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1.发明授权公开(公告)号：US10663288B2
公开(公告)日：2020-05-26
申请号：US16274345
申请日：2019-02-13
发明人： Kazuhiko Tahara
摘要： A shape measuring apparatus of the present invention measures a variation in a thickness of an object to be measured WA based on an A surface reference interference light and an A surface measuring interference light obtained by performing optical heterodyne interference on a first A surface measuring light and a second A surface measuring light and a B surface reference interference light and a B surface measuring interference light obtained by performing the optical heterodyne interference on a first B surface measuring light and a second B surface measuring light. When the optical heterodyne interference is performed, the shape measuring apparatus makes the first A surface measuring light and the second B surface measuring light equal in frequency and makes the first B surface measuring light and the second A surface measuring light equal in frequency.
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公开(公告)号：US20190293407A1
公开(公告)日：2019-09-26
申请号：US16274345
申请日：2019-02-13
发明人： Kazuhiko TAHARA
摘要： A shape measuring apparatus of the present invention measures a variation in a thickness of an object to be measured WA based on an A surface reference interference light and an A surface measuring interference light obtained by performing optical heterodyne interference on a first A surface measuring light and a second A surface measuring light and a B surface reference interference light and a B surface measuring interference light obtained by performing the optical heterodyne interference on a first B surface measuring light and a second B surface measuring light. When the optical heterodyne interference is performed, the shape measuring apparatus makes the first A surface measuring light and the second B surface measuring light equal in frequency and makes the first B surface measuring light and the second A surface measuring light equal in frequency.
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公开(公告)号：US20190177230A1
公开(公告)日：2019-06-13
申请号：US16092400
申请日：2017-02-09
发明人： Yuki TAO , Yasuo NAKANE , Hideo HATA
IPC分类号： C04B35/453 , C23C14/34
摘要： Disclosed is an oxide sintered body, wherein contents of zinc, indium, gallium and tin relative to all metal elements satisfy the following inequality expressions: 40 atomic %≤[Zn]≤55 atomic %, 20 atomic %≤[In]≤40 atomic %, 5 atomic %≤[Ga]≤15 atomic %, and 5 atomic %≤[Sn]≤20 atomic %, where the contents (atomic %) of zinc, indium, gallium and tin relative to all metal elements excluding oxygen are respectively taken as [Zn], [In], [Ga] and [Sn], wherein the oxide sintered body has a relative density of 95% or more, and wherein the oxide sintered body includes, as a crystal phase, 5 to 20 volume % of InGaZn2 O5.
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公开(公告)号：US10090136B2
公开(公告)日：2018-10-02
申请号：US14427719
申请日：2013-09-10
发明人： Yuki Tao , Hideo Hata , Akira Nambu , Moriyoshi Kanamaru
IPC分类号： H01J37/34 , C23C14/08 , C23C14/34 , C04B35/457 , C04B35/01 , C04B35/453 , C04B35/64 , H01L21/02
摘要： An oxide sintered body which is obtained by mixing and sintering zinc oxide, indium oxide, gallium oxide and tin oxide. The relative density of the oxide sintered body is 85% or more and the average grain size of crystal grains observed on the surface of the oxide sintered body is less than 10 μm. X-ray diffraction of the oxide sintered body shows that a Zn2SnO4 phase and an InGaZnO4 phase are the main phases and that an InGaZn2O5 phase is contained in an amount of 3 volume % or less.
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公开(公告)号：US09551065B2
公开(公告)日：2017-01-24
申请号：US13981414
申请日：2011-12-20
CPC分类号： C23C14/3407 , C22C1/02 , C22C9/00 , C22C21/00 , C23C14/3414
摘要： Film-formation rate can be increased in the pre-sputtering and in the subsequent sputtering onto a substrate or the like, and sputtering failures such as splashes can be inhibited, by making an Al-based alloy or Cu-based alloy spurting target fulfill the following requirements (1) and/or (2) when the total area ratio of crystal orientations ±15°, ±15°, ±15°, ±15°, and ±15° in the sputtering surface normal direction in the depth within 1 mm from the uppermost surface of the sputtering target is referred to as a P value: (1) the area ratio PA of ±15° to the P value: 40% or lower; and (2) the total area ratio PB of ±15° and ±15° to the P value: 20% or higher.
摘要翻译： 可以在预溅射和随后的溅射中将成膜速度提高到基板等上，并且通过使Al基合金或Cu基合金喷涂靶达到 晶体取向的总面积比<001>±15°，<011>±15°，<111>±15°，<112>±15°和<012时的以下要求（1）和/或（2） 在溅射靶的最上表面1mm以内的深度的溅射面法线方向>±15°被称为P值：（1）<011>±15°的面积比PA与P值 ：40％以下; 和（2）总面积比PB <001>±15°和<111>±15°至P值：20％或更高。
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公开(公告)号：US09175380B2
公开(公告)日：2015-11-03
申请号：US13981729
申请日：2012-02-09
申请人： Moriyoshi Kanamaru , Yuki Iwasaki , Minoru Matsui , Hiroshi Goto , Akira Nambu
发明人： Moriyoshi Kanamaru , Yuki Iwasaki , Minoru Matsui , Hiroshi Goto , Akira Nambu
IPC分类号： C25B11/00 , C25B13/00 , C23C14/34 , C04B35/01 , C04B35/453 , C04B35/457 , C23C14/08
CPC分类号： C23C14/3414 , C04B35/01 , C04B35/453 , C04B35/457 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C23C14/086
摘要： Provided is an oxide sintered body suitably used for producing an oxide semiconductor film for a display device, the oxide sintered body capable of forming an oxide semiconductor film exerting excellent conductivity, having high relative density and excellent in-plane uniformity, and exhibiting high carrier mobility. This oxide sintered body is obtained by combining and sintering a zinc oxide powder, a tin oxide powder, and an indium oxide powder. The oxide sintered body satisfies the following equation (1) when the oxide sintered body is subjected to X-ray diffraction, Equation (1): [A/(A+B+C+D)]×100≧70. In equation (1), A represents the XRD peak intensity in the vicinity of 2θ=34°, B represents the XRD peak intensity in the vicinity of 2θ=31°, C represents the XRD peak intensity in the vicinity of 2θ=35°, and D represents the XRD peak intensity in the vicinity of 2θ=26.5°.
摘要翻译： 本发明提供一种适合用于制造显示装置用氧化物半导体膜的氧化物烧结体，能够形成氧化物半导体膜的氧化物烧结体，具有优异的导电性，相对密度高，面内均匀性优异，载流子迁移率高 。 该氧化物烧结体通过组合并烧结氧化锌粉末，氧化锡粉末和氧化铟粉末而获得。 当氧化物烧结体进行X射线衍射时，氧化物烧结体满足下列等式（1）：等式（1）：[A /（A + B + C + D）]×100≥70。 在等式（1）中，A表示2附近的XRD峰强度; = 34°，B表示2附近的XRD峰强度; = 31°，C表示2附近的XRD峰强度; = 35°，D表示2θ附近的XRD峰强度= 26.5°。
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7.再颁专利Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices 有权电极及其半导体器件的制造方法以及用于形成用于半导体器件的电极膜的溅射靶公开(公告)号：USRE44239E1
公开(公告)日：2013-05-28
申请号：US11430299
申请日：2006-05-09
IPC分类号： C23C14/34
CPC分类号： H01L21/2855 , H01L23/53219 , H01L2924/0002 , Y10T428/12736 , H01L2924/00
摘要： Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150 to 400° C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 μΩcm is obtained. The target is made of an Al alloy containing the above elements.
摘要翻译： 公开了一种能够抑制小丘的产生和降低电阻率的半导体器件用电极，其适用于使用薄膜晶体管的有源矩阵液晶显示器等; 其制作方法; 以及用于形成半导体器件用电极膜的溅射靶。 用于半导体器件的电极由含有一种或多种选自Fe，Co，Ni，Ru，Rh和Ir的合金元素的Al合金制成，总量为0.1至10原子％，或选择一种或多种合金元素 来自稀土元素，总量为0.05〜15原子％。 制造半导体器件的电极的方法包括以下步骤：在基底上沉积上述元素溶解在Al基体中的Al合金膜; 并且通过在150-400℃的退火温度下退火Al合金膜，将溶解在Al基体中的所有元素的一部分沉淀为金属间化合物; 由此获得由电阻率小于20μOmegacm的Al合金膜制成的半导体器件用电极。 目标由含有上述元素的Al合金制成。
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公开(公告)号：US20120203473A1
公开(公告)日：2012-08-09
申请号：US13500305
申请日：2010-10-01
申请人： Kazushi Hayashi , Hiroyuki Takamatsu , Yoshito Fukumoto , Naokazu Sakoda , Masahiro Inui , Shingo Sumie
发明人： Kazushi Hayashi , Hiroyuki Takamatsu , Yoshito Fukumoto , Naokazu Sakoda , Masahiro Inui , Shingo Sumie
CPC分类号： G01N21/3151 , G01N21/31 , G01N2021/3568 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor carrier lifetime measuring apparatus A1 of the present invention, at least two types of light having mutually different wavelengths are irradiated onto a semiconductor X to be measured, a predetermined measurement wave is irradiated onto the semiconductor X to be measured, a reflected wave of the measurement wave that has been reflected by the semiconductor X to be measured or a transmitted wave of the measurement wave that has transmitted through the semiconductor X to be measured is detected, and the carrier lifetime in the semiconductor X to be measured is obtained based on the detection results so as to minimize the error. Accordingly, the semiconductor carrier lifetime measuring apparatus A1 configured as described above can more accurately measure the carrier lifetime.
摘要翻译： 在本发明的半导体载体寿命测量装置A1中，将具有相互不同波长的至少两种类型的光照射到要测量的半导体X上，将预定测量波照射到要测量的半导体X上，反射波 检测被测半导体X所反射的测量波，或检测通过半导体X的被测量的测定波的透过波，测定半导体X的载流子寿命， 检测结果，以最小化误差。 因此，如上所述构成的半导体载体寿命测定装置A1能够更准确地测定载流子寿命。
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公开(公告)号：US08228509B2
公开(公告)日：2012-07-24
申请号：US12745546
申请日：2008-12-02
IPC分类号： G01B11/00
CPC分类号： G01B11/24
摘要： A shape measuring device including a light projecting device for projecting a light flux to a measurement portion, and image pickup device for picking up a projection image of the measurement portion. The light projecting device includes a collimator lens having outgoing light of a point light source pass and collimating the same in a light projection direction and one or more apertures shielding passage of light in a range outside an image pickup range or passage of light in a range inside the image pickup range and outside a boundary located in a range outside a projection image of a measurement portion. Moreover, a parallel supporting portion for supporting a face of the measurement target in parallel with the light projection direction at a position on the center side with respect to the measurement portion in the measurement target supported by a center sucking and supporting mechanism is provided.
摘要翻译： 一种形状测量装置，包括用于将光束投射到测量部分的投光装置，以及用于拾取测量部分的投影图像的图像拾取装置。 该投光装置包括：准直透镜，其具有点光源的出射光，并沿光投射方向准直;以及一个或多个孔，遮光光线的范围在摄像范围之外的范围内，或光的通过范围 在图像拾取范围内并且位于测量部分的投影图像之外的范围内的边界之外。 此外，还提供一种平行的支撑部分，用于在由中心吸引和支撑机构支撑的测量对象中的相对于测量部分的中心侧的位置处与光投射方向平行地支撑测量对象的面。
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公开(公告)号：US20120045360A1
公开(公告)日：2012-02-23
申请号：US13263992
申请日：2010-04-14
申请人： Hiromi Matsumura , Akira Nanbu , Masaya Ehira , Shinya Okamoto
发明人： Hiromi Matsumura , Akira Nanbu , Masaya Ehira , Shinya Okamoto
CPC分类号： C23C14/3414 , B22F2998/10 , C22C1/0425 , C22C9/00 , B22F9/082 , C23C14/34 , B22F3/15
摘要： Disclosed is a Cu—Ga alloy sputtering target which enables the formation of a Cu—Ga sputtering film having excellent uniformity in film component composition (film uniformity), enables the reduction of occurrence of arcing during sputtering, has high strength, and rarely undergoes cracking during sputtering. Specifically disclosed is a Cu—Ga alloy sputtering target which comprises a Cu-based alloy containing Ga, has an average crystal particle diameter of 10 μm or less, and has a porosity of 0.1% or less.
摘要翻译： 公开了一种Cu-Ga合金溅射靶，其能够形成具有优异的膜组分组成（膜均匀性）的Cu-Ga溅射膜，能够减少溅射期间电弧的发生，具有高强度，并且很少发生裂纹 在溅射期间。 具体公开了包含含有Ga的Cu基合金的Cu-Ga合金溅射靶，其平均结晶粒径为10μm以下，孔隙率为0.1％以下。
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