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    Optical sensing device and method for manufacturing an optical sensing device
    1.
    发明授权
    Optical sensing device and method for manufacturing an optical sensing device 有权

    公开(公告)号：US10976200B2

    公开(公告)日：2021-04-13

    申请号：US16651194

    申请日：2018-08-30

    Applicant: ams AG

    Inventor： Hubert Enichlmair ,  Gerhard Eilmsteiner

    IPC: G01J3/02 ,  G01J3/28

    Abstract: An optical sensing device comprises a photodetector array comprising at least one first photodetector and at least one second photodetector, the photodetector array being arranged on a semiconductor substrate. The optical sensing device further comprises a filter stack arranged on the substrate and covering the photodetector array. The filter stack comprises at least two first lower dielectric mirrors and at least two second lower dielectric mirrors, where a first and a second lower mirror are arranged above the first photodetector and a first and a second lower mirror are arranged above the second photodetector, and where the first lower mirrors have a different thickness in vertical direction which is perpendicular to the main plane of extension of the substrate than the second lower mirrors. The filter stack further comprises a spacer stack arranged on the first and second lower mirrors, and an upper dielectric mirror arranged on the spacer stack and covering the photodetector array. Furthermore, a method for manufacturing an optical sensing device is provided.

    Integrated optical sensor and method of producing an integrated optical sensor
    3.
    发明授权
    Integrated optical sensor and method of producing an integrated optical sensor 有权

    公开(公告)号：US10453972B2

    公开(公告)日：2019-10-22

    申请号：US15533989

    申请日：2015-12-04

    Applicant: ams AG

    Inventor： Hubert Enichlmair

    IPC: H01L31/0232 ,  H01L31/0216 ,  H01L27/146 ,  H01L27/144 ,  H01L31/02

    Abstract: An integrated optical sensor comprises a semiconductor substrate (1), an integrated circuit (2), a dielectric layer (6), a wiring (4), a structured filter layer (7) and a diffuser (10). The semiconductor substrate (1) has a main surface (11) and the integrated circuit (2) is arranged in the substrate (1) at or near the main surface (11). Furthermore, the integrated circuit (2) comprises at least one light sensitive component (3). The dielectric layer (6) comprises at least one compound of the semiconductor material. The dielectric layer (6) is arranged on or above the main surface (11). The wiring (4) is arranged in the dielectric layer (6) and provides an electrical connection to the integrated circuit (2), i.e. the wiring is connected to the integrated circuit (2). The structured filter layer (7) is arranged on the dielectric layer (6) and faces the at least one light sensitive component (3), i.e. the diffusor (10) is positioned over the structured filter layer (7). In particular, the structured filter layer (7) is adapted for diffused incident light. The diffuser (10) is arranged on the structured filter layer (7).

    SEMICONDUCTOR DEVICE FOR DETECTION OF RADIATION AND METHOD OF PRODUCING A SEMICONDUCTOR DEVICE FOR DETECTION OF RADIATION
    4.
    发明申请
    SEMICONDUCTOR DEVICE FOR DETECTION OF RADIATION AND METHOD OF PRODUCING A SEMICONDUCTOR DEVICE FOR DETECTION OF RADIATION 审中-公开
    用于检测辐射的半导体器件和用于产生用于检测辐射的半导体器件的方法

    公开(公告)号：US20160020238A1

    公开(公告)日：2016-01-21

    申请号：US14772055

    申请日：2014-02-24

    Applicant: ams AG

    Inventor： Hubert Enichlmair ,  Franz Schrank ,  Joerg Siegert

    IPC: H01L27/146

    CPC classification number: H01L27/14621 ,  H01L23/481 ,  H01L27/14618 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/13024

    Abstract: The semiconductor device for detection of radiation comprises a semiconductor substrate (1) with a main surface (11), a dielectric layer (6) comprising at least one compound of a semiconductor material, an integrated circuit (2) including at least one component sensitive to radiation (3), a wiring (4) of the integrated circuit embedded in an intermetal layer (8) of the dielectric layer (6), an electrically conductive through-substrate via (5) contacting the wiring, and an optical filter element (7) arranged immediately on the dielectric layer above the component sensitive to radiation. The dielectric layer comprises a passivation layer (9) at least above the through-substrate via, the passivation layer comprises a dielectric material that is different from the intermetal layer (8), and the wiring is arranged between the main surface and the passivation layer.

    Abstract translation: 用于检测辐射的半导体器件包括具有主表面（11）的半导体衬底（1），包括至少一种半导体材料的化合物的电介质层（6），包括至少一个组件敏感的集成电路（2） 辐射（3），嵌入电介质层（6）的金属间层（8）中的集成电路的布线（4），与布线接触的导电贯穿基板通孔（5）和光学滤波器元件 （7）立即布置在对辐射敏感的部件上方的电介质层上。 介电层包括至少在贯通基板通孔上方的钝化层（9），钝化层包括不同于金属间层（8）的介电材料，并且布线布置在主表面和钝化层之间 。

    Semiconductor device for detection of radiation and method of producing a semiconductor device for detection of radiation
    5.
    发明授权
    Semiconductor device for detection of radiation and method of producing a semiconductor device for detection of radiation 有权

    公开(公告)号：US11107848B2

    公开(公告)日：2021-08-31

    申请号：US14772055

    申请日：2014-02-24

    Applicant: ams AG

    Inventor： Hubert Enichlmair ,  Franz Schrank ,  Joerg Siegert

    IPC: H01L27/146 ,  H01L23/48

    Abstract: The semiconductor device for detection of radiation comprises a semiconductor substrate (1) with a main surface (11), a dielectric layer (6) comprising at least one compound of a semiconductor material, an integrated circuit (2) including at least one component sensitive to radiation (3), a wiring (4) of the integrated circuit embedded in an intermetal layer (8) of the dielectric layer (6), an electrically conductive through-substrate via (5) contacting the wiring, and an optical filter element (7) arranged immediately on the dielectric layer above the component sensitive to radiation. The dielectric layer comprises a passivation layer (9) at least above the through-substrate via, the passivation layer comprises a dielectric material that is different from the intermetal layer (8), and the wiring is arranged between the main surface and the passivation layer.

    OPTICAL SENSING DEVICE AND METHOD FOR MANUFACTURING AN OPTICAL SENSING DEVICE
    6.
    发明申请
    OPTICAL SENSING DEVICE AND METHOD FOR MANUFACTURING AN OPTICAL SENSING DEVICE 审中-公开

    公开(公告)号：US20200271516A1

    公开(公告)日：2020-08-27

    申请号：US16651194

    申请日：2018-08-30

    Applicant: ams AG

    Inventor： Hubert Enichlmair ,  Gerhard Eilmsteiner

    IPC: G01J3/28 ,  G01J3/02

    Abstract: An optical sensing device comprises a photodetector array comprising at least one first photodetector and at least one second photodetector, the photodetector array being arranged on a semiconductor substrate. The optical sensing device further comprises a filter stack arranged on the substrate and covering the photodetector array. The filter stack comprises at least two first lower dielectric mirrors and at least two second lower dielectric mirrors, where a first and a second lower mirror are arranged above the first photodetector and a first and a second lower mirror are arranged above the second photodetector, and where the first lower mirrors have a different thickness in vertical direction which is perpendicular to the main plane of extension of the substrate than the second lower mirrors. The filter stack further comprises a spacer stack arranged on the first and second lower mirrors, and an upper dielectric mirror arranged on the spacer stack and covering the photodetector array. Furthermore, a method for manufacturing an optical sensing device is provided.

    3D-INTEGRATED OPTICAL SENSOR AND METHOD OF PRODUCING A 3D-INTEGRATED OPTICAL SENSOR
    7.
    发明申请
    3D-INTEGRATED OPTICAL SENSOR AND METHOD OF PRODUCING A 3D-INTEGRATED OPTICAL SENSOR 审中-公开

    公开(公告)号：US20190237500A1

    公开(公告)日：2019-08-01

    申请号：US16312145

    申请日：2017-06-02

    Applicant: ams AG

    Inventor： Hubert Enichlmair ,  Martin SCHREMS ,  Gregor Toschkoff ,  Thomas Bodner ,  Mario Manninger

    IPC: H01L27/146

    CPC classification number: H01L27/14621 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14685

    Abstract: A 3D-Integrated optical sensor comprises a semiconductor substrate, an integrated circuit, a wiring, a filter layer, a transparent spacer layer, and an on-chip diffuser. The semiconductor substrate has a main surface. The integrated circuit comprises at least one light sensitive area and is arranged in the substrate at or near the main surface. The wiring provides an electrical connection to the integrated circuit and is connected to the integrated circuit. The wiring is arranged on or in the semiconductor substrate. The filter layer has a direction dependent transmission characteristic and is arranged on the integrated circuit. In fact, the filter layer at least covers the light sensitive area. The transparent spacer layer is arranged on the main surface and, at least partly, encloses the filter layer. A spacer thickness is arranged to limit a spectral shift of the filter layer. The on-chip diffuser is arranged on the transparent spacer layer.

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