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公开(公告)号：US06902458B2
公开(公告)日：2005-06-07
申请号：US10755890
申请日：2004-01-12
申请人： Zhizhang Chen , Michael David Bic , Ronald L. Enck , Michael J. Regan , Thomas Novet , Paul J. Benning
发明人： Zhizhang Chen , Michael David Bic , Ronald L. Enck , Michael J. Regan , Thomas Novet , Paul J. Benning
IPC分类号： G11C13/04 , H01J1/312 , H01J9/02 , H01J19/24 , H01J21/06 , H01J29/04 , H01J31/12 , H01L29/06 , H01J9/04
摘要： An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
摘要翻译： 发射体具有形成在电子供给层上的电子供给层和硅基电介质层。 硅基电介质层优选小于约500埃。 可选地，在电子供给层上形成绝缘体层，并且限定了形成硅基电介质层的开口。 在硅基电介质层上形成阴极层，以提供电子和/或光子能量发射的表面。 优选地，对发射极进行退火处理，从而增加从电子供给层隧穿到阴极层的电子的供应。
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公开(公告)号：US06753544B2
公开(公告)日：2004-06-22
申请号：US09846047
申请日：2001-04-30
申请人： Zhizhang Chen , Michael David Bice , Ronald L. Enck , Michael J. Regan , Thomas Novet , Paul J. Benning
发明人： Zhizhang Chen , Michael David Bice , Ronald L. Enck , Michael J. Regan , Thomas Novet , Paul J. Benning
IPC分类号： H01L2906
摘要： An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
摘要翻译： 发射体具有形成在电子供给层上的电子供给层和硅基电介质层。 硅基电介质层优选小于约500埃。 可选地，在电子供给层上形成绝缘体层，并且限定了形成硅基电介质层的开口。 在硅基电介质层上形成阴极层，以提供电子和/或光子能量发射的表面。 优选地，对发射极进行退火处理，从而增加从电子供给层隧穿到阴极层的电子的供应。
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公开(公告)号：US07044823B2
公开(公告)日：2006-05-16
申请号：US10848695
申请日：2004-05-18
申请人： Zhizhang Chen , Michael J. Regan , Brian E Bolf , Thomas Novet , Paul J. Benning , Mark Alan Johnstone , Sriram Ramamoorthi
发明人： Zhizhang Chen , Michael J. Regan , Brian E Bolf , Thomas Novet , Paul J. Benning , Mark Alan Johnstone , Sriram Ramamoorthi
摘要： An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
摘要翻译： 发射体具有形成在电子供给层上的电子供给层和隧道层。 可选地，在电子供给层上形成绝缘体层，并且在其内形成有形成有隧道层的开口。 在隧道层上形成阴极层，以提供电子和/或光子能量发射的表面。 优选地，对发射极进行退火处理，从而增加从电子供给层隧穿到阴极层的电子的供应。
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公开(公告)号：US06781146B2
公开(公告)日：2004-08-24
申请号：US09846127
申请日：2001-04-30
申请人： Zhizhang Chen , Michael J. Regan , Brian E Bolf , Thomas Novet , Paul J. Benning , Mark Alan Johnstone , Sriram Ramamoorthi
发明人： Zhizhang Chen , Michael J. Regan , Brian E Bolf , Thomas Novet , Paul J. Benning , Mark Alan Johnstone , Sriram Ramamoorthi
IPC分类号： H01L2906
摘要： An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
摘要翻译： 发射体具有形成在电子供给层上的电子供给层和隧道层。 可选地，在电子供应层上形成绝缘体层，并且具有限定在其中形成隧道层的开口。 在隧道层上形成阴极层，以提供电子和/或光子能量发射的表面。 优选地，对发射极进行退火处理，从而增加从电子供给层隧穿到阴极层的电子的供应。
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公开(公告)号：US07049158B2
公开(公告)日：2006-05-23
申请号：US10688731
申请日：2003-10-15
IPC分类号： H01L21/00
摘要： A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is etched to expose the flat cathode emission surface.
摘要翻译： 公开了一种用于产生具有平坦的阴极发射表面的发射体的方法：首先在平坦的阴极发射表面上形成导电的保护层。 然后在保护层上形成电子透镜结构。 最后，蚀刻保护层以暴露平坦的阴极发射表面。
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公开(公告)号：US06703252B2
公开(公告)日：2004-03-09
申请号：US10066149
申请日：2002-01-31
IPC分类号： H01L2166
摘要： A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is etched to expose the flat cathode emission surface.
摘要翻译： 公开了一种用于产生具有平坦的阴极发射表面的发射体的方法：首先在平坦的阴极发射表面上形成导电的保护层。 然后在保护层上形成电子透镜结构。 最后，蚀刻保护层以暴露平坦的阴极发射表面。
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公开(公告)号：US06933517B2
公开(公告)日：2005-08-23
申请号：US10686965
申请日：2003-10-15
摘要： An emitter includes an electron supply and a tunneling layer disposed on the electron supply. A cathode layer is disposed on the tunneling layer. A conductive electrode has multiple layers of conductive material. The multiple layers include a protective layer disposed on the cathode layer. The conductive electrode has been etched to define an opening thereby exposing a portion of the cathode layer.
摘要翻译： 发射极包括电子源和设置在电子源上的隧穿层。 阴极层设置在隧道层上。 导电电极具有多层导电材料。 多层包括设置在阴极层上的保护层。 已经蚀刻导电电极以限定开口，从而暴露阴极层的一部分。
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公开(公告)号：US07045958B2
公开(公告)日：2006-05-16
申请号：US10413048
申请日：2003-04-14
摘要： A vacuum device, including a substrate and a support structure having a support perimeter, where the support structure is disposed over the substrate. In addition, the vacuum device also includes a non-evaporable getter layer having an exposed surface area. The non-evaporable getter layer is disposed over the support structure, and extends beyond the support perimeter, in at least one direction, of the support structure forming a vacuum gap between the substrate and the non-evaporable getter layer increasing the exposed surface area.
摘要翻译： 一种真空装置，包括基底和具有支撑周边的支撑结构，其中所述支撑结构设置在所述基底上。 此外，真空装置还包括具有暴露表面积的不可蒸发的吸气剂层。 不可蒸发的吸气剂层设置在支撑结构上方，并且在支撑结构的至少一个方向上延伸超过支撑周边，所述支撑结构在衬底和非蒸发性吸气剂层之间形成真空间隙，增加暴露的表面积。
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公开(公告)号：US06988924B2
公开(公告)日：2006-01-24
申请号：US10412918
申请日：2003-04-14
CPC分类号： H01J7/183
摘要： A method of manufacturing a getter structure, including forming a support structure having a support perimeter, where the support structure is disposed over a substrate. In addition, the method includes forming a non-evaporable getter layer having an exposed surface area, where the non-evaporable getter layer is disposed over the support structure, and includes forming a vacuum gap between the substrate and the non-evaporable getter layer. The non-evaporable getter layer extends beyond the support perimeter of the support structure increasing the exposed surface area.
摘要翻译： 一种制造吸气剂结构的方法，包括形成具有支撑周长的支撑结构，其中所述支撑结构设置在衬底上。 此外，该方法包括形成具有暴露表面积的不可蒸发的吸气剂层，其中非蒸发性吸气剂层设置在支撑结构上方，并且包括在衬底和非蒸发性吸气剂层之间形成真空间隙。 不可蒸发的吸气剂层延伸超过支撑结构的支撑周边，增加暴露的表面积。
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10.发明授权Vacuum device having non-evaporable getter component with increased exposed surface area 有权具有不可蒸发的吸气剂组分的真空装置具有增加的暴露表面积公开(公告)号：US07608998B2
公开(公告)日：2009-10-27
申请号：US11387222
申请日：2006-03-22
摘要： A vacuum device, including a substrate and a support structure having a support perimeter, where the support structure is disposed over the substrate. In addition, the vacuum device also includes a non-evaporable getter layer having an exposed surface area. The non-evaporable getter layer is disposed over the support structure, and extends beyond the support perimeter, in at least one direction, of the support structure forming a vacuum gap between the substrate and the non-evaporable getter layer increasing the exposed surface area.
摘要翻译： 一种真空装置，包括基底和具有支撑周边的支撑结构，其中所述支撑结构设置在所述基底上。 此外，真空装置还包括具有暴露表面积的不可蒸发的吸气剂层。 不可蒸发的吸气剂层设置在支撑结构上方，并且在支撑结构的至少一个方向上延伸超过支撑周边，所述支撑结构在衬底和非蒸发性吸气剂层之间形成真空间隙，增加暴露的表面积。
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