGaN / GaN有源区域中具有不同的铟浓度用于发射三种RGB颜色。 或者，微显示器可以基于用于蓝色和绿色发射的InGaN基III族氮化物半导体和用于红色发射的AlGaInP（例如III-V族）半导体的混合集成。

    Encapsulation and packaging of ultraviolet and deep-ultraviolet light emitting diodes
    7.
    发明申请
    Encapsulation and packaging of ultraviolet and deep-ultraviolet light emitting diodes 审中-公开
    紫外线和深紫外线发光二极管的封装和封装

    公开(公告)号：US20060138443A1

    公开(公告)日：2006-06-29

    申请号：US11020762

    申请日：2004-12-23

    申请人： Zhaoyang Fan ,  Hongxing Jiang ,  Jingyu Lin

    发明人： Zhaoyang Fan ,  Hongxing Jiang ,  Jingyu Lin

    IPC分类号： H01L33/00 ,  H01L29/24

    CPC分类号： H01L33/56 ,  H01L33/58 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/01322 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

    摘要： Disclosed are the materials and methods used to package and encapsulate UV and DUV LEDs. These LEDs have emission wavelengths in the range from around 360 nm to around 200 nm. The UV/DUV LED die or its flip-chip bonded subassembly are disposed in a low thermal resistance packaging house. Either the whole package or just the UV/DUV LED is globed with a UV/DUV transparent dome-shape encapsulation. This protects the device, enhances light extraction, and focuses the light emitted. The dome-shape encapsulation may be comprised of optically transparent PMMA, fluorinated polymers or other organic materials. Alternatively it might be configured having a lens made from sapphire, fused silica or other transparent materials. The lens material is cemented on the UV/DUV LED with UV/DUV transparent polymers.

    摘要翻译： 披露的是用于封装和封装UV和DUV LED的材料和方法。 这些LED具有在约360nm至约200nm范围内的发射波长。 UV / DUV LED芯片或其倒装芯片接合子组件设置在低热阻包装室内。 整个封装或只是UV / DUV LED都采用UV / DUV透明的圆顶形封装。 这样可以保护设备，增强光线提取，并对发出的光线进行聚焦。 圆顶形包封可以由光学透明的PMMA，氟化聚合物或其它有机材料组成。 或者，其可以被配置为具有由蓝宝石，熔融石英或其它透明材料制成的透镜。 透镜材料用UV / DUV透明聚合物胶合在UV / DUV LED上。

    III-nitride quantum-well field effect transistors
    8.
    发明申请
    III-nitride quantum-well field effect transistors 审中-公开
    III族氮化物量子阱场效应晶体管

    公开(公告)号：US20050133816A1

    公开(公告)日：2005-06-23

    申请号：US10741268

    申请日：2003-12-19

    申请人： Zhaoyang Fan ,  Jing Li ,  Hongxing Jiang ,  Jingyu Lin

    发明人： Zhaoyang Fan ,  Jing Li ,  Hongxing Jiang ,  Jingyu Lin

    IPC分类号： H01L31/072

    CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/66462

    摘要： A transistor with improved device characteristics includes a substrate, a first buffer layer deposited on the substrate, a highly resistive epilayer deposited on the buffer layer, a second epilayer deposited on the highly resistive epilayer, a channel layer deposited on the second epilayer, an AlGaN alloy epilayer deposited on the channel layer, and source, gate, and drain connections deposited on the AlGaN alloy epilayer. The highly resistive epilayer may include AlGaN, InAlGaN, AlBN, or AlN compositions. The channel layer may include InGaN, graded InGaN, multilayers of InGaN and GaN, or GaN.

    摘要翻译： 具有改进的器件特性的晶体管包括衬底，沉积在衬底上的第一缓冲层，沉积在缓冲层上的高电阻外延层，沉积在高电阻外延层上的第二外延层，沉积在第二外延层上的沟道层，AlGaN 沉积在沟道层上的合金外延层以及沉积在AlGaN合金外延层上的源极，栅极和漏极连接。 高电阻外延层可以包括AlGaN，InAlGaN，AlBN或AlN组合物。 沟道层可以包括InGaN，渐变InGaN，InGaN和GaN的多层或GaN。

    Light emitting diode lamp capable of high AC/DC voltage operation
    9.
    发明授权
    Light emitting diode lamp capable of high AC/DC voltage operation 有权
    发光二极管灯能够实现高交流/直流电压工作

    公开(公告)号：US08272757B1

    公开(公告)日：2012-09-25

    申请号：US11144982

    申请日：2005-06-03

    申请人： Zhaoyang Fan ,  Hongxing Jiang ,  Jingyu Lin

    发明人： Zhaoyang Fan ,  Hongxing Jiang ,  Jingyu Lin

    IPC分类号： F21V9/00

    CPC分类号： H01L25/0753 ,  H01L33/62 ,  H01L2224/16225 ,  H05B33/0821

    摘要： A solid-state LED lighting lamp (SSL-LED lamp), based on AC or DC-emitters, which runs under a high AC or DC voltage, with high light generation capability, high reliability and long lifespan, is disclosed. A plurality of AC or DC-emitter chips are integrated on a thermally conductive submount and the electrically conductive element pathways on the submount provide electrical interconnections between the mounted chips and also between the individual LEDs on each chip. The conducting elements also provide redundant current paths at the AC or DC-emitter chip level and individual LED level. Depending on the detail design, the LED SSL-lamp may be directly powered by an AC voltage (i.e. 110/120V or 220/240V power grid) or a high DC voltage. With this design, the LED SSL-lamp can provide sufficient illumination to replace the incandescent or florescent light bulbs for general lighting purpose. The distributed emitter array design ensures the heat dissipation. The redundant current path design ensures the long lifespan and high reliability.

    摘要翻译： 公开了一种基于AC或DC发射器的固态LED照明灯（SSL-LED灯），其以高交流或直流电压运行，具有高发光能力，高可靠性和长寿命。 多个AC或DC发射器芯片集成在导热基座上，并且底座上的导电元件通路在安装的芯片之间以及每个芯片上的各个LED之间提供电互连。 导电元件还在AC或DC发射极芯片级和单独的LED电平处提供冗余电流路径。 根据细节设计，LED SSL灯可以由AC电压（即110 / 120V或220 / 240V电网）或高DC电压直接供电。 通过这种设计，LED SSL灯可以提供足够的照明来替代用于一般照明目的的白炽灯或荧光灯泡。 分布式发射极阵列设计确保散热。 冗余电流路径设计确保了长寿命和高可靠性。