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    Calibrating multiple photoelectron spectroscopy systems
    1.
    发明授权
    Calibrating multiple photoelectron spectroscopy systems 失效
    校准多个光电子能谱系统

    公开(公告)号：US07456399B1

    公开(公告)日：2008-11-25

    申请号：US11395189

    申请日：2006-03-30

    申请人： Eric J. Soderstrom

    发明人： Eric J. Soderstrom

    IPC分类号： H01J40/00 ,  H01J47/00

    CPC分类号： G01N23/223 ,  G01N2223/076 ,  G01N2223/61 ,  G01N2223/633

    摘要： A method comprising obtaining a first set of spectral data for a first sample film measured by a first system, extracting intensities for one or more elemental species associated with the first sample film to provide a first set of extracted intensities using a function, and determining a first quantitative characteristic associated with the first sample film using the first set of extracted intensities. Next, obtain a second set of spectral data measured for a comparable sample film measured by a second photoelectron spectroscopy system. Next, apply the same function and continually adjust the function to extract intensities for the respective elemental species associated with the comparable sample film to provide a second set of corrected-extracted intensities. A second quantitative characteristic for the comparable sample is determined. The function is continually adjusted until the determined second quantitative characteristic closely or substantially matches the first quantitative characteristic.

    摘要翻译： 一种方法，包括获得由第一系统测量的第一样品膜的第一组光谱数据，提取与第一样品膜相关联的一个或多个元素物质的强度，以使用函数提供第一组提取的强度，并且确定 使用第一组提取的强度与第一样品膜相关联的第一定量特征。 接下来，获得通过第二光电子能谱系统测量的可比样品膜测量的第二组光谱数据。 接下来，应用相同的功能并连续地调整功能以提取与可比样品膜相关联的各个元素的强度，以提供第二组校正提取的强度。 确定可比样品的第二个定量特征。 该功能被连续地调整直到所确定的第二定量特征与第一定量特征密切或基本匹配。

    Silicon germanium thickness and composition determination using combined XPS and XRF technologies
    2.
    发明授权
    Silicon germanium thickness and composition determination using combined XPS and XRF technologies 有权
    使用组合的XPS和XRF技术的硅锗厚度和组成测定

    公开(公告)号：US09594035B2

    公开(公告)日：2017-03-14

    申请号：US14691164

    申请日：2015-04-20

    申请人： Heath A. Pois ,  Wei Ti Lee

    发明人： Heath A. Pois ,  Wei Ti Lee

    IPC分类号： G01N23/22 ,  G01B15/02 ,  G01N23/223 ,  G01N23/227

    CPC分类号： G01N23/2206 ,  G01B15/02 ,  G01N23/2208 ,  G01N23/223 ,  G01N23/2273 ,  G01N2223/61 ,  G01N2223/6116

    摘要： Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both.

    摘要翻译： 描述了使用组合XPS和XRF技术的硅锗厚度和成分测定的系统和方法。 在一个示例中，用于表征硅锗膜的方法包括产生X射线束。 样品位于所述X射线束的通路中。 收集通过用所述X射线束轰击所述样品产生的X射线光电子能谱（XPS）信号。 还收集通过用所述X射线束轰击所述样品而产生的X射线荧光（XRF）信号。 硅锗膜的厚度或组成或两者均由XRF信号或XPS信号或两者确定。

    System and method for characterizing a film by X-ray photoelectron and low-energy X-ray fluorescence spectroscopy
    3.
    发明授权
    System and method for characterizing a film by X-ray photoelectron and low-energy X-ray fluorescence spectroscopy 有权
    通过X射线光电子和低能X射线荧光光谱表征膜的系统和方法

    公开(公告)号：US09240254B2

    公开(公告)日：2016-01-19

    申请号：US13246488

    申请日：2011-09-27

    申请人： Bruno W. Schueler ,  David A. Reed ,  Jeffrey Thomas Fanton ,  Rodney Smedt

    发明人： Bruno W. Schueler ,  David A. Reed ,  Jeffrey Thomas Fanton ,  Rodney Smedt

    IPC分类号： G01N23/223 ,  G21K1/00 ,  G21K1/06 ,  G01N23/227

    CPC分类号： G21K1/06 ,  G01N23/223 ,  G01N23/2273 ,  G01N2223/61 ,  G21K2201/062 ,  G21K2201/064

    摘要： Systems and methods for characterizing films by X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a system for characterizing a film may include an X-ray source for generating an X-ray beam having an energy below the k-edge of silicon. A sample holder may be included for positioning a sample in a pathway of the X-ray beam. A first detector may be included for collecting an XPS signal generated by bombarding the sample with the X-ray beam. A second detector may be included for collecting an X-ray fluorescence (XRF) signal generated by bombarding the sample with the X-ray beam. Monitoring/estimation of the primary X-ray flux at the analysis site may be provided by X-ray flux detectors near and at the analysis site. Both XRF and XPS signals may be normalized to the (estimated) primary X-ray flux to enable film thickness or dose measurement without the need to employ signal intensity ratios.

    摘要翻译： 公开了通过X射线光电子能谱（XPS）表征膜的系统和方法。 例如，用于表征胶片的系统可以包括用于产生具有低于硅的k边缘的能量的X射线束的X射线源。 可以包括样品保持器以将样品定位在X射线束的通路中。 可以包括第一检测器以收集通过用X射线束轰击样品而产生的XPS信号。 可以包括第二检测器，用于收集通过用X射线束轰击样品而产生的X射线荧光（XRF）信号。 在分析现场的X射线通量探测器附近和分析现场可以提供监测/估计分析现场的主要X射线通量。 XRF和XPS信号都可以归一化为（估计的）初级X射线通量，以实现膜厚度或剂量测量，而不需要使用信号强度比。

    Method and system for non-destructive distribution profiling of an element in a film
    4.
    发明授权
    Method and system for non-destructive distribution profiling of an element in a film 有权
    电影中元素的非破坏性分布分布的方法和系统

    公开(公告)号：US08269167B2

    公开(公告)日：2012-09-18

    申请号：US13021435

    申请日：2011-02-04

    申请人： Paola deCecco ,  Bruno Schueler ,  David Reed ,  Michael Kwan ,  David Stephen Ballance

    发明人： Paola deCecco ,  Bruno Schueler ,  David Reed ,  Michael Kwan ,  David Stephen Ballance

    IPC分类号： H01J37/26

    CPC分类号： G01N23/2273 ,  H01J37/26 ,  H01J2237/24585 ,  H03F1/26

    摘要： A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

    摘要翻译： 确定胶片中元素的分布特征的方法。 该方法包括激发沉积在第一膜中的元素的电子能量，获得与电子能量相关联的第一光谱，以及从第一光谱去除背景光谱。 删除背景值会生成已处理的光谱。 该方法还包括将经处理的光谱与具有与第一胶片相当的胶片中元素的已知模拟分布曲线进行匹配。 基于所处理的光谱与从所述一组模拟光谱中选择的模拟光谱的匹配，为第一胶片中的元素获得分布曲线。

    Diamond anode
    5.
    发明授权
    Diamond anode 有权
    金刚石阳极

    公开(公告)号：US07359487B1

    公开(公告)日：2008-04-15

    申请号：US11228685

    申请日：2005-09-15

    申请人： Bruce Newcome

    发明人： Bruce Newcome

    IPC分类号： H01J35/08

    CPC分类号： H01J35/08 ,  H01J2235/081 ,  H01J2235/084 ,  H01J2235/085 ,  H01J2235/088 ,  H01J2235/1204 ,  H01J2235/1241 ,  H01J2235/1262 ,  H01J2235/1291

    摘要： According to one aspect of the invention a robust anode structure and methods of making and using said structure to produce ionizing radiation are disclosed. An ionizing radiation producing layer is bonded to the target side of a highly conductive diamond substrate, by a metal carbide layer. The metal carbide layers improves the strength and durability of the bond, thus improving heat removal from the anode surface and reducing the risk of delaminating the ionizing radiation producing layer, thus reducing degradation and extending the anode's life. A smoothing dopant is alloyed into the radiation producing layer to facilitate keeping the layer surface smooth, thus improving the quality of the x-ray beam emitted from the anode. In an embodiment, the heat sink comprises a metal carbide skeleton cemented diamond material. In another embodiment, the heat sink is bonded to the diamond substrate structure in a high temperature reactive brazing process.

    摘要翻译： 根据本发明的一个方面，公开了一种坚固的阳极结构和制造和使用所述结构以产生电离辐射的方法。 通过金属碳化物层将电离辐射产生层结合到高导电金刚石基底的靶侧。 金属碳化物层提高了粘结的强度和耐久性，从而改善了从阳极表面的散热，并降低了电离辐射产生层分层的风险，从而降低了降解并延长了阳极的使用寿命。 将平滑掺杂剂合金化到辐射产生层中以便于保持层表面光滑，从而提高从阳极发射的X射线束的质量。 在一个实施例中，散热器包括金属碳化物骨架胶结金刚石材料。 在另一个实施例中，散热器在高温反应性钎焊工艺中结合到金刚石基底结构。

    Nondestructive characterization of thin films based on acquired spectrum
    10.
    发明授权
    Nondestructive characterization of thin films based on acquired spectrum 有权
    基于获得光谱的薄膜的非破坏性表征

    公开(公告)号：US06891158B2

    公开(公告)日：2005-05-10

    申请号：US10330317

    申请日：2002-12-27

    申请人： Paul E. Larson ,  David G. Watson

    发明人： Paul E. Larson ,  David G. Watson

    IPC分类号： G01B15/02

    CPC分类号： G01B15/02

    摘要： The present invention provides for characterization of a film (e.g., thickness determination for a silicon oxynitride film) using collected spectral data. For example, an acquired spectrum may be cumulatively integrated and the geometric properties of the integrated spectrum may be used to determine component concentration information. Thickness measurements for the film may be provided based on the component concentration information.

    摘要翻译： 本发明提供使用收集的光谱数据表征膜（例如，氮氧化硅膜的厚度测定）。 例如，获取的频谱可以被累积地整合，并且可以使用积分频谱的几何特性来确定分量浓度信息。 可以基于组分浓度信息提供膜的厚度测量。