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32 条记录 (耗时 0.023 秒)

    Metal oxide film formation method and apparatus
    1.
    发明授权
    Metal oxide film formation method and apparatus 有权
    金属氧化膜形成方法和装置

    公开(公告)号：US06756235B1

    公开(公告)日：2004-06-29

    申请号：US09641681

    申请日：2000-08-18

    申请人： Yijun Liu ,  Hiroshi Shinriki ,  Takashi Magara

    发明人： Yijun Liu ,  Hiroshi Shinriki ,  Takashi Magara

    IPC分类号： H01L2100

    CPC分类号： C23C16/45574 ,  C23C16/409 ,  C23C16/4481 ,  C23C16/45512 ,  C23C16/45565

    摘要： In a metal oxide film formation method, a source gas mixture of organic compound gases containing at least three metals, and an oxidation gas are individually prepared. While the substrate is heated, the oxidation gas is supplied to a substrate set in a closed vessel at a predetermined pressure, and then the gas mixture is supplied. A metal oxide film is formed on the substrate. A metal oxide film formation apparatus is also disclosed.

    摘要翻译： 在金属氧化膜形成方法中，分别制备含有至少三种金属的有机化合物气体和氧化气体的源气体混合物。 在加热基板的同时，将氧化气体以规定的压力供给到密闭容器内的基板，然后供给气体混合物。 在基板上形成金属氧化物膜。 还公开了一种金属氧化物膜形成装置。

    Thin film forming method
    2.
    发明授权
    Thin film forming method 失效
    薄膜成型方法

    公开(公告)号：US06485564B1

    公开(公告)日：2002-11-26

    申请号：US09658507

    申请日：2000-11-13

    申请人： Yijun Liu ,  Hiroshi Shinriki ,  Takashi Magara

    发明人： Yijun Liu ,  Hiroshi Shinriki ,  Takashi Magara

    IPC分类号： C30B2300

    CPC分类号： H01L21/31691 ,  C23C16/40 ,  C23C16/409 ,  H01L28/55

    摘要： In a thin film forming method of the invention, an atmosphere for a base as a thin film forming target is set to a high vacuum of, e.g., 0.01 Torr or less, and a gas of an organometallic compound and an oxidizing gas are introduced onto a base surface heated to about 450° C., to form a plurality of crystal nuclei, made of an oxide of a metal constituting the organometallic compound, on the base surface. The atmosphere for the base is then set to a lower vacuum than the first vacuum degree, and the gas of the organometallic compound and the oxidizing gas are subsequently introduced onto the base surface heated to about 45° C., to form a film made of the oxide of the metal there. In the above process, in the first step, the vacuum degree is set to a vacuum degree at which the oxide of the metal is formed by crystal growth on surfaces of different materials at the first temperature, and the plurality of crystal nuclei are formed at a high density so that a crystal grain which is formed by growing a crystal nucleus comes into contact with a crystal grain growing from an adjacent crystal nucleus. In the subsequent step, the temperature for the base is set to less than a temperature at which the oxide of the metal is formed by crystal growth on the surfaces of the different materials.

    摘要翻译： 在本发明的薄膜形成方法中，将作为薄膜形成靶的基材的气氛设定为例如0.01Torr以下的高真空度，将有机金属化合物和氧化气体的气体引入到 基底表面加热至约450℃，以在基面上形成由构成有机金属化合物的金属的氧化物制成的多个晶核。 然后将基底的气氛设定为比第一真空度更低的真空度，随后将有机金属化合物和氧化气体的气体引入加热至约45℃的基底表面上，以形成由 金属的氧化物在那里。 在上述过程中，在第一步骤中，将真空度设定为在第一温度下在不同材料的表面上通过晶体生长形成金属氧化物的真空度，并且多个晶核形成在 高密度，使得通过生长晶核而形成的晶粒与从相邻晶核生长的晶粒接触。 在随后的步骤中，碱的温度设定为小于在不同材料的表面上通过晶体生长形成金属的氧化物的温度。

    Single-substrate-processing CVD apparatus and method
    3.
    发明授权
    Single-substrate-processing CVD apparatus and method 失效
    单基板处理CVD装置及方法

    公开(公告)号：US6126753A

    公开(公告)日：2000-10-03

    申请号：US310132

    申请日：1999-05-12

    申请人： Hiroshi Shinriki ,  Yijun Liu ,  Masahito Sugiura

    发明人： Hiroshi Shinriki ,  Yijun Liu ,  Masahito Sugiura

    IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/00

    CPC分类号： C23C16/45574 ,  C23C16/405 ,  C23C16/409 ,  C23C16/4411 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/4586

    摘要： A single-substrate-processing CVD apparatus is used for forming a BST thin film on a semiconductor wafer while supplying a first process gas containing a mixture of Ba(thd).sub.2 and Sr(thd).sub.2, and a second process gas containing Ti(O-iPr)(thd).sub.2 or Ti(thd).sub.2. Precursors of Ba and Sr have lower activation energies and higher resistivities than precursors of Ti. The first and second process gases are supplied from a shower head which has a group of first spouting holes for spouting the first process gas and a group of second spouting holes for spouting the second process gas. The group of the second spouting holes are designed to have diameters gradually decreasing in radial directions outward from the center of a shower region, such that the second process gas is supplied at a spouting rate gradually decreasing in radial directions outward from the center.

    摘要翻译： 使用单基板处理CVD装置在半导体晶片上形成BST薄膜，同时供给包含Ba（thd）2和Sr（thd）2的混合物的第一工艺气体和含有Ti（ O-iPr）（thd）2或Ti（thd）2。 Ba和Sr的前体比Ti的前体具有更低的活化能和更高的电阻率。 第一和第二工艺气体由具有一组第一喷射孔的喷淋头供应，用于喷射第一处理气体和一组用于喷射第二处理气体的第二喷射孔。 第二喷射孔组被设计成具有从喷淋区域的中心向外径向逐渐减小的直径，使得以从中心向外径向逐渐减小的喷射速率供给第二处理气体。

    Single-substrate-processing CVD method of forming film containing metal element
    4.
    发明授权
    Single-substrate-processing CVD method of forming film containing metal element 失效
    用于形成含金属元素的单基板处理CVD方法

    公开(公告)号：US06428850B1

    公开(公告)日：2002-08-06

    申请号：US09613694

    申请日：2000-07-10

    申请人： Hiroshi Shinriki ,  Yijun Liu ,  Masahito Sugiura

    发明人： Hiroshi Shinriki ,  Yijun Liu ,  Masahito Sugiura

    IPC分类号： C23C1606

    CPC分类号： C23C16/45574 ,  C23C16/405 ,  C23C16/409 ,  C23C16/4411 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/4586

    摘要： A single-substrate-processing CVD apparatus is used for forming a BST thin film on a semiconductor wafer while supplying a first process gas containing a mixture of Ba(thd)2 and Sr(thd)2, and a second process gas containing Ti(O-iPr)(thd)2 or Ti(thd)2. Precursors of Ba and Sr have lower activation energies and higher resistivities than precursors of Ti. The first and second process gases are supplied from a shower head which has a group of first spouting holes for spouting the first process gas and a group of second spouting holes for spouting the second process gas. The group of the second spouting holes are designed to have diameters gradually decreasing in radial directions outward from the center of a shower region, such that the second process gas is supplied at a spouting rate gradually decreasing in radial directions outward from the center.

    摘要翻译： 使用单基板处理CVD装置在半导体晶片上形成BST薄膜，同时供给包含Ba（thd）2和Sr（thd）2的混合物的第一工艺气体和含有Ti（ O-iPr）（thd）2或Ti（thd）2。 Ba和Sr的前体比Ti的前体具有更低的活化能和更高的电阻率。 第一和第二工艺气体由具有一组第一喷射孔的喷淋头供应，用于喷射第一处理气体和一组用于喷射第二处理气体的第二喷射孔。 第二喷射孔组被设计成具有从喷淋区域的中心向外径向逐渐减小的直径，使得以从中心向外径向逐渐减小的喷射速率供给第二处理气体。

    Managing make-up gas composition variation for a high pressure expander process
    5.
    发明授权
    Managing make-up gas composition variation for a high pressure expander process 有权

    公开(公告)号：US11555651B2

    公开(公告)日：2023-01-17

    申请号：US16526441

    申请日：2019-07-30

    申请人： Yijun Liu ,  Fritz Pierre, Jr.

    发明人： Yijun Liu ,  Fritz Pierre, Jr.

    IPC分类号： F25J1/02 ,  F25J1/00

    摘要： A method for liquefying a feed gas stream. A refrigerant stream is cooled and expanded to produce an expanded, cooled refrigerant stream. Part or all of the expanded, cooled refrigerant stream is mixed with a make-up refrigerant stream in a separator, thereby condensing heavy hydrocarbon components from the make-up refrigerant stream and forming a gaseous expanded, cooled refrigerant stream. The gaseous expanded, cooled refrigerant stream passes through a heat exchanger zone to form a warm refrigerant stream. The feed gas stream is passed through the heat exchanger zone to cool at least part of the feed gas stream by indirect heat exchange with the expanded, cooled refrigerant stream, thereby forming a liquefied gas stream. The warm refrigerant stream is compressed to produce the compressed refrigerant stream.

    APPARATUS AND METHOD FOR BAKING GLASS SUBSTRATE
    7.
    发明申请
    APPARATUS AND METHOD FOR BAKING GLASS SUBSTRATE 有权
    烘烤玻璃基材的装置及方法

    公开(公告)号：US20140007620A1

    公开(公告)日：2014-01-09

    申请号：US13641664

    申请日：2012-08-02

    申请人： Tao Ma ,  Tao Ding ,  Ming Liu ,  Tao Song ,  Guodong Zhao ,  Yijun Liu

    发明人： Tao Ma ,  Tao Ding ,  Ming Liu ,  Tao Song ,  Guodong Zhao ,  Yijun Liu

    IPC分类号： C03B32/00

    CPC分类号： C03B32/00 ,  C03C17/001 ,  C03C17/32 ,  C03C2218/31

    摘要： The present invention discloses an apparatus for baking a glass substrate, which includes: a baking oven, a support component, a temperature sensing device, a heating device, a cooling device, and a temperature controlling device. The present invention further discloses a method for baking a glass substrate. The present invention is capable of dynamically controlling the temperature of the support component, which contacts the glass substrate. The temperature of the glass substrate keeps identical and the temperature of the support component keep identical, so as to prevent a Mura defect appearing on the glass substrate.

    摘要翻译： 本发明公开了一种玻璃基板的烘烤装置，其特征在于，包括：烘烤炉，支撑部件，温度检测装置，加热装置，冷却装置以及温度控制装置。 本发明还公开了一种烘烤玻璃基板的方法。 本发明能够动态地控制与玻璃基板接触的支撑部件的温度。 玻璃基板的温度保持相同，并且支撑部件的温度保持相同，从而防止出现在玻璃基板上的Mura缺陷。