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    Sealing glass for semiconductor device, sealing material, sealing material paste, and semiconductor device and its production process
    1.
    发明授权
    Sealing glass for semiconductor device, sealing material, sealing material paste, and semiconductor device and its production process 有权
    半导体器件密封玻璃，密封材料，密封材料浆料和半导体器件及其生产工艺

    公开(公告)号：US08704361B2

    公开(公告)日：2014-04-22

    申请号：US13362690

    申请日：2012-01-31

    申请人： Hiroki Takahashi

    发明人： Hiroki Takahashi

    IPC分类号： H01L23/10 ,  B28B11/00

    CPC分类号： H01L23/291 ,  C03C3/142 ,  C03C3/145 ,  C03C3/15 ,  C03C3/16 ,  C03C3/17 ,  C03C3/19 ,  C03C8/04 ,  C03C8/08 ,  C03C8/10 ,  C03C8/24 ,  H01L23/10 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/16195 ,  Y10T428/1314 ,  H01L2924/00

    摘要： A sealing glass, a sealing material, and a sealing material paste, which suppress metal deposition by reducing glass components (metal oxides) without decreasing the reactivity with and the adhesion to a semiconductor substrate. The sealing glass, contains a low temperature melting glass containing, by mass ratio: from 0.1 to 5% of at least one metal oxide selected from the group consisting of Fe, Mn, Cr, Co, Ni, Nb, Hf, W, Re, a rare earth element, and optionally Mo; and from 5 to 100 ppm by mass ratio of K2O, wherein the low temperature melting glass has a softening point of at most 430° C. The sealing material device, contains the sealing glass and an inorganic filler in an amount of from 0 to 40% by volume ratio. The sealing material paste contains a mixture of the sealing material and a vehicle.

    摘要翻译： 密封玻璃，密封材料和密封材料浆料，其通过减少玻璃成分（金属氧化物）而不降低与半导体基板的反应性和对半导体基板的粘合来抑制金属沉积。 密封玻璃包含低温熔融玻璃，其以质量比计，含有选自Fe，Mn，Cr，Co，Ni，Nb，Hf，W，Re中的至少一种以上的金属氧化物的0.1〜5％ ，稀土元素，以及任选的Mo; 和5〜100质量ppm的K 2 O，其中低温熔融玻璃的软化点至多为430℃。密封材料装置含有0至40的密封玻璃和无机填料 ％体积比。 密封材料浆料包含密封材料和载体的混合物。

    CONDUCTIVE SILVER PASTE FOR A METAL-WRAP-THROUGH SILICON SOLAR CELL
    2.
    发明申请
    CONDUCTIVE SILVER PASTE FOR A METAL-WRAP-THROUGH SILICON SOLAR CELL 审中-公开
    用于金属缠绕硅太阳能电池的导电银浆

    公开(公告)号：US20130186463A1

    公开(公告)日：2013-07-25

    申请号：US13693202

    申请日：2012-12-04

    申请人： E I DU PONT DE NEMOURS AND COMPANY

    发明人： YUELI WANG ,  KENNETH WARREN HANG

    IPC分类号： H01L31/0272 ,  H01L31/0224

    CPC分类号： H01L31/0272 ,  C03C3/07 ,  C03C3/122 ,  C03C3/142 ,  C03C3/21 ,  C03C8/12 ,  C03C8/16 ,  C03C8/18 ,  C03C8/20 ,  H01B1/22 ,  H01L31/022425 ,  H01L31/02245 ,  Y02E10/50

    摘要： A conductive silver via paste comprising particulate conductive silver, a lead-tellurium-lithium-titanium-oxide, titanium resinate and an organic vehicle is particularly useful in providing the metallization of the holes in the silicon wafers of MWT solar cells. The result is a metallic electrically conductive via between the collector lines on the front side and the emitter electrode on the back-side of the solar cell. The paste can also be used to form the collector lines on the front-side of the solar cell and the emitter electrode on the back-side of the solar cell. Also disclosed are metal-wrap-through silicon solar cells comprising the fired conductive silver paste.

    摘要翻译： 包含颗粒状导电银，铅 - 碲 - 锂 - 二氧化钛，树脂钛酸盐和有机载体的导电银通过糊剂特别可用于提供MWT太阳能电池的硅晶片中的孔的金属化。 结果是在前侧的集电极线与太阳能电池背面的发射极之间的金属导电通孔。 该糊料也可用于在太阳能电池的正面和太阳能电池背面上的发射电极上形成集电极线。 还公开了包含烧结的导电银浆的金属包覆硅太阳能电池。

    Magnetic head
    8.
    发明授权
    Magnetic head 失效
    磁头

    公开(公告)号：US5245492A

    公开(公告)日：1993-09-14

    申请号：US863610

    申请日：1992-04-06

    申请人： Yasuo Mizuno ,  Masaki Ikeda ,  Akihiko Yoshida

    发明人： Yasuo Mizuno ,  Masaki Ikeda ,  Akihiko Yoshida

    IPC分类号： C03C3/14 ,  C03C8/24

    CPC分类号： C03C8/24 ,  C03C3/142 ,  C03C8/245

    摘要： A magnetic head comprising magnetic core halves which are sealed with a sealing glass which consists essentially of 1 to 75 wt. % of TeO.sub.2, 1 to 30 wt. % of B.sub.2 O.sub.3, 1 to 75 wt. % of PbO, 1 to 25 wt. % of CdO, 0 to 15 wt. % of ZnO, 0 to 25 wt. % of Bi.sub.2 O.sub.3, 0 to 5 wt. % of A.sub.2 O wherein A is an alkali metal, 0 to 35 wt. % of ARO wherein AR is an alkaline earth metal, 0 to 35 wt. % of La.sub.2 O.sub.3, 0 to 5 wt. % of at least one oxide selected from the group consisting of Al.sub.2 O.sub.3, SiO.sub.2, TiO.sub.2 and ZrO.sub.2, 0 to 10 wt. % of at least one oxide selected from the group consisting of Ta.sub.2 O.sub.5, Nb.sub.2 O.sub.5, WO.sub.3 and MoO.sub.3, 0 to 30 wt. % of PbF.sub.2, and 0 to 2 wt. % of CoO, has a coefficient of thermal expansion of from 82.times.10.sup.-7 /.degree.C. to 137.times.10.sup.-7 /.degree.C. in a temperature range between 30.degree. C. and 300.degree. C., a working temperature of from 430.degree. to 620.degree. C. and water resistance of the first class, which glass is not deeply colored and is not devitrified during the assembly of the magnetic head.

    摘要翻译： 一种磁头，包括用密封玻璃密封的磁芯半部，其基本上由1至75重量％ ％的TeO 2，1〜30wt。 ％的B2O3，1〜75wt。 ％的PbO，1〜25wt。 ％的CdO，0〜15wt。 ％的ZnO，0〜25wt。 ％的Bi 2 O 3，0〜5wt。 ％的A2O，其中A是碱金属，0〜35重量％ ARO的％，其中AR是碱土金属，0-35重量％ ％的La 2 O 3，0〜5wt。 ％的至少一种选自Al 2 O 3，SiO 2，TiO 2和ZrO 2的氧化物，0至10wt。 ％的至少一种选自Ta2O5，Nb2O5，WO3和MoO3的氧化物，0〜30wt。 PbF 2的百分比，和0〜2wt。 ％的CoO在30℃至300℃的温度范围内具有82×10 -7 /℃至137×10 -7 /℃的热膨胀系数，工作温度为430℃至 620℃，第一类的耐水性，该玻璃不会深色，并且在磁头的组装过程中不会失透。