公开(公告)号：US06551903B1

公开(公告)日：2003-04-22

申请号：US09807373

申请日：2001-05-31

申请人： Zhengrong Shi ,  Paul Alan Basore ,  Stuart Ross Wenham ,  Guangchun Zhang ,  Shijun Cai

发明人： Zhengrong Shi ,  Paul Alan Basore ,  Stuart Ross Wenham ,  Guangchun Zhang ,  Shijun Cai

IPC分类号： H01L2176

CPC分类号： H01L31/1804 ,  H01L31/022425 ,  H01L31/03529 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/919

摘要： A thin film photovoltaic devices is described, having a glass substrate 11 over which is formed a thin film silicon device having an n++ layer 12, a p layer 13 and a dielectric layer 14 (typically silicon oxide or silicon nitride). To create a connection through the p layer 13 to the underlying n++ layer 12, a column of semi-conductor material is heated, the column passing through the various doped layers and the material in the column being heated or melted to allow migration of dopant between layer of the device in the region of the column.

摘要翻译： 描述了一种薄膜光伏器件，其具有形成有具有n ++层12，p层13和电介质层14（通常为氧化硅或氮化硅）的薄膜硅器件的玻璃衬底11。 为了创建通过p层13到底层n ++层12的连接，加热了一列半导体材料，柱通过各种掺杂层，并且柱中的材料被加热或熔化，以允许掺杂剂在 在该区域的设备的层。

公开(公告)号：US06538195B1

公开(公告)日：2003-03-25

申请号：US09831236

申请日：2001-05-31

申请人： Zhengrong Shi ,  Stuart Ross Wenham ,  Martin Andrew Green ,  Paul Alan Basore ,  Jing Jia Ji

发明人： Zhengrong Shi ,  Stuart Ross Wenham ,  Martin Andrew Green ,  Paul Alan Basore ,  Jing Jia Ji

IPC分类号： H01L310236

CPC分类号： C03C17/3636 ,  C03C17/3642 ,  C03C17/3678 ,  C03C2217/73 ,  C03C2218/31 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/03921 ,  H01L31/056 ,  Y02E10/52

摘要： A thin film silicon solar cell is provided on a glass substrate, the glass having a textured surface, including larger scale surface features and smaller scale surface features. Over the surface is deposited a thin barrier layer which also serves as an anti-reflection coating. The barrier layer may be a silicon nitride layer for example and will be 70 nm±20% in order to best achieve its anti-reflection function. Over the barrier layer is formed an essentially conformal silicon film having a thickness which is less than the dimensions of the larger scale features of the glass surface and of a similar dimension to the smaller scale features of the glass surface.

摘要翻译： 薄膜硅太阳能电池设置在玻璃基板上，该玻璃具有纹理表面，包括较大刻度的表面特征和较小的刻度表面特征。 在表面上沉积也用作抗反射涂层的薄阻挡层。 阻挡层例如可以是氮化硅层，为了最好地实现其抗反射功能，为70nm±20％。 在阻挡层上形成基本上保形的硅膜，其厚度小于玻璃表面的较大尺度特征的尺寸，并且具有与玻璃表面的较小尺度特征相似的尺寸。

公开(公告)号：US5942050A

公开(公告)日：1999-08-24

申请号：US849584

申请日：1997-05-29

申请人： Martin Andrew Green ,  Stuart Ross Wenham ,  Zhengrong Shi

发明人： Martin Andrew Green ,  Stuart Ross Wenham ,  Zhengrong Shi

IPC分类号： H01L31/04 ,  H01L29/06 ,  H01L31/036 ,  H01L31/076 ,  H01L31/077 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0392

CPC分类号： H01L31/076 ,  H01L31/077 ,  H01L31/1872 ,  Y02E10/548 ,  Y02P70/521

摘要： A semiconductor structure and method of forming the structure, where a supporting substrate or superstrate provides the mechanical strength to support overlying thin active regions. The thin dielectric layer deposited over the substrate or superstrate serves to isolate the deposited layers from the substrate from optical, metallurgical and/or chemical perspectives. A seeding layer is then deposited, the seeding layer being of n-type silicon with appropriate treatments to give the desired large grain size. This layer may be crystallized as it is deposited, or may be deposited in amorphous form and then crystallized with further processing. A stack of alternating polarity layers of amorphous silicon or silicon alloy incorporating n-type or p-type dopants in the alternating layers is then deposited over the seeding layer. Solid phase crystallization is then performed to give the desired grain size of 3 .mu.m or larger which can be achieved by extended heating of the layers at low temperature.

摘要翻译： PCT No.PCT / AU95 / 00812 Sec。 371日期1997年5月29日 102（e）日期1997年5月29日PCT提交1995年12月1日PCT公布。 第WO96 / 17388号公报 日期1996年6月6日一种形成结构的半导体结构和方法，其中支撑衬底或覆层提供机械强度以支撑上覆的薄活性区域。 沉积在衬底或衬底上的薄介电层用于将沉积的层与衬底与光学，冶金和/或化学透视隔离。 然后沉积接种层，通过适当的处理，接种层为n型硅，以得到所需的大晶粒尺寸。 该层可以在其沉积时结晶，或者可以非晶形式沉积，然后进一步加工结晶。 然后在接合层上沉积在交替层中并入n型或p型掺杂剂的非晶硅或硅合金交替极性层的堆叠。 然后进行固相结晶，得到3μm或更大的所需晶粒尺寸，这可以通过在低温下对层进行扩展加热来实现。

公开(公告)号：US20090007962A1

公开(公告)日：2009-01-08

申请号：US12125817

申请日：2008-05-22

申请人： Stuart Ross Wenham ,  Ly Mai ,  Zhengrong Shi ,  Jinglia Ji

发明人： Stuart Ross Wenham ,  Ly Mai ,  Zhengrong Shi ,  Jinglia Ji

IPC分类号： H01L31/00 ,  H01L21/22 ,  H01L21/00

CPC分类号： H01L21/44 ,  H01L21/743 ,  H01L31/022425 ,  H01L31/022433 ,  Y02E10/50

摘要： A solar cell comprises adjacent regions of oppositely doped semiconductor material forming a pn junction substantially parallel to front and rear surfaces of the solar cell. A surface of the semiconductor material has a plurality of depressions, with semiconductor material regions forming internal wall surface regions of the depressions being doped to the polarity of one of the semiconductor regions, with which they are in electrical communication. The wall surface regions of the depressions are isolated from the other oppositely doped semiconductor region and form contact points for a contact structure contacting the surface in which the depressions are formed. A dielectric layer is formed over the surface, the dielectric layer being thinner or non-existent in at least a portion of each depression, such that a screen printed metal contact structure formed over the dielectric layer and extending into the depressions makes contact with the semiconductor material in the depressions after sintering.

摘要翻译： 太阳能电池包括相反掺杂的半导体材料的相邻区域，其形成基本上平行于太阳能电池的前表面和后表面的pn结。 半导体材料的表面具有多个凹陷，半导体材料区域形成凹陷的内壁表面区域被掺杂到半导体区域之一的极性，并与它们电连通。 凹陷的壁表面区域与另一个相反掺杂的半导体区域隔离，并形成接触构件的接触点，接触构件与形成凹部的表面接触。 在表面上形成电介质层，电介质层在每个凹陷的至少一部分中更薄或不存在，使得形成在电介质层上并延伸到凹陷中的丝网印刷金属接触结构与半导体 材料在烧结后的凹陷中。

公开(公告)号：US08153890B2

公开(公告)日：2012-04-10

申请号：US12125817

申请日：2008-05-22

申请人： Stuart Ross Wenham ,  Ly Mai ,  Zhengrong Shi ,  JingJia Ji

发明人： Stuart Ross Wenham ,  Ly Mai ,  Zhengrong Shi ,  JingJia Ji

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L21/44 ,  H01L21/743 ,  H01L31/022425 ,  H01L31/022433 ,  Y02E10/50

摘要： A solar cell comprises adjacent regions of oppositely doped semiconductor material forming a pn junction substantially parallel to front and rear surfaces of the solar cell. A surface of the semiconductor material has a plurality of depressions, with semiconductor material regions forming internal wall surface regions of the depressions being doped to the polarity of one of the semiconductor regions, with which they are in electrical communication. The wall surface regions of the depressions are isolated from the other oppositely doped semiconductor region and form contact points for a contact structure contacting the surface in which the depressions are formed. A dielectric layer is formed over the surface, the dielectric layer being thinner or non-existent in at least a portion of each depression, such that a screen printed metal contact structure formed over the dielectric layer and extending into the depressions makes contact with the semiconductor material in the depressions after sintering.

摘要翻译： 太阳能电池包括相反掺杂的半导体材料的相邻区域，其形成基本上平行于太阳能电池的前表面和后表面的pn结。 半导体材料的表面具有多个凹陷，半导体材料区域形成凹陷的内壁表面区域被掺杂到半导体区域之一的极性，并与它们电连通。 凹陷的壁表面区域与另一个相反掺杂的半导体区域隔离，并形成接触构件的接触点，接触构件与形成凹部的表面接触。 在表面上形成电介质层，电介质层在每个凹陷的至少一部分中更薄或不存在，使得形成在电介质层上并延伸到凹陷中的丝网印刷金属接触结构与半导体 材料在烧结后的凹陷中。

公开(公告)号：US06624009B1

公开(公告)日：2003-09-23

申请号：US09297502

申请日：1999-04-30

申请人： Martin Andrew Green ,  Zhengrong Shi ,  Paul Alan Basore ,  JingJia Ji

发明人： Martin Andrew Green ,  Zhengrong Shi ,  Paul Alan Basore ,  JingJia Ji

IPC分类号： H01L2100

CPC分类号： H01L31/03682 ,  C03C17/245 ,  C03C17/3435 ,  C03C17/3482 ,  C03C2217/282 ,  C30B1/02 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/02524 ,  H01L21/02587 ,  H01L31/03921 ,  H01L31/1872 ,  Y02E10/546 ,  Y02P70/521

摘要： A method of crystallizing amorphous silicon on a glass substrate relies on deliberately heating the glass substrate above its strain point during processing, making low temperature glasses, such as soda lime glasses, ideal for such use. Since the glass is plastic above this temperature while the silicon remains elastic, the glass is forced to conform to the shape defined by the silicon once this temperature is exceeded. This process relaxes any stresses which might otherwise be created in the glass or film, as long as the glass temperature is above the strain point. As the glass temperature is reduced back below the strain point, the glass becomes progressively more rigid and stresses will begin to build up in the film and glass. When cooled slowly, the stress in the film and the glass can be controlled by appropriate selection of a thermal expansion coefficient of the glass relative to that of silicon, particularly those with linear expansion coefficients in the range 4-10 ppm/° C. below the strain point.

摘要翻译： 在玻璃基板上结晶非晶硅的方法依赖于在加工过程中故意将玻璃基板加热到其应变点以上，制成低温玻璃如钠钙玻璃，是理想的用途。 由于玻璃是高于该温度的塑料，而硅保持弹性，所以一旦超过这个温度，玻璃将被迫符合硅所定义的形状。 只要玻璃温度高于应变点，该方法可以缓解玻璃或薄膜中可能产生的任何应力。 当玻璃温度降低到应变点以下时，玻璃逐渐变硬，应力将开始在薄膜和玻璃中积聚。 当缓慢冷却时，可以通过适当选择玻璃相对于硅的热膨胀系数，特别是线性膨胀系数在4-10ppm /℃范围内的热膨胀系数来控制膜和玻璃中的应力。 应变点。

公开(公告)号：US20120018403A1

公开(公告)日：2012-01-26

申请号：US12734840

申请日：2008-01-30

申请人： Jingjia Ji ,  Graham Artes ,  Zhengrong Shi

发明人： Jingjia Ji ,  Graham Artes ,  Zhengrong Shi

IPC分类号： B65G13/04 ,  B05D1/02 ,  B08B1/02 ,  C23F1/00

CPC分类号： H05K3/0097 ,  C23F1/08 ,  H05K1/0393 ,  H05K3/0085 ,  H05K2203/0143 ,  H05K2203/1545

摘要： A roller group for transporting a thin substrate (16) comprises an upper roller (12) fixed to an upper roller shaft (10) and a lower roller (18) fixed to a lower roller shaft (10), the upper and lower rollers rotating reversely at the same linear velocity in a clockwise direction and a counter-clockwise direction respectively to allow the thin substrate to move towards a certain direction. The upper roller includes a fixed roller and a plurality of elastic pieces secured on the fixed roller around its outer circumference surface. A method for performing a chemical treatment by using the above roller group for transporting a thin substrate comprises: using one or more sets of the roller groups to allow the thin substrate to continuously move towards one direction, so as to perform a continuous wet-chemical treatment to the thin substrate using a solution. The upper roller can ensure the smooth transporting of the thin substrate in any case even if the thin substrate disengages from the lower roller, to the effect that performs the continuous wet-chemical treatment.

摘要翻译： 用于输送薄基板（16）的辊组包括固定到上辊轴（10）的上辊（12）和固定到下辊轴（10）的下辊（18），上辊和下辊旋转 在顺时针方向和逆时针方向上以相同的线速度相反地反向以允许薄的衬底向某一方向移动。 上辊包括固定辊和围绕其外圆周表面固定在固定辊上的多个弹性件。 通过使用上述用于输送薄基板的辊组进行化学处理的方法包括：使用一组或多组辊组以允许薄基板朝向一个方向连续移动，以便执行连续的湿化学 使用溶液处理到薄基材。 即使薄基板与下辊分离，上辊可以确保薄基板的平滑运输，从而实现连续的湿化学处理。

公开(公告)号：US20110045631A1

公开(公告)日：2011-02-24

申请号：US12226479

申请日：2006-05-24

申请人： Jingjia Ji ,  Zhengrong Shi ,  Yusen Qin ,  Stuart Wenham ,  Graham Artes

发明人： Jingjia Ji ,  Zhengrong Shi ,  Yusen Qin ,  Stuart Wenham ,  Graham Artes

IPC分类号： H01L31/18 ,  C25D19/00

CPC分类号： H01L31/022425 ,  C25D5/18 ,  C25D7/12 ,  C25D17/00 ,  C25D17/001 ,  H01L31/18 ,  Y02E10/50

摘要： A method for manufacturing electrodes of solar cell and electrochemical depositing apparatus are disclosed. The method for manufacturing electrodes of solar cell is a method using the process of electrochemical depositing metal or metal alloy to form electrodes of solar cell. The method of the present invention can improve photoelectric conversion efficiency and reduce the production cost. The reaction time of the method is short and industrial waste liquid is treated easily.

摘要翻译： 公开了一种用于制造太阳能电池和电化学沉积设备的电极的方法。 太阳能电池电极的制造方法是使用电化学沉积金属或金属合金来形成太阳能电池的电极的方法。 本发明的方法可以提高光电转换效率并降低生产成本。 该方法的反应时间短，工业废液容易处理。

公开(公告)号：US20100307540A1

公开(公告)日：2010-12-09

申请号：US12669490

申请日：2007-08-23

申请人： Jingjia Ji ,  Zhengrong Shi ,  Yusen Qin

发明人： Jingjia Ji ,  Zhengrong Shi ,  Yusen Qin

IPC分类号： B08B3/00

CPC分类号： H01L21/30604 ,  H01L21/67057 ,  H01L21/67086

摘要： A method for chemically processing a surface of a semiconductor substrate is provided, comprising the steps of: placing a semiconductor substrate above a chemical solution by a shaft and making the lower surface of the semiconductor substrate be at a certain distance from the liquid surface of the chemical solution; and jetting the chemical solution onto the lower surface of the semiconductor substrate by a jet apparatus to perform the chemical processing on the lower surface. A device for the same is also provided, including a chemical tank containing a chemical solution, a shaft for supporting the semiconductor substrate above the chemical solution, and a jet apparatus for jetting the chemical solution onto the lower surface of the semiconductor substrate. The method may perform a chemical treatment on one side of a semiconductor substrate without any protection for the other side.

摘要翻译： 提供一种用于化学处理半导体衬底的表面的方法，包括以下步骤：通过轴将半导体衬底放置在化学溶液上方，并使半导体衬底的下表面距离半导体衬底的液体表面一定距离 化学溶液; 并通过喷射装置将化学溶液喷射到半导体衬底的下表面上，以在下表面上进行化学处理。 还提供了一种用于其的装置，包括含有化学溶液的化学容器，用于在化学溶液上方支撑半导体衬底的轴，以及用于将化学溶液喷射到半导体衬底的下表面上的喷射装置。 该方法可以对半导体衬底的一侧进行化学处理，而不对另一侧进行任何保护。

公开(公告)号：US08298438B2

公开(公告)日：2012-10-30

申请号：US12225382

申请日：2006-05-24

申请人： Jingjia Ji ,  Yusen Qin ,  Zhengrong Shi

发明人： Jingjia Ji ,  Yusen Qin ,  Zhengrong Shi

IPC分类号： C09K13/08

CPC分类号： C09K13/08 ,  H01L31/02363 ,  Y02E10/50

摘要： An acid corrosion solution for preparing polysilicon suede is obtained by mixing with an oxidant and a hydrogen fluoride. The oxidant is a nitrate or nitrite. The method applied of the solution includes putting the polysilicon cut pieces into the acid corrosion solution to carry out the corrosion reaction. The reaction time is about 30 seconds to 20 minutes and the temperature of acid corrosion solution is −10° C. to 25° C.

摘要翻译： 通过与氧化剂和氟化氢混合得到制备多晶硅麂皮的酸腐蚀溶液。 氧化剂是硝酸盐或亚硝酸盐。 应用该方法的方法包括将多晶硅切片放入酸腐蚀溶液中进行腐蚀反应。 反应时间为约30秒至20分钟，酸腐蚀溶液的温度为-10℃至25℃。