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公开(公告)号：US20240322076A1
公开(公告)日：2024-09-26
申请号：US18613655
申请日：2024-03-22
申请人： NIKKISO CO., LTD.
发明人： Cyril PERNOT , Yusuke MATSUKURA , Kazufumi TAKAO
CPC分类号： H01L33/145 , H01L33/06 , H01L33/32
摘要： A nitride semiconductor light-emitting element includes an n-type semiconductor layer, an active layer that is formed on one side of the n-type semiconductor layer and includes a well layer and a barrier layer, an electron blocking layer that is formed on the active layer on an opposite side to the n-type semiconductor layer, and a p-type semiconductor layer formed on the electron blocking layer on an opposite side to the active layer. The electron blocking layer includes a plurality of semiconductor layers that are undoped. Among the plurality of semiconductor layers constituting the electron blocking layer, a first electron blocking layer located closest to the active layer has a higher Al composition ratio than that of the other semiconductor layers constituting the electron blocking layer and that of the barrier layer. A film thickness of the first electron blocking layer is less than 2 nm.
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公开(公告)号：US12057525B2
公开(公告)日：2024-08-06
申请号：US17510481
申请日：2021-10-26
申请人： NIKKISO CO., LTD.
发明人： Yusuke Matsukura , Cyril Pernot
CPC分类号： H01L33/325 , H01L33/0075 , H01L33/025 , H01L33/145
摘要： A nitride semiconductor light-emitting element includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer, and an electron blocking layer comprising at least one layer. The at least one layer of the electron blocking layer includes a peak-containing layer having an n-type impurity concentration peak in an n-type impurity concentration distribution along a stacking direction. The n-type impurity concentration peak appears as a local maximum in the n-type impurity concentration distribution along the stacking direction in the peak-containing layer and has an n-type impurity concentration of not less than 10 times a smallest value of the n-type impurity concentration in a region along the stacking direction between positions that are separated from a position of the peak in the stacking direction on both sides in the stacking direction by 10% of a thickness of the peak-containing layer.
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公开(公告)号：US12053564B2
公开(公告)日：2024-08-06
申请号：US17269819
申请日：2019-08-27
申请人： NIKKISO CO., LTD.
IPC分类号： A61M1/16 , A61M1/14 , A61M1/36 , A61M60/113 , A61M60/279 , A61M60/37 , A61M60/847
CPC分类号： A61M1/1696 , A61M1/15632 , A61M1/3621 , A61M1/362227 , A61M1/36225 , A61M60/113 , A61M60/279 , A61M60/37 , A61M60/847 , A61M1/155 , A61M1/1562 , A61M2205/126 , A61M2205/702
摘要： A lid that retains a pump tube which is elastic; a finger driving unit that is disposed facing the lid with the pump tube interposed therebetween, and that causes a plurality of fingers to sequentially move in the direction of contacting and separating from the lid; and a pump tube opening/closing mechanism that causes the finger driving unit to advance towards and retract from the lid, and that closes and opens the pump tube which is disposed between the fingers and the lid.
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公开(公告)号：US12048787B2
公开(公告)日：2024-07-30
申请号：US17417229
申请日：2019-12-06
申请人： NIKKISO CO., LTD.
CPC分类号： A61L9/205 , B64D11/0626 , B64D13/06 , F24F7/003 , A61L2209/111 , A61L2209/12 , A61L2209/14 , B64D2013/0651
摘要： An infection preventing device includes air barrier forming units that include an air inlet for taking in air from a rear in a front-rear direction, an air purification mechanism for creating clean air by purifying the air taken in from the air inlet, and an air outlet for blowing the clean air toward the front in the front-rear direction, and are capable of blowing out the clean air from the air outlet in the form of layer perpendicular to the left-right direction. The air barrier forming units provided on the seats adjacent in the front-rear direction face in the front-rear direction, and it is configured that air including clean air blown out of the air outlet of the rear air barrier forming unit can be taken in by the air inlet of the front air barrier forming unit.
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公开(公告)号：US20240245842A1
公开(公告)日：2024-07-25
申请号：US18562401
申请日：2022-03-22
申请人： NIKKISO CO., LTD.
发明人： Kazuya TSUJI , Takuya MAEDA , Hikaru CHIAKI
IPC分类号： A61M1/30 , A61M60/109 , A61M60/216 , A61M60/408 , A61M60/508
CPC分类号： A61M1/30 , A61M60/109 , A61M60/216 , A61M60/408 , A61M60/508 , A61M2205/3331
摘要： In draining liquid in an AV-coupling-type blood circuit, it is determined that the blood circuit is in an AV-coupled state. A blood purification apparatus can switch between an open state in which fluid can flow through a blood removal side circuit and a blood return side circuit and a closed state in which the fluid cannot flow therethrough. The apparatus generates a difference in pressure between the blood removal side circuit and the blood return side circuit by rotating a blood pump in the case of the closed state. The apparatus then determines whether the blood circuit is the closed circuit by switching to the open state and monitoring the difference in pressure from detecting pressure inside the blood circuit. The apparatus drains liquid remaining in the blood circuit to a predetermined drainage destination with the blood circuit forming the closed circuit.
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公开(公告)号：US20240213402A1
公开(公告)日：2024-06-27
申请号：US18545444
申请日：2023-12-19
申请人： NIKKISO CO., LTD.
发明人： Kazufumi TAKAO , Yusuke MATSUKURA , Cyril PERNOT
CPC分类号： H01L33/06 , H01L33/0075
摘要： Manufacturing a nitride semiconductor light-emitting device includes a depositing an n-type cladding layer and an active layer with a multi-quantum well structure having a plurality of well layers on a substrate in a chamber. In depositing the active layer, a silicon source is not supplied into the chamber. The method includes supplying the silicon source into the chamber after depositing the n-type cladding layer and before depositing the active layer thereby, when a well layer located second from the n-type cladding layer side among the plurality of well layers is defined as a second well layer, a peak of distribution of a silicon concentration in a stacking direction of the n-type cladding layer and the active layer appears in a range where the second well layer is formed, and the silicon concentration at an apex of the peak is not less than 1.49×1018 atoms/cm3 and not more than 4.96×1018 atoms/cm3.
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公开(公告)号：US20240174965A1
公开(公告)日：2024-05-30
申请号：US18431552
申请日：2024-02-02
申请人： NIKKISO CO., LTD.
发明人： Fumihiko KITAGAWA , Yoichi JIMBO , Yosuke WATANABE
摘要： A culture device includes: a culture vessel that contains an aggregate of cells and a culture medium; a suction tube that suctions the culture medium in the culture vessel; a suction unit that generates suction force in the suction tube; and a control unit that controls the suction unit based on an antagonistic suction flow velocity of the aggregate, which is a velocity at which sedimentation of the aggregate is antagonistic to floating of the aggregate due to the suction of the culture medium.
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公开(公告)号：US11961942B2
公开(公告)日：2024-04-16
申请号：US18188261
申请日：2023-03-22
申请人： NIKKISO CO., LTD.
发明人： Noritaka Niwa , Tetsuhiko Inazu
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/14 , H01L33/382 , H01L2933/0016
摘要： The semiconductor light-emitting element includes an n-type semiconductor layer; an active layer on the n-type semiconductor layer; a p-type semiconductor layer on the active layer; a p-side contact electrode in contact with the p-type semiconductor layer; a p-side current diffusion layer on the p-side contact electrode; an n-side contact electrode in contact with the n-type semiconductor layer; and an n-side current diffusion layer that includes a first current diffusion layer on the n-side contact electrode, and a second current diffusion layer on the first current diffusion layer, and including a TiN layer. A height difference between upper surfaces of the p-side contact electrode and the first current diffusion layer is 100 nm or smaller; and a height difference between upper surfaces of the p-side current diffusion layer and the second current diffusion layer is 100 nm or smaller.
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公开(公告)号：US20240110157A1
公开(公告)日：2024-04-04
申请号：US18535328
申请日：2023-12-11
IPC分类号： C12N5/071
CPC分类号： C12N5/0686 , C12N2523/00
摘要： There are provided a cell aggregate that can be used as a cell preparation in regenerative medicine, maintains the original characteristics of cells, and has high safety, and a method for simply and safely maintaining the cell aggregate size, the cell characteristics and viability suitable for use as a cell preparation in regenerative medicine. According to an aspect of the present invention, a cell aggregate maintaining method is a method including a maintenance process of maintaining a liquid containing a plurality of the cell aggregates at a temperature which is lower than a culture temperature of the cells and at which the liquid is not frozen.
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公开(公告)号：US20240079538A1
公开(公告)日：2024-03-07
申请号：US18455755
申请日：2023-08-25
申请人： NIKKISO CO., LTD.
发明人： Kazuyoshi SAKURAGI
IPC分类号： H01L33/58
CPC分类号： H01L33/58 , H01L2933/0058
摘要： A light-emitting device 1 includes a semiconductor light-emitting element 2 emitting ultraviolet light, a first substrate 5 on which the semiconductor light-emitting element 2 is mounted, a second substrate 6 which is arranged on a side of the first substrate 5 opposite to the semiconductor light-emitting element 2 and on which the first substrate 5 is mounted, and an optical member 7 adhered using a resin adhesive 8 to a surface 61 of the second substrate 6 on the first substrate 5 side.
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