公开(公告)号：US20190051772A1

公开(公告)日：2019-02-14

申请号：US16157424

申请日：2018-10-11

Applicant: ams AG

Inventor： Jordi Teva ,  Frederic Roger

IPC: H01L31/0224 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/107 ,  H01L31/0368 ,  H01L31/02 ,  H01L31/0248

CPC classification number: H01L31/022408 ,  H01L27/1446 ,  H01L31/02005 ,  H01L31/0224 ,  H01L31/022416 ,  H01L31/0248 ,  H01L31/03529 ,  H01L31/03682 ,  H01L31/107 ,  H01L31/182 ,  Y02E10/50

Abstract: A semiconductor body of a first type of conductivity is formed including a base layer, a first further layer on the base layer and a second further layer on the first further layer. The base layer and the second further layer have an intrinsic doping or a doping concentration that is lower than the doping concentration of the first further layer. A doped region of an opposite second type of conductivity is arranged in the semiconductor body, penetrates the first further layer and extends into the base layer and into the second further layer. Anode and cathode terminals are electrically connected to the first further layer and the doped region, respectively. The doped region can be produced by filling a trench with doped polysilicon.

公开(公告)号：US10128385B2

公开(公告)日：2018-11-13

申请号：US14654470

申请日：2013-12-19

Applicant: ams AG

Inventor： Jordi Teva ,  Frederic Roger

IPC: H01L31/107 ,  H01L31/0224 ,  H01L31/0248 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/02 ,  H01L31/0352

Abstract: A semiconductor body of a first type of conductivity is formed including a base layer, a first further layer on the base layer and a second further layer on the first further layer. The base layer and the second further layer have an intrinsic doping or a doping concentration that is lower than the doping concentration of the first further layer. A doped region of an opposite second type of conductivity is arranged in the semiconductor body, penetrates the first further layer and extends into the base layer and into the second further layer. Anode and cathode terminals are electrically connected to the first further layer and the doped region, respectively. The doped region can be produced by filling a trench with doped polysilicon.

公开(公告)号：US10374114B2

公开(公告)日：2019-08-06

申请号：US14777484

申请日：2014-03-11

Applicant: ams AG

Inventor： Jordi Teva ,  Frederic Roger ,  Ewald Stueckler ,  Stefan Jessenig ,  Rainer Minixhofer ,  Ewald Wachmann ,  Martin Schrems ,  Guenther Koppitsch

IPC: H01L31/107 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0368 ,  H01L31/18

Abstract: The lateral single-photon avalanche diode comprises a semiconductor body comprising a semiconductor material of a first type of electric conductivity, a trench in the semiconductor body, and anode and cathode terminals. A junction region of the first type of electric conductivity is located near the sidewall of the trench, and the electric conductivity is higher in the junction region than at a farther distance from the sidewall. A semiconductor layer of an opposite second type of electric conductivity is arranged at the sidewall of the trench adjacent to the junction region. The anode and cathode terminals are electrically connected with the semiconductor layer and with the junction region, respectively. The junction region may be formed by a sidewall implantation.

公开(公告)号：US20220357204A1

公开(公告)日：2022-11-10

申请号：US17621440

申请日：2020-08-11

Applicant: AMS AG

Inventor： Frederic Roger ,  Troy Chesler

IPC: G01J3/36 ,  G01N21/33 ,  G01N21/31 ,  G01J3/28

Abstract: An apparatus includes an integrated sensor module for detection of chemical substances. The sensor module includes a UV radiation source operable to emit UV radiation onto a sample. The sensor module also includes a sensor including dedicated channels disposed so as receive UV radiation reflected by the sample. Each of the channels is selectively sensitive to a different respective portion of the UV spectrum; collectively, the channels cover at least part of the UV spectrum sufficient for reconstruction of a spectral curve of the sample. An electronic control unit can be used to identify a composition of the sample based on signals from the channels.

公开(公告)号：US20190109254A1

公开(公告)日：2019-04-11

申请号：US16088576

申请日：2017-04-07

Applicant: ams AG

Inventor： Frederic Roger ,  Gerhard Eilmsteiner ,  Eugene G. Dierschke

IPC: H01L31/103 ,  H01L31/0216 ,  H01L31/18

Abstract: A sensor device comprises a semiconductor substrate with a first type of electrical conductivity and with a photodiode structure for detecting incident UV radiation. The photodiode structure comprises a first well arranged within the semiconductor substrate and having a second type of electrical conductivity and a second well arranged at least partially within the first well and having the first type of electrical conductivity. A doping concentration of the first well is greater than a doping concentration of the second well within a surface region at a main surface of the semiconductor substrate. Thereby, a photon capturing layer having the second type of electrical conductivity is formed at the main surface. A p-n junction for detecting the incident UV radiation is formed by a boundary between the second well and the photon capturing layer.

公开(公告)号：US10522696B2

公开(公告)日：2019-12-31

申请号：US16157424

申请日：2018-10-11

Applicant: ams AG

Inventor： Jordi Teva ,  Frederic Roger

IPC: H01L31/0224 ,  H01L31/0248 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/02 ,  H01L31/0352 ,  H01L31/107 ,  H01L27/144

Abstract: A semiconductor body of a first type of conductivity is formed including a base layer, a first further layer on the base layer and a second further layer on the first further layer. The base layer and the second further layer have an intrinsic doping or a doping concentration that is lower than the doping concentration of the first further layer. A doped region of an opposite second type of conductivity is arranged in the semiconductor body, penetrates the first further layer and extends into the base layer and into the second further layer. Anode and cathode terminals are electrically connected to the first further layer and the doped region, respectively. The doped region can be produced by filling a trench with doped polysilicon.