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公开(公告)号:US10106399B1
公开(公告)日:2018-10-23
申请号:US15787532
申请日:2017-10-18
Applicant: mCube, Inc.
Inventor: Chien Chen Lee , Tzu Feng Chang
IPC: B81C1/00
Abstract: A method for fabricating a WLCSP device includes receiving a MEMS cap wafer having a first radius, a MEMS device wafer having a second radius, and a CMOS substrate wafer having a third radius, wherein the first radius is smaller than the second radius, and wherein the second radius is smaller than the third radius, disposing the MEMS cap wafer approximately concentrically upon the MEMS device wafer, disposing the MEMS device wafer approximately concentrically upon the CMOS substrate wafer, disposing a spacer structure upon the MEMS device wafer, wherein the spacer structure comprises a plurality of proximity spacers disposed upon a proximity flag, wherein the plurality of proximity spacers are disposed upon the MEMS device wafer, disposing a mask layer in contact to the plurality of proximity spacers, above and substantially parallel to the MEMS cap wafer, and forming a pattern upon the MEMS cap wafer using the mask layer.
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公开(公告)号:US09975759B2
公开(公告)日:2018-05-22
申请号:US15647107
申请日:2017-07-11
Applicant: mCube, Inc.
Inventor: Chien Chen Lee , Tzu Feng Chang
IPC: H01L29/66 , B81B7/00 , B81C1/00 , G01P15/08 , G01R33/02 , G01C19/5783 , G01L1/00 , B81B3/00 , G01L9/00 , G01C19/5719
CPC classification number: B81B7/0074 , B81B3/0035 , B81B3/0062 , B81B3/0072 , B81B7/0032 , B81B7/0045 , B81B7/0048 , B81B7/0051 , B81B7/0054 , B81B7/0077 , B81B2201/0235 , B81B2201/0242 , B81B2201/025 , B81B2201/0264 , B81B2207/012 , B81C1/00134 , B81C1/00158 , B81C1/0023 , B81C1/00261 , B81C1/00269 , B81C2203/0792 , G01C19/5719 , G01C19/5783 , G01L1/00 , G01L9/0042 , G01L19/0069 , G01L19/147 , G01P15/0802 , G01R33/02 , H04R2201/003
Abstract: A method and structure for a PLCSP (Package Level Chip Scale Package) MEMS package. The method includes providing a MEMS chip having a CMOS substrate and a MEMS cap housing at least a MEMS device disposed upon the CMOS substrate. The MEMS chip is flipped and oriented on a packaging substrate such that the MEMS cap is disposed above a thinner region of the packaging substrate and the CMOS substrate is bonding to the packaging substrate at a thicker region, wherein bonding regions on each of the substrates are coupled. The device is sawed to form a package-level chip scale MEMS package.
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