摘要:
A time-resolved photoemission electron microscopy including: a laser light source that outputs a pulse having less than or equal to a femtosecond level pulse width and variable repetition frequency; a pump light pulse generator configured to generate pump light pulse that excites photo-carriers of a sample by converting wavelength of light output from the laser light source; and a probe light pulse generator configured to generate probe light pulse that photo-emits photo-carriers excited by the pump light pulse from the sample by photoelectric effect by converting wavelength of light output from the laser light source. The energy of at least one of the pump light pulse and the probe light pulse is configured to continuously vary in a range not less than 0.1 eV and not more than 8 eV.
摘要:
The present invention separates radiation from an object by a polarization filter 3 into polarized light beams, causes one of the beams to enter a spectrum analyzer 7 through a first optical path, causes the other to enter the spectrum analyzer 7 through a second optical path, and measures the two-color ratio, while causes radiation of a blackbody 2 placed in a vacuum ultralow temperature thermostatic chamber 1 in a quasi-thermal equilibrium state at an ultralow temperature in vacuo to enter the polarization filter 3 through a third optical path, separates the radiation into polarized light beams, causes the beams to each enter the same optical paths as the respective optical paths for the radiation of the object, causes the beams to enter the spectrum analyzer 7, measures the two-color ratio, and accurately obtains the temperature of the object on the basis of these two two-color ratios.
摘要:
There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed.
摘要:
ProblemThere is proposed an innovative cross-sectional structure, with an idea contrary to the conventional one, utilizing the non-reactivity between Cu and Ta (or between Ag and Nb, Ta) in a high-temperature short-time heat treatment, thus achieving (1) the suppression of the low magnetic-field instability, (2) excellent wire drawability of a precursor wire, and (3) the reduction of the cost required for the incorporation of a stabilizer.Means for ResolutionThere is proposed a structure having an assembly of a plurality of single wires, wherein the assembly is covered with an outer cover (skin) formed from Nb or Ta, wherein each of the single wires has an Nb/Al composite filament region which is formed from a composite of Nb and Al mixed in an Nb:Al molar ratio of 3:1, and which is covered with a partition formed from Nb or Ta, and further covered with an interfilamentary barrier formed from Cu or Ag disposed around the partition.
摘要:
A method for synthesizing a radioactive technetium-99m-containing substance and a synthesizing device are provided. The method for synthesizing a radioactive technetium-99m-containing substance has a step for generating negative muons and a step for irradiating the negative muons onto a ruthenium sample. The ruthenium material preferably includes a metallic ruthenium and/or a ruthenium compound. Also, the ruthenium sample preferably has a plurality of superimposed ruthenium thin plates having a thickness of 4 mm or less.
摘要:
The present invention provides a target capable of reducing radioactivation of a member due to protons. The present invention uses a novel target configured by compositing a beryllium material or a lithium material and a carbon-series material for reducing the radioactivation of the member due to the protons.
摘要:
To provide a manufacturing method of a superconducting radio-frequency acceleration cavity used in a charged particle accelerator enabling the manufacturing with few waste amounts of the niobium material at low cost in a short time, the manufacturing method has each of the steps of (a) obtaining an ingot made from a disk-shaped niobium material, (b) slicing and cutting the niobium ingot into a plurality of niobium plates each with a predetermined thickness, by vibrating multiple wires back and forth while spraying fine floating abrasive grains with the niobium ingot supported, (c) removing the floating abrasive grains adhered to the sliced niobium plates, and (d) performing deep draw forming on the niobium plates and thereby obtaining a niobium cell of a desired shape.
摘要:
Provided are: a non-evaporable getter coated component and chamber including a non-evaporable getter material layer with a total storage capacity of carbon atoms, nitrogen atoms and oxygen atoms of 20 mol % or less and/or a noble metal layer with a total storage capacity of carbon atoms, nitrogen atoms and oxygen atoms of 20 mol % or less; a manufacturing method of a non-evaporable getter coated component and chamber, the method including a step of forming a non-evaporable getter material layer and/or a noble metal layer by coating a non-evaporable getter material and/or a noble metal by a vapor deposition method under low pressure; and a manufacturing apparatus of a NEG coated component and chamber including a NEG material filament and/or a noble metal filament and a current feedthrough.
摘要:
The present invention provides a radiation-damage-compensation-circuit and a SOI-MOSFET that has high radiation resistance. The SOI-MOSFET has the radiation-damage-compensation-circuit to recover the characteristics of the SOI-MOSFET after X-ray irradiation.
摘要:
It has been very difficult to accumulate strong laser in the conventional optical resonator, because firstly it has been very difficult to control a resonator length less than 1 Å in resonation position which is required for the laser amplification more than 1,000 times and secondly, the conventional method has utilized laser strength of amplified laser in the optical resonator as the resonance control signal.The present invention provides an optical resonator system to accumulate strong laser. In the system, unamplified modulation wave or harmonic which are derived from oscillation laser are selectively used to tune a resonator length of the optical resonator.