利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

4 条记录 (耗时 0.008 秒)

    Leadless glaze composition made with alkaline earth molybdenate
    1.
    发明授权
    Leadless glaze composition made with alkaline earth molybdenate 失效
    用碱土金钼酸盐制成的无铅釉料

    公开(公告)号：US4316963A

    公开(公告)日：1982-02-23

    申请号：US232162

    申请日：1981-02-06

    申请人： Richard O. Hommel ,  David Klimas

    发明人： Richard O. Hommel ,  David Klimas

    IPC分类号： C03C8/02 ,  C03C8/04 ,  C03C3/08 ,  C03C5/06 ,  C03C9/00

    CPC分类号： C03C8/04 ,  C03C8/02

    摘要： A leadless glaze composition having properties that make lead oxide containing glazes so widely used as ceramic glazes. The glazes according to this invention are prepared to analyze more than about 0.53 to about 1.5 weight percent molybdenum trioxide with the source of the molybdenum trioxide either in the frit or as a mill addition being alkaline earth molybdenate, for example, calcium molybdenate (CaMoO.sub.4).

    摘要翻译： 具有使含有釉料的氧化铅如陶瓷釉料广泛使用的性质的无铅釉料组合物。 根据本发明的釉料被制备成分析多于约0.53至约1.5重量％的三氧化钼，三氧化钼的来源在玻璃料中或作为研磨添加剂是碱土金属钼酸盐，例如钼酸钙（CaMoO 4） 。

    Etching method for the manufacture of a semiconductor integrated circuit
    3.
    发明授权
    Etching method for the manufacture of a semiconductor integrated circuit 失效
    用于制造半导体集成电路的蚀刻方法

    公开(公告)号：US4741800A

    公开(公告)日：1988-05-03

    申请号：US823398

    申请日：1986-01-28

    申请人： Shunpei Yamazaki

    发明人： Shunpei Yamazaki

    IPC分类号： C30B33/00 ,  C30B33/12 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  C03C5/06

    CPC分类号： H01J37/32357 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137

    摘要： A dry etching method for use in the manufacture of a semiconductor integrated circuit using an etching apparatus which is provided with an exciting chamber into which a reactive gas is introduced and an etching chamber which communicates with the reactive gas exciting chamber in which a substrate to be etched is placed, wherein the reactive gas is excited by microwave energy and then the excited reactive gas is introduced into the etching chamber where the excited reactive gas is re-excited by light energy, preferably of the wavelength of the range 180-400 nm, where the re-excited reactive gas is passed over the substrate during the etching thereof.

    摘要翻译： 一种用于制造半导体集成电路的干蚀刻方法，该半导体集成电路使用具有引入反应气体的激发室的蚀刻装置和与反应气体激发室连通的蚀刻室， 其中反应气体被微波能量激发，然后将被激发的反应气体引入蚀刻室中，其中被激发的反应气体被光能重新激发，优选波长范围为180-400nm， 其中再激发的反应气体在其蚀刻期间通过衬底。