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公开(公告)号：US20240290636A1
公开(公告)日：2024-08-29
申请号：US18693304
申请日：2022-05-17
发明人： Shogo KUNIEDA , Yuta SASAKI , Yosuke HANAWA
IPC分类号： H01L21/67
CPC分类号： H01L21/67034
摘要： The present invention relates to a substrate treating method, a substrate treating apparatus, and a treatment liquid. The substrate treating method includes the treatment liquid supply step, the solidified film forming step, and the sublimation step. In the treatment liquid supply step, the treatment liquid is supplied to a substrate. The treatment liquid contains a sublimable substance and a solvent. In the solidified film forming step, the solvent evaporates from the treatment liquid on the substrate. In the solidified film forming step, a solidified film is formed on the substrate. The solidified film contains the sublimable substance. In the sublimation step, the solidified film sublimates. The substrate is dried by sublimation of the solidified film. The sublimable substance has a vapor pressure at normal temperatures of 0.1 Pa or more and 1.0 Pa or less.
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公开(公告)号：US20200234980A1
公开(公告)日：2020-07-23
申请号：US16639154
申请日：2018-06-19
发明人： Yosuke HANAWA , Yuta SASAKI
摘要： A processing liquid containing a sublimable material is supplied to a front surface of a substrate to which a liquid adheres to form a liquid film. The liquid film is solidified into a solidified body. Nitrogen gas is supplied to the solidified body formed on the front surface of the substrate so that the flow rate thereof per unit area is constant over the entire surface of the substrate. The solidified body is sublimated uniformly over the entire surface of the substrate, and a gas-solid interface of the solidified body moves in a direction perpendicular to the front surface of the substrate. This precludes protrusions of a pattern from being pulled by the movement of the gas-solid interface of the solidified body, whereby the front surface of the substrate is dried well while the collapse of the pattern formed on the front surface of the substrate is prevented.
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公开(公告)号：US20190096704A1
公开(公告)日：2019-03-28
申请号：US16100259
申请日：2018-08-10
发明人： Yuta SASAKI , Yosuke HANAWA
摘要： Disclosed is a substrate treating method of performing drying treatment on a pattern-formed surface of a substrate, the substrate treating method comprising: a supplying step of supplying a substrate treating liquid containing a plastic crystalline material in a molten state to the pattern-formed surface of the substrate; a plastic crystalline layer forming step of bringing, on the pattern-formed surface, the plastic crystalline material into a state of a plastic crystal so as to form a plastic crystalline layer; and a removing step of changing the plastic crystalline material in the state of the plastic crystal into a gas state without an intermediate phase of liquid so as to remove the plastic crystalline material from the pattern-formed surface.
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公开(公告)号：US20160074913A1
公开(公告)日：2016-03-17
申请号：US14742792
申请日：2015-06-18
发明人： Yosuke HANAWA , Katsuhiko MIYA , Yuta SASAKI
IPC分类号： B08B3/10
CPC分类号： H01L21/02057 , B08B3/12 , B08B2203/0288 , C11D11/0047 , C11D11/007 , G03F1/82 , H01L21/67051
摘要： An ultrasonic wave applying liquid is supplied to one principal surface of a substrate while a liquid film of a first liquid being formed on another principal surface of the substrate. The ultrasonic wave applying liquid is obtained by applying ultrasonic waves to a second liquid. Ultrasonic vibration is transmitted to the other principal surface and the liquid film, thereby ultrasonically cleaning the other principal surface. The first liquid has a higher cavitation intensity, which is a stress per unit area acting on the substrate by cavitation caused in the liquid when ultrasonic waves are transmitted to the liquid present on the principal surface of the substrate, than the second liquid.
摘要翻译： 将超声波施加液体供给到基板的一个主面，同时在基板的另一主面上形成第一液体的液膜。 通过向第二液体施加超声波来获得超声波施加液。 超声波振动传递到另一个主表面和液膜，从而超声波清洗另一个主表面。 第一液体具有较高的空化强度，这是当超声波传播到存在于基材主表面上的液体时，其作用在基板上的每单位面积上的应力在液体中引起的应力比第二液体高。
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5.发明公开公开(公告)号：US20240290635A1
公开(公告)日：2024-08-29
申请号：US18437852
申请日：2024-02-09
发明人： Shogo KUNIEDA , Yuta SASAKI , Koki UONAMI , Yosuke HANAWA
CPC分类号： H01L21/67034 , B05C11/10 , B05C13/02
摘要： The present invention relates to a substrate treating method, a substrate treating apparatus, a treatment liquid, and a treatment liquid evaluation method. The substrate treating method includes a treatment liquid supply step, a solidified film forming step, and a sublimation step. In the treatment liquid supply step, the treatment liquid is supplied to a substrate. The treatment liquid contains a sublimable substance and a solvent. In the solidified film forming step, the solvent evaporates from the treatment liquid on the substrate. In the solidified film forming step, a solidified film is formed on the substrate. The solidified film contains the sublimable substance. In the sublimation step, the solidified film sublimates. The substrate is dried by sublimation of the solidified film. Here, the sublimable substance has a maximum positive partial charge of 0.22 or more and less than 0.34.
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公开(公告)号：US20240120212A1
公开(公告)日：2024-04-11
申请号：US18452977
申请日：2023-08-21
发明人： Shogo KUNIEDA , Yuta SASAKI , Yosuke HANAWA
CPC分类号： H01L21/67028 , C11D7/261 , C11D7/28 , C11D7/5018 , C11D11/0023 , H01L21/02057 , B08B3/022
摘要： A substrate treating method according to the present invention is a substrate treating method for treating a pattern-formed surface of a substrate W, the substrate treating method including: a supply process of supplying a substrate treating liquid containing a sublimable substance and a solvent to the pattern-formed surface; a solidification process of evaporating the solvent in a liquid film of the substrate treating liquid supplied to the pattern-formed surface in the supply process, depositing the sublimable substance, and forming a solidified film containing the sublimable substance; and a sublimation process of sublimating the solidified film and removing the solidified film, in which the sublimable substance contains at least one of 2,5-dimethyl-2,5-hexanediol and 3-trifluoromethylbenzoic acid.
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公开(公告)号：US20190333755A1
公开(公告)日：2019-10-31
申请号：US16475146
申请日：2017-11-10
发明人： Yosuke HANAWA , Dai UEDA , Yuta SASAKI
摘要： A substrate treating method and a substrate treating apparatus which can reduce the collapse of a pattern on a substrate. The substrate treating method includes a supply step of supplying a process liquid including a sublimable substance in a molten state to a pattern-formed surface of a substrate; a solidification step of solidifying the process liquid on the pattern-formed surface so as to form a solidified body; a sublimation step of subliming the solidified body so as to remove the solidified body from the pattern-formed surface; and an organic substance removal step of removing, when the solidified body is sublimed, an organic substance precipitated on a sublimation interface, and the organic substance removal step is performed so as to overlap at least part of the sublimation step.
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公开(公告)号：US20170043379A1
公开(公告)日：2017-02-16
申请号：US15222124
申请日：2016-07-28
发明人： Yuta SASAKI , Yosuke HANAWA , Katsuhiko MIYA
CPC分类号： B08B3/12 , B08B3/00 , C11D11/0047 , C11D11/007 , H01L21/67051
摘要： After hydrophobization of surfaces of patterns, a liquid film of pure water or the like is formed on the surfaces of the substrate. At this stage, the liquid of the liquid film cannot be present between the patterns because of hydrophobization, and gas is present there. With the front surface of the substrate covered with the liquid film, a liquid to which ultrasonic waves are applied is supplied to the back surface of the substrate, whereby the back surface of the substrate is cleaned due to the cavitation collapse energy in the liquid caused by the ultrasonic waves. While collapse of cavitation occurs at the front surface of the substrate, the presence of the gas between the patterns prohibits collapse of cavitation between the patterns, the liquid film can prevent contamination while preventing collapse of the patterns, and the back surface of the substrate is cleaned favorably.
摘要翻译： 在图案表面疏水化之后，在基材的表面上形成纯水等的液膜。 在这个阶段，液膜由于疏水化而不能存在于图案之间，气体存在于此处。 在衬底的前表面被液膜覆盖的情况下，向衬底的背面提供施加了超声波的液体，由于液体中的气蚀塌陷能量而清洗衬底的后表面 通过超声波。 虽然在基板的前表面发生气蚀的崩溃，但是图案之间的气体的存在禁止图案之间的气蚀的崩溃，液膜可以防止污染，同时防止图案的塌陷，并且基板的背面是 清洗好。
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公开(公告)号：US20240218302A1
公开(公告)日：2024-07-04
申请号：US18557913
申请日：2022-04-21
发明人： Yuta SASAKI , Yosuke HANAWA , Shogo KUNIEDA
CPC分类号： C11D7/5022 , C11D7/261 , C11D7/32 , H01L21/02057
摘要： A substrate treating method and treatment liquid. A substrate has an upper surface with a pattern forming area and a pattern non-forming area. The method includes a treatment liquid supplying step, a solidified film forming step, a sublimation step, and a removing step. In the treatment liquid supplying step, a treatment liquid film is formed on the upper surface of the substrate. The treatment liquid contains a sublimable substance and a solvent. In the solidified film forming step, a solidified film containing the sublimable substance is formed on the upper surface of the substrate by evaporating the solvent from the liquid film. The solidified film has a first solidified film on the pattern non-forming area and a second solidified film on the pattern non-forming area. In the sublimation step, the first solidified film sublimates. In the removing step, the second solidified film is removed from the substrate.
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公开(公告)号：US20240170297A1
公开(公告)日：2024-05-23
申请号：US18550617
申请日：2022-01-20
发明人： Yosuke HANAWA , Dai UEDA , Akiko HARUMOTO
IPC分类号： H01L21/311 , H01L21/67
CPC分类号： H01L21/31111 , H01L21/6708 , H01L21/67253
摘要： This disclosure relates to a substrate treating method and a substrate treating apparatus. An additive is dissolved in a first treatment liquid. The first treatment liquid contains iodide ions (I−). The substrate treating method includes an adjusting step and a supplying step. In the adjusting step, decrease in iodide ions (I−) contained in the first treatment liquid is suppressed. Accordingly, the first treatment liquid contains a sufficient amount of iodide ions (I−). In the supplying step, the first treatment liquid adjusted in the adjusting step is supplied to a substrate. Moreover, in the supplying step, a first etchant for etching the substrate is supplied to the substrate.
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